JPS6286757A - トランジスタ - Google Patents
トランジスタInfo
- Publication number
- JPS6286757A JPS6286757A JP60227184A JP22718485A JPS6286757A JP S6286757 A JPS6286757 A JP S6286757A JP 60227184 A JP60227184 A JP 60227184A JP 22718485 A JP22718485 A JP 22718485A JP S6286757 A JPS6286757 A JP S6286757A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- emitter
- diode
- resistor
- diode element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60227184A JPS6286757A (ja) | 1985-10-11 | 1985-10-11 | トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60227184A JPS6286757A (ja) | 1985-10-11 | 1985-10-11 | トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6286757A true JPS6286757A (ja) | 1987-04-21 |
JPH055371B2 JPH055371B2 (enrdf_load_stackoverflow) | 1993-01-22 |
Family
ID=16856803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60227184A Granted JPS6286757A (ja) | 1985-10-11 | 1985-10-11 | トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6286757A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0643205A (ja) * | 1992-07-22 | 1994-02-18 | Mitsubishi Electric Corp | コレクタ・エミッタ間電圧モニタ回路 |
US6292011B1 (en) | 1998-07-16 | 2001-09-18 | Nec Corporation | Method for measuring collector and emitter breakdown voltage of bipolar transistor |
-
1985
- 1985-10-11 JP JP60227184A patent/JPS6286757A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0643205A (ja) * | 1992-07-22 | 1994-02-18 | Mitsubishi Electric Corp | コレクタ・エミッタ間電圧モニタ回路 |
US6292011B1 (en) | 1998-07-16 | 2001-09-18 | Nec Corporation | Method for measuring collector and emitter breakdown voltage of bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
JPH055371B2 (enrdf_load_stackoverflow) | 1993-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2850801B2 (ja) | 半導体素子 | |
US4924339A (en) | Input protecting circuit in use with a MOS semiconductor device | |
JP3353388B2 (ja) | 電力用半導体装置 | |
JPH0342503B2 (enrdf_load_stackoverflow) | ||
US4225878A (en) | Integrated circuit on chip trimming | |
JP3239849B2 (ja) | バイポーラトランジスタのコレクタ・エミッタ間耐圧の測定方法 | |
JP3195800B2 (ja) | 半導体素子試験システム及び半導体素子試験方法 | |
US6410398B1 (en) | Device for the adjustment of circuits after packaging, corresponding fabrication process and induction device | |
JPS6286757A (ja) | トランジスタ | |
JPH11220093A (ja) | 半導体集積回路 | |
JP3101364B2 (ja) | 絶縁ゲートバイポーラトランジスタのテストデバイス | |
JP2630138B2 (ja) | 半導体集積回路 | |
JPS5871655A (ja) | 半導体装置 | |
Henderson | Effects of electrostatic discharge on GaAs-based HBTs | |
JPH0590481A (ja) | 半導体集積回路 | |
JPS63211757A (ja) | 半導体装置 | |
JP3067188B2 (ja) | 半導体集積回路 | |
JP3135666B2 (ja) | 半導体集積回路の入力保護回路 | |
JP3101365B2 (ja) | 絶縁ゲートバイポーラトランジスタのテストデバイス | |
JPS5943733Y2 (ja) | 半導体装置 | |
US5138418A (en) | Transistor structure for testing emitter-base junction | |
JPH05283620A (ja) | 半導体装置及び半導体装置の試験方法 | |
JPH0357314A (ja) | 半導体装置 | |
JP3456292B2 (ja) | 半導体集積回路 | |
JPH0468705A (ja) | 半導体集積回路装置 |