JPS628513B2 - - Google Patents
Info
- Publication number
- JPS628513B2 JPS628513B2 JP960080A JP960080A JPS628513B2 JP S628513 B2 JPS628513 B2 JP S628513B2 JP 960080 A JP960080 A JP 960080A JP 960080 A JP960080 A JP 960080A JP S628513 B2 JPS628513 B2 JP S628513B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- exposed
- negative resist
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZRNSSRODJSSVEJ-UHFFFAOYSA-N 2-methylpentacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(C)C ZRNSSRODJSSVEJ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Natural products FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は、酸化シリコン膜を選択的に除去し、
所定形状にパターニングする方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention selectively removes a silicon oxide film,
The present invention relates to a method of patterning into a predetermined shape.
従来半導体装置の製造方法等において、基板上
の酸化シリコン膜を選択的に除去し、所定の微細
パターン形状にパターニングするには酸化シリコ
ン膜上にネガ型又はポジ型の感光性樹脂（フオ
ト・レジスト）を塗布し、この上に所定パターン
を有するフオト・マスクなどをのせ、紫外線など
を照射し、現像液で現像することにより、該感光
性樹脂を選択的に除去し、該感光性樹脂をマスク
として該酸化シリコン膜を通常の湿式又は乾式エ
ツチング法により選択的に除去している。このよ
うな方法では感光性樹脂を現像する工程が必要で
あり、特に半導体基板上の酸化シリコン膜をパタ
ーニングする際には該現像液により半導体基板が
汚染する問題がある。また感光性樹脂としてネガ
型レジストを使用する場合、ネガ型レジストは、
一般に現像液に浸漬することにより膨潤する傾向
があるため、１μ程度の微細パターンの形式を精
度良く行なうことが、困難である問題がある。 In conventional semiconductor device manufacturing methods, a negative or positive photosensitive resin (photoresist) is used on the silicon oxide film to selectively remove the silicon oxide film on the substrate and pattern it into a predetermined fine pattern shape. ), place a photo mask or the like with a predetermined pattern on it, irradiate it with ultraviolet rays, and develop it with a developer to selectively remove the photosensitive resin and mask the photosensitive resin. Then, the silicon oxide film is selectively removed by a conventional wet or dry etching method. Such a method requires a step of developing the photosensitive resin, and there is a problem in that the semiconductor substrate is contaminated by the developer, especially when patterning a silicon oxide film on a semiconductor substrate. In addition, when using a negative resist as a photosensitive resin, the negative resist is
Generally, there is a problem that it is difficult to accurately form a fine pattern of about 1 μm because it tends to swell when immersed in a developer.
本発明は上記問題点を解決する酸化シリコン膜
の選択蝕刻法を提案するもので、基板上に形成さ
れた酸化シリコン膜上にネガレジストを塗布し、
選択的に紫外線露光し、次いで、該基板全表面を
フツ素系ガスプラズマ雰囲気中に所定時間露呈し
た後、該ネガレジストを剥離することにより、非
露光部に対応する該酸化シリコン膜を選択的に除
去することを特徴とする。 The present invention proposes a selective etching method for a silicon oxide film that solves the above problems, in which a negative resist is applied to a silicon oxide film formed on a substrate,
After selectively exposing the substrate to ultraviolet light and then exposing the entire surface of the substrate to a fluorine-based gas plasma atmosphere for a predetermined time, the negative resist is peeled off to selectively remove the silicon oxide film corresponding to the non-exposed areas. It is characterized by being removed.
本発明は、基板上に形成された酸化シリコン膜
上にネガ型レジストを塗布し、選択的に紫外線を
露光した後、ネガ型レジストを現像液に浸漬する
ことなく、全面に該レジストが塗布された状態
で、フツ素系ガス雰囲気中に露呈すると、紫外線
露光部と紫外線非露光部とでは、該レジスト下の
該酸化シリコン膜が除去される速度が異なる現象
を発見したことに基づくものである。 In the present invention, a negative resist is applied onto a silicon oxide film formed on a substrate, selectively exposed to ultraviolet rays, and then the resist is applied to the entire surface without immersing the negative resist in a developer. This is based on the discovery that when the resist is exposed to a fluorine-based gas atmosphere, the rate at which the silicon oxide film under the resist is removed differs between the UV-exposed area and the UV-unexposed area. .
次に実施例に基づき、本発明を詳細に説明す
る。 Next, the present invention will be explained in detail based on Examples.
半導体基板上の多結晶シリコン層をパターニン
グし、配線パターンを形成する際、該多結晶シリ
コン層上に酸化シリコン膜を形成し、該酸化シリ
コン膜を所定のパターンに形成し、該パターニン
グされた酸化シリコン膜をマスクとして、多結晶
シリコン層を選択的に除去し、パターニングする
工程を一例として説明する。 When patterning a polycrystalline silicon layer on a semiconductor substrate to form a wiring pattern, a silicon oxide film is formed on the polycrystalline silicon layer, the silicon oxide film is formed in a predetermined pattern, and the patterned oxide A process of selectively removing and patterning a polycrystalline silicon layer using a silicon film as a mask will be described as an example.
（第１図参照）
シリコン半導体基板１上に厚さ3000乃至5000Å
程度の多結晶シリコン層２を化学気相成長法等に
より形成し、次いで、熱酸化法等により該多結晶
シリコン層２上に厚さ400Å程度の酸化シリコン
膜３を形成する。(See Figure 1) A film with a thickness of 3000 to 5000 Å is formed on the silicon semiconductor substrate 1.
A polycrystalline silicon layer 2 of approximately 400 Å in thickness is formed by chemical vapor deposition or the like, and then a silicon oxide film 3 of approximately 400 Å in thickness is formed on the polycrystalline silicon layer 2 by thermal oxidation or the like.
（第２図参照）
次に該酸化シリコン膜３上にネガ型レジスト４
例えばOMR（東京応化製）を厚さ8000乃至9000
Åに塗布し、所定のパターン５を有するフオト・
マスク６を介して選択的に紫外線露光し、該レジ
スト膜４を選択的に化学変化させる。露光時間及
び露光強度は、レジスト膜４厚によるが紫外線露
光により、レジスト膜に化学変化を生ずるのに充
分な程度に選択する。(See Figure 2) Next, a negative resist 4 is applied on the silicon oxide film 3.
For example, use OMR (manufactured by Tokyo Ohka) with a thickness of 8000 to 9000.
A photo coated with a predetermined pattern 5.
The resist film 4 is selectively exposed to ultraviolet light through a mask 6 to undergo a selective chemical change. The exposure time and exposure intensity depend on the thickness of the resist film 4, but are selected to be sufficient to cause a chemical change in the resist film by exposure to ultraviolet light.
（第３図参照）
次にネガ型レジスト４が、該酸化シリコン膜上
に全面塗布された状態で、フツ化水素ガス雰囲気
中に所定時間露呈する。一例としてトリフロロメ
タン（CHF3）ガスを用い、流量40〔c.c.／分〕圧
力0.2〔torr〕、出力1250〔Ｗ〕で約40分間イオン
照射を行なう。このとき、非電光部領域に対応す
るネガレジスト下の酸化シリコン膜は、１分間に
約10Å程度の速さで消失するのに対し、露光部領
域に対応するネガレジスト下の酸化シリコン膜
は、１分間に約４Å程度の速さで消失していく。
従つて、約40分間の上記イオン照射を行なえば非
露光部領域に対応するネガレジスト下の該酸化シ
リコン膜は完全に消失するのに対し、露光部領域
に対応する該酸化シリコン膜は残存している。フ
ツ素系ガスとしてトリフロロメタン（CHF3）の
他、フツ化メチル（CH3F）等、フツ素系ガスが
適する。(See FIG. 3) Next, the negative resist 4 is exposed to a hydrogen fluoride gas atmosphere for a predetermined period of time in a state where the entire surface of the silicon oxide film is coated. As an example, using trifluoromethane (CHF 3 ) gas, ion irradiation is performed for about 40 minutes at a flow rate of 40 [cc/min], a pressure of 0.2 [torr], and an output of 1250 [W]. At this time, the silicon oxide film under the negative resist corresponding to the non-lightning area disappears at a rate of about 10 Å per minute, whereas the silicon oxide film under the negative resist corresponding to the exposed area disappears at a rate of about 10 Å per minute. It disappears at a rate of about 4 Å per minute.
Therefore, if the above ion irradiation is performed for about 40 minutes, the silicon oxide film under the negative resist corresponding to the non-exposed areas will completely disappear, whereas the silicon oxide film corresponding to the exposed areas will remain. ing. In addition to trifluoromethane (CHF 3 ), fluorine-based gases such as methyl fluoride (CH 3 F) are suitable as the fluorine-based gas.
次いで、通常の酸素プラズマ照射灰化処理によ
り該ネガ型レジストを剥離すると、非露光部に対
応する酸化シリコン膜が選択的に除去され、所定
パターンに形成された酸化シリコン膜３′が得ら
れる。 Next, when the negative resist is peeled off by ordinary oxygen plasma irradiation and ashing treatment, the silicon oxide film corresponding to the non-exposed portions is selectively removed, and a silicon oxide film 3' formed in a predetermined pattern is obtained.
このようにして、所定パターンに形成された該
酸化シリコン膜３′をマスクとして、該酸化シリ
コン膜３′下の該多結晶シリコン層２を通常の湿
式又は乾式エツチング法により、選択的にエツチ
ング除去する。 In this way, using the silicon oxide film 3' formed in a predetermined pattern as a mask, the polycrystalline silicon layer 2 under the silicon oxide film 3' is selectively etched away by a normal wet or dry etching method. do.
以上説明したように、本発明によれば、レジス
ト膜を現像液に浸漬して現像する工程がないた
め、レジストパターンの膨潤や現像液による汚染
を生ずることがないため精度良く微細パターンを
形成することができ、又、歩留りが向上する利点
がある。 As explained above, according to the present invention, since there is no step of immersing the resist film in a developer to develop it, swelling of the resist pattern or contamination by the developer does not occur, so a fine pattern can be formed with high precision. It also has the advantage of improving yield.
第１図乃至第４図は本発明による一部工程図を
示す。
１……シリコン基板、２……多結晶シリコン
層、３……酸化シリコン膜、４……レジスト層。
1 to 4 show partial process diagrams according to the present invention. 1...Silicon substrate, 2...Polycrystalline silicon layer, 3...Silicon oxide film, 4...Resist layer.
Claims (1)
レジストを塗布し、選択的に紫外線露光し、次い
で該基板全表面をフツ素系ガスプラズマ雰囲気中
に所定時間露呈した後、該ネガレジストを剥離す
ることにより、非露光部に対応する該酸化シリコ
ン膜を選択的に除去することを特徴とする酸化シ
リコン膜の選択蝕刻法。1. A negative resist is applied onto the silicon oxide film formed on the substrate, selectively exposed to ultraviolet light, and then the entire surface of the substrate is exposed to a fluorine-based gas plasma atmosphere for a predetermined period of time, and then the negative resist is peeled off. A selective etching method for a silicon oxide film, characterized in that the silicon oxide film corresponding to the non-exposed portions is selectively removed by etching the silicon oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP960080A JPS56108880A (en) | 1980-01-30 | 1980-01-30 | Selectively etching method for silicon oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP960080A JPS56108880A (en) | 1980-01-30 | 1980-01-30 | Selectively etching method for silicon oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56108880A JPS56108880A (en) | 1981-08-28 |
| JPS628513B2 true JPS628513B2 (en) | 1987-02-23 |
Family
ID=11724801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP960080A Granted JPS56108880A (en) | 1980-01-30 | 1980-01-30 | Selectively etching method for silicon oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56108880A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0718012B2 (en) * | 1985-11-13 | 1995-03-01 | 日本電気株式会社 | Surface selection treatment method |
-
1980
- 1980-01-30 JP JP960080A patent/JPS56108880A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56108880A (en) | 1981-08-28 |
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