KR950004977B1 - Method of forming photo resist minute pattern on semiconductor device - Google Patents

Method of forming photo resist minute pattern on semiconductor device Download PDF

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KR950004977B1
KR950004977B1 KR92019904A KR920019904A KR950004977B1 KR 950004977 B1 KR950004977 B1 KR 950004977B1 KR 92019904 A KR92019904 A KR 92019904A KR 920019904 A KR920019904 A KR 920019904A KR 950004977 B1 KR950004977 B1 KR 950004977B1
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film
pattern
photosensitive film
forming
photosensitive
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KR92019904A
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Korean (ko)
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KR940009769A (en
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김명선
권성구
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김주용
현대전자산업주식회사
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Abstract

The method includes the steps of applying an etching material (3) on a silicon substrate (1), thickly applying a first photosenstive film (11) not including a PAC (photo-active-compound) thereon, thinly applying a second photosenstive film (12) including a PAC on the film (11) to expose and develop the film (12) to remove the exposed portion of the film (12) to form a second photosensitive film pattern (12A), exposing the pattern (12A) to form a silicon implantation layer (14) into the upper pattern (12A) by a silyration reaction, converting the layer (14) into an oxide film (15) by an O2 plasma treatment, and using the oxide film (15) as mask to etch the exposed film (11) to form micropatterns (11A,12A) thereby not forming a bird's beak shaped silicon implantation layer to control the line width of micropattern easely.

Description

반도체 소자의 감광막 미세 패턴 형성방법 Method for fine pattern of the semiconductor elements forming photosensitive film

제1a도 내지 제1d도는 종래 방법에 의해 미세 패턴을 형성하는 단계를 도시한 단며도로서, As the Fig. 1a) to (1d also turn danmyeo showing the steps of forming a fine pattern by a conventional method,

제1a도는 실린콘 기판위에 에칭할 물질을 도포한 후, 실리레이션용 감광막을 도포한 단면도. No. 1a turning after applying the material to be etched on the substrate syringe cone, a sectional view of applying a photosensitive film for silica illustration.

제1b도는 감광막 상부에 마스크 패턴을 노광시킨 단면도. 1b the cross-section turning exposing a mask pattern on a photosensitive film thereon.

제1c도는 실리레이션 반응후의 단면도. 1c a sectional view after the turning silica migration reaction.

제1d도는 산소플라즈마로 건식 식각하여 미세패턴을 형성한 단면도. No. 1d to turn a cross-sectional view forming a fine pattern by dry etching with an oxygen plasma.

제2a도 내지 제2d도는 본 발명에 의해 미세 팬턴을 형성하는 단계를 도시한 단면도로서, The cross-sectional views showing the steps of forming a fine pontoon according to the present invention Fig. 2a) to (2d turning,

제2a도는 실리콘 기판위에 에칭할 물질을 도포한 후, 2층의 감광막을 도포한 단면도. The turn 2a after applying the material to be etched on the silicon substrate, cross-sectional view of applying a photosensitive film on the second floor.

제2b도는 제2a도에 전면노광을 실시한 단면도. 2b the cross-sectional front turn subjected to exposure to the Fig. 2a.

제2c도는 실리레이션 반응 후의 단면도. 2c the cross section after the turning silica migration reaction.

제2d도는 산소플라즈마로 건식식각하여 미세 패턴을 형성한 단면도. 2d the turning cross-sectional view of forming a fine pattern by dry etching with an oxygen plasma.

* 도면의 주요부분에 대한 부호의 설명 * Description of the Related Art

1 : 실리콘 기판 2 : 필드 산화막 1: Silicon substrate 2: a field oxide film

3 : 에칭할 물질 4 : 감광막 3: etching material 4: Photoresist

4A : 감광막 패턴 5, 13 : 노광지역 4A: photoresist pattern 5, 13: the exposure area

5A,14 : 실리콘 주입층 6 : 자외선 5A, 14: silicon implanted layer 6: UV

7 : 마스크 패턴 8,15 : 산화막 7: mask pattern 8,15: oxide film

9,16 : 미세패턴 10 : 새부리 모양 9,16: fine pattern 10: saeburi shape

11 : 1차 감광막 11A : 감광막 패턴 11:01 Tea photoresist 11A: photoresist pattern

12A : 2차 감광막 패턴 12A: 2 car photoresist pattern

본 발명은 반도체 소자의 미세 패턴 형성에 관한 것으로서, 감광화합물(PAC : Photo-Active-Compound)이 첨가되지 않은 않은 감광막 하층으로 사용하고, 그 상부에 감광화합물이 첨가된 감광막을 도포하여 다층 감광막 패턴을 형성하는 리소그라피 공정 기술이다. The present invention relates to a fine pattern formation of semiconductor elements, the photosensitive compound (PAC: Photo-Active-Compound) did not added, and used as a photoresist lower layer, by coating a photosensitive film of a photosensitive compound added to the upper multi-layer photosensitive film pattern a lithography process, a technique of forming a.

종래 기술로 감광막 패턴을 형성하는 단계를 제1a도 내지 제1d에서 설명하면 제1a도는 실리콘 기판(1)상에 필드 산화막(2)을 형성한 후, 그 상부에 에칭할 물질(3)을 증착하고, 감광화합물을 포함하는 실리레이션용 감광막(4)을 도포한 단면도이다. Turning to the steps of forming a photosensitive film pattern as a prior art in Fig.) To (1d claim 1a after forming the first 1a of silicon substrate 1, a field oxide film (2) on turning, depositing the material 3 to be etched on its upper and a cross-sectional view application of the photosensitive film 4, for illustration silica containing a photosensitive compound.

제1b는 제1a도에서 도포된 감광막(4)에 마스크 패턴(7)을 사용하여 자외선(6)을 노광시키는 것을 나타낸 단면도이다. The 1b is a cross-sectional view of the exposure to ultraviolet light (6) by using the mask pattern 7 is applied to the photosensitive film 4 in the Figure 1a.

제1c는 실리레이션 반응을 실시하여 노광지역(5)에 실리콘 주입층(5A)을 형성한 단면도로서, 노광시킬 때 빛의 회절 현상에 의해 마스크 패턴(7) 경계 부분도 노광되어, 실리레이션 반응시 실리콘이 주입됨으로써 새부리 모양(Bird's Beak)(10)의 실리콘 주입층(5A)이 형성된다. Claim 1c is a cross-sectional form a silicon implanted layer (5A) on the exposed region (5) subjected to silica migration reaction, when the exposure is the exposure mask pattern 7 by the diffraction phenomenon of the light boundary portion, silica migration reaction a silicon implanted layer (5A) of saeburi shape (Bird's Beak) (10) is formed by the silicon during the injection.

제1d도는 제1c도의 상태에서 산소플라즈마 처리를 실시하여 실리콘 주입층(5A)의 표면에 산화막(8)을 형성시켜, 산소플라즈마에 대한 마스크 역할을 하게 하고, 실리콘이 주입되지 않은 감광막(4)을 건식식각하여 감광막 패턴(4A)을 형성한다. No. 1d to by turn subjected to oxygen plasma treatment in a state in claim 1c degrees to form an oxide film 8 to the surface of the silicon implanted layer (5A), the photoresist (4) to act as a mask, and the non-silicon is injected to the oxygen plasma to form a photosensitive pattern (4A) by dry etching. 그로 인하여 산화막(8), 실리콘 주입층(5A) 및 감광막 패턴(4A)으로 이루어진 미세 패턴(9)을 형성한 단면도이다. And thereby a cross-sectional view of forming a fine pattern (9) consisting of oxide film 8, a silicon implanted layer (5A) and the photosensitive film pattern (4A).

상기의 공정으로 미세 패턴을 형성하게 되면 제1c도에서 생긴 새부리 모양의 실리콘 주입층으로 인하여 미세 패턴의 선폭을 조절하기가 힘들어진다. When forming a fine pattern by the above-described process due to the Figure 1c silicon implanted layer of the shape generated by the saeburi is hard to control the line width of a fine pattern.

따라서, 본 발명에서는 새부리 모양의 실리콘 주입층이 형성되지 않도록 다층 감광막을 형성하여 원하는 미세 패턴을 만드는데 그 목적이 있다. Therefore, in the present invention, to prevent the injection layer of silicon saeburi shape is formed to form a multi-layer photosensitive film to create the desired fine pattern it is an object.

본 발명의 미세 패턴 형성단계를 제2a도 내지 제2d도를 참조하여 설명하기로 한다. No. 2a for fine pattern formation step of the present invention to refer to the Fig. 2d will be described.

제2a도는 기판(1) 상에 필드 산화막(2)을 형성한 후, 그 상부에 에칭할 물질(3)을 도포하고 감광화합물을 포함하지 않는 1차 감광막(11)을 두껍게 도포하여 평탄화시킨 다음, 그 상부에 감광화합물을 포함하는 실리레이션용 2차 감광막을 얇게 도포하고, 마스크 패턴을 사용하여 노광 및 현상공정으로 노광된 부분의 2차 감광막을 제거한 2차 감광막 패턴(12A)을 형성한 단면도로서, 1차 감광막(11)은 감광화합물이 없으므로 노광 공정에서 전혀 반응하지 않는다. The 2a and then on turning the substrate (1) forming a field oxide film (2), was applied the material 3 to be etched on its top and a thick coating to planarize the first photoresist layer 11 does not include a photosensitive compound, and then , its top cross section coated with a thin silica illustration second photosensitive film comprising a photosensitive compound to form a second photosensitive film pattern (12A) removing the second photosensitive layer of the exposed by exposure and development process portion by using a mask pattern on a a primary photoresist layer 11 is not at all because there is no reaction at the exposure process, the photosensitive compound.

제2b도는 제2a도에서 전면 노광을 실시하여 2차 감광막 패턴(12A)의 상부표면에 노광지역(13)을 형성한 단면도이다. 2b to the exemplary turning the front exposed in the Figure 2a is a cross-sectional view the formation of the exposure area 13 on the top surface of the second photosensitive film pattern (12A).

제2c도는 실리레이션 반응으로 2차 감광막 패턴(12A)의 노광지역(13)에 실리콘 주입층(14)을 형성한 단면도이다. 2c is a cross-sectional view of the turns forming the exposed area of ​​silicon implanted layer 14 to 13 of the secondary reaction silica illustration photosensitive film pattern (12A). 이때, 감광화합물을 포함하지 않는 1차 감광막(11) 부분은 자외선에 의해 반응하지 않으므로 실리레이션 반응을 시키더라도 실리콘 주입층이 형성되지 않으며, 또한, 2차 감광막 패턴(12A)에서 새부리 모양을 갖는 실리콘 주입층(14)도 형성되지 않는다. At this time, the first photosensitive film (11) portion that does not include a photosensitive compound does not react by UV light even when the silica migration reaction does not form a silicon implanted layer, having a saeburi shape in the second photosensitive film pattern (12A) silicone injection layer 14 is also not formed.

제2d도는 제2c도에 산소플라즈마 처리를 실시하여 실리콘 주입층(14)이 존재하는 부분은 산화막(15)이 형성되고, 산화막(15)이 마스크로 작용함으로써, 노출된 1차 감광막(11)부분이 전식식각되어 1차 감광막 패턴(11A)을 형성하게 된다. The 2d turn subjected to oxygen plasma treatment to claim 2c even if there is a silicon implanted layer 14, part of the oxide film 15 is formed by an oxide film 15 acts as a mask, the exposed first photoresist layer 11 that the illumination part is etched to form a first photosensitive film pattern (11A). 그로 인하여 산화막(15), 1차 및 2차 감광막 패턴(11A 및 12A)으로 이루어진 미세 패턴(16)을 형성한 단면도이다. And thereby a cross-sectional view of forming a fine pattern 16 made of the oxide film 15, the first and second photosensitive film pattern (11A and 12A).

본 발명에 의해 미세 패턴을 형성할 경우는 새부리 모양의 실리콘 주입층이 생성되지 않으므로 미세 패턴의 선폭 조절이 용이하고, 이에 따라, 선폭이 1㎛이하인 패턴을 형성할 수 있다. When forming a fine pattern by the present invention it is accordingly not produce a silicon implanted layer of saeburi shape is easy to adjust the line width of a fine pattern, and the line width can be formed in a pattern 1㎛ or less.

Claims (1)

  1. 반도체 소자의 미세 패턴 형성에 있어서, 실리콘 기판에 에칭할 물질을 도포하고, 감광화합물이 포함되어 있지 않은 1차 감광막을 두껍게 도포하는 단계와, 1차 감광막의 상부에 감광화합물이 포함된 실리레이션용 2차 감광막을 얇게 도포하고, 노광 및 현상공정으로 노광된 부분의 2차 감광막을 제거하여, 2차 감광막 패턴을 형성하는 단계와, 2차 감광막 패턴을 노광시킨 다음, 실리레이션 반응으로 2차 감광막패턴의 상부 표면에 실리콘 주입층을 형성하는 단계와, 산소플라즈마로 실리콘 주입층을 산화막으로 형성하여 마스크로 이용하고, 노출된 1차 감광막을 식각하여, 산화막, 1차 및 2차 감광막으로 이루어진 미세 패턴을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 감광막 미세 패턴 형성방법. In the fine pattern formation of semiconductor elements, for applying a material to be etched in the silicon substrate, and silica with a step of the photosensitive compound is a thicker coating to not include the first photoresist layer, containing the photosensitive compound in an upper portion of the first photosensitive film illustration secondary to a thin coating of photoresist, and removing the second photosensitive film of the exposed portion in the exposure and development process, a second in which the step of forming a photosensitive film pattern, exposing a second photosensitive film pattern, and then, the second photosensitive film by silica migration reaction and forming a silicon implanted layer on the top surface of the pattern, to form a silicon implanted layer with an oxygen plasma to the oxide film used as a mask, etching the exposed first photoresist layer, an oxide film, the fine consisting of first and second photosensitive film photoresist for fine pattern formation method of a semiconductor device which comprises a step of forming a pattern.
KR92019904A 1992-10-28 1992-10-28 Method of forming photo resist minute pattern on semiconductor device KR950004977B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7362322B2 (en) 1997-03-12 2008-04-22 Seiko Epson Corporation Pixel circuit, display apparatus and electronic apparatus equipped with current driving type light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7362322B2 (en) 1997-03-12 2008-04-22 Seiko Epson Corporation Pixel circuit, display apparatus and electronic apparatus equipped with current driving type light-emitting device

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