JPS6280281A - Photolithoetching method - Google Patents
Photolithoetching methodInfo
- Publication number
- JPS6280281A JPS6280281A JP22118885A JP22118885A JPS6280281A JP S6280281 A JPS6280281 A JP S6280281A JP 22118885 A JP22118885 A JP 22118885A JP 22118885 A JP22118885 A JP 22118885A JP S6280281 A JPS6280281 A JP S6280281A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- film
- curved surface
- desired pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electronic Switches (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は曲面型サーマルヘッド等の曲面を有する基板に
対してもフォトリソエツチングが行なえるようにしたフ
ォトリソエツチング加工法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photolithographic etching processing method that allows photolithographic etching to be performed even on a substrate having a curved surface such as a curved thermal head.
従来のフォトエツチング加工法として、例えば、平面に
加工された絶縁基板上に電極を形成するための金属膜を
加工するに際しては、電極を蒸着あるいはスパッタ法に
よって基板上に形成ののち、フォトリソエツチング技術
によってパターンを形成する方法が取られている。この
場合の加工精度は、エツチング時のマスクと基板の平滑
度を向上させることにより上げることができる。As a conventional photoetching method, for example, when processing a metal film for forming electrodes on a flat insulating substrate, the electrodes are formed on the substrate by vapor deposition or sputtering, and then photolithography is performed. A method is used to form a pattern using Processing accuracy in this case can be increased by improving the smoothness of the mask and substrate during etching.
しかし、従来のフォトエツチング加工法にあっては、第
３図のように曲面を有する基板１ｏに適用しようとする
場合、平面のマスク１１を使用すると、基板の曲面部が
マスクより離れるため、該曲面部では精度の良いパター
ンを形成できない不具合がある。However, when applying the conventional photoetching method to a substrate 1o having a curved surface as shown in FIG. There is a problem that a pattern with high precision cannot be formed on a curved surface part.
このような不具合を解決するものとして、特公昭５９−
２３０７７０号りこ示されるようにフレキシブルマスク
を用いる技術が提案されている。しかし、フレキシブル
マスクを固定することが難しく、加工精度を高めること
は容易でない。As a solution to these problems, the
As shown in No. 230770, a technique using a flexible mask has been proposed. However, it is difficult to fix the flexible mask, and it is not easy to improve processing accuracy.
〔問題点を解決ための手段および作用〕本発明は上記事
情に鑑みてなされたものであり、曲面を有する基板上へ
の導体膜形成を精度良く行なえるようにするため、被エ
ツチング物に貼着する前にフォトレジストに所望のパタ
ーンを露光させておくようにしたフォトリソエツチング
加工法を堤供するものである。[Means and effects for solving the problem] The present invention has been made in view of the above circumstances, and in order to form a conductive film on a substrate having a curved surface with high precision, it is possible to form a conductive film on a substrate having a curved surface with high precision. The present invention provides a photolithography process in which a desired pattern is exposed on a photoresist prior to deposition.
以下、本発明によるフォトリソエツチング加工法を詳細
に説明する。Hereinafter, the photolithography processing method according to the present invention will be explained in detail.
第１図（ａ）〜（ｆｌは本発明のフォトリソエツチング
加工法を示し、まず、図（ａ）の如くにマスクアライナ
−の平滑なステージ１にドライフィルムレジスト２を載
せ（或いはドライフィルムレジスト２を平滑な薄い支持
板に貼着し、これをステージ１に載せ）る。ついで、図
（ｂ）のようにドライフィルム２とホトマスク３をアラ
イメントし、光ｒＡ４によって露光し、ドライフィルム
レジスト２とホトマスク３の間にレジスト５を形成する
。更に、図（ｃ）のようにホトマスク３によるドライフ
ィルムを剥がす（このとき、（ａ）の工程において支持
板を用いた場合には、支持板も剥がす）。つぎに、図（
ｄｌのようにレジスト５面を基板１０に予め形成されて
いる導体薄膜６の表面に貼着したのち、ドライフィルム
レジスト２を剥離する。この工程の後、図（８１以上の
フォトリソエツチング加工法を適用してサーマルヘッド
を作成した実施例を第２図に基づいて説明する。FIGS. 1(a) to (fl) show the photolithography processing method of the present invention. First, as shown in FIG. 1(a), a dry film resist 2 is placed on a smooth stage 1 of a mask aligner (or a dry film resist 2 is is attached to a smooth thin support plate and placed on stage 1).Next, as shown in Figure (b), the dry film 2 and photomask 3 are aligned and exposed to light rA4, and the dry film resist 2 and photomask 3 are aligned. A resist 5 is formed between the photomasks 3. Furthermore, as shown in Figure (c), the dry film formed by the photomask 3 is peeled off (at this time, if a support plate is used in the step (a), the support plate is also peeled off). ). Next, figure (
After attaching the resist 5 surface to the surface of the conductor thin film 6 previously formed on the substrate 10 as shown in dl, the dry film resist 2 is peeled off. After this process, an embodiment in which a thermal head was created by applying the photolithography process shown in Figure 81 or above will be described based on FIG. 2.
まず、グレートセラミック基板２０の曲面部にＴａ２Ｎ
抵抗体２１をスパッタしく第２図（ａ））、このスパッ
タ面に記述したドライフィルムレジスト２２を熱ローラ
によって１５μｍ厚に圧着する（第２図（ｂｌ及び（Ｃ
））。ついで、シャワー現象を行なったのちベータし、
ＣＦ４＋０２ガスを用いたドライエツチング法によって
ＴａｚＮをエツチングして抵抗体２３を形成する（第２
図（ｄｌ及び（ｆ））。更に、抵抗体２３に接続される
電極２４を基板２０の両面に形成するために、ＮｉＣｒ
−Ａｕ導体を蒸着してレジスト膜を形成し、Ｋｌ＋Ｉ
２＋Ｈ２０のエツチング液によってＡｕをエツチングす
るとともに、ｆ（ｃＨＨｚＯのエツチング液によりＮｉ
−Ｃｒをエツチングして導体パターンを形成する（第２
図（ｆ））。ツいで、Ｓｉｎ、 −ＴａｚＯｓの保護膜
２５を抵抗体２３の表面に着膜することにより、サーマ
ルヘッドが完成する。First, Ta2N is applied to the curved surface of the great ceramic substrate 20.
The resistor 21 is sputtered (FIG. 2(a)), and the dry film resist 22 described on the sputtered surface is pressed to a thickness of 15 μm using a hot roller (FIG. 2(bl and (C)).
)). Next, after performing the shower phenomenon, beta,
TazN is etched by a dry etching method using CF4+02 gas to form the resistor 23 (second
Figures (dl and (f)). Furthermore, in order to form electrodes 24 connected to the resistor 23 on both sides of the substrate 20, NiCr
-Au conductor is evaporated to form a resist film, Kl+I
Au is etched with an etching solution of 2+H20, and Ni is etched with an etching solution of f(cHzO).
- Etching Cr to form a conductor pattern (second
Figure (f)). Then, a protective film 25 of Sin, -TazOs is deposited on the surface of the resistor 23, thereby completing the thermal head.
以上の如くして製作されたサーマルヘッドの抵抗値のば
らつきは±１０％程度であり、平面上に発熱体を形成し
た場合と同程度であり、充分な加工精度が得られた。The variation in resistance value of the thermal head manufactured as described above was about ±10%, which was about the same as when the heating element was formed on a flat surface, and sufficient processing accuracy was obtained.
本発明の加工法を採用することによって、密着型イメー
ジセンササーマルヘッド等のハイブリット素子の小型化
を図ることができる。By employing the processing method of the present invention, it is possible to downsize a hybrid element such as a contact type image sensor thermal head.
以上説明した通り、本発明のフォトリソエツチング加工
法によれば、被エツチング物に貼着するフォトレジスト
に予め所望のパターンを露光させておくようにしたため
、曲面を有する基板に対するフォトエツチング加工を高
精度に行なうことができる。As explained above, according to the photolithographic etching process method of the present invention, a desired pattern is exposed in advance on the photoresist that is attached to the object to be etched, so that the photoetching process on a curved substrate can be performed with high precision. can be done.
第１図（ａ）、 （ｂｌ、 （ｃｌ、 （ｄ）、 （ｅ
）、 （ｆ）は本発明方法の実施工程を示す説明図、第
２図（ａ）、 （ｂｌ、 （ｃｌ、 （ａ＋。
（ｅ）、 （ｆ）、 （ｇ）は本発明を適用したサトイ
・ヘッドの製作工程を示す説明図、第３図は曲面を有す
る基板に対する従来のフォトエツチング加工法の説明図
。
符号の説明
１・・・ステージ、 ２・・・ドライフィルムレジス
ト、３・・・ホトマスク、４・・・光源、 ５・・・レ
ジスト、６・・・導体薄膜、 １０・・・基板。
特許出願人 富士ゼロックス株式会社代理人 弁理士
松 原 伸 ２
同 同 村木清司
同 同 上島淳−
同 同 酒井宏明
第１図
（ｆ。
第２図
２υ
第３図Figure 1 (a), (bl, (cl), (d), (e
), (f) are explanatory diagrams showing the implementation steps of the method of the present invention, and Figure 2 (a), (bl, (cl, (a+) An explanatory diagram showing the manufacturing process of the Satoy head. Fig. 3 is an explanatory diagram of the conventional photoetching process method for a substrate with a curved surface. Explanation of symbols 1...stage, 2...dry film resist, 3...・Photomask, 4...Light source, 5...Resist, 6...Conductor thin film, 10...Substrate.Patent applicant Fuji Xerox Co., Ltd. Agent Patent attorney Shin Matsuhara 2 Same as Seiji Muraki Same as Uejima Atsushi - Same Hiroaki Sakai Figure 1 (f. Figure 2 2υ Figure 3
Claims (2)
ッチングを行なうフォトリソエッチング加工法において
、 貼着前の前記フォトレジストに予め所望のパターンの露
光を実施することを特徴とするフォトリソエッチング加
工法。(1) A photolithographic etching processing method in which a film-like photoresist is attached to a target surface and etched, and the photolithographic etching processing method is characterized in that the photoresist is previously exposed to light in a desired pattern before being attached. .
施されたレジストを、少なくとも露光側面が透明なフィ
ルム材によって両面が保護され、且つ、容易に剥離可能
に形成したことを特徴とする特許請求の範囲第１項記載
のフォトリソエッチング加工法。(2) The photoresist is a resist that has been exposed to light in a desired pattern, is protected on both sides by a transparent film material at least on the exposed side, and is easily removable. The photolithographic etching method according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22118885A JPS6280281A (en) | 1985-10-04 | 1985-10-04 | Photolithoetching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22118885A JPS6280281A (en) | 1985-10-04 | 1985-10-04 | Photolithoetching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6280281A true JPS6280281A (en) | 1987-04-13 |
| JPH0520515B2 JPH0520515B2 (en) | 1993-03-19 |
Family
ID=16762854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22118885A Granted JPS6280281A (en) | 1985-10-04 | 1985-10-04 | Photolithoetching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6280281A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103313520A (en) * | 2012-03-14 | 2013-09-18 | 深圳光启创新技术有限公司 | Curved-surface metal graphic manufacturing method and curved-surface metal graphic substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916433A (en) * | 1982-07-20 | 1984-01-27 | Matsushita Electric Ind Co Ltd | Selective calling receiver |
-
1985
- 1985-10-04 JP JP22118885A patent/JPS6280281A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916433A (en) * | 1982-07-20 | 1984-01-27 | Matsushita Electric Ind Co Ltd | Selective calling receiver |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103313520A (en) * | 2012-03-14 | 2013-09-18 | 深圳光启创新技术有限公司 | Curved-surface metal graphic manufacturing method and curved-surface metal graphic substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0520515B2 (en) | 1993-03-19 |
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