JPH0679156B2 - Glass mask manufacturing method - Google Patents
Glass mask manufacturing methodInfo
- Publication number
- JPH0679156B2 JPH0679156B2 JP9696085A JP9696085A JPH0679156B2 JP H0679156 B2 JPH0679156 B2 JP H0679156B2 JP 9696085 A JP9696085 A JP 9696085A JP 9696085 A JP9696085 A JP 9696085A JP H0679156 B2 JPH0679156 B2 JP H0679156B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- metal film
- metal
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、ガラスマスクの製造方法に関する。Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for manufacturing a glass mask.
〔発明の技術的背景〕 従来、ガラスマスクの製造は、次のように行われてい
る。先ず、第２図（Ａ）に示す如く、ガラス基板１上に
所定の膜厚でクロム等からなる金属膜２を形成する。次
いで、同図（Ｂ）に示す如く、金属膜２上にレジスト膜
３を形成し、このレジスト膜３に選択的に露光を施した
後現像を行い、開口部４を形成する。次に、同図（Ｃ）
に示す如く、所定のエッチング液を用いてレジスト膜３
をマスクにして金属膜２をパターニングし、所定形状の
マスク開口部５を形成し、次に同図（Ｄ）に示すように
レジスト膜３を除去してガラスマスク10を得る。[Technical background of the invention] Conventionally, a glass mask is manufactured in the following manner. First, as shown in FIG. 2A, a metal film 2 made of chromium or the like is formed on the glass substrate 1 to have a predetermined film thickness. Next, as shown in FIG. 3B, a resist film 3 is formed on the metal film 2, and the resist film 3 is selectively exposed and then developed to form an opening 4. Next, the same figure (C)
As shown in FIG.
The metal film 2 is patterned as a mask to form a mask opening portion 5 of the predetermined shape to obtain a glass mask 10 and then removing the resist film 3 as shown in FIG. (D).
しかしながら、従来のガラスマスクの製造方法では、レ
ジスト膜３に形成される開口部４が第２図（Ｂ）に示す
ように傾斜しており、かつ金属膜２をエッチングする際
にレジスト膜３も若干エッチングされ開口部４は第２図
（Ｂ）に点線で示す如く拡大された開口部６となる。こ
のため金属膜２のマスク開口５は、当初予定したものよ
りも大きくなってしまう。しかもエッチング液によって
拡大される開口部６の形状を正確に把握することはほと
んど不可能であるため、マスク開口部５を高い形状精度
で形成することができなかった。その結果、サブミクロ
ン寸法の微細なパターニングを確実に実現できるガラス
マスクを得ることができない問題があった。However, in the conventional method of manufacturing a glass mask, the opening 4 formed in the resist film 3 is inclined as shown in FIG. 2 (B), and the resist film 3 is also etched when the metal film 2 is etched. After being slightly etched, the opening 4 becomes an enlarged opening 6 as shown by a dotted line in FIG. Therefore, the mask opening 5 of the metal film 2 becomes larger than initially planned. Moreover, since it is almost impossible to accurately grasp the shape of the opening 6 enlarged by the etching liquid, the mask opening 5 cannot be formed with high shape accuracy. As a result, there is a problem that it is not possible to obtain a glass mask that can surely realize fine patterning of submicron dimensions.
また特開昭51−78988号公報には、表面に金属薄膜を被
着した基板上に被着されたポジタイプのフォトレジスト
を露光・現像し、前工程により現像されたフォトレジス
トのポジ像と表出した前記金属膜上に金属酸化物薄膜を
付着させた後、前記フォトレジストを剥離することによ
り、その上に付着した金属薄膜を剥離しその後該金属酸
化物薄膜をマスクとして前記金属薄膜をエッチングする
ことを特徴とするネガマスクの製造方法が開示されてい
る。このネガマスクの製造方法では、レジスト膜の開口
部に露光する金属薄膜の上だけでなく、この開口部を含
むレジスト膜の上に一様に金属酸化物薄膜をスパッタリ
ング等によって形成する。次いで、この金属酸化物薄膜
のうちレジスト膜の上に形成された部分のみを、金属酸
化物薄膜の付着状態を利用してレジスト膜と共に除去す
る。次に、金属酸化物薄膜により形成されたネガマスク
を得た後、このネガマスクをマスクとしてクロム薄膜を
エッチングして、ガラスマスクを得ている。Further, in JP-A-51-78988, a positive type photoresist deposited on a substrate having a metal thin film deposited on its surface is exposed and developed, and a positive image and a positive image of the photoresist developed in the previous step are shown. After depositing a metal oxide thin film on the exposed metal film, by peeling off the photoresist, the metal thin film deposited on it is peeled off, and then the metal thin film is etched using the metal oxide thin film as a mask. Disclosed is a method for manufacturing a negative mask. In this negative mask manufacturing method, not only on the metal thin film exposed to the openings of the resist film, but also on the resist film including the openings, a metal oxide thin film is uniformly formed by sputtering or the like. Then, only the portion of the metal oxide thin film formed on the resist film is removed together with the resist film by utilizing the adhered state of the metal oxide thin film. Next, after obtaining a negative mask formed of a metal oxide thin film, the chromium thin film is etched using this negative mask as a mask to obtain a glass mask.
しかしながら、レジスト膜を剥離することにより金属酸
化物薄膜を除去しているため、レジスト膜を剥離すると
きに、残される金属酸化物薄膜の周縁部が乱れるため、
形成精度が著しく低く、また、これらの薄膜の断片がゴ
ミとして基板の上に残ってしまう欠点がある。However, since the metal oxide thin film is removed by peeling the resist film, the peripheral portion of the remaining metal oxide thin film is disturbed when peeling the resist film,
The formation accuracy is extremely low, and fragments of these thin films remain as dust on the substrate.
本発明は、ガラス基板上に所定パターンの金属膜を極め
て高い形状精度で、かつ、容易に形成してサブミクロン
寸法のパターニングを確実に実現できるガラスマスクの
製造方法に提供することをその目的とするものである。It is an object of the present invention to provide a method for manufacturing a glass mask, which can form a metal film having a predetermined pattern on a glass substrate with extremely high shape accuracy, and can easily realize patterning in a submicron dimension with ease. To do.
本発明は、金属膜よりも耐食性に優れたマスク部材をマ
スクにして金属膜のパターニングを行うことにより、ガ
ラス基板上に所定パターンの金属膜を極めて高い形状精
度で、かつ、容易に形成してサブミクロン寸法のパター
ニングを確実に実現できるガラスマスクの製造方法であ
る。The present invention is capable of easily forming a metal film having a predetermined pattern on a glass substrate with extremely high shape accuracy by patterning the metal film using a mask member having a corrosion resistance higher than that of the metal film as a mask. This is a method for manufacturing a glass mask that can reliably realize submicron patterning.
〔発明の実施例〕 以下、本発明の実施例について図面を参照して説明す
る。先ず、第１図（Ａ）に示す如く、ガラス基板20上に
所定の膜厚でクロム等からなる金属膜21を形成する。次
いで、同図（Ｂ）に示す如く、金属膜21上にレジスト膜
22を形成し、このレジスト膜22に選択的に露光を施した
後現像を行い開口部23を形成する。次いで金属膜21を電
極として電気メッキ法により開口部23によって露出した
金属膜21の表面のみにマスク層24を形成する。Embodiments of the Invention Embodiments of the present invention will be described below with reference to the drawings. First, as shown in FIG. 1A, a metal film 21 made of chromium or the like is formed on the glass substrate 20 to have a predetermined film thickness. Then, as shown in FIG. 2B, a resist film is formed on the metal film 21.
22 is formed, and the resist film 22 is selectively exposed and then developed to form an opening 23. Next, using the metal film 21 as an electrode, a mask layer 24 is formed only on the surface of the metal film 21 exposed by the opening 23 by electroplating.
このマスク層24としては、後述する金属膜21のエッチン
グに対して金属膜21よりも耐食性に優れた金、白金、モ
リブデン、タングステン、銅等を使用する。As the mask layer 24, gold, platinum, molybdenum, tungsten, copper or the like, which has a higher corrosion resistance than the metal film 21 against etching of the metal film 21 described later, is used.
次に、同図（Ｃ）に示す如く、レジスト膜22を溶剤にて
溶解し、アッシング等により除去する。然る後、残存し
たマスク層24をマスクにして金属膜21を所定のエッチン
グ液でパターニングし同図（Ｄ）に示す如く残膜パター
ン25を形成したポジ型のガラスマスク30を得る。Next, as shown in FIG. 3C, the resist film 22 is dissolved in a solvent and removed by ashing or the like. Then, using the remaining mask layer 24 as a mask, the metal film 21 is patterned with a predetermined etching solution to obtain a positive type glass mask 30 on which a residual film pattern 25 is formed as shown in FIG.
このように金属膜21のパターニングは、金属膜21よりも
そのエッチングに対して耐食性に優れたマスク層24をマ
スクにして行うので、パターニングの際にマスク層24の
形状が変化することはない。このため、極めて高い形状
精度で所定の残膜パターン25を容易に得ることができ
る。その結果、サブミクロン寸法のパターニングを確実
に実現できるガラスマスク30を得ることができる。In this way, the patterning of the metal film 21 is performed using the mask layer 24, which is more excellent in corrosion resistance than the metal film 21 against etching, as a mask, and therefore the shape of the mask layer 24 does not change during patterning. Therefore, the predetermined residual film pattern 25 can be easily obtained with extremely high shape accuracy. As a result, it is possible to obtain the glass mask 30 that can surely realize submicron patterning.
また、第２図（Ｂ）に示すように、電気メッキ法により
レジスト膜22の開口部23にのみマスク層24を設けてい
る。これにより、マスク層24はそのまま薄膜22の上に残
し、レジスト膜23のみを除去することができる。このた
め、マスク層24は、レジスト膜23を除去する際に影響を
受け難く、優れた形状精度で形成することができる。Further, as shown in FIG. 2B, the mask layer 24 is provided only in the opening 23 of the resist film 22 by the electroplating method. As a result, the mask layer 24 can be left as it is on the thin film 22, and only the resist film 23 can be removed. Therefore, the mask layer 24 is not easily affected by removing the resist film 23 and can be formed with excellent shape accuracy.
以上説明した如く、本発明に係るガラスマスクの製造方
法によれば、ガラス基板上に所定パターンの金属膜を極
めて高に形状精度で、かつ、容易に形成してサブミクロ
ン寸法のパターニングを確実に実現できるガラスマスク
を得ることができるものである。As described above, according to the method for manufacturing a glass mask of the present invention, a metal film having a predetermined pattern is formed on a glass substrate with extremely high shape accuracy and easily to ensure submicron patterning. A glass mask that can be realized can be obtained.
第１図（Ａ）乃至同図（Ｄ）は、本発明の実施例を工程
順に示す説明図、第２図（Ａ）乃至同図（Ｄ）は、従来
のガラスマスクの製造方法を工程順に示す説明図であ
る。 20……ガラス基板、21……金属膜、22……レジスト膜、
23……開口部、24……マスク層、25……残膜パターン、
30……ガラスマスク。1 (A) to 1 (D) are explanatory views showing an embodiment of the present invention in the order of steps, and FIGS. 2 (A) to 2 (D) are the steps in a conventional glass mask manufacturing method. It is an explanatory view shown. 20 …… glass substrate, 21 …… metal film, 22 …… resist film,
23 …… Aperture, 24 …… Mask layer, 25 …… Residual film pattern,
30 …… Glass mask.
Claims (1)
する工程と、該金属膜上にレジスト膜を形成する工程
と、該レジスト膜にパターニングを施して前記金属膜を
所定のパターンで露出する開口部を形成する工程と、該
開口部に露出している前記金属膜の表面のみに該金属膜
のエッチングに対して前記金属膜より耐食性に優れたマ
スク層を電気メッキ法により形成する工程と、前記レジ
スト膜を除去し前記マスク層をマスクにして前記金属膜
をエッチングによりパターニングする工程とを具備する
ことを特徴とするガラスマスクの製造方法。1. A step of forming a metal film having a predetermined thickness on a glass substrate, a step of forming a resist film on the metal film, and a step of patterning the resist film to form the metal film in a predetermined pattern. And a step of forming a mask layer having a corrosion resistance higher than that of the metal film against etching of the metal film only on the surface of the metal film exposed in the opening by electroplating. And a step of removing the resist film and patterning the metal film by etching using the mask layer as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9696085A JPH0679156B2 (en) | 1985-05-08 | 1985-05-08 | Glass mask manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9696085A JPH0679156B2 (en) | 1985-05-08 | 1985-05-08 | Glass mask manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61255347A JPS61255347A (en) | 1986-11-13 |
| JPH0679156B2 true JPH0679156B2 (en) | 1994-10-05 |
Family
ID=14178820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9696085A Expired - Lifetime JPH0679156B2 (en) | 1985-05-08 | 1985-05-08 | Glass mask manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0679156B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6811959B2 (en) | 2002-03-04 | 2004-11-02 | International Business Machines Corporation | Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5178988A (en) * | 1974-12-30 | 1976-07-09 | Fujitsu Ltd | Negamasukuno seizohoho |
| JPS5293274A (en) * | 1976-01-31 | 1977-08-05 | Toppan Printing Co Ltd | Method of manufacturing negative type photomask by way of new lift off process |
-
1985
- 1985-05-08 JP JP9696085A patent/JPH0679156B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61255347A (en) | 1986-11-13 |
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