JPS628011B2 - - Google Patents
Info
- Publication number
- JPS628011B2 JPS628011B2 JP1654481A JP1654481A JPS628011B2 JP S628011 B2 JPS628011 B2 JP S628011B2 JP 1654481 A JP1654481 A JP 1654481A JP 1654481 A JP1654481 A JP 1654481A JP S628011 B2 JPS628011 B2 JP S628011B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- irradiated
- annealing
- oxide film
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1654481A JPS57130435A (en) | 1981-02-05 | 1981-02-05 | Annealing method of matter by light beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1654481A JPS57130435A (en) | 1981-02-05 | 1981-02-05 | Annealing method of matter by light beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57130435A JPS57130435A (en) | 1982-08-12 |
| JPS628011B2 true JPS628011B2 (enrdf_load_stackoverflow) | 1987-02-20 |
Family
ID=11919200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1654481A Granted JPS57130435A (en) | 1981-02-05 | 1981-02-05 | Annealing method of matter by light beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57130435A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130708U (enrdf_load_stackoverflow) * | 1989-03-31 | 1990-10-29 | ||
| JPH0340007U (enrdf_load_stackoverflow) * | 1989-08-28 | 1991-04-17 | ||
| JP2007109943A (ja) * | 2005-10-14 | 2007-04-26 | Shibuya Kogyo Co Ltd | レーザアニール方法およびその装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0811828B2 (ja) * | 1985-12-24 | 1996-02-07 | キヤノン株式会社 | 堆積膜形成方法 |
-
1981
- 1981-02-05 JP JP1654481A patent/JPS57130435A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130708U (enrdf_load_stackoverflow) * | 1989-03-31 | 1990-10-29 | ||
| JPH0340007U (enrdf_load_stackoverflow) * | 1989-08-28 | 1991-04-17 | ||
| JP2007109943A (ja) * | 2005-10-14 | 2007-04-26 | Shibuya Kogyo Co Ltd | レーザアニール方法およびその装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57130435A (en) | 1982-08-12 |
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