JPS627774U - - Google Patents
Info
- Publication number
- JPS627774U JPS627774U JP9974685U JP9974685U JPS627774U JP S627774 U JPS627774 U JP S627774U JP 9974685 U JP9974685 U JP 9974685U JP 9974685 U JP9974685 U JP 9974685U JP S627774 U JPS627774 U JP S627774U
- Authority
- JP
- Japan
- Prior art keywords
- gate
- thyristor
- turn
- gate turn
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Power Conversion In General (AREA)
Description
第１図は本考案の一実施例を示す回路図、第２
図は従来の制御回路図、第３図は第２図の等価回
路図、第４図および第５図はともに電流、電圧波
形図、第６図ａ，ｂはともに電流経路を示す等価
回路図である。
１……主ゲートターンオフサイリスタ、２……
補助ゲートターンオフサイリスタ、３，６，１６
……オフゲート電源、４……オンゲート電源、５
，７，８……スイツチ、ＬＸＹ……配線インダク
タンス。
Figure 1 is a circuit diagram showing one embodiment of the present invention;
The figure is a conventional control circuit diagram, Figure 3 is an equivalent circuit diagram of Figure 2, Figures 4 and 5 are both current and voltage waveform diagrams, and Figures 6a and b are equivalent circuit diagrams showing current paths. It is. 1... Main gate turn-off thyristor, 2...
Auxiliary gate turn-off thyristor, 3, 6, 16
...Off-gate power supply, 4...On-gate power supply, 5
,7,8...Switch, LXY...Wiring inductance.
Claims (1)
トターンオフサイリスタのアノードどうしを共通
接続するとともに、補助ゲートターンオフサイリ
スタのカソードを主ゲートターンオフサイリスタ
のゲートに接続した増幅ゲート形ゲートターンオ
フサイリスタにおいて、 前記主ゲートターンオフサイリスタのゲートと
補助ゲートターンオフサイリスタのカソードの共
通接続点と補助ゲートターンオフサイリスタのゲ
ートとを結ぶ電路に、前記共通接続点とオフゲー
ト電源を結ぶ電路の配線インダクタンスと主ゲー
トターンオフサイリスタに流れるオフゲート電流
の減少率との積に等しいか又は該積よりも大きい
出力電圧を有するオフゲート電源を介挿したこと
を特徴とする増幅ゲート形ゲートターンオフサイ
リスタの制御装置。[Claims for Utility Model Registration] An amplified gate type gate turn-off thyristor in which the anodes of the main gate turn-off thyristor and the auxiliary gate turn-off thyristor are commonly connected, and the cathode of the auxiliary gate turn-off thyristor is connected to the gate of the main gate turn-off thyristor, A wiring inductance of an electric path connecting the common connection point and the off-gate power supply and the main gate turn-off thyristor is applied to an electric path connecting the common connection point of the gate of the main gate turn-off thyristor and the cathode of the auxiliary gate turn-off thyristor and the gate of the auxiliary gate turn-off thyristor. 1. A control device for an amplified gate type gate turn-off thyristor, characterized in that an off-gate power supply having an output voltage equal to or larger than the product of the reduction rate of the flowing off-gate current is inserted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9974685U JPS627774U (en) | 1985-06-28 | 1985-06-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9974685U JPS627774U (en) | 1985-06-28 | 1985-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS627774U true JPS627774U (en) | 1987-01-17 |
Family
ID=30968910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9974685U Pending JPS627774U (en) | 1985-06-28 | 1985-06-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627774U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100385789B1 (en) * | 1999-07-15 | 2003-06-02 | 니뽄 가이시 가부시키가이샤 | Gate driving circuit of power semiconductor switch |
| KR100398000B1 (en) * | 2001-09-11 | 2003-09-19 | 현대자동차주식회사 | Apparatus for gate driving for controlling of Insulated Gate Bipolar Transistor dual module |
-
1985
- 1985-06-28 JP JP9974685U patent/JPS627774U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100385789B1 (en) * | 1999-07-15 | 2003-06-02 | 니뽄 가이시 가부시키가이샤 | Gate driving circuit of power semiconductor switch |
| KR100398000B1 (en) * | 2001-09-11 | 2003-09-19 | 현대자동차주식회사 | Apparatus for gate driving for controlling of Insulated Gate Bipolar Transistor dual module |
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