JPS627774U - - Google Patents

Info

Publication number
JPS627774U
JPS627774U JP9974685U JP9974685U JPS627774U JP S627774 U JPS627774 U JP S627774U JP 9974685 U JP9974685 U JP 9974685U JP 9974685 U JP9974685 U JP 9974685U JP S627774 U JPS627774 U JP S627774U
Authority
JP
Japan
Prior art keywords
gate
thyristor
turn
gate turn
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9974685U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9974685U priority Critical patent/JPS627774U/ja
Publication of JPS627774U publication Critical patent/JPS627774U/ja
Pending legal-status Critical Current

Links

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  • Power Conversion In General (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例を示す回路図、第2
図は従来の制御回路図、第3図は第2図の等価回
路図、第4図および第5図はともに電流、電圧波
形図、第6図a,bはともに電流経路を示す等価
回路図である。 1……主ゲートターンオフサイリスタ、2……
補助ゲートターンオフサイリスタ、3,6,16
……オフゲート電源、4……オンゲート電源、5
,7,8……スイツチ、LXY……配線インダク
タンス。
Figure 1 is a circuit diagram showing one embodiment of the present invention;
The figure is a conventional control circuit diagram, Figure 3 is an equivalent circuit diagram of Figure 2, Figures 4 and 5 are both current and voltage waveform diagrams, and Figures 6a and b are equivalent circuit diagrams showing current paths. It is. 1... Main gate turn-off thyristor, 2...
Auxiliary gate turn-off thyristor, 3, 6, 16
...Off-gate power supply, 4...On-gate power supply, 5
,7,8...Switch, LXY...Wiring inductance.

Claims (1)

【実用新案登録請求の範囲】 主ゲートターンオフサイリスタおよび補助ゲー
トターンオフサイリスタのアノードどうしを共通
接続するとともに、補助ゲートターンオフサイリ
スタのカソードを主ゲートターンオフサイリスタ
のゲートに接続した増幅ゲート形ゲートターンオ
フサイリスタにおいて、 前記主ゲートターンオフサイリスタのゲートと
補助ゲートターンオフサイリスタのカソードの共
通接続点と補助ゲートターンオフサイリスタのゲ
ートとを結ぶ電路に、前記共通接続点とオフゲー
ト電源を結ぶ電路の配線インダクタンスと主ゲー
トターンオフサイリスタに流れるオフゲート電流
の減少率との積に等しいか又は該積よりも大きい
出力電圧を有するオフゲート電源を介挿したこと
を特徴とする増幅ゲート形ゲートターンオフサイ
リスタの制御装置。
[Claims for Utility Model Registration] An amplified gate type gate turn-off thyristor in which the anodes of the main gate turn-off thyristor and the auxiliary gate turn-off thyristor are commonly connected, and the cathode of the auxiliary gate turn-off thyristor is connected to the gate of the main gate turn-off thyristor, A wiring inductance of an electric path connecting the common connection point and the off-gate power supply and the main gate turn-off thyristor is applied to an electric path connecting the common connection point of the gate of the main gate turn-off thyristor and the cathode of the auxiliary gate turn-off thyristor and the gate of the auxiliary gate turn-off thyristor. 1. A control device for an amplified gate type gate turn-off thyristor, characterized in that an off-gate power supply having an output voltage equal to or larger than the product of the reduction rate of the flowing off-gate current is inserted.
JP9974685U 1985-06-28 1985-06-28 Pending JPS627774U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9974685U JPS627774U (en) 1985-06-28 1985-06-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9974685U JPS627774U (en) 1985-06-28 1985-06-28

Publications (1)

Publication Number Publication Date
JPS627774U true JPS627774U (en) 1987-01-17

Family

ID=30968910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9974685U Pending JPS627774U (en) 1985-06-28 1985-06-28

Country Status (1)

Country Link
JP (1) JPS627774U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385789B1 (en) * 1999-07-15 2003-06-02 니뽄 가이시 가부시키가이샤 Gate driving circuit of power semiconductor switch
KR100398000B1 (en) * 2001-09-11 2003-09-19 현대자동차주식회사 Apparatus for gate driving for controlling of Insulated Gate Bipolar Transistor dual module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385789B1 (en) * 1999-07-15 2003-06-02 니뽄 가이시 가부시키가이샤 Gate driving circuit of power semiconductor switch
KR100398000B1 (en) * 2001-09-11 2003-09-19 현대자동차주식회사 Apparatus for gate driving for controlling of Insulated Gate Bipolar Transistor dual module

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