KR100398000B1 - Apparatus for gate driving for controlling of Insulated Gate Bipolar Transistor dual module - Google Patents

Abstract

The present invention relates to a gate driving device for driving a power semiconductor device of a dual module in a three-phase AC / DC converter of the gate driving device.

To this end, the present invention is a gate trigger hybrid integrated circuit (Gate trigger hybrid integrated circuit) on both sides of a substrate so that the two power semiconductor devices can drive the power module of the dual module present in one package ), And the gating circuit board can be hybrid integrated circuit with optocoupler and capacitor.

Accordingly, the present invention not only can simplify the circuit design, reduce the number of parts, and reduce the stray inductance without any influence on the area of the power board by mounting the gating circuit board vertically on the power board. In addition to the gate-triggered hybrid integrated circuit, optocouplers and filter capacitors are also mounted on both sides of the board to make hybrid integrated circuits easier to maintain and maintain the power boards. It provides cost savings of 3%.

Description

Gate driving device for driving power semiconductor elements of dual modules {Apparatus for gate driving for controlling of Insulated Gate Bipolar Transistor dual module}

The present invention relates to a design structure of a gate trigger hybrid integrated circuit of an AC / DC converter, and more particularly, to a two gate trigger hybrid integrated circuit for driving a dual module power semiconductor device (Insulated Gate Bipolar Transistor, IGBT). The present invention relates to a gate module for driving a dual-module power semiconductor device, in which a double-sided module is designed on both sides of a substrate to be vertically mounted on a printed circuit board.

Recently, with the introduction of microprocessors such as 32-bit digital signal processors (DSPs) capable of high-speed operation, power electronics technology using them has been rapidly developed.

Among the devices using the power electronic technology, gate driving devices such as converters and inverters, and AC motor driving devices are important developments that form the basis of industrial development.

In particular, Figure 1 is a circuit diagram showing the configuration of a typical three-phase AC / DC converter as follows.

The converter for converting an AC power source into a DC power source includes a control unit 10 that controls voltage / current to generate and output a pulse width modulation (PWM) control signal, and a plurality of switching elements M1 and M2. , The power unit 20 for converting the actual power form through the on / off switching operation of M3, and the gate trigger unit for driving the switching element of the power unit 20 by amplifying the control signal of the control unit 10. (30).

Here, the controller 10 includes a voltage controller 11, a current controller 12, a triangle wave comparator 13, and a current sensor. The controller 10 may include three-phase input voltages V _R , V _S and V _T input to the power unit 20, V _DC-link feedback values of the power unit 20, and R and S phase input currents. The control unit outputs a control signal for controlling the constant voltage of the V _DC-link of the power unit 20 by the voltage controller 11 and the current controller 12 to the gate trigger unit 30.

In addition, the power unit 20 uses an insulated gate bipolar transistor (IGBT) as a switching device (M1, M2, M3), which is a power semiconductor device, and the IGBT is a transistor having a low on-stage voltage drop. It has the advantages of Field Effect Transistors (FETs) with low switching losses.

The switching elements M1, M2, and M3 are formed in a double module form in which two IGBTs are formed on one substrate to realize one package form.

In addition, the gate trigger unit 30 includes as many gate trigger drivers as the number of IGBTs to amplify the control signal of the control unit 10 to drive each IGBT, protect the overcurrent of the IGBT, and drive the gate. It is also responsible for undervoltage protection of the voltage.

The gate trigger unit 30 described above is a gate trigger hybrid integrated circuit (HIC), and its output depends on the specification of the switching element.

In general, the output of a gate trigger hybrid integrated circuit used in an industrial gate drive device of 10 to 50 kW is a low voltage / low current of less than 20V / 2A. In the process of controlling the high voltage / high current gate driving device using the low voltage / low current gate trigger, the gate trigger unit 30 close to the power unit 20 has a change rate of voltage and current with respect to the time generated from the power unit. , Ie, susceptible to di / dt and dv / dt.

As a countermeasure against this, first, the insulation of the control part 10 and the power part 20 should be ensured, and the role is played by the optocoupler. Next, a short circuit distance between the gate terminal of the switching element M1 of the power unit 20 and the output pin of the gate trigger unit 30 is reduced to at least reduce the stray inductance present on the conductive line. It is important.

Although the gate trigger unit 30 is somewhat different depending on the capacitance, it is mostly a hybrid integrated circuit mounted on a printed circuit board (PCB) and drives one IGBT with one gate trigger hybrid integrated circuit.

2 is a diagram illustrating a structure of a gate trigger hybrid integrated circuit for driving a power semiconductor device of a dual module according to the prior art.

Referring to FIG. 2, an IGBT dual module M in which IGBT1 and IGBT2 are paired, two gate trigger HICs GT1 and GT2 for driving IGBT1 and IGBT2 of the IGBT dual module M, respectively, Optocouplers (U1, U2) and filter capacitors (C1, C2) and gate trigger HICs (GT1, GT2) installed in front of the gate trigger HICs (GT1, GT2) to perform isolation and noise filtering functions. _It includes a pulse converter (T1) for supplying ( _G1 , V _G2 ).

In particular, the gate trigger HIC (GT1, GT2) is a voltage monitoring unit 31 for monitoring the driving voltage by using the characteristics of the Zener diode (Zenor diode), and the arm short (Arm short) in advance to prevent about 2㎲ Dead time application unit 32 for delaying and preventing breakage of the IGBT, overcurrent protection unit 33 for preventing the voltage across the IGBT from rising above a certain value and becoming an overcurrent state; And a push-pull amplifier 33 that delivers a lot of power to the.

The basic operation of the devices around the gate trigger hybrid integrated circuit is as follows.

The pulse converter T1 supplies the insulation voltages V _G1 and V _G2 to the two gate triggers HIC GT1 and GT2 by reducing the AC voltage transmitted from the separate power supply to the gate driving voltage level.

The controller 10 transfers the gate control signal to the optocouplers U1 and U2. Then, the optocouplers U1 and U2 transmit an insulated signal by light between the control unit 10 of FIG. 1 and the power unit 20 on the secondary side of the optocoupler. In this process, the capacitors C1 and C2 connected to the secondary side of the optocoupler perform a noise filtering function.

R _G1 and R _G2 are set to apply an appropriate current to the IGBT dual module M, and turn on / off corresponding IGBTs (IGBT1, IGBT2) according to the driving signals of the gate triggers HIC (GT1, GT2). Dsat.1 and Dsat.2 monitor the voltage across the collector and emitter of each IGBT for arm-short protection of the IGBT1 and IGBT2.

Conventional gate trigger HIC (GT1, GT2) is a structure capable of driving one IGBT with one HIC, optocouplers (U1, U2) and capacitors (C1, C2) are not included in the HIC separately on the PCB Each must be mounted.

Therefore, a total of 18 components, including IGBTs, optocouplers, and capacitors, as well as six gate-triggered HICs, are required for the converter configuration. Therefore, in the conventional case, each component placement problem, area, and pattern processing when mounting components in a PCB are handled. There is a problem in that the circuit configuration becomes complicated.

In addition, since the number of components constituting the converter gate trigger HIC in the converter configuration is difficult and complicated assembly in the work process, there is also a problem that the cost of the product increases.

In addition, the IGBT dual module M is virtually impossible to place as close as possible to the two gate trigger HICs at the two gate terminals of the IGBT, as shown in FIG. 3 the external configuration and equivalent circuit diagram of the IGBT dual module. . Therefore, the distance between the gate terminal of the IGBT and the output pin of the gate trigger HIC should be kept as short as possible, but the stray inductance present on the lead is reduced, and the distortion and switching malfunction of the gate trigger signal due to the di / dt and dv / dt of the power part are reduced. There is a problem in that adverse effects such as phenomenon can be minimized.

That is, the IGBT dual module has a structure in which the gate terminal A of the IGBT connected to the gate trigger HIC is located on the same line in both the IGBT1 and the IGBT2. In addition, since the IGBT dual module must be disposed with two gate trigger HICs, two optocouplers, and two capacitors on the PCB, there is a problem in securing PCB free space, and thus it is impossible to place the IGBT dual module close to the gate trigger HIC.

As such, since the gate trigger HIC and the IGBT dual module are remotely disposed, there is a problem in that the stray inductance is relatively increased, and therefore, the noise is easily affected.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to compactly design a gate trigger hybrid integrated circuit 2-in-1 to drive a dual module power semiconductor device in a converter. It is to provide a gate drive device for driving a dual module power semiconductor element that simplifies the configuration and reduces stray inductance.

In addition, an object of the present invention is to reduce the number of parts required by hybridizing the gate trigger hybrid integrated circuit, the optocoupler and the capacitor together to increase the space utilization of other components and simplify the assembly process in the design of the printed board, To provide a dual-module power semiconductor device driving gate drive device that also lowers the price of the product.

1 is a circuit diagram showing the configuration of a typical three-phase AC / DC converter.

2 is a diagram illustrating a structure of a gate trigger hybrid integrated circuit for driving a power semiconductor device of a dual module according to the prior art.

3 is a diagram illustrating an external circuit and an equivalent circuit of a general IGBT dual module.

4 is a block diagram illustrating a configuration of a gate driving apparatus for driving a power semiconductor element of a dual module as an embodiment according to the present invention.

5 is a diagram illustrating a test waveform of generation of dead time in a gate trigger hybrid integrated circuit.

6 is a diagram illustrating a gating circuit board of an embodiment according to the present invention and a board outline of a gate trigger hybrid integrated circuit of the related art.

The present invention for achieving the above object is a control unit for generating a pulse width modulated gate control signal by controlling the voltage / current, two power semiconductor devices are installed in one package, each semiconductor device is turned on Power semiconductor elements of a dual module that are on / off and instruct power conversion, and gate trigger hybrid integrated circuits are provided on both sides of a substrate, respectively, and are gated from the controller. Gating circuit boards that receive control signals and amplify them to drive power semiconductor elements of a dual module, and a plurality of optocouplers and capacitors installed between the controller and the gating circuit boards to perform insulation and noise filtering functions. On / off of the power semiconductor elements of the dual module while the voltage / current is continuously sensed by the controller In accordance with the print operation, comprising: a power that is a power conversion process.

In addition, the gating circuit boards are hybrid integrated circuits by mounting a gate trigger hybrid integrated circuit, an optocoupler, and a capacitor together on both sides of a substrate.

The gate driving device for driving the power semiconductor elements of the dual module mounts the gating circuit board vertically when the component is mounted on the power board.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4 illustrates the configuration of a gate driving device for driving a power semiconductor element of a dual module according to an embodiment of the present invention.

As shown in FIG. 4, the power semiconductor devices are formed in the form of an IGBT dual module 50 in which IGBT1 and IGBT2 are simultaneously formed in one package, and the gating circuit board 60 is formed of IGBT1 in the IGBT dual module 50. And gate-triggered hybrid integrated circuits are implemented on both sides of the substrate to drive the and IGBT2, and the pulse converter 70 is a gating circuit board 60 with an insulating voltage (V _G1 ,) for each gate-triggered hybrid integrated circuit. V _G2 ) is supplied.

In this case, the gating circuit board 60 is formed in a structure in which the optical couplers U1 and U2 and the capacitors C1 and C2 are hybrid integrated circuits on each side of the substrate for each gate trigger hybrid integrated circuit.

An embodiment of the present invention is a three-phase AC / DC converter, the control unit controls the voltage / current to generate a pulse width modulated gate control signal, the gating circuit board receives the gate control signal from the control unit to amplify it by a dedicated semiconductor Drive the devices.

In addition, the three-phase AC / DC converter is installed between the control unit and the gating circuit board, a plurality of optocouplers and capacitors to perform the insulation and noise filtering function, the voltage / current is sensed by the control unit and the power of the dual module And a power unit in which power conversion is performed according to on / off operations of the semiconductor devices.

Hereinafter, the operation of the present invention configured as described above is as follows.

The gating circuit board 60 receives the insulation voltages V _G1 and V _G2 for driving the IGBT from the pulse converter 70, and outputs the gate control signals of the control unit to the optocouplers U1 and U2 and the capacitors C1 and C2. Received through)

Then, the gate trigger hybrid integrated circuits provided on both sides of the gating circuit board 60 generate driving signals for driving the IGBT1 and the IGBT2 in the IGBT dual module 50, respectively.

As shown in FIG. 4, the gating circuit board 60 has the same structure and function as the gating circuit board 60, and the function of the gate trigger hybrid integrated circuit will be described in more detail.

In addition to the function of amplifying the gate control signal of the controller, the gate trigger hybrid integrated circuit includes driving voltage monitoring units 61 and 65, dead time applying units 62 and 66, push-pull amplifiers 63 and 67, and an overcurrent protection unit ( 64, 68) to perform several functions.

That is, the driving voltage monitors 61 and 65 cut off the gate control signal when the input of the gate trigger hybrid integrated circuit is below a specific voltage (less than about 13V) by using the characteristics of the zener diode, thereby incomplete turn of the IGBT due to the low voltage. Prevents turn-on operation and protects the IGBT from failures that may occur due to incomplete turn-on operation of the IGBT.

In general, the converter has a leg between the IGBT1 and the IGBT2 in the IGBT dual module 50 between the anodes of the DC link voltage. The cathode terminal of IGBT1 and the anode terminal of IGBT2 are connected across the DC link voltage (mainly 300-600 V _DC ). Thus, IGBT1 and IGBT2 are controlled to complement the turn-on / turn-off operation.

However, there is a possibility that turn-on intervals occur at the same time as IGBT1 and IGBT2 due to the presence of turn-on and turn-off transients. In this case, an excessive short-circuit current flows into the IGBT, causing an arm-short phenomenon in which the IGBT is broken.

5 is a diagram illustrating a dead time generation experimental waveform in a gate trigger hybrid integrated circuit.

As shown in FIG. 5, the dead time applying units 62 and 66 delay the turn-on signal of the gate trigger hybrid integrated circuit with a turn-on signal of the gate signal of the control unit to prevent a dark short. Allows on-output to occur.

As a result, IGBT1 and IGBT2 have a time of about 2 ms which is turned off at the same time at the turn-on and turn-off crossing moments, thereby preventing dark short.

The push-pull amplifiers 63 and 67 are responsible for amplifying the switching control signal transmitted to the optocoupler secondary side with a large current capable of driving the IGBT.

The overcurrent protection units 64 and 68 protect the overcurrent of the IGBT, which may occur due to an error in the gate control signal of the controller, damage to the IGBT, abnormal load, and the like. Using the front side of the gating circuit board 60 as an example, the operating principle of the overcurrent protection units 64 and 68 monitors the voltage across IGBT1 at turn-on through Dsat. When rising above 7V), the gate-triggered hybrid integrated circuit forcibly outputs a turn-off signal and causes this state to latch.

Here, when the voltage across the IGBT rises above a certain value, it means that a current of a specific value or more flows through the internal resistance Ron present in the IGBT, and this state is detected as an overcurrent state.

FIG. 6 is a view illustrating a gating circuit board according to an embodiment of the present invention and a board outline of a gate trigger hybrid integrated circuit according to the related art. In comparison with a gating circuit board, an area of a gating circuit board is conventional gate trigger hybrid integrated. It is larger than the board of the circuit, but it is mounted vertically with respect to the PCB on the power board and does not affect the area of the power board.

The drawings and detailed description of the invention are merely exemplary of the invention, which are used for the purpose of illustrating the invention only and are not intended to limit the scope of the invention as defined in the appended claims or claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

The gate drive device for driving a power semiconductor device of a dual module according to the present invention is designed by designing a gate trigger hybrid integrated circuit on both sides of a substrate and mounting it vertically on a power board to drive the power semiconductor device of a dual module. This can simplify circuit design, reduce component count, and reduce stray inductance without affecting the area of the circuit.

In addition, the present invention is easy to maintain the power board by mounting the optocouplers and capacitors on both sides of the substrate together with the gate trigger hybrid integrated circuit to form a hybrid integrated circuit, the number of parts is reduced to 1/6 compared to the conventional, Therefore, the cost per power board can be reduced by 3%.

Claims (3)

A controller for controlling the voltage / current to generate a pulse width modulated gate control signal; Dual-module power semiconductor devices in which two power semiconductor devices are installed in one package, and each semiconductor device is turned on / off to instruct power conversion; A gate trigger hybrid integrated circuit is installed on both sides of one substrate, and receives a gate control signal from the controller and amplifies the gate trigger hybrid integrated circuit to drive power semiconductor elements of a dual module; A plurality of optocouplers and capacitors installed between the control unit and the gating circuit board to perform insulation and noise filtering functions; A power unit that performs a power conversion in accordance with the on / off operation of the power semiconductor elements of the dual module while the voltage / current is continuously detected by the control unit Gate driving device for power semiconductor device driving of the dual module, characterized in that it comprises a. The method of claim 1, And the gating circuit boards are hybrid integrated circuits by mounting a gate trigger hybrid integrated circuit, an optocoupler, and a capacitor together on both sides of a substrate to form a hybrid integrated circuit. The method of claim 1, The gate driving device for driving power semiconductor elements of the dual module is a gate driving device for driving power semiconductor elements of a dual module, characterized in that the mounting of the gating circuit board vertically when the component is mounted on a power board (Power board).