JP6483963B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device, and is particularly suitable for application to a power conversion device used in a railway vehicle.

  2. Description of the Related Art Generally, a power conversion device used for a railway vehicle includes a circuit such as an inverter that converts DC power into AC power, a converter that converts AC power into DC power, and a DC chopper that boosts or steps down a DC voltage. In these circuits, a power semiconductor called IGBT (Insulated Gate Bipolar Transistor) is widely used.

  The power semiconductor is driven by on and off signals from a gate drive substrate, and the gate drive substrate is driven by a signal from a control theory unit which is a controller of the converter. The power semiconductor and the gate drive substrate are connected to each other by a wiring called a gate wiring, and the gate drive substrate can detect a current flowing through the power semiconductor by connecting both of them with the gate wiring.

  The gate drive substrate is equipped with a protection function for protecting the power semiconductor, and one of the protection functions is a short-circuit protection function. When determining a short circuit, there is a method for determining a short circuit based on a voltage generated between an emitter inductance between a main emitter terminal and an auxiliary emitter terminal installed in a module including a power semiconductor (referred to as a power semiconductor module). is there.

  Patent Document 1 discloses a power conversion device equipped with a short-circuit protection function for determining a short circuit based on a voltage generated between emitter inductances. Specifically, an inductance is installed in series with the main terminal of the switching element (power semiconductor), and the current generated in the power semiconductor is detected by integrating the voltage generated at both ends of the inductance with an integration circuit during switching. A technique for judging is disclosed.

JP 2000-324846 A

  However, the power conversion device described in Patent Document 1 does not disclose any specific configuration of the gate wiring that connects the power semiconductor module and the gate drive substrate.

  FIG. 7 shows a configuration of a general gate wiring. The gate wiring is composed of a main emitter wiring that connects the main emitter terminal and the gate drive substrate, and an auxiliary emitter wiring that connects the auxiliary emitter terminal and the gate drive substrate.

  Further, the gate wiring is generally formed by making two wirings of the main emitter wiring and the auxiliary emitter wiring stranded to make the inductance as small as possible. However, in this case, the inductance cannot be made smaller than a certain value, and the current flowing through the power semiconductor may be erroneously detected due to common mode noise superimposed on the wiring.

  The present invention has been made in consideration of the above points, and proposes a power conversion device that can improve the current detection accuracy by minimizing the inductance of the gate wiring.

In the power conversion device of the present invention, in a power conversion device for a railway vehicle comprising a power semiconductor module comprising a main emitter terminal, a gate terminal and an auxiliary emitter terminal, and a gate drive substrate connected to the power semiconductor module, A power semiconductor module and the gate drive substrate are connected by a metal conductor plate, the power semiconductor module includes two convex portions and a flat portion, each of the two convex portions includes the main emitter terminal, and the flat Two sets of the gate terminal and the auxiliary emitter terminal are provided in the part, and the gate driving substrate is installed on the upper surface of the flat part, so that the two sets of gate terminal and auxiliary emitter terminal installed on the flat part And the metal conductor plate is installed on the upper surface of the two convex portions across the two convex portions. The first metal conductor plate is composed of a first metal conductor plate and a second metal conductor plate installed on the upper surface of any one of the two protrusions. Is connected to the main emitter terminal disposed on one of the two convex portions, and the other portion is disposed so as to be directly below the side surface of the other convex portion. The main emitter terminal installed on the convex part of the gate is connected to the gate driving substrate installed on the flat part, and the second metal conductor plate is partly installed on the other convex part The main emitter terminal connected to the main emitter terminal and installed on the flat portion by installing the main emitter terminal on the other convex portion by installing the other portion directly below the side surface of the other convex portion. characterized in that characterized in that it connects the gate drive substrate that is

  According to the present invention, the current detection accuracy can be improved by minimizing the inductance of the gate wiring.

It is a perspective view of a power converter. It is a side view of a power converter device. It is a front view of a power converter device. It is a circuit block diagram of a power converter device. It is a perspective view of another power converter device. It is a perspective view of the power converter device carrying a U-shaped metal conductor board. It is a block diagram which shows a general gate wiring.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

(1) Overall Configuration FIG. 1 shows a perspective configuration of the power conversion device according to the first embodiment. In particular, here, one phase of a two-level inverter provided with two 1 in 1 type power semiconductor modules in which one power semiconductor is mounted on one power semiconductor module is shown.

  The power converter includes an upper arm semiconductor module (IGBT module) 1 and a lower arm IGBT module 2. Since the upper arm IGBT module 1 has the same configuration as the lower arm IGBT module 2, the configuration of the lower arm IGBT module 2 will be particularly described below.

  The IGBT module 2 includes a plurality of main collector terminals 21, a plurality of main emitter terminals 22, a gate terminal 23, and an auxiliary emitter terminal 24. The IGBT module 2 is configured to have two convex portions, and the main collector terminal 21 is installed on the upper surface of one of the two convex portions. A main emitter terminal 22 is provided on the upper surface of the other convex portion.

  A gate terminal 23 and an auxiliary emitter terminal 24 are installed on a flat portion other than the convex portion on the upper surface of the IGBT module 2. Of these terminals 21 to 24, the main emitter terminal 22, the gate terminal 23, and the auxiliary emitter terminal 24 are connected to a gate drive substrate 25 that drives the IGBT module 2.

  The gate drive substrate 25 is directly connected to the gate terminal 23 and the auxiliary emitter terminal 24, and is connected to the plurality of main emitter terminals 22 through a metal conductor plate (emitter sense wiring plate) 26. That is, the emitter sense wiring board 26 connects the plurality of main emitter terminals 22 and the gate drive substrate 25.

  The emitter sense wiring board 26 is installed so as to cover the upper surface of the convex portion on which the main emitter terminal 22 is installed on the upper surface of the IGBT module 2, and directly below the flat portion along the side surface of the convex portion. It is installed so as to be connected to the gate drive substrate 25.

  In addition, the emitter sense wiring board 26 can reduce the inductance between the main emitter terminal 22 and the gate drive substrate 25 as the widths W1 and W2 are wider. Therefore, here, the emitter sense wiring board 26 has a width W1 that is equal to or larger than the installation width of the plurality of main emitter terminals 22 at the connection portion with the main emitter terminal 22, and is a portion directly below the flat portion along the side surface of the convex portion. Has a width W2 equal to or larger than the connection width with the gate drive substrate 25.

  The power converter includes the above-described units (21 to 26), a positive conductor plate 31 that connects a positive power source (not shown) and the main collector terminal 11, and the main emitter terminal 12 of the upper arm. An intermediate conductor plate 32 that connects the main collector terminal 21 of the lower arm and a negative conductor plate 33 that connects the negative power supply (not shown) and the main emitter terminal 22 are provided. Moreover, the cooling device 51 etc. which cool the alternating current output terminal 41 and the IGBT module 2 are provided.

  Each part (21-26) demonstrated above is a part regarding the IGBT module 2 of a lower arm, and is comprised similarly about the IGBT module 1 of an upper arm. For example, the configuration in which the main emitter terminal 22 and the gate drive substrate 25 are connected by the emitter sense wiring board 26 of the lower arm is the same in the upper arm. In the upper arm, the main emitter terminal 12 and the gate drive substrate 15 are connected by the emitter sense wiring board 16.

(2) Side Configuration FIG. 2 shows a side configuration of the power converter of FIG. As described above, the power conversion device includes two IGBT modules 1 and 2 of the upper arm and the lower arm on the cooling device 51. The main emitter terminals 12 and 22 installed on one of the two protrusions provided in the IGBT modules 1 and 2 are connected to the emitter sense wiring boards 16 and 26, respectively. The emitter sense wiring boards 16 and 26 are connected to gate drive substrates 15 and 25, respectively.

  Of the end portions of the negative conductor plate 33, a height adjusting portion 331 is provided on the lower surface of the end portion installed on the upper portion of the convex portion of the IGBT module 2. This height adjustment part 331 is comprised by the same member as the negative side conductor plate 33, and maintains the negative side conductor plate 33 horizontally.

(3) Front Configuration FIG. 3 shows a front configuration of the power conversion device of FIG. Here, the front configuration of the IGBT module 2 of the lower arm is particularly shown. When the IGBT module 2 is viewed from the front, a gap is provided between the main emitter terminal 22 and the package outer surface of the IGBT module 2. In FIG. 1 and FIG. 2, the gap is not shown for the sake of simplicity. Since the emitter sense wiring board 26 has a flat plate shape, it can be installed by being inserted into this gap.

(4) Circuit Configuration FIG. 4 shows a circuit configuration of the power converter. Although the IGBT module 2 and the peripheral circuit configuration will be described here, the same applies to the IGBT module 1 and the peripheral circuit configuration. The power conversion apparatus includes the gate driving substrate 25 and the IGBT module 2 described above and a control theory unit 61.

  The control theory unit 61 outputs an on / off signal S1 to the gate drive substrate 25. When the gate drive circuit 251 inside the gate drive substrate 25 receives the on / off signal S1 from the control theory unit 61, the gate drive circuit 251 converts the on / off signal S1 into an on / off signal S2 for the IGBT module 2, The off signal S2 is output to the IGBT module 2.

  When the on / off signal S2 from the gate drive circuit 251 is input to the gate terminal 23 in the IGBT module 2, the IGBT module 2 has a collector current between the main collector terminal 21 and the main emitter terminal 22 when turned on. Shed. When off, a power supply voltage (not shown) is applied between the main collector terminal 21 and the main emitter terminal.

  The auxiliary emitter terminal 24 in the IGBT module 2 is a terminal for flowing a current that flows when the on / off signal S2 is input to the gate terminal 23, and has the same potential as the main emitter terminal 22, but in the IGBT module 2, Is constituted by a terminal different from the main emitter terminal 22.

  In the IGBT module 2, since the main emitter terminal 22 and the auxiliary emitter terminal 24 are connected by the emitter sense wiring board 26, a parasitic wiring inductance Le is formed. The main emitter terminal 22 and the auxiliary emitter terminal 24 are connected to a current detection circuit 252 inside the gate drive substrate 25.

  The current detection circuit 252 detects the current flowing between the main collector terminal 21 and the main emitter terminal 22 by integrating the voltage generated in the wiring inductance Le, and uses the current information S3 obtained as the detection result as a short circuit determination circuit. Output to H.253.

  The short circuit determination circuit 253 determines normality or abnormality (short circuit) based on the current information S3, and determines that the current is abnormal when a large current is flowing such that the IGBT module 2 is destroyed. In this case, the short circuit determination circuit 253 outputs an off signal S4 for forcibly turning off the current flowing through the IGBT module 2 to the gate drive circuit 251. As a result, IGBT short circuit protection is realized.

  Here, the emitter sense wiring board 26 has a wide flat plate shape, and connects the IGBT module 2 and the gate drive substrate 25 through the shortest path. By forming the emitter sense wiring board 26 with a wide and shortest path, it is possible to minimize parasitic inductance and prevent noise from being superimposed.

  Therefore, it is possible to prevent problems such as stopping the operation of the inverter due to a short circuit due to erroneous detection of the current detection value, or continuing the operation of the inverter without determining the short circuit despite the short circuit. can do.

(5) Effects of the First Embodiment As described above, according to the power conversion device of the first embodiment, the plurality of main emitter terminals 12 and 22 installed in the IGBT modules 1 and 2, and the gate Since the drive substrates 15 and 25 are connected to each other by the emitter sense wiring boards 16 and 26 to minimize the inductance therebetween, erroneous detection can be prevented and current detection accuracy can be improved.

  The emitter sense wiring boards 16 and 26 are wide as long as they can maintain an insulating relationship with each other, and connect the main emitter terminals 12 and 22 and the gate drive substrates 15 and 25 through the shortest path, respectively. As a result, the inductance can be minimized. Therefore, erroneous detection can be prevented and current detection accuracy can be improved.

  In the first embodiment, the gate drive substrate 25 is described as a single substrate. However, the present invention is not limited to this, and for example, a substrate having a short-circuit protection function and a signal from the control theory unit 61 are received. The structure which made the board | substrate a separate board | substrate may be sufficient. In this case, only the substrate on which the short circuit protection function is mounted is disposed in the immediate vicinity of the IGBT modules 1 and 2, and the shortest path is provided between the substrate and the main emitter terminals 12 and 22 by the wide emitter sense wiring boards 16 and 26, respectively. Thus, the above-described effect that the current detection accuracy can be improved can be obtained.

  In the first embodiment, the configuration in which the two IGBT modules 1 and 2 are not connected in parallel has been described. However, the present invention is not limited to this. For example, a plurality of IGBT modules are connected in parallel, and these are integrated into one unit. The gate driving substrates may be connected. Even in this case, the above effect that the current detection accuracy can be improved can be obtained by using a plate-shaped emitter sense wiring board.

  In the first embodiment, the two-level inverter has been described as an example, but the present invention can also be applied to a multi-level inverter having three or more levels.

(6) Second Embodiment FIG. 5 shows a perspective configuration of a power converter according to a second embodiment. The power conversion device according to the second embodiment includes a 2-in-1 type power semiconductor module in which two power semiconductors of the upper and lower arms are mounted on one power semiconductor module, and the two power semiconductors of the upper and lower arms on one substrate. The second embodiment is different from the first embodiment in that a 2-in-1 type gate drive substrate is provided. Different configurations will be described below.

  The IGBT module 2A includes a main collector terminal 11A for the upper arm, a main emitter terminal 12A, a gate terminal 13A, and an auxiliary emitter terminal 14A, and a main collector terminal 21A, a main emitter terminal 22A, a gate terminal 23A, and an auxiliary emitter for the lower arm. A terminal 24A is provided.

  Of these terminals 11A to 14A and 21A to 24A, the main emitter terminals 12A and 22A, the gate terminals 13A and 23A, and the auxiliary emitter terminals 14A and 24A are each connected to a gate drive substrate 25A that drives the IGBT module 2A.

  The gate drive substrate 25A is composed of a single substrate for driving the upper arm and the lower arm, and is directly connected to the gate terminals 13A and 23A and the auxiliary emitter terminals 14A and 24A. The main emitter terminals 12A and 22A are connected via emitter sense wiring boards 16A and 26A. That is, the emitter sense wiring boards 16A and 26A connect the main emitter terminals 12A and 22A and the gate drive substrate 25A.

  The emitter sense wiring board 16A is installed so as to cover the upper surface of the convex portion on which the main emitter terminal 12A of the upper arm is installed, and directly below the flat portion along the side surface of the convex portion to the gate drive substrate 25A. Installed to be connected.

  The emitter sense wiring board 26A is installed so as to cover the upper surface of the convex part where the main emitter terminal 22A of the lower arm is installed, and extends to another convex part different from the convex part. It is installed so as to be directly connected to the gate drive substrate 25A along the side surface of the convex portion and directly below the flat portion.

  As the widths W3 and W4 of the emitter sense wiring boards 16A and 26A are wider, the inductance between the main emitter terminals 12A and 22A and the gate drive substrate 25A can be reduced. Therefore, here, the emitter sense wiring boards 16A and 26A have the maximum widths W3 and W4 in a range in which the insulation relationship can be maintained.

(7) Effects of the Second Embodiment As described above, according to the power conversion device of the second embodiment, the main emitter is provided even when the 2-in-1 type IGBT module 2A and the gate drive substrate 25A are provided. The terminals 12A and 22A and the gate drive substrate 25A can be connected by the emitter sense wiring boards 16A and 26A to minimize the inductance between them. Therefore, erroneous detection can be prevented and current detection accuracy can be improved.

  Although the 2in1 type IGBT module 2A is provided here, the present invention is not limited to this. For example, a 6in1 type IGBT module in which six arms are configured in one package may be provided. Even in this case, the inductance between the main emitter terminals and the gate drive substrate can be minimized by connecting them with the emitter wiring board. Therefore, erroneous detection can be prevented and current detection accuracy can be improved.

(8) Other Embodiments FIG. 6 shows a perspective configuration of a power converter according to another embodiment. This other power converter differs from the first embodiment in that the emitter sense wiring board 26B has a U shape. Since the emitter sense wiring board 26B has a U shape, the gap between the main emitter terminal 22 and the outer surface of the package of the power semiconductor module 2 even after the main emitter terminal 22 is installed in the power semiconductor module 2. The emitter sense wiring board 26B can be easily installed.

1, 2 Power semiconductor module (IGBT module)
11, 21 Main collector terminals 12, 22 Main emitter terminals 13, 23 Gate terminals 14, 24 Auxiliary emitter terminals 15, 25 Gate drive board 16, 26 Metal conductor plate (emitter sense wiring board)

Claims (2)

In a power converter for a railway vehicle comprising a power semiconductor module comprising a main emitter terminal, a gate terminal and an auxiliary emitter terminal, and a gate drive substrate connected to the power semiconductor module,
The power semiconductor module and the gate drive substrate are connected by a metal conductor plate,
The power semiconductor module includes two convex portions and a flat portion, each of the two convex portions includes the main emitter terminal, and the flat portion includes two sets of the gate terminal and the auxiliary emitter terminal,
The gate driving substrate is connected to the two sets of gate terminals and auxiliary emitter terminals installed on the flat part by being installed on the upper surface of the flat part,
The metal conductor plate is disposed on the upper surface of one of the two convex portions and the first metal conductive plate installed on the upper surface of the two convex portions across the two convex portions. A second metal conductor plate to be installed;
A part of the first metal conductor plate is connected to the main emitter terminal installed on one of the two convex parts, and the other part is along the side surface of the other convex part. Connecting the main emitter terminal installed on the one convex part by being installed directly below, and the gate driving substrate installed on the flat part,
The second metal conductor plate is installed such that a part thereof is connected to the main emitter terminal installed on the other convex part, and the other part is directly below the side surface of the other convex part. To connect the main emitter terminal installed on the other convex portion to the gate drive substrate installed on the flat portion. 2. The power converter according to claim 1 , wherein the first metal conductor plate and the second metal conductor plate have a maximum width within a range in which an insulating state is maintained.

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