JPS6277492A - Manufacture of electroformed die - Google Patents

Manufacture of electroformed die

Info

Publication number
JPS6277492A
JPS6277492A JP21821585A JP21821585A JPS6277492A JP S6277492 A JPS6277492 A JP S6277492A JP 21821585 A JP21821585 A JP 21821585A JP 21821585 A JP21821585 A JP 21821585A JP S6277492 A JPS6277492 A JP S6277492A
Authority
JP
Japan
Prior art keywords
mold
layer
electroforming
conductive film
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21821585A
Other languages
Japanese (ja)
Other versions
JPH0419314B2 (en
Inventor
Akio Inoue
井上 皓夫
Isao Kame
亀 伊佐男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HOKOKU JUSHI KOGYO KK
Original Assignee
HOKOKU JUSHI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HOKOKU JUSHI KOGYO KK filed Critical HOKOKU JUSHI KOGYO KK
Priority to JP21821585A priority Critical patent/JPS6277492A/en
Publication of JPS6277492A publication Critical patent/JPS6277492A/en
Publication of JPH0419314B2 publication Critical patent/JPH0419314B2/ja
Granted legal-status Critical Current

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  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

PURPOSE:To prevent the stripping of a strippable layer in an electroforming stage and to facilitate handling by forming an Al2O3 layer by ion plating as the strippable layer formed on the patterned surface of a matrix. CONSTITUTION:A strippable layer 9 is formed on the patterned surface of a matrix 8 having a fine uneven pattern, an electrically conductive film 10 is formed on the the layer 9 and electroforming is carried out to obtain a plated layer 11 formed integrally with the film 10. The film 10 and the layer 11 are then stripped from the matrix 8 to obtain a stamper die 12. The strippable layer 9 is an Al2O3 layer formed by ion plating.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は合成樹脂成型用金型等として用いられる電鋳金
型の製造方法の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a method for manufacturing an electroforming mold used as a synthetic resin molding mold or the like.

(従来の技術) 従来、精緻な模様の再現が要求される合成樹脂成型用金
型として電鋳金型が用いられている。そして、例えば虹
模様等の微細精緻な凹凸模様が形成された一枚の原盤を
基にして、該原盤の凹凸模様と凹凸の状態が反対の模様
を有する多数の電鋳金型(スタンパ金型)を得る手段が
知られている。
(Prior Art) Conventionally, electroforming molds have been used as synthetic resin molding molds that require reproduction of precise patterns. For example, based on a single master on which a fine and precise uneven pattern such as a rainbow pattern is formed, a large number of electroforming molds (stamper molds) having patterns whose unevenness is opposite to the uneven pattern of the master are created. There are known means to obtain .

すなわち、原盤の模様面の上に導電膜を形成(原盤の材
質によっては剥離層を介して導電膜を形成する場合があ
る)した後電鋳を行い、電鋳によって前記導電膜に一体
的に形成されたメッキ層を原盤より取外し、原盤の凹凸
模様と凹凸状態が反対の模様を有するマスク金型を得た
後、該マスク金型の模様面の上に剥離層を介して、マス
ク金型の形成と同様にして、マスク金型の凹凸模様と凹
凸1欠態が反対の模様(すなわち原盤の凹凸状態と一致
した模様)を有する複数個のマザー金型を得、更に各々
のマザー金型から同様の手段でマザー金型の凹凸模様と
凹凸状態が反対の模様(すなわちマスク金型の凹凸状態
と一致した模様)を有する複数1固のスタンパ金型を得
る。
That is, after forming a conductive film on the patterned surface of the master (depending on the material of the master, a conductive film may be formed through a release layer), electroforming is performed, and the conductive film is integrally formed by electroforming. After removing the formed plating layer from the master to obtain a mask mold having a pattern with an uneven pattern opposite to that of the master, the mask mold is placed on the patterned surface of the mask mold through a release layer. In the same manner as in the formation of the mask mold, a plurality of mother molds having a pattern in which the uneven pattern of the mask mold is opposite to the uneven pattern (i.e., a pattern that matches the uneven state of the master) are obtained, and each mother mold is further formed. Then, by the same means, a plurality of stamper molds each having a pattern having an uneven state opposite to that of the mother mold (that is, a pattern matching the uneven state of the mask mold) are obtained.

この場合、原盤とマスク金型との関係では原盤が母型で
ありマスク金型が子型である。同様にしてマスタ金型と
マザー金型との関係では前者が母型、後者が子型であり
、マザー金型とスクンパ金型との関係についても同様で
ある。
In this case, in the relationship between the master and the mask mold, the master is the mother mold and the mask mold is the child mold. Similarly, the relationship between the master mold and the mother mold is such that the former is the mother mold and the latter is the child mold, and the same holds true for the relationship between the mother mold and the skumper mold.

(発明が解決しようとする問題点) 叙上の電鋳金型の製造方法において、剥離層としては母
型をクロム酸ナトリウムや硫化ナトリウム液等に浸漬し
て母型の表面に形成されたクロメート皮膜や硫化物皮膜
等を用いている。
(Problems to be Solved by the Invention) In the electroforming mold manufacturing method described above, the release layer is a chromate film formed on the surface of the matrix by immersing the matrix in sodium chromate, sodium sulfide solution, etc. or sulfide film.

しかしながら、かかる化学的に形成された皮膜は不純物
が混入し易く、母型とその上に形成される導電膜との絶
縁性に問題があるので、剥m層の形成に際し母型の微細
な模様が犯される場合があり、また皮膜の厚さが不安定
でそのコントロールに熟練を要し、更に前記皮膜は極め
てカ危弱であるので皮膜形成後の水洗等の作業に慎重を
要し、また電鋳途中で剥離したりして作業性に劣るとい
う問題があった。
However, such chemically formed films are easily contaminated with impurities and have problems with the insulation between the matrix and the conductive film formed thereon. In addition, the thickness of the film is unstable and requires skill to control.Furthermore, the film is extremely fragile, so care must be taken when washing with water after the film is formed. There was a problem that the workability was poor due to peeling during electroforming.

本発明はかかる問題に鑑みなされたもので、母型の上に
剥離層を容易に形成することができ、しかも絶縁性に優
れかつ強度的にも問題のない剥離層の形成手段を提供す
ることを目的とする。
The present invention has been made in view of such problems, and an object of the present invention is to provide a means for forming a release layer that can easily form a release layer on a matrix, has excellent insulation properties, and is free from problems in terms of strength. With the goal.

(問題点を解決するための手段) 上記目的を達成するために講じられた本発明の電鋳金型
の製造方法の特徴とするところは、剥離層としてイオン
プレーティングによって形成されたへρ、01層を用い
る点にある。
(Means for Solving the Problems) The method for manufacturing an electroforming mold of the present invention, which was taken to achieve the above object, is characterized by the fact that the peeling layer is formed by ion plating. The point lies in the use of layers.

(実施例) 以下、微細な凹凸模様が形成された一枚の原盤から多数
のスクンパ金型を製造する場合の実施例につき本発明を
詳述する。
(Example) Hereinafter, the present invention will be described in detail with reference to an example in which a large number of Sumpah molds are manufactured from a single master disk on which a fine uneven pattern is formed.

本実施例に用いる原盤としては、虹模様のような深さ0
.1μm程度の凸部が数μmの間隔で6設された凹凸模
様が形成されたプラスチックフィルムやガラス板、ガラ
ス原板に塗布されたフォトレジスト膜にレーザ光で緻密
な線画を照射し未露光部を除去して微細凹凸模様とした
ホログラフ原盤等の非導電性の原盤を用いる。また、原
盤の模様としては、かかる微細な模様の上にスクリーン
印刷等により適宜の模様を重合して形成したものであっ
てもよいことは勿論である。
The master disk used in this example has a rainbow pattern with a depth of 0.
.. A plastic film, glass plate, or a photoresist film coated on a glass original plate is coated with a concave-convex pattern in which six protrusions of about 1 μm are spaced at intervals of several μm, and the unexposed areas are irradiated with a precise line drawing using a laser beam. A non-conductive master disc such as a holographic master disc which has been removed to form a fine uneven pattern is used. It goes without saying that the pattern on the master disc may be formed by superimposing a suitable pattern on such a fine pattern by screen printing or the like.

まず、第1図のように、原盤1の上に導電膜2を形成す
る。導電膜2は次工程の電鋳によりメッキ層を一体的に
形成するために必要であり1通常Ni又はCuを用いて
真空蒸着、スパッタ、イオンプレーティング蒸着等によ
って形成される。イオンプレーティングにより形成した
ものが電鋳途中において剥離もなく好適である。導電膜
2の膜厚は通常0.04〜1μ謡とされる。
First, as shown in FIG. 1, a conductive film 2 is formed on a master 1. The conductive film 2 is necessary for integrally forming a plating layer by electroforming in the next step, and is usually formed using Ni or Cu by vacuum evaporation, sputtering, ion plating evaporation, or the like. One formed by ion plating is preferable because it does not peel off during electroforming. The thickness of the conductive film 2 is usually 0.04 to 1 μm.

導電膜2の形成後、すみやかに電解メッキ治具に取り付
は電鋳を開始し、第2図のように導電膜2と一体的にメ
ッキr53を形成する。電鋳は、導電膜2の材質に合せ
てニッケルメッキ、銅メッキを適用する。メッキ層3の
厚さは導電膜2を十分補強でき機械的に取り扱うことの
できる厚さとし、200 μm程度で十分である。尤も
、これより厚くしてもよいことは勿論である。尚、この
程度のメッキ厚を得るのに、ニッケルメッキの場合0.
5〜5 A/dm2の電流密度で35〜3.5時間、銅
メッキの場合1〜5A/d1112の電流密度で24〜
4.5時間要する。
After the conductive film 2 is formed, it is immediately attached to an electrolytic plating jig and electroforming is started to form a plating r53 integrally with the conductive film 2 as shown in FIG. For electroforming, nickel plating or copper plating is applied depending on the material of the conductive film 2. The thickness of the plating layer 3 is such that it can sufficiently reinforce the conductive film 2 and can be handled mechanically, and a thickness of about 200 μm is sufficient. Of course, it may be made thicker than this. In order to obtain this level of plating thickness, in the case of nickel plating, 0.
35-3.5 hours at a current density of 5-5 A/dm2, 24-3.5 hours at a current density of 1-5 A/dm2 for copper plating
It takes 4.5 hours.

電鋳終了後、治具より導電膜2およびメッキ層3が形成
された原盤1を取外し、水洗乾燥後機械的に導電膜2に
メッキrii3が一体的に形成された電鋳板を原盤1よ
り剥離しマスク金型4を得る。
After electroforming is completed, the master 1 on which the conductive film 2 and the plating layer 3 are formed is removed from the jig, and after washing and drying, the electroformed plate on which the conductive film 2 and the plating rii3 are integrally formed is mechanically removed from the master 1. A mask mold 4 is obtained by peeling.

マスク金型4の厚さが200μm程度のときは補強のた
めにマスク金型4の裏面に数mm厚程度のガラス板を接
着しておけばよい。
When the thickness of the mask mold 4 is about 200 μm, a glass plate with a thickness of about several mm may be bonded to the back surface of the mask mold 4 for reinforcement.

また、原盤としてホログラフ原盤を用いる場合、剥離の
際、レジスト膜がマスク金型に付着するため、アルコー
ル等の有機溶剤でレジスト膜を熔解除去する必要がある
。また、ガラス原盤を用いる場合、原盤の模様面にまず
後述の剥離層を設は次に導電膜を形成するのがよい。該
剥離層は原盤の保護層としての役目を果すものである。
Further, when a holographic master is used as the master, the resist film adheres to the mask mold during peeling, so it is necessary to melt and remove the resist film with an organic solvent such as alcohol. Further, when a glass master is used, it is preferable to first provide a release layer, which will be described later, on the patterned surface of the master, and then form a conductive film. The release layer serves as a protective layer for the master.

次に、第3図のように、マスク金型4の模様面にイオン
プレーティングによりへ犯、0!の剥+is層5を形成
し、その上に導電膜6を形成した後、電鋳により前記導
電膜6に一体的にメッキ層7を形成する。この導電膜6
およびメッキ層7からなる電鋳板は、マスク金型4の上
に形成された剥離層5の導電膜6例の界面から剥離され
てマザー金型8になる。導電膜6およびメ・7キ層7は
マスク金型4を製作した場合と同様の手段で形成される
Next, as shown in Figure 3, the patterned surface of the mask mold 4 is ion plated to cause 0 damage! After forming the peeled + IS layer 5 and forming a conductive film 6 thereon, a plating layer 7 is integrally formed on the conductive film 6 by electroforming. This conductive film 6
The electroformed plate composed of the plating layer 7 is peeled off from the interface of the conductive film 6 of the peeling layer 5 formed on the mask mold 4 to become the mother mold 8. The conductive film 6 and the metal layer 7 are formed by the same means as in the case of manufacturing the mask mold 4.

剥離[5はマスク金型4の微細な模様をマザー金型Bに
正確に写し取るには薄いほどよいが、絶縁性および強度
が確保されなければならない。ピンホールの発生や不純
物の混入により絶縁性が損われると、マスク金型4とマ
ザー金型8とが部分的に融着し、剥離が困難になるばか
りかマタス金型4の模様面が損傷するということになる
。また、強度が不足すると、取り扱いが困難になり、長
時間の電鋳過程で剥離が生じるようになる。
The thinner the peeling [5] is, the better in order to accurately copy the fine pattern of the mask mold 4 onto the mother mold B, but insulation and strength must be ensured. If the insulation is impaired due to the occurrence of pinholes or the incorporation of impurities, the mask mold 4 and the mother mold 8 will be partially fused together, which will not only make it difficult to separate, but also damage the patterned surface of the matas mold 4. That means doing so. In addition, if the strength is insufficient, handling becomes difficult and peeling occurs during a long electroforming process.

本発明においては、剥ill N 5はaj2.O!層
をイオンプレーティングにより形成するので、0.04
μm程度の緻密で強度に優れた薄膜を容易に形成するこ
とができ、しかもこの薄膜は高純度故に絶縁性に優れて
おり、剥離層として好適なものである。
In the present invention, peeling ill N5 is aj2. O! Since the layer is formed by ion plating, 0.04
It is possible to easily form a thin film with a density on the order of μm and excellent strength, and this thin film has excellent insulation properties due to its high purity, and is suitable as a release layer.

尚、剥離層の厚さの上限は0.2μmで十分である。Note that an upper limit of the thickness of the release layer is 0.2 μm.

剥離層5はアルミニウムイオンプレーティングした後、
wi、素ガスを導入し、酸素放電によりアルミニウム層
を酸化してAR,ot層として得られる。
After the peeling layer 5 is aluminum ion plated,
Wi, elemental gas is introduced, and the aluminum layer is oxidized by oxygen discharge to obtain an AR, ot layer.

また、アルミニウムイオンプレーティングにおいて、は
じめから酸素ガスを導入しておき、酸素放電の中でアル
ミニウムの蒸着を行い、蒸着膜をAρi01層としても
よい。
Furthermore, in aluminum ion plating, oxygen gas may be introduced from the beginning, and aluminum may be vapor-deposited in oxygen discharge to form the vapor-deposited film as the Aρi01 layer.

アルミニウム層を形成した後酸化処理をする場合、アル
ミニウム層を全部酸化せずに、模様面に臨接した部分を
アルミニウムのままにしておくと、模様面の保護に役立
つ。すなわち、マザー金型8をマスク金型4から剥離す
るとき、マザー金型8側に剥離層が部分的に付着してマ
スク金型4の模様面が損傷することがあるが、アルミニ
ウム層で模様面が被覆されておれば、損傷が模様面まで
及ぶことがない。マスク金型4から多数のマザー金型8
を製作することを考えれば、マスク金型4の模様に損傷
がないことは重要である。かかる2層構造の剥離層は、
了ルミニウムイオンプレーティングの蒸着途中より酸素
ガスを導入し、アルミニウムの蒸発中に酸化アルミニウ
ムとし、アルミニウム・ AρaO*Iilとして得る
こともできる。
When performing an oxidation treatment after forming an aluminum layer, it is helpful to protect the pattern surface if the aluminum layer is left in contact with the pattern surface without oxidizing the entire aluminum layer. That is, when the mother mold 8 is peeled off from the mask mold 4, the peeling layer may partially adhere to the mother mold 8 side and the patterned surface of the mask mold 4 may be damaged. If the surface is coated, damage will not extend to the pattern surface. A large number of mother molds 8 from the mask mold 4
Considering that the mask mold 4 is manufactured, it is important that the pattern of the mask mold 4 is not damaged. The release layer of such a two-layer structure is
It is also possible to introduce oxygen gas during the vapor deposition of aluminum ion plating and convert it into aluminum oxide during evaporation of aluminum, thereby obtaining aluminum AρaO*Iil.

尚、マスク金型4から多数のマザー金型8を製作する場
合、マスク金型4の模様面に形成された剥離層5は毎回
完全に除去して、再び新たな剥離層を形成した方がマス
ク金型4に忠実な電鋳が行える。既述の通り、マスク金
型4からマザー金型8を剥離するとき、マスク金型4に
形成された剥m rii5に損傷が生じている場合があ
るからである。
When manufacturing a large number of mother molds 8 from the mask mold 4, it is better to completely remove the release layer 5 formed on the patterned surface of the mask mold 4 each time and form a new release layer again. Electroforming can be performed faithfully to the mask mold 4. This is because, as described above, when the mother mold 8 is peeled off from the mask mold 4, the peeled part 5 formed on the mask mold 4 may be damaged.

以上のようにして得られたマザー金型8の模様面に、第
4図のように、剥離層9を形成した後、導電膜10を形
成して電鋳を行い、導電膜10に一体的に形成されたメ
ッキ1illを得る。そして、第5図のように、導電膜
10およびメッキN11をマザー金型8から剥離して、
マスク金型4と同様の凹凸模様を有するスタンパ金型1
2を得る。この場合、剥M1i9、導電膜10、メッキ
1illは既述の通り形成される。また、多数のスタン
パ金型12を得る方法についても、多数のマザー金型8
を得る場合と同様である。
As shown in FIG. 4, a release layer 9 is formed on the patterned surface of the mother mold 8 obtained as described above, and then a conductive film 10 is formed and electroformed to form an integral part of the conductive film 10. 1ill of plating is obtained. Then, as shown in FIG. 5, the conductive film 10 and the plating N11 are peeled off from the mother mold 8.
Stamper mold 1 having the same uneven pattern as mask mold 4
Get 2. In this case, the stripping M1i9, the conductive film 10, and the plating 1ill are formed as described above. Also, regarding the method of obtaining a large number of stamper molds 12, a large number of mother molds 8
The same is true for obtaining .

スタンパ金型12は、模様と反対側の面をメッキ時の厚
さのバラツキをなくすために平面gF磨され、適宜寸法
にカッティングして樹脂成型用金型に装着される。
The surface of the stamper mold 12 opposite to the pattern is flat-face polished to eliminate variations in thickness during plating, cut to an appropriate size, and mounted in a resin molding mold.

このように、一枚の原盤1からマスク金型4、マザー金
型8を作成し、それぞれ何度でも繰り返し電鋳すること
で何枚ものスタンパ金型12を製作することができる。
In this way, a mask mold 4 and a mother mold 8 are created from a single master 1, and a number of stamper molds 12 can be manufactured by repeatedly electroforming each of them.

次に虹模様が形成されたPET(ポリエチレンテレフタ
レート)フィルムを原盤として多数のスタンパ金型を得
る場合の具体的実施例について説明する。
Next, a specific example will be described in which a large number of stamper molds are obtained using a PET (polyethylene terephthalate) film on which a rainbow pattern is formed as a master.

(11高さ0.1 μmの凸部(凸部のピンチ1〜1.
8μm)によって形成された虹模様を有する、厚さ50
μ箱のPETフィルムを150 X 150 tmに切
断して有機溶剤で洗浄した。その後、スクリーン印刷に
より、PETフィルムの模様面上にマーク、文字、図形
等を印刷し乾燥した。
(11 Convex portion with a height of 0.1 μm (pinch of the convex portion 1 to 1.
8 μm), with a rainbow pattern formed by
The μ-box PET film was cut into 150×150 tm pieces and washed with an organic solvent. Thereafter, marks, letters, figures, etc. were printed on the patterned surface of the PET film by screen printing and dried.

(2)次に、PETフィルムの模様面に高周波励起式イ
オンプレーティングによってニッケル又は銅の導電膜を
形成した。
(2) Next, a conductive film of nickel or copper was formed on the patterned surface of the PET film by high frequency excited ion plating.

・イオンプレーティング条件 到達真空度   5 X 10−’ Torrアルゴン
圧力  3 X 10−’Torr高周波電力   1
00W 膜  厚    0.044m  0.06μm  O
,1/jm蒸発方法 ニッケル 電子ビーム蒸着 銅   抵抗加熱方式 (3)導電膜形成後速やかに電解治具に取り付はニッケ
ル°メッキ又は銅メッキにより電鋳を開始した。
・Ion plating condition achieved vacuum degree 5 X 10-' Torr Argon pressure 3 X 10-' Torr High frequency power 1
00W Film thickness 0.044m 0.06μm O
, 1/jm Evaporation method Nickel Electron beam evaporation copper Resistance heating method (3) Immediately after the conductive film was formed, it was attached to an electrolytic jig and electroforming was started using nickel plating or copper plating.

(4)  メッキ層の厚さが200 μmになったとこ
ろで電鋳を終了し、治具より取り外し、水洗乾燥後、ピ
ンセットでPETフィルムより電鋳板のみを剥離し、マ
スク金型を得た。
(4) Electroforming was completed when the thickness of the plating layer reached 200 μm, and it was removed from the jig, washed with water, dried, and then only the electroformed plate was peeled off from the PET film with tweezers to obtain a mask mold.

(5)マスク金型の裏面に2鶴厚のガラス板をエポキシ
接着剤により接着し補強した後、マスク金型の模様面に
、0.1 μmのアルミニウム層をイオンプレーティン
グにより形成し、つづいてイオンプレーティング装置に
酸素ガスを導入して酸素放電によりアルミニウム表面を
酸化し剥離層とした。イオンプレーティング条件等は下
記の通りである。
(5) After adhering and reinforcing a glass plate with a thickness of 2 cranes to the back of the mask mold using epoxy adhesive, a 0.1 μm aluminum layer is formed on the patterned surface of the mask mold by ion plating, and then Oxygen gas was introduced into the ion plating apparatus, and the aluminum surface was oxidized by oxygen discharge to form a release layer. Ion plating conditions etc. are as follows.

・アルミイオンプレーティング条件 到達真空度   5 X 1O−5Torrボンバ一ド
時アルゴン圧力 5 X 10−’Torr蒸着時アル
ゴン圧力    3 X 10−’Torr高周波電力
        100W ボンバード時間      lO分 蒸発方式         抵抗加熱方式・酸化処理条
件 酸素圧力         5 X 10−’Torr
高周波電力        100 W酸化時間   
      20  分(6)剥離層形成後、その上に
導電膜をイオンプレーティングにより蒸着形成した。イ
オンプレーティング条件は(2)と同様である。
・Achieved vacuum level for aluminum ion plating 5 X 10-5 Torr Argon pressure during bombardment 5 X 10-' Torr Argon pressure during evaporation 3 X 10-' Torr High frequency power 100 W Bombardment time 1O minute evaporation method Resistance heating method/Oxidation Processing conditions Oxygen pressure 5 x 10-'Torr
High frequency power 100W Oxidation time
After forming the release layer for 20 minutes (6), a conductive film was deposited thereon by ion plating. The ion plating conditions are the same as in (2).

(7)導電膜形成後速やかにメッキ治具に取り付はメッ
キ層が200μmになるまで電鋳を行った。
(7) Immediately after forming the conductive film, it was attached to a plating jig and electroforming was performed until the plating layer reached 200 μm.

(8)電鋳終了後、治具より取外し、水洗乾燥後ピンセ
ットでマスク金型から導電膜に一体的に形成されたメッ
キW1(電鋳板)を剥離した。この際、剥離層はマスク
金型側に完全に残り、電鋳板のみが剥離し、マザー金型
が得られた。
(8) After electroforming, it was removed from the jig, washed with water, dried, and then the plating W1 (electroformed plate) integrally formed on the conductive film was peeled off from the mask mold using tweezers. At this time, the peeling layer remained completely on the mask mold side, and only the electroformed plate was peeled off, yielding a mother mold.

(9)マザー金型を母型として、上記(5)〜(8)の
行程を同様に行って、スタンパ金型を得た。
(9) Using the mother mold as the mother mold, steps (5) to (8) above were performed in the same manner to obtain a stamper mold.

QO)  同一のマザー金型から再度スタンパ金型を得
るに際して、マザー金型に残留した剥離層を毎回20%
水酸化ナトリウム水溶液で熔解除去して、新たな剥1i
!ttFiを形成して(6)〜(8)の行程を行った。
QO) When obtaining a stamper mold from the same mother mold again, remove the peeling layer remaining on the mother mold by 20% each time.
Dissolve and remove with sodium hydroxide aqueous solution to create a new peel 1i
! ttFi was formed and steps (6) to (8) were performed.

叙上のようにして、一枚の虹模様が形成されたPETフ
ィルム原盤から多数のスタンパ金型が得られたが、剥離
層は極めて良質なもの故母型の模様が犯されることな(
、すべてのスタンパ金型は極めて明瞭な凹凸模様が形成
された。
As described above, a large number of stamper molds were obtained from a PET film master on which a single rainbow pattern was formed, but since the release layer was of extremely high quality, the pattern of the matrix was not damaged (
, all stamper molds formed extremely clear uneven patterns.

(発明の効果) 以上説明した通り、本発明によれば、母型の模様面に形
成される剥離層をイオンプレーティングによって形成さ
れたA Qz Ch Nを用いるので、緻密で強度に優
れた薄膜を容易に形成することができ、Wi後の電鋳過
程で剥離することがなく取扱いが容易になる。また、高
純度のA9.tCh層を容易に形成できるので、薄膜で
あっても絶縁性に優れ、母型の模様面が電鋳過程で犯さ
れることがなく、子型の再現性に優れる。
(Effects of the Invention) As explained above, according to the present invention, A Qz Ch N formed by ion plating is used for the release layer formed on the patterned surface of the matrix, so a thin film that is dense and has excellent strength can be obtained. can be easily formed, and it does not peel off during the electroforming process after Wi, making it easy to handle. In addition, high purity A9. Since the tCh layer can be easily formed, it has excellent insulation even if it is a thin film, the patterned surface of the master mold is not damaged during the electroforming process, and the reproducibility of the child mold is excellent.

このように本発明の電鋳金型の製造方法は、強度および
絶縁性に優れた剥離層を容易に形成でき、工業上の利用
価値は著大である。
As described above, the electroforming mold manufacturing method of the present invention can easily form a release layer with excellent strength and insulation properties, and has great industrial utility value.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第5図は実施例の製造行程の説明図であり、第
1図は原盤に導電膜が形成された状態を示す断面説明図
、第2図はマスク金型の形成状態を示す断面説明図、第
3図はマザー金型の形成状態を示す断面説明図、第4図
はスタンパ金型の形成状態を示す断面説明図、第5図は
スタンバ金型の断面図である。 1・・・原盤、2,6.10・・・導電膜、3,7.1
1・・・メッキ層、4・・・マスク金型、5.9・・・
剥離層、8・・・マザー金型、12・・・スタンバ金型
。 特 許 出 願 人 豊国樹脂工業株式会社第7図 第3図 第2図 第4図
Figures 1 to 5 are explanatory diagrams of the manufacturing process of the example. Figure 1 is a cross-sectional diagram showing a state in which a conductive film is formed on a master, and Figure 2 is a diagram showing a state in which a mask mold is formed. FIG. 3 is an explanatory cross-sectional view showing the state of formation of the mother mold, FIG. 4 is an explanatory cross-sectional view showing the state of formation of the stamper mold, and FIG. 5 is a cross-sectional view of the standby mold. 1... Master disc, 2,6.10... Conductive film, 3,7.1
1... Plating layer, 4... Mask mold, 5.9...
Peeling layer, 8... Mother mold, 12... Standby mold. Patent applicant Toyokuni Jushi Kogyo Co., Ltd. Figure 7 Figure 3 Figure 2 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 1、微細な凹凸模様が形成された母型の模様面の上に剥
離層を形成し、該剥離層の上に導電膜を形成した後、電
鋳によって導電膜の上にメッキ層を形成し、前記導電膜
と一体化されたメッキ層を母型から取外して母型の凹凸
模様と凹凸状態が反対の模様を有する子型を得る電鋳金
型の製造方法において、前記剥離層としてイオンプレー
ティングによって形成されたAl_2O_3層を用いる
ことを特徴とする電鋳金型の製造方法。
1. Form a release layer on the patterned surface of the master mold on which a fine uneven pattern is formed, form a conductive film on the release layer, and then form a plating layer on the conductive film by electroforming. , a method for manufacturing an electroforming mold in which a plating layer integrated with the conductive film is removed from the mother mold to obtain a child mold having a pattern having an uneven state opposite to that of the mother mold, wherein ion plating is used as the peeling layer. A method for manufacturing an electroforming mold, characterized by using an Al_2O_3 layer formed by.
JP21821585A 1985-09-30 1985-09-30 Manufacture of electroformed die Granted JPS6277492A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21821585A JPS6277492A (en) 1985-09-30 1985-09-30 Manufacture of electroformed die

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21821585A JPS6277492A (en) 1985-09-30 1985-09-30 Manufacture of electroformed die

Publications (2)

Publication Number Publication Date
JPS6277492A true JPS6277492A (en) 1987-04-09
JPH0419314B2 JPH0419314B2 (en) 1992-03-30

Family

ID=16716418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21821585A Granted JPS6277492A (en) 1985-09-30 1985-09-30 Manufacture of electroformed die

Country Status (1)

Country Link
JP (1) JPS6277492A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01246391A (en) * 1988-03-29 1989-10-02 Ricoh Co Ltd Production of stamper

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542179A (en) * 1977-06-08 1979-01-09 Toshiba Corp Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542179A (en) * 1977-06-08 1979-01-09 Toshiba Corp Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01246391A (en) * 1988-03-29 1989-10-02 Ricoh Co Ltd Production of stamper

Also Published As

Publication number Publication date
JPH0419314B2 (en) 1992-03-30

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