JPH0419314B2 - - Google Patents
Info
- Publication number
- JPH0419314B2 JPH0419314B2 JP60218215A JP21821585A JPH0419314B2 JP H0419314 B2 JPH0419314 B2 JP H0419314B2 JP 60218215 A JP60218215 A JP 60218215A JP 21821585 A JP21821585 A JP 21821585A JP H0419314 B2 JPH0419314 B2 JP H0419314B2
- Authority
- JP
- Japan
- Prior art keywords
- mold
- layer
- master
- pattern
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007747 plating Methods 0.000 claims description 27
- 238000005323 electroforming Methods 0.000 claims description 26
- 238000007733 ion plating Methods 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 76
- 239000010408 film Substances 0.000 description 41
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000009413 insulation Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229920002799 BoPET Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical group [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- PXLIDIMHPNPGMH-UHFFFAOYSA-N sodium chromate Chemical compound [Na+].[Na+].[O-][Cr]([O-])(=O)=O PXLIDIMHPNPGMH-UHFFFAOYSA-N 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は合成樹脂成型用金型等として用いられ
る電鋳金型の製造方法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a method for manufacturing an electroforming mold used as a synthetic resin molding mold or the like.
(従来の技術)
従来、精緻な模様の再現が要求される合成樹脂
成型用金型として電鋳金型が用いられている。そ
して、例えば虹模様等の微細精緻な凹凸模様が形
成された一枚の原盤を基にして、該原盤の凹凸模
様と凹凸の状態が反対の模様を有する多数の電鋳
金型(スタンパ金型)を得る手段が知られてい
る。(Prior Art) Conventionally, electroforming molds have been used as synthetic resin molding molds that require reproduction of precise patterns. For example, based on a single master on which a fine and precise uneven pattern such as a rainbow pattern is formed, a large number of electroforming molds (stamper molds) having patterns whose unevenness is opposite to the uneven pattern of the master are created. There are known means to obtain .
すなわち、原盤の模様面の上に導電膜を形成
(原盤の材質によつては絶縁性剥離層(以下、単
に剥離層と記す。)を介して導電膜を形成する場
合がある)した後電鋳を行い、電鋳によつて前記
導電膜に一体的に形成されたメツキ層を原盤より
取外し、原盤の凹凸模様と凹凸状態が反対の模様
を有するマスタ金型を得た後、該マスタ金型の模
様面の上に剥離層を介して、マスタ金型の形成と
同様にして、マスタ金型の凹凸模様と凹凸状態が
反対の模様(すなわち原盤の凹凸状態と一致した
模様)を有する複数個のマザー金型を得、更に
各々マザー金型から同様の手段でマザー金型の凹
凸模様と凹凸状態が反対の模様(すなわちマスタ
金型の凹凸状態と一致した模様)を有する複数個
のスタンパ金型を得る。 That is, after forming a conductive film on the patterned surface of the master (depending on the material of the master, the conductive film may be formed via an insulating peeling layer (hereinafter simply referred to as a peeling layer)). After performing casting and removing the plating layer integrally formed on the conductive film by electroforming from the master mold to obtain a master mold having an uneven pattern opposite to that of the master mold, the master mold is A plurality of molds having a pattern having an uneven pattern opposite to that of the master mold (that is, a pattern that matches the uneven state of the master) are placed on the patterned surface of the mold via a release layer in the same manner as in the formation of the master mold. Further, from each mother mold, a plurality of stampers having a pattern whose uneven state is opposite to that of the mother mold (that is, a pattern that matches the uneven state of the master mold) are obtained from each mother mold by the same method. Get the mold.
この場合、原盤とマスタ金型との関係では原盤
が母型でありマスタ金型が子型である。同様にし
てマスタ金型とマザー金型との関係では前者が母
型、後者が子型であり、マザー金型とスタンパ金
型との関係についても同様である。 In this case, in the relationship between the master mold and the master mold, the master mold is the mother mold and the master mold is the child mold. Similarly, in the relationship between the master mold and the mother mold, the former is the mother mold and the latter is the child mold, and the same holds true for the relationship between the mother mold and the stamper mold.
(発明が解決しようとする問題点)
叙上の電鋳金型の製造方法において、剥離層と
しては母型をクロム酸ナトリウムや硫化ナトリウ
ム液等に浸漬して母型の表面に形成されたクロメ
ート皮膜や硫化物皮膜等を用いている。(Problems to be Solved by the Invention) In the electroforming mold manufacturing method described above, the release layer is a chromate film formed on the surface of the matrix by immersing the matrix in sodium chromate, sodium sulfide solution, etc. or sulfide film.
しかしながら、かかる化学的に形成された皮膜
は不純物が混入し易く、母型とその上に形成され
る導電膜との絶縁性に問題があるので、剥離層の
形成に際し母型の微細な模様が犯される場合があ
り、また皮膜の厚さが不安定でそのコントロール
に熟練を要し、更に前記皮膜は極めて脆弱である
ので皮膜形成後の水洗等の作業に慎重を要し、ま
た電鋳途中で剥離したりして作業性に劣るという
問題があつた。 However, such chemically formed films are easily contaminated with impurities, and there are problems with the insulation between the matrix and the conductive film formed thereon. In addition, the thickness of the film is unstable and requires skill to control.Furthermore, the film is extremely fragile, so care must be taken when washing with water after the film is formed, and during electroforming. There was a problem that the workability was poor due to peeling.
本発明はかかる問題に鑑みなされたもので、母
型の上に剥離層を容易に形成することができ、し
かも絶縁性に優れかつ強度的にも問題のない剥離
層の形成手段を提供することを目的とする。 The present invention has been made in view of such problems, and an object of the present invention is to provide a means for forming a release layer that can easily form a release layer on a matrix, has excellent insulation properties, and is free from problems in terms of strength. With the goal.
(問題点を解決するための手段)
上記目的を達成するために構じられた本発明の
電鋳金型の製造方法の特徴とするところは、剥離
層としてイオンプレーテイングによつて母型の模
様面の上にAl層を介して酸化Al層が形成され、
かつ全体厚さが0.2μm以下のものを用いる
(実施例)
以下、微細な凹凸模様が形成された一枚お原盤
から多数のスタンパ金型を製造する場合の実施例
につき本発明を詳述する。(Means for Solving the Problems) The method for manufacturing an electroforming mold of the present invention designed to achieve the above object is characterized by forming a pattern on the matrix by ion plating as a release layer. An oxidized Al layer is formed on the surface via an Al layer,
and the total thickness is 0.2 μm or less (Example) The present invention will be described in detail below with reference to an example in which a large number of stamper molds are manufactured from a single master plate on which a fine uneven pattern is formed. .
本実施例に用いる原盤としては、虹模様のよう
な深さ0.1μm程度の凸部が数μmの間隔で凸設さ
れた凹凸模様が形成されたプラスチツクフイルム
やガラス板、ガラス原板に塗布されたフオトレジ
スト膜にレーザ光で緻密な線画を照射し未露光部
を除去して微細凹凸模様としたホログラフ原盤等
の非導電性の原盤を用いる。また、原盤の模様と
しては、かかる微細な模様の上にスクリーン印刷
等により適宜の模様を重合して形成したものであ
つてもよいことは勿論である。 The master used in this example is a plastic film, a glass plate, or a glass plate coated with a concave-convex pattern in which protrusions with a depth of about 0.1 μm are formed at intervals of several μm, such as a rainbow pattern. A non-conductive master, such as a holographic master, is used, which is made by irradiating a photoresist film with a precise line drawing using a laser beam and removing the unexposed areas to create a fine uneven pattern. It goes without saying that the pattern on the master disc may be formed by superimposing a suitable pattern on such a fine pattern by screen printing or the like.
まず、第1図のように、原盤1の上に導電膜2
を形成する。導電膜2は次工程の電鋳によりメツ
キ層を一体的に形成するために必要であり、通常
Ni又はCuを用いて真空蒸着、スパツタ、イオン
プレーテイング蒸着等によつて形成される。イオ
ンプレーテイングにより形成したものが電鋳途中
において剥離もなく好適である。導電膜2の膜厚
は通常0.04〜1μmとされる。 First, as shown in FIG. 1, a conductive film 2 is placed on a master 1.
form. The conductive film 2 is necessary to integrally form the plating layer in the next step of electroforming, and is usually
It is formed using Ni or Cu by vacuum evaporation, sputtering, ion plating evaporation, etc. A material formed by ion plating is preferable because it does not peel off during electroforming. The thickness of the conductive film 2 is usually 0.04 to 1 μm.
導電膜2の形成後、すみやかに電解メツキ治具
に取り付け電鋳を開始し、第2図のように導電膜
2と一体的にメツキ層3を形成する。電鋳は、導
電膜2の材質に合せてニツケルメツキ、銅メツキ
を適用する。メツキ層3の厚さは導電膜2を十分
補強でき機械的に取り扱うことのできる厚さと
し、200μm程度で十分である。尤も、これより厚
くしてもよいことは勿論である。尚、この程度の
メツキ厚を得るのに、ニツケルメツキの場合0.5
〜5A/dm2の電流密度で35〜3.5時間、銅メツキ
の場合1〜5A/dm2の電流密度で24〜4.5時間要
する。 After forming the conductive film 2, it is immediately attached to an electrolytic plating jig and electroforming is started to form the plating layer 3 integrally with the conductive film 2 as shown in FIG. For electroforming, nickel plating or copper plating is applied depending on the material of the conductive film 2. The thickness of the plating layer 3 is such that it can sufficiently reinforce the conductive film 2 and can be handled mechanically, and a thickness of about 200 μm is sufficient. Of course, it may be made thicker than this. In addition, in order to obtain this level of plating thickness, in the case of nickel plating, 0.5
It takes 35-3.5 hours at a current density of ~5 A/ dm2 , and 24-4.5 hours at a current density of 1-5 A/ dm2 for copper plating.
電鋳終了後、治具より導電膜2およびメツキ層
3が形成された原盤1を取外し、水洗乾燥後機械
的に導電膜2をメツキ層3が一体的に形成された
電鋳板を原盤1より剥離しマスタ金型4を得る。 After electroforming is completed, the master 1 on which the conductive film 2 and the plating layer 3 are formed is removed from the jig, and after washing and drying, the electroformed plate on which the conductive film 2 and the plating layer 3 are integrally formed is mechanically replaced with the master 1. The master mold 4 is obtained by further peeling.
マスタ金型4の厚さ200μm程度のときは補強
のためにマスタ金型4の裏面に数mm厚程度のガラ
ス板を接着しておけばよい。 When the thickness of the master mold 4 is about 200 μm, a glass plate with a thickness of about several mm may be bonded to the back surface of the master mold 4 for reinforcement.
また、原盤としてホログラフ原盤を用いる場
合、剥離の際、レジスト膜がマスタ金型に付着す
るため、アルコール等の有機溶剤でレジスト膜を
溶解除去する必要がある。また、ガラス原盤を用
いる場合、原盤の模様面にまず後述の剥離層を設
け次に導電膜を形成するのがよい。該剥離層は原
盤の保護層としての役目を果すものである。 Further, when a holographic master is used as the master, the resist film adheres to the master mold during peeling, so it is necessary to dissolve and remove the resist film with an organic solvent such as alcohol. Further, when a glass master is used, it is preferable to first provide a release layer, which will be described later, on the patterned surface of the master, and then form a conductive film. The release layer serves as a protective layer for the master.
次に、第3図のように、マスタ金型4の模様面
にイオンプレーテイングにより模様面の上にAl
層を介して酸化Al層が形成された2層構造の剥
離層5を形成し、その上に導電膜6を形成した
後、電鋳により前記導電膜6に一体的にメツキ層
7を形成する。この導電膜6およびメツキ層7か
らなる電鋳板は、マスタ金型4の上に形成された
剥離層5の導電膜6側の界面から剥離されてマザ
ー金型8になる。導電膜6およびメツキ層7はマ
スタ金型4を製作した場合と同様の手段で形成さ
れる。 Next, as shown in Fig. 3, Al is applied onto the pattern surface of the master mold 4 by ion plating.
After forming a peeling layer 5 with a two-layer structure in which an oxidized Al layer is formed between layers, and forming a conductive film 6 thereon, a plating layer 7 is integrally formed on the conductive film 6 by electroforming. . The electroformed plate composed of the conductive film 6 and the plating layer 7 is peeled off from the interface on the conductive film 6 side of the peeling layer 5 formed on the master mold 4 to become the mother mold 8. The conductive film 6 and the plating layer 7 are formed by the same means as when the master mold 4 is manufactured.
剥離層5はマスタ金型4の微細な模様をマザー
金型8に正確に写し取るには薄いほどよいが、絶
縁性および強度が確保されなければならない。ピ
ンホールの発生や不純物の混入により絶縁性が損
われると、マスタ金型4とマザー金型8とが部分
的に融着し、剥離が困難になるばかりかマスタ金
型4の模様面が損傷するということになる。ま
た、強度が不足すると、取り扱いが困難になり、
長時間の電鋳過程で剥離が生じるようになる。 The thinner the release layer 5 is, the better in order to accurately copy the fine pattern of the master mold 4 onto the mother mold 8, but insulation and strength must be ensured. If the insulation is impaired due to the occurrence of pinholes or the incorporation of impurities, the master mold 4 and the mother mold 8 will be partially fused together, making it difficult to separate them and damaging the pattern surface of the master mold 4. That means doing so. Also, if the strength is insufficient, it will be difficult to handle.
Peeling begins to occur during the long electroforming process.
本発明においては、剥離層5はAl層のみなら
ず酸化Al層をもイオンプレーテイングにより形
成するので、0.04μm程度の緻密で強度に優れた
酸化Al薄膜を容易に形成することができ、しか
もこの薄膜は高純度故に絶縁性に優れている。
尚、剥離層の2層全体の厚さの上限は微細な模様
の再現性を確保するために0.2μmとする。 In the present invention, the peeling layer 5 is formed by ion plating not only the Al layer but also the Al oxide layer, so that a dense Al oxide thin film of about 0.04 μm and excellent strength can be easily formed. This thin film has excellent insulation properties due to its high purity.
Note that the upper limit of the total thickness of the two release layers is 0.2 μm in order to ensure reproducibility of fine patterns.
剥離層5はアルミニウムイオンプレーテイング
した後、酸素ガスを導入し、酸素放電によりアル
ミニウム層の表面層を酸化することによつて、残
部のAl層の上に酸化Alが重合一体化した2層構
造のものに形成される。 The peeling layer 5 is formed by aluminum ion plating, then introducing oxygen gas and oxidizing the surface layer of the aluminum layer by oxygen discharge, resulting in a two-layer structure in which Al oxide is polymerized and integrated on the remaining Al layer. formed into something.
アルミニウム層を形成した後酸化処理をする場
合、アルミニウム層を全部酸化せずに、模様面に
臨接した部分をアルミニウムのままにしておく
と、模様面の保護に役立つ。すなわち、マザー金
型8をマスタ金型4から剥離するとき、マザー金
型8側に剥離層が部分的に付着してマスタ金型4
の模様面が損傷することがあるが、アルミニウム
層で模様面が被覆されておれば、損傷が模様面ま
で及ぶことがない。マスタ金型4から多数のマザ
ー金型8を製作することを考えれば、マスタ金型
4の模様に損傷がないことは重要である。かかる
2層構造の剥離層は、アルミニウムイオンプレー
テイングの蒸着途中より酸素ガスを導入し、アル
ミニウムの蒸発中に酸化アルミニウムとし、Al
層の上に酸化Al層を一体的に形成することによ
つて得ることもできる。 When performing an oxidation treatment after forming an aluminum layer, it is helpful to protect the pattern surface if the aluminum layer is left in contact with the pattern surface without oxidizing the entire aluminum layer. That is, when the mother mold 8 is peeled off from the master mold 4, the peeling layer partially adheres to the mother mold 8 side and the master mold 4
The pattern surface may be damaged, but if the pattern surface is covered with an aluminum layer, the damage will not extend to the pattern surface. Considering that a large number of mother molds 8 are manufactured from the master mold 4, it is important that the pattern of the master mold 4 is not damaged. This two-layered release layer is made by introducing oxygen gas during aluminum ion plating to form aluminum oxide during aluminum evaporation.
It can also be obtained by integrally forming an Al oxide layer on top of the layer.
尚、マスタ金型4から多数のマザー金型8を製
作する場合、マスタ金型4の模様面に形成された
剥離層5は毎回完全に除去して、再び新たな剥離
層を形成した方がマスタ金型4に忠実な電鋳が行
える。既述の通り、マスタ金型4からマザー金型
8を剥離するとき、マスタ金型4に形成された剥
離層5に損傷が生じている場合があるからであ
る。 In addition, when manufacturing a large number of mother molds 8 from the master mold 4, it is better to completely remove the release layer 5 formed on the pattern surface of the master mold 4 each time and form a new release layer again. Electroforming can be performed faithfully to the master mold 4. This is because, as described above, when the mother mold 8 is peeled off from the master mold 4, the peeling layer 5 formed on the master mold 4 may be damaged.
以上のようにして得られたマザー金型8の模様
面に、第4図のように、剥離層9を形成した後、
導電膜10を形成して電鋳を行い、導電膜10に
一体的に形成されたメツキ層11を得る。そし
て、第5図のように、導電膜10およびメツキ層
11をマザー金型8から剥離して、マスタ金型4
と同様の凹凸模様を有するスタンパ金型12を得
る。この場合、剥離層9、導電膜10、メツキ層
11は既述の通り形成される。また、多数のスタ
ンパ金型12を得る方法についても、多数のマザ
ー金型8を得る場合と同様である。 After forming a release layer 9 on the patterned surface of the mother mold 8 obtained as above, as shown in FIG.
A conductive film 10 is formed and electroformed to obtain a plating layer 11 integrally formed on the conductive film 10. Then, as shown in FIG. 5, the conductive film 10 and plating layer 11 are peeled off from the mother mold 8, and the master mold 4
A stamper mold 12 having a similar uneven pattern is obtained. In this case, the peeling layer 9, the conductive film 10, and the plating layer 11 are formed as described above. Furthermore, the method for obtaining a large number of stamper molds 12 is the same as the method for obtaining a large number of mother molds 8.
スタンパ金型12は、模様と反対側の面をメツ
キ時の厚さのバラツキをなくすために平面研磨さ
れ、適宜寸法にカツテイングして樹脂型用金型に
装着される。 The stamper mold 12 is flat-polished on the side opposite to the pattern to eliminate variations in thickness during plating, cut to an appropriate size, and mounted on a resin mold.
このように、一枚の原盤1からマスタ金型4、
マザー金型8を作成し、それぞれ何度でも繰り返
し電鋳することで何枚ものスタンパ金型12を製
作することができる。 In this way, from one master 1 to the master mold 4,
A number of stamper molds 12 can be manufactured by creating a mother mold 8 and repeatedly electroforming each mold as many times as desired.
次に虹模様が形成されたPET(ポリエチレンテ
レフタレート)フイルムを原盤として多数のスタ
バン金型を得る場合の具体的実施例について説明
する。 Next, a specific example will be described in which a large number of Stirban molds are obtained using a PET (polyethylene terephthalate) film on which a rainbow pattern is formed as a master.
(1) 高さ0.1μmの凸部(凸部のピツチ1〜1.8μm)
によつて形成された虹模様を有する、厚さ
50μmのPETフイルムを150×150mmに切断して
有機溶剤で洗浄した。その後、スクリーン印刷
により、PETフイルムの模様面上にマーク、
文字、図形等を印刷し乾燥した。(1) Convex portion with a height of 0.1 μm (pitch of the convex portion: 1 to 1.8 μm)
Thickness with rainbow pattern formed by
A 50 μm PET film was cut into 150×150 mm pieces and washed with an organic solvent. Then, by screen printing, marks are placed on the patterned surface of the PET film.
Letters, figures, etc. were printed and dried.
(2) 次に、PETフイルムの模様面に高周波励起
式イオンプレーテイングによつてニツケル又は
銅の導電膜を形成した。(2) Next, a conductive film of nickel or copper was formed on the patterned surface of the PET film by high frequency excited ion plating.
・イオンプレーテイング条件
到達真空度 5×10-5Torr
アルゴン圧力 3×10-4Torr
高周波電力 100W
膜 厚 0.04μm 0.06μm、0.1μm
蒸発方法 ニツケル 電子ビーム蒸着
銅、抵抗加熱方式
(3) 導電膜形成後速やかに電解治具に取り付けニ
ツケルメツキ又は銅メツキにより電鋳を開始し
た。・Ion plating conditions Ultimate vacuum 5×10 -5 Torr Argon pressure 3×10 -4 Torr High frequency power 100W Film thickness 0.04μm 0.06μm, 0.1μm Evaporation method Nickel Electron beam evaporation Copper, resistance heating method (3) Conductive film Immediately after forming, it was attached to an electrolytic jig and electroforming was started by nickel plating or copper plating.
(4) メツキ層の厚さが200μmになつたところで電
鋳を終了し、治具より取り外し、水洗乾燥後、
ピンセツトでPETフイルムより電鋳板のみを
剥離し、マスタ金型を得た。(4) When the thickness of the plating layer reaches 200 μm, electroforming is finished, removed from the jig, washed with water, and dried.
Only the electroformed plate was peeled off from the PET film using tweezers to obtain a master mold.
(5) マスタ金型の裏面に2mm厚のガラス板をエポ
キシ接着剤により接着し補強した後、マスタ金
型の模様面に、0.1μmのアルミニウム層をイオ
ンプレーテイングにより形成し、つづいてイオ
ンプレーテイング装置に酸素ガスを導入して酸
素放電によりアルミニウム表面を酸化しAl層
と酸化Al層からなる2層構造の剥離層を形成
した。イオンプレーテイング条件等は下記の通
りである。(5) After adhering and reinforcing a 2 mm thick glass plate to the back side of the master mold using epoxy adhesive, a 0.1 μm aluminum layer is formed on the patterned surface of the master mold by ion plating, followed by ion plating. Oxygen gas was introduced into the teating device and the aluminum surface was oxidized by oxygen discharge to form a peeling layer with a two-layer structure consisting of an Al layer and an oxidized Al layer. Ion plating conditions etc. are as follows.
・アルミイオンプレーテイング条件
到達真空度 5×10-5Torr
ボンバード時アルゴン圧力 5×10-4Torr
蒸着時アルゴン圧力 3×10-4Torr
高周波電力 100W
ボンバード時間 10分
蒸発方式 抵抗加熱方式
・酸化処理条件
酸素圧力 5×10-4Torr
高周波電力 100W
酸化時間 20分
(6) 剥離層形成後、その上に導電膜をイオンプレ
ーテイングにより蒸着形成した。イオンプレー
テイング条件は(2)と同様である。・Aluminum ion plating conditions Ultimate vacuum level 5×10 -5 Torr Argon pressure during bombardment 5×10 -4 Torr Argon pressure during vapor deposition 3×10 -4 Torr High frequency power 100W Bombardment time 10 minutes Evaporation method Resistance heating method/Oxidation treatment Conditions: Oxygen pressure: 5×10 −4 Torr High frequency power: 100 W Oxidation time: 20 minutes (6) After forming the release layer, a conductive film was deposited thereon by ion plating. Ion plating conditions are the same as (2).
(7) 導電膜形成後速やかにメツキ治具に取り付け
メツキ層200μmになるまで電鋳を行つた。(7) Immediately after forming the conductive film, it was attached to a plating jig and electroforming was performed until the plating layer was 200 μm thick.
(8) 電鋳終了後、治具より取外し、水洗乾燥後ピ
ンセツトでマスタ金型から導電膜に一体的に形
成されたメツキ層(電鋳板)を剥離した。この
際、剥離層はマスタ金型側に完全に残り、電鋳
板のみが剥離し、マザー金型が得られた。(8) After electroforming, it was removed from the jig, washed with water, dried, and then the plating layer (electroformed plate) integrally formed on the conductive film was peeled off from the master mold using tweezers. At this time, the release layer remained completely on the master mold side, and only the electroformed plate was peeled off, yielding a mother mold.
(9) マザー金型を母型として、上記(5)〜(8)の行程
を同様に行つて、スタンパ金型を得た。(9) Using the mother mold as a mother mold, the steps (5) to (8) above were performed in the same manner to obtain a stamper mold.
(10) 同一のマザー金型から再度スタンパ金型を得
るに際して、マザー金型に残留した剥離層を毎
回20%水酸化ナトリウム水溶液で溶解除去し
て、新たな剥離層を形成して(6)〜(8)の行程を行
つた。叙上のようにして、一枚の虹模様が形成
されたPETフイルム原盤から多数のスタンパ
金型が得られたが、剥離層は極めて良質なもの
故母型の模様が犯されることなく、すべてのス
タンパ金型は極めて明瞭な凹凸模様が形成され
た。(10) When obtaining a stamper mold from the same mother mold again, each time the release layer remaining on the mother mold is dissolved and removed with a 20% aqueous sodium hydroxide solution to form a new release layer (6) ~ (8) steps were performed. As described above, a large number of stamper molds were obtained from a PET film master disk on which a single rainbow pattern was formed, but because the release layer was of extremely high quality, the pattern of the matrix was not damaged, and all stamper molds were The stamper mold formed an extremely clear uneven pattern.
(発明の効果)
以上説明した通り、本発明によれば、母型の模
様面に形成される剥離層をイオンプレーテイング
によつて形成するので、模様面の上にAl層を介
して緻密で強度に優れた高純度の酸化Al層から
なる2層構造の剥離層を容易に形成することがで
き、爾後の電鋳過程で剥離や絶縁不良を生じるこ
とがなく、取扱いが容易となる。(Effects of the Invention) As explained above, according to the present invention, the release layer formed on the patterned surface of the matrix is formed by ion plating, so that a dense layer can be formed on the patterned surface via the Al layer. A peeling layer with a two-layer structure consisting of a high-purity Al oxide layer with excellent strength can be easily formed, and there will be no peeling or insulation failure during the subsequent electroforming process, making it easy to handle.
また、剥離層の全体厚さを0.2μm以下としたの
で、母型の模様が虹模様のような微細な凹凸によ
つて形成されたものであつても、その再現性を損
うことがない。 In addition, since the total thickness of the release layer is 0.2 μm or less, even if the pattern of the matrix is formed by minute irregularities such as a rainbow pattern, the reproducibility will not be impaired. .
更に、母型の模様面は剥離層のうちのAl層で
被覆させるため、電鋳後、酸化Al層によつて母
型より子型を剥離する際、母型模様が微細模様で
あつても、模様面を損傷するおそれが皆無であ
り、母型を再使用しても微細模様の再現性に極め
て優れる。 Furthermore, since the patterned surface of the matrix is covered with the Al layer of the release layer, when the child mold is separated from the matrix by the oxidized Al layer after electroforming, even if the matrix pattern is a fine pattern, There is no risk of damaging the pattern surface, and the reproducibility of fine patterns is extremely excellent even when the matrix is reused.
本発明の電鋳金型の製造方法は、強度および絶
縁性並びに微細模様の再現性に優れた剥離層を容
易に形成でき、工業上の利用価値は著大である。 The method for manufacturing an electroforming mold of the present invention can easily form a release layer with excellent strength, insulation properties, and fine pattern reproducibility, and has great industrial utility value.
第1図〜第5図は実施例の製造行程の説明図で
あり、第1図は原盤に導電膜が形成された状態を
示す断面説明図、第2図はマスタ金型の形成状態
を示す断面説明図、第3図はマザー金型の形成状
態を示す断面説明図、第4図はスタンパ金型の形
成状態を示す断面説明図、第5図はスタンパ金型
の断面図である。
1…原盤、2,6,10…導電膜、3,7,1
1…メツキ層、4…マスタ金型、5,9…剥離
層、8…マザー金型、12…スタンパ金型。
Figures 1 to 5 are explanatory diagrams of the manufacturing process of the example. Figure 1 is a cross-sectional diagram showing a state in which a conductive film is formed on a master, and Figure 2 is a diagram showing a state in which a master mold is formed. FIG. 3 is an explanatory cross-sectional view showing the state of formation of the mother mold, FIG. 4 is an explanatory cross-sectional view showing the state of formation of the stamper mold, and FIG. 5 is a cross-sectional view of the stamper mold. 1...Master disc, 2,6,10...Conductive film, 3,7,1
DESCRIPTION OF SYMBOLS 1... Plating layer, 4... Master mold, 5, 9... Peeling layer, 8... Mother mold, 12... Stamper mold.
Claims (1)
上に絶縁性剥離層を形成し、該剥離層の上に導電
膜を形成した後、電鋳によつて導電膜の上にメツ
キ層を形成し、前記導電膜と一体化されたメツキ
層を母型から取外して母型の凹凸模様と凹凸状態
が反対の模様を有する子型を得る電鋳金型の製造
方法において、前記剥離層としてイオンプレーテ
イングによつて母型の模様面の上にAl層を介し
て酸化Al層が形成され、かつ全体厚さが0.2μm以
下のものを用いることを特徴とする電鋳金型の製
造方法。1. After forming an insulating release layer on the patterned surface of the master mold on which a fine uneven pattern is formed, and forming a conductive film on the release layer, a plating layer is formed on the conductive film by electroforming. In the method for producing an electroforming mold, the plating layer integrated with the conductive film is removed from the mother mold to obtain a child mold having a pattern with an uneven pattern opposite to that of the mother mold, wherein the peeling layer is 1. A method for producing an electroforming mold, characterized in that an oxidized Al layer is formed on the patterned surface of a matrix via an Al layer by ion plating, and the total thickness is 0.2 μm or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21821585A JPS6277492A (en) | 1985-09-30 | 1985-09-30 | Manufacture of electroformed die |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21821585A JPS6277492A (en) | 1985-09-30 | 1985-09-30 | Manufacture of electroformed die |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6277492A JPS6277492A (en) | 1987-04-09 |
JPH0419314B2 true JPH0419314B2 (en) | 1992-03-30 |
Family
ID=16716418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21821585A Granted JPS6277492A (en) | 1985-09-30 | 1985-09-30 | Manufacture of electroformed die |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6277492A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01246391A (en) * | 1988-03-29 | 1989-10-02 | Ricoh Co Ltd | Production of stamper |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS542179A (en) * | 1977-06-08 | 1979-01-09 | Toshiba Corp | Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector |
-
1985
- 1985-09-30 JP JP21821585A patent/JPS6277492A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS542179A (en) * | 1977-06-08 | 1979-01-09 | Toshiba Corp | Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector |
Also Published As
Publication number | Publication date |
---|---|
JPS6277492A (en) | 1987-04-09 |
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