JPS542179A - Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector - Google Patents

Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector

Info

Publication number
JPS542179A
JPS542179A JP6672777A JP6672777A JPS542179A JP S542179 A JPS542179 A JP S542179A JP 6672777 A JP6672777 A JP 6672777A JP 6672777 A JP6672777 A JP 6672777A JP S542179 A JPS542179 A JP S542179A
Authority
JP
Japan
Prior art keywords
measuring apparatus
low concentration
apparatus provided
gas measuring
radioactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6672777A
Other languages
Japanese (ja)
Inventor
Osamu Ozaki
Hideaki Hioki
Kusuo Ashibe
Katsumi Kubo
Masatake Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Nippon Atomic Industry Group Co Ltd
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Nippon Atomic Industry Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd, Nippon Atomic Industry Group Co Ltd filed Critical Toshiba Corp
Priority to JP6672777A priority Critical patent/JPS542179A/en
Publication of JPS542179A publication Critical patent/JPS542179A/en
Pending legal-status Critical Current

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  • Sampling And Sample Adjustment (AREA)
  • Measurement Of Radiation (AREA)

Abstract

PURPOSE: To perform correction of the apparatus automatically and readily by operating the measured values, etc. of gas concentration and the gas concentration after enriching and storage, and performing correction of the enriching part.
COPYRIGHT: (C)1979,JPO&Japio
JP6672777A 1977-06-08 1977-06-08 Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector Pending JPS542179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6672777A JPS542179A (en) 1977-06-08 1977-06-08 Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6672777A JPS542179A (en) 1977-06-08 1977-06-08 Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector

Publications (1)

Publication Number Publication Date
JPS542179A true JPS542179A (en) 1979-01-09

Family

ID=13324206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6672777A Pending JPS542179A (en) 1977-06-08 1977-06-08 Low concentration radioactive gas measuring apparatus provided with enrichment rate corrector

Country Status (1)

Country Link
JP (1) JPS542179A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6277492A (en) * 1985-09-30 1987-04-09 Hokoku Jushi Kogyo Kk Manufacture of electroformed die
JPH0259337A (en) * 1988-08-25 1990-02-28 Mitsubishi Gas Chem Co Inc Manufacture of thin copper foil plated circuit substrate
CN105203717A (en) * 2015-10-22 2015-12-30 中国核动力研究设计院 Inert gas monitor field calibration device and application method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6277492A (en) * 1985-09-30 1987-04-09 Hokoku Jushi Kogyo Kk Manufacture of electroformed die
JPH0419314B2 (en) * 1985-09-30 1992-03-30 Hokoku Jushi Kogyo
JPH0259337A (en) * 1988-08-25 1990-02-28 Mitsubishi Gas Chem Co Inc Manufacture of thin copper foil plated circuit substrate
CN105203717A (en) * 2015-10-22 2015-12-30 中国核动力研究设计院 Inert gas monitor field calibration device and application method thereof

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