JPS6271230A - Resist removing apparatus - Google Patents

Abstract

PURPOSE:To shorten resist removing time by providing first heating means for preliminarily heating a workpiece having resist and second heating means for removing the resist from the preliminarily heated workpiece. CONSTITUTION:A substrate having a resist placed on an electrode 20 is heated through the heated electrode 20, and the resist is removed by plasma. Other substrate having the resist is carried from a treating chamber 50 to a buffer chamber 30 during resist removing period, and the other substrate is placed on a heating base 10 and preliminarily heated. The substrate from which the resist is removed is conveyed from the electrode 20 to a table 65 by the rotating operation of a substrate scraper 66, conveyed by a belt conveyor 54 from the chamber 30 to a cassette chamber 70, and contained in a cassette. The other preliminarily heated. Thus, the resist removing time can be shortened.

Description

[Detailed description of the invention] [Field of application of the invention] The present invention relates to a resist removing device.

[Background of the invention]

Workpiece, for example, semiconductor element substrate (hereinafter abbreviated as substrate)
A resist removing device that forms a wiring pattern on the surface to be etched and removes the deposited resist from the substrate after etching the substrate is a device that heats the substrate after the etching process and thereby removes the resist. What has been done is known.

However, in such a device, if the dry etching device that etches the workpiece is a device that processes each workpiece one by one, that is, a single wafer type dry etching device, Since the time required to remove the resist using a resist removing device is longer than the etching time required for etching, it has been difficult to maintain a high overall throughput. Incidentally, related devices of this type include, for example, Japanese Patent Application Laid-Open No. 57-97
No. 616, JP-A No. 58-48915, and the like.

[Purpose of the invention]

The purpose of the present invention is to shorten the cyst removal time,
It is an object of the present invention to provide a resist removing device capable of maintaining a high throughput as a whole when combined with a single wafer type dry etching device.

[Summary of the invention]

The present invention has a first heating means for preheating a workpiece having a resist, and a second heating means for removing the resist from the preheated workpiece. This is an attempt to shorten the .

[Example of Father Ming]

An embodiment of the present invention will be described with reference to the drawings.

In the drawing, a workpiece having a resist, for example a substrate, is preheated l! In this case, the heating means 1 includes a heating source, for example, a heating table 1G with a built-in electric heater (not shown), a power source (not shown) to which the electric heater is connected, and an amount of power supplied from the power source to the electric heater. Control Ml to adjust and control the heating temperature of the substrate! (not shown). Further, in this case, the second heating means for removing the resist from the preheated substrate is arranged to face the counter electrode (not shown) with a discharge space in the vertical direction, for example. , an electrode I with a built-in electric heater (not shown), a power source (not shown) to which the electric heater is connected,
A control device (not shown) that controls the heating temperature of the substrate by adjusting the amount of power supplied to the electric heater from the power source, a power source to which the counter electrode is connected, such as a high frequency power source (not shown), and a discharge space that is depressurized and evacuated. an exhaust system M (not shown), and a gas supply device f! that supplies a predetermined flow rate of gas to the discharge space. (not shown). Note that the electrode 蜀 is grounded.

In the drawing, a buffer chamber I is connected to a processing chamber of a single wafer dry etching apparatus through a vacuum space cutoff means, such as a gate valve. A first transport means, for example, a belt transport device ω, transports a substrate having a resist between the buffer chamber I and the processing bacteria via a gate valve φ.
is provided.

The buffer cemetery is equipped with a processing container n having a counter electrode and an electrode m so that the counter electrode, the electrode ■, and the discharge space can be airtightly separated from the inside of the buffer chamber (toward), and a heating table. 10
is installed inside. The substrate having resist is transferred between the substrate transfer table 61 provided at the end of the buffer 1 chamber I of the belt conveying device ω, the heating table IO, and the electric current +12. A conveying means, for example, a rotary arm conveying device M63 having a substrate scooping device is provided. That is, the table 61, the heating table 10, and the electrode m are sequentially arranged on the rotation locus of the substrate scooper C in this case. In this case, a cassette chamber 7 is provided on the side wall of the buffer chamber I parallel to the substrate conveyance direction in the belt conveyance device ω.
0 is provided in communication with the inside of the buffer chamber (9).

A third transport means, for example, a belt transport device M@, is provided to transport the substrate from which the resist has been removed between the buffer chamber (9) and the cassette chamber π. A table 6 for transferring substrates is provided at the end of the buffer room of the belt transport device. In this case, the table can is table 6
The electric f!
A fourth transport means, for example, a rotating arm transport device 167 having a substrate scooper 6, is provided for transporting the substrate from which the resist has been removed between the substrate 1 and the table 6 within the batza chamber. That is, in this case, the electrode plate and the table S are arranged on the rotation locus of the substrate scooper ω. The rotation locus of each of the substrate scoops Q and 66 is such that it intersects the electrode only at the top.

Note that an exhaust system ff1 (not shown) is provided to evacuate the inside of the buffer chamber I under reduced pressure.

In the drawing, the substrate with resist is transported by a belt conveyor device ao.
gate valve φ from between the processing chambers to the buffer 1 chamber (9)
transported via. The substrate having the resist that has been conveyed to the end of the buffer chamber I of the belt conveyance device M60 is transferred to the table 61 by raising the table 61, and then transferred to a substrate scooping device. Then the substrate with resist.

The substrate is passed from the substrate hoist to the heating table 1G and placed on the heating table 10. The substrate scooping device that has passed the substrate having the resist onto the heating table 10 is retracted to a predetermined retraction position. In this state, by supplying power to the electric heater, the heating table lO
is heated, thereby preheating the substrate with the resist. Thereafter, this substrate is transferred from the heating table 10 to the electrode holder by means of a substrate holder and placed on the electrode.

Electricity of a substrate with such a preheated resist! !
At the time when the operation of placing the electrode on the electrode is completed, the counter electrode, the electrode (material), and the discharge space are airtightly separated from the buffer chamber 1 (9).

Thereafter, gas is supplied to the discharge space, and the pressure in the discharge space is adjusted to a predetermined processing pressure.

In this state, high frequency power is applied to the counter electrode, thereby generating glow discharge in the discharge space. This glow discharge converts the gas in the discharge space into a plug 1.

The substrate having the resist placed on the electrode array is heated via the IE pole X which is heated by the heat generated by the electric heater, and in this state the resist is removed by plasma.

During the resist removal process, other substrates having resist are carried from the processing chamber group into the buffer chamber (9) as described above, and these other substrates are placed on the heating table W. It is preheated. Note that the substrate from which the resist has been removed is transferred from the electrode array to the table by rotating the substrate, and then transferred to the belt transfer device 1.
64, the buffer 1 is transported from Murota to the cassette chamber π and stored in a cassette (not shown). In addition, other preheated substrates are heated at 1 [! After being placed in 2D, the resist is removed.

In this example, the single-wafer dryer 7 tengu g! After preheating a substrate with a resist that has been etched in the process on a heating table, it can then be heated with an electrode and the resist can be removed by plasma, so heating of a substrate with a resist that affects the overall throughput can be avoided. The time can be shortened, and the resist removal time can be shortened. Therefore, the overall throughput can be maintained at a high level.

Note that the first heating means for preheating the substrate having the resist may be one using a heating medium;
It is also possible to use microwaves. Furthermore, the second heating means for removing the resist from the preheated substrate may be one that simply heats the substrate without using plasma.

〔Effect of the invention〕

As described above, the present invention has the advantage of providing a resist removal apparatus that can shorten the resist removal time and maintain a high throughput as a whole when combined with a single-wafer dry etching apparatus.

[Brief explanation of drawings]

The drawing is a plan view showing an embodiment of the resist removal gIM according to the present invention.

Claims (1)

[Claims] 1. A first heating means for preheating a workpiece having a resist, and a second heating means for heating the preheated workpiece to remove the resist from the workpiece. A resist removal device characterized by: