JPS59208836A - Manufacturing device for semiconductor - Google Patents

Abstract

PURPOSE:To prevent the corrosion of Al without bringing Al into contact with air by transferring and placing a material to be treated, to which etching is completed, in a baking chamber as it is. CONSTITUTION:When a shutter 20 is opened and a loader 24 is operated, wafers W in a cassette 3 are placed on a forward carrying section 12, and pass through a non-baking section in a baking chamber 11 and are carried. When the shutter 20 is shut and a shutter 21 is opened, the wafers W are moved into an etching chamber 5, and loaded on a lower electrode 7 by a shifter 26. When the shutter 21 is shut and high-frequency power is applied between both electrodes 6, 7, plasma is generated on both electrodes, and Al layers on the surfaces of the wafers W are etched to a predetermined pattern. The etching is completed, a shutter 22 is opened, and the wafers W are placed on a return carrying section 13 by a shifter 26. The wafers W are moved by the returning carrying section 13 in the baking chamber 11 at the same time as the shutter 22 is shut, heated by a baking source 14 on their midways, and baked.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to semiconductor manufacturing equipment, and more particularly to a semiconductor manufacturing equipment that can prevent A-e corrosion during processing of an AJ film.

[Background technology]

One of the manufacturing processes of semiconductor devices is A! There is a process for forming a wiring layer, in which an Affl or A1 alloy film is formed on the entire surface of the semiconductor wafer and then etched into a predetermined wiring pattern. Incidentally, this type of etching uses a dry etching method using cci gas, but the C-e radicals generated during etching remain attached to the A1 film even after the etching is finished, and the H in the air , O, etc., to generate HC4, which may corrode the patterned A-e wiring and cause problems such as disconnection.

For this reason, the inventor of the present invention has proposed that after completion of dry etching, the wafer is removed from the vacuum etching apparatus, immediately transferred to a baking oven, and baked there. Remove radicals, A! Attempts are being made to prevent corrosion. However, with this countermeasure, it is not possible to completely eliminate the exposure to air from the etching equipment to the baking oven, and therefore it is difficult to immediately stop the progress of corrosion, and it is difficult to immediately stop the progress of corrosion. The inventors have found that problems arise, such as the need for quick operations for transfer.

[Purpose of the invention]

An object of the present invention is to provide a semiconductor manufacturing apparatus that can reliably prevent A4 i corrosion. Furthermore, it is an object of the present invention to provide a semiconductor manufacturing apparatus that can facilitate the handling of objects to be processed.

The above-mentioned objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, by arranging a beta chamber adjacent to the etching chamber of the etching apparatus and making it possible to transfer the processed workpiece that has been etched as is to the beta chamber, A2 can be air-filled between the end of etching and the beta. This means A! In addition to reliably preventing corrosion of the material, it also facilitates handling such as transfer of the material to be processed.

〔Example〕

1 and 2 are a plan view and a developed sectional view of an embodiment of the device according to the present invention. In the figure, 1 is a load cassette chamber, and 2 is an unload cassette chamber.
A cassette 3 in which etching has been completed can be installed, and an empty cassette 4 capable of storing a plurality of etched wafers can be installed in the unload cassette chamber 2.

Reference numeral 5 denotes an etching chamber adjacent to the load cassette chamber 1, in which an upper electrode 6 and a lower electrode 7 of parallel flat plates are arranged facing each other, a wafer W is placed on the lower electrode 7, and an etching chamber is placed between the two electrodes 6 and 7. High frequency power from a high frequency power source 8 can be applied to the high frequency power source 8. The etching chamber is also provided with a gas supply port 9 for supplying necessary etching gas such as CCI4 gas, and an exhaust port 10 connected to a vacuum pump (not shown) to maintain a predetermined degree of vacuum in the chamber. has been established.

11 is the etching chamber 5. This is a baking chamber provided adjacent to the load cassette chamber 1 and the unload cassette chamber 2, respectively. It is being extended. That is,
The forward transport section 12 is provided between the load cassette chamber 1 and the etching chamber 5, and the return transport section 13 is provided between the etching chamber 5 and the unload cassette chamber 2. Inside, a bake source 14 represented by an infrared lamp is disposed on the return conveyance section 13, and an exhaust port 15 is provided to connect to a vacuum pump (not shown) to evacuate the inside of the bake chamber 11. ing.

The reciprocating transport portions 12 and 13 are provided on the partition walls between the load cassette chamber 1 and the beta chamber 5, the bake chamber 11 and the etching chamber 5, and the bake chamber 11 and the unload cassette chamber 2.
Openings 16, 17 and 18.degree. 19 are formed facing the front, and these openings are provided with shutters 20.21 and 22.degree. 23, respectively, which can hermetically close the openings.

In the figure, 24 is a loader that transfers the wafer W in the cassette 3 to the forward transport section 12 in the load cassette chamber 1, and 25 is a loader that transfers the wafer W on the backward transport section 13 to the cassette 4 in the unload cassette chamber 2. The housing unloader 26 is a transfer device that transfers the wafer W between the forward and backward transport sections 12 and 13 and the lower electrode 7.

According to the above configuration, when the vacuum pump (not shown) is activated, air is exhausted from the exhaust port 10.15, and the etching chamber 5 and the baking chamber 11 are brought into the required vacuum state, with almost no air present. Become. Then, by supplying etching gas from the gas supply port 9, the inside of the etching chamber 5 is made to have a required gas atmosphere. Then, when the shutter 20 is opened and the loader 24 is operated by the action of a sequence control section (not shown) (the same applies hereafter), the wafer W in the cassette 3 is loaded onto the forward conveyance section 12 and the non-baked wafer in the bake chamber 11 is loaded. It is transported through various parts of the body. When the shutter 21 is opened after the shutter 20 is closed, the wave W is moved into the etching chamber 5 and transferred to the transfer device 26.
is mounted on the lower electrode 7 by.

When high frequency power is applied between the electrodes 6 and 7 at the center of the shutter 21, plasma is generated between the electrodes and the A7 layer on the surface of the wafer W is etched into a predetermined pattern.

After etching is completed, the shack 22 is opened and the transfer device 26 is opened.
The way/.W is placed on the return transport section 13. As soon as the shutter 22 is closed, the wafer/.W is moved within the bake chamber 11 by the return transport section 13, and on the way, it is heated by the bake source 14 and baked. Usually 80-10
It is carried out for 5 to 10 ml at a temperature of 0°C. This results in
A! The C, I3 radicals attached to are eliminated. At the same time, C! Since the inside of the baking chamber 11 is in a vacuum state, the radicals are prevented from coming into contact with air (outside air), so that HCl is not generated, and corrosion of A4 is reliably prevented.

After the baking is completed, the shutter 23 is opened, and the unloader 25 transfers the wafer/W to the unloading cassette chamber 2 as well as the return conveyance section 13, and further houses it in the cassette 4, thereby completing all the steps.

〔effect〕

(1) Since the etching chamber and the baking chamber are located next to each other, and the chamber is set to the required degree of vacuum, the etched wafer can be baked without being exposed to air, which prevents corrosion of A1. can be reliably prevented.

(2) Since the wafer can be directly transferred from the etching chamber to the bake chamber, even if the wafer is transferred slowly, it will not come into contact with air and its effects can be prevented, making wafer transfer and handling easier. can.

(3) Load cassette room, etching room, baking room.

The loader, forward transport section, transfer device,
Since communication is provided by transfer means such as a return transport section and an unloader, the wafer etching process (including leveling process) can be fully automated.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, the planar arrangement of each chamber may be a linear arrangement, and each transfer means may be other specific means. Note that the present invention is not limited to a structure in which the object to be processed can be baked in a vacuum state after etching, but may be configured to allow the object to be baked after etching the object to be processed before reaching the unload cassette chamber. This method is also effective because it can minimize the contact of the object to be processed with H,0.

[Application field]

The above explanation mainly describes the invention made by the present inventor, which is the field of application of semiconductor manufacturing equipment.
Although the present invention has been described above when applied to an etching apparatus, the present invention is not limited thereto, and can similarly be applied to any technique that requires continuous etching gas and baking steps.

[Brief explanation of drawings]

FIG. 1 is a plan configuration diagram of the device of the present invention, and FIG. 2 is a developed sectional view thereof. 1... Load cassette chamber, 2... Unload cassette chamber, 3, 4... Cassette, 5 = Etching chamber, 6
. . . Upper electrode, 7. Lower electrode, 11. Bake chamber, 12. Forward transport section, 13. Return transport section, 14.
・・Bake source external line lamp), 20-23・Shutter,
24...Loader, 25...Unloader, 26...
Transfer device, w Kawanami processed material (wafer). Agent: Patent attorney Akio Takahashi, ゛・;
)

Claims (1)

[Claims] 1. An etching chamber for etching the workpiece and a baking chamber for baking the workpiece after etching are adjacent to each other, and both chambers are configured to be maintained in a predetermined vacuum state,
A semiconductor manufacturing apparatus characterized in that the object to be processed after etching is baked without being exposed to air. 2. A partition between the etching chamber and the baking chamber is opened, and the object to be processed is removed from the opening. 3. A semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is configured to be able to be transferred through the baking chamber, and this opening can be hermetically closed by a shutter. 3. A load cassette chamber and an unload cassette are located adjacent to the bake chamber. 2. A semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is configured such that a chamber is provided, and the object to be processed can be taken in and out of the etching chamber through the baking chamber. 3. A load cassette chamber and an unload cassette are provided adjacent to the baking chamber. 3. A semiconductor manufacturing apparatus according to claim 1, wherein a chamber is provided, and the object to be processed can be taken in and out of the etching chamber through the baking chamber.