JPS6270286A - 単結晶製造装置 - Google Patents

単結晶製造装置

Info

Publication number
JPS6270286A
JPS6270286A JP21058285A JP21058285A JPS6270286A JP S6270286 A JPS6270286 A JP S6270286A JP 21058285 A JP21058285 A JP 21058285A JP 21058285 A JP21058285 A JP 21058285A JP S6270286 A JPS6270286 A JP S6270286A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
magnetic field
magnetic
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21058285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055796B2 (enrdf_load_stackoverflow
Inventor
Shigeo Nonaka
野中　重夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP21058285A priority Critical patent/JPS6270286A/ja
Publication of JPS6270286A publication Critical patent/JPS6270286A/ja
Publication of JPH055796B2 publication Critical patent/JPH055796B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP21058285A 1985-09-24 1985-09-24 単結晶製造装置 Granted JPS6270286A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21058285A JPS6270286A (ja) 1985-09-24 1985-09-24 単結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21058285A JPS6270286A (ja) 1985-09-24 1985-09-24 単結晶製造装置

Publications (2)

Publication Number Publication Date
JPS6270286A true JPS6270286A (ja) 1987-03-31
JPH055796B2 JPH055796B2 (enrdf_load_stackoverflow) 1993-01-25

Family

ID=16591699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21058285A Granted JPS6270286A (ja) 1985-09-24 1985-09-24 単結晶製造装置

Country Status (1)

Country Link
JP (1) JPS6270286A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424090A (en) * 1987-07-20 1989-01-26 Toshiba Ceramics Co Method and apparatus for producing single crystal
US6086671A (en) * 1997-04-25 2000-07-11 Sumitomo Sitix Corporation Method for growing a silicon single crystal
US7771530B2 (en) * 2001-01-18 2010-08-10 Siltronic Ag Process and apparatus for producing a silicon single crystal
JP2021046342A (ja) * 2019-09-19 2021-03-25 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424090A (en) * 1987-07-20 1989-01-26 Toshiba Ceramics Co Method and apparatus for producing single crystal
US6086671A (en) * 1997-04-25 2000-07-11 Sumitomo Sitix Corporation Method for growing a silicon single crystal
US7771530B2 (en) * 2001-01-18 2010-08-10 Siltronic Ag Process and apparatus for producing a silicon single crystal
JP2021046342A (ja) * 2019-09-19 2021-03-25 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法

Also Published As

Publication number Publication date
JPH055796B2 (enrdf_load_stackoverflow) 1993-01-25

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