JPS6270286A - 単結晶製造装置 - Google Patents
単結晶製造装置Info
- Publication number
- JPS6270286A JPS6270286A JP21058285A JP21058285A JPS6270286A JP S6270286 A JPS6270286 A JP S6270286A JP 21058285 A JP21058285 A JP 21058285A JP 21058285 A JP21058285 A JP 21058285A JP S6270286 A JPS6270286 A JP S6270286A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- raw material
- magnetic field
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 50
- 239000002994 raw material Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 9
- 238000011109 contamination Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000155 melt Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005426 magnetic field effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21058285A JPS6270286A (ja) | 1985-09-24 | 1985-09-24 | 単結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21058285A JPS6270286A (ja) | 1985-09-24 | 1985-09-24 | 単結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6270286A true JPS6270286A (ja) | 1987-03-31 |
| JPH055796B2 JPH055796B2 (enrdf_load_stackoverflow) | 1993-01-25 |
Family
ID=16591699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21058285A Granted JPS6270286A (ja) | 1985-09-24 | 1985-09-24 | 単結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6270286A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6424090A (en) * | 1987-07-20 | 1989-01-26 | Toshiba Ceramics Co | Method and apparatus for producing single crystal |
| US6086671A (en) * | 1997-04-25 | 2000-07-11 | Sumitomo Sitix Corporation | Method for growing a silicon single crystal |
| US7771530B2 (en) * | 2001-01-18 | 2010-08-10 | Siltronic Ag | Process and apparatus for producing a silicon single crystal |
| JP2021046342A (ja) * | 2019-09-19 | 2021-03-25 | 信越半導体株式会社 | 単結晶引上げ装置および単結晶引上げ方法 |
-
1985
- 1985-09-24 JP JP21058285A patent/JPS6270286A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6424090A (en) * | 1987-07-20 | 1989-01-26 | Toshiba Ceramics Co | Method and apparatus for producing single crystal |
| US6086671A (en) * | 1997-04-25 | 2000-07-11 | Sumitomo Sitix Corporation | Method for growing a silicon single crystal |
| US7771530B2 (en) * | 2001-01-18 | 2010-08-10 | Siltronic Ag | Process and apparatus for producing a silicon single crystal |
| JP2021046342A (ja) * | 2019-09-19 | 2021-03-25 | 信越半導体株式会社 | 単結晶引上げ装置および単結晶引上げ方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH055796B2 (enrdf_load_stackoverflow) | 1993-01-25 |
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