JPS626658B2 - - Google Patents

Info

Publication number
JPS626658B2
JPS626658B2 JP55012656A JP1265680A JPS626658B2 JP S626658 B2 JPS626658 B2 JP S626658B2 JP 55012656 A JP55012656 A JP 55012656A JP 1265680 A JP1265680 A JP 1265680A JP S626658 B2 JPS626658 B2 JP S626658B2
Authority
JP
Japan
Prior art keywords
layer
base
layers
emitter
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55012656A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56110257A (en
Inventor
Shoichi Shimizu
Kenichi Torii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP1265680A priority Critical patent/JPS56110257A/ja
Publication of JPS56110257A publication Critical patent/JPS56110257A/ja
Publication of JPS626658B2 publication Critical patent/JPS626658B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP1265680A 1980-02-05 1980-02-05 Differential-type transistor circuit device Granted JPS56110257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1265680A JPS56110257A (en) 1980-02-05 1980-02-05 Differential-type transistor circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1265680A JPS56110257A (en) 1980-02-05 1980-02-05 Differential-type transistor circuit device

Publications (2)

Publication Number Publication Date
JPS56110257A JPS56110257A (en) 1981-09-01
JPS626658B2 true JPS626658B2 (de) 1987-02-12

Family

ID=11811394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1265680A Granted JPS56110257A (en) 1980-02-05 1980-02-05 Differential-type transistor circuit device

Country Status (1)

Country Link
JP (1) JPS56110257A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3346193B2 (ja) * 1996-11-18 2002-11-18 松下電器産業株式会社 電力増幅器
JP3379376B2 (ja) * 1997-03-14 2003-02-24 松下電器産業株式会社 電界効果トランジスタおよびそれを用いた電力増幅器

Also Published As

Publication number Publication date
JPS56110257A (en) 1981-09-01

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