JPS6148269B2 - - Google Patents
Info
- Publication number
- JPS6148269B2 JPS6148269B2 JP55012657A JP1265780A JPS6148269B2 JP S6148269 B2 JPS6148269 B2 JP S6148269B2 JP 55012657 A JP55012657 A JP 55012657A JP 1265780 A JP1265780 A JP 1265780A JP S6148269 B2 JPS6148269 B2 JP S6148269B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- layers
- emitter
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 17
- 238000002955 isolation Methods 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 8
- 238000000605 extraction Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- DRSFVGQMPYTGJY-GNSLJVCWSA-N Deprodone propionate Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@@](C(C)=O)(OC(=O)CC)[C@@]1(C)C[C@@H]2O DRSFVGQMPYTGJY-GNSLJVCWSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265780A JPS56110260A (en) | 1980-02-05 | 1980-02-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265780A JPS56110260A (en) | 1980-02-05 | 1980-02-05 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56110260A JPS56110260A (en) | 1981-09-01 |
| JPS6148269B2 true JPS6148269B2 (de) | 1986-10-23 |
Family
ID=11811422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1265780A Granted JPS56110260A (en) | 1980-02-05 | 1980-02-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56110260A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6222911A (ja) * | 1985-07-22 | 1987-01-31 | Ngk Spark Plug Co Ltd | セラミツクグロ−プラグ |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5503168B2 (ja) * | 2009-03-19 | 2014-05-28 | 株式会社日立製作所 | 半導体集積回路装置 |
-
1980
- 1980-02-05 JP JP1265780A patent/JPS56110260A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6222911A (ja) * | 1985-07-22 | 1987-01-31 | Ngk Spark Plug Co Ltd | セラミツクグロ−プラグ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56110260A (en) | 1981-09-01 |
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