JPS626648B2 - - Google Patents
Info
- Publication number
- JPS626648B2 JPS626648B2 JP54008239A JP823979A JPS626648B2 JP S626648 B2 JPS626648 B2 JP S626648B2 JP 54008239 A JP54008239 A JP 54008239A JP 823979 A JP823979 A JP 823979A JP S626648 B2 JPS626648 B2 JP S626648B2
- Authority
- JP
- Japan
- Prior art keywords
- peak
- thickness
- implanted
- ion implantation
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 150000001793 charged compounds Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- -1 BP 2 + Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP823979A JPS55102227A (en) | 1979-01-29 | 1979-01-29 | Ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP823979A JPS55102227A (en) | 1979-01-29 | 1979-01-29 | Ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55102227A JPS55102227A (en) | 1980-08-05 |
| JPS626648B2 true JPS626648B2 (enrdf_load_stackoverflow) | 1987-02-12 |
Family
ID=11687587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP823979A Granted JPS55102227A (en) | 1979-01-29 | 1979-01-29 | Ion implantation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55102227A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6454169A (en) * | 1987-08-22 | 1989-03-01 | Akira Hoshi | Controller for bath hot water |
| JPH0293242A (ja) * | 1988-09-30 | 1990-04-04 | Matsushita Electric Ind Co Ltd | 給湯機付風呂釜 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5887816A (ja) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | 不純物のド−ビング方法 |
| JPS62229934A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 半導体装置の製造方法 |
-
1979
- 1979-01-29 JP JP823979A patent/JPS55102227A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6454169A (en) * | 1987-08-22 | 1989-03-01 | Akira Hoshi | Controller for bath hot water |
| JPH0293242A (ja) * | 1988-09-30 | 1990-04-04 | Matsushita Electric Ind Co Ltd | 給湯機付風呂釜 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55102227A (en) | 1980-08-05 |
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