JPS626646B2 - - Google Patents
Info
- Publication number
- JPS626646B2 JPS626646B2 JP54056152A JP5615279A JPS626646B2 JP S626646 B2 JPS626646 B2 JP S626646B2 JP 54056152 A JP54056152 A JP 54056152A JP 5615279 A JP5615279 A JP 5615279A JP S626646 B2 JPS626646 B2 JP S626646B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- boat
- rotation
- semiconductor
- support rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 51
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
【発明の詳細な説明】
本発明は、半導体ウエーハの製造装置に関する
もので、特に、種々の熱処理を施す製造プロセス
においてウエーハのそりあるいはスリツプ転位等
の欠陥を生じさせにくい半導体ウエーハの製造装
置を提供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor wafer manufacturing apparatus, and in particular, provides a semiconductor wafer manufacturing apparatus that is less likely to cause defects such as wafer warpage or slip dislocation during manufacturing processes that perform various heat treatments. It is something to do.
半導体装置、例えばICを製造するときには、
シリコン等の半導体ウエーハを複数枚互いに平行
になるようにボートに並立して設置し、このボー
トを筒形の反応容器に入れ、容器の軸心にその主
面が垂直になるようにし、加熱してウエーハに所
定の拡散を行なう。通常、これらの処理は、高温
で行なわれるため、ウエーハのそりやスリツプ等
の転位が生じ、ウエーハの特性不良の原因となり
半導体装置製造の歩留りを著しく低下させること
になる。これらのそりやスリツプ等をできる限り
除去するために熱処理をする反応容器にボートを
出し入れするときには、できるだけゆつくり行な
うこと等による考慮が為されて来た。 When manufacturing semiconductor devices, such as ICs,
A number of semiconductor wafers, such as silicon, are placed parallel to each other in a boat, and the boat is placed in a cylindrical reaction vessel, with its main surface perpendicular to the axis of the vessel, and heated. Then, a predetermined diffusion is performed on the wafer. Since these treatments are usually performed at high temperatures, dislocations such as warpage and slips occur in the wafer, which causes poor wafer characteristics and significantly reduces the yield of semiconductor device manufacturing. In order to eliminate these warps and slips as much as possible, consideration has been given to taking the boat as slowly as possible when loading and unloading it into and out of the reaction vessel where heat treatment is to be performed.
しかし、処理温度が1100℃〜1200℃程度になる
と上述の対策では十分でなく、転位等の欠陥を防
止することができない。すなわち、ウエーハがボ
ートに置かれて加熱あるいは冷却されるときボー
トに接触している部分と他の部分、特に頂部近く
とでは熱伝導の差により温度差が生じ、熱歪みが
生じ、それがスリツプ等の転位の発生を招くこと
になる。通常、半導体装置の製造においてはこの
ような熱処理が何回も繰り返されるので、プロセ
スを経る度に熱歪み、欠陥が増加し、最終的な製
品の歩留りを著しく低下させることになる。 However, when the processing temperature reaches about 1100° C. to 1200° C., the above measures are not sufficient and defects such as dislocation cannot be prevented. In other words, when a wafer is placed on a boat and heated or cooled, there is a temperature difference between the part that is in contact with the boat and other parts, especially near the top, due to differences in heat conduction, resulting in thermal distortion, which causes slippage. This results in the occurrence of dislocations such as. Normally, in the manufacture of semiconductor devices, such heat treatment is repeated many times, so that thermal distortion and defects increase with each process, significantly reducing the yield of the final product.
第１図は従来の製造方法で用いられるボート１
１上に置かれた半導体ウエーハ１２を示すもの
で、ウエーハ１２はボート１１に設けられた溝１
３で支持される。しかし、この方法だと、第２図
に示すように、ボートのウエーハ支持棒１４に置
かれたウエーハ１２の支持棒１４に接する部分１
５と他の部分、特に頂点１６との間に、熱伝導の
相違から温度差が生じ、ウエーハのそり、スリツ
プ等を生じさせる原因になつてしまう。 Figure 1 shows a boat 1 used in the conventional manufacturing method.
This figure shows a semiconductor wafer 12 placed on a boat 11, and the wafer 12 is placed in a groove 1 provided in a boat 11.
Supported by 3. However, with this method, as shown in FIG.
A temperature difference occurs between the wafer 5 and other parts, especially the apex 16, due to differences in heat conduction, which causes warping, slipping, etc. of the wafer.
このような従来の方法の欠陥を克服する為に前
述のように徐熱、徐冷をする他に、いくつかの工
夫が為されて来ている。例えば特開昭53−101976
号公報に見られるものは、熱処理の度にウエーハ
の設置位置を180度回転、つまり、天地を逆にす
るものである。しかし、こられの方法はいずれも
本質的な解決を与えてはおらず、依然として問題
は残されたままになつている。 In order to overcome these deficiencies of conventional methods, in addition to slow heating and slow cooling as described above, several other techniques have been devised. For example, JP-A-53-101976
In the method shown in the publication, the wafer installation position is rotated 180 degrees every time heat treatment is performed, that is, the wafer is turned upside down. However, none of these methods has provided an essential solution, and the problem still remains.
本発明は以上述べた如き、従来の半導体装置の
製造方法の欠陥の克服を目的として為されたもの
で本発明の半導体ウエーハの製造装置の特徴は、
複数個のウエーハ回転支持棒、該回転支持棒に回
転を与える回転軸および連結ベルト、反応ガス注
入および排出口を具備し、前記ウエーハ回転支持
棒の位置を調節する手段と、前記回転軸の位置を
調節する手段を有する半導体ウエーハ支持ボート
と該支持ボートを装着する筒状反応容器とを備え
たことである。 The present invention has been made with the aim of overcoming the deficiencies of the conventional semiconductor device manufacturing method as described above.The semiconductor wafer manufacturing apparatus of the present invention has the following features:
A means for adjusting the position of the wafer rotation support rod, comprising a plurality of wafer rotation support rods, a rotation shaft and a connecting belt that rotate the rotation support rods, a reaction gas injection and discharge port, and a position of the rotation shaft. This invention comprises a semiconductor wafer support boat having means for adjusting the temperature of the semiconductor wafer, and a cylindrical reaction vessel to which the support boat is attached.
以下、図面を用いて本発明の詳細を具体的に示
す。 Hereinafter, details of the present invention will be specifically illustrated using the drawings.
本発明の前提となる半導体ウエーハの製造方法
は、第３図に示すように、ウエーハ１２を、溝が
施された回転支持棒２１で支持し、筒状の反応容
器（図示せず）内に設置し、該回転支持棒２１の
回転によつてウエーハ１２に回転を与えつつ熱処
理を行なうものである。この様子を横方向から眺
めた図が第４図である。ウエーハ１２は回転支持
棒２１に施された溝２２で支持され、回転支持棒
２１の回転により回転する。 As shown in FIG. 3, the method for manufacturing a semiconductor wafer, which is the premise of the present invention, involves supporting a wafer 12 with a rotary support rod 21 provided with a groove, and placing the wafer 12 in a cylindrical reaction vessel (not shown). The rotation support rod 21 rotates the wafer 12 to perform heat treatment. FIG. 4 shows this situation viewed from the side. The wafer 12 is supported by a groove 22 formed in a rotary support rod 21 and rotates as the rotary support rod 21 rotates.
この方法によつて、ウエーハがボートの支持棒
に接触する部分は限定されることなく遂次移動し
ウエーハ外周が一様にボートの支持棒に接触する
ことになる。このように、ウエーハに回転を与え
ながら熱処理を施すことは、第２図を用いて説明
したようなウエーハ面内での温度差、つまり熱歪
みが発生しない為、そり、スリツプ等の欠陥が生
じにくいウエーハが得られるばかりでなく、ウエ
ーハ面内の温度分布が一様で回転により反応ガス
に接触する状態がウエーハ面内で一様なため、不
純物拡散、酸素あるいは窒素等の雰囲気中でのア
ニーリングが均一に行なえるという効果も期待で
きる。このように、ウエーハ面内に熱歪みが生じ
ない、均一な不純物拡散あるいはアニーリングが
できるということは半導体チツプ製造の歩留りを
向上させる上で極めて重要なことである。ウエー
ハの回転数は、ウエーハ径、処理温度等で最適値
が異なるが、回転によるウエーハの振動による弊
害を考慮すれば10〜20rpmが適当である。 With this method, the portion of the wafer that contacts the support rod of the boat is not limited and moves successively, so that the outer circumference of the wafer uniformly contacts the support rod of the boat. In this way, performing heat treatment while rotating the wafer does not cause temperature differences within the wafer surface, that is, thermal distortion, as explained using Figure 2, which can cause defects such as warpage and slips. Not only is it possible to obtain a wafer that is difficult to use, but the temperature distribution within the wafer surface is uniform, and the state of contact with the reaction gas due to rotation is uniform within the wafer surface, making it difficult for impurity diffusion and annealing in an atmosphere such as oxygen or nitrogen. It can also be expected that the process can be performed uniformly. As described above, it is extremely important to be able to perform uniform impurity diffusion or annealing without causing thermal distortion within the wafer surface in order to improve the yield of semiconductor chip manufacturing. The optimal value for the rotational speed of the wafer varies depending on the wafer diameter, processing temperature, etc., but 10 to 20 rpm is appropriate when considering the adverse effects of vibration of the wafer due to rotation.
第５図は、本発明の半導体ウエーハ加工装置の
主要部を断面図で示すものである。第５図におい
てウエーハ１２を支持し回転させるウエーハ回転
支持棒２１は耐熱性、防汚染性等の観点から石英
ガラス等で造られることが望ましい。２３は回転
軸でモーター等の手段（図示せず）をもつて回転
しその回転は連結ベルト２４によつて回転支持棒
２１に伝えられる。ウエーハ径の大きさによつ
て、回転支持棒２１の間隔を調節しなければなら
ないが、回転支持棒２１、回転軸２３は第６図に
示すように可動性を有し、固定ネジ２５によつ
て、適当位置に固定される。２６は反応ガスの注
入口あるいは排出口であり、必要に応じて、使用
あるいは閉鎖すれば良い。以上の機能を具備する
ボート２７は、筒状反応容器２８の中心位置にウ
エーハ１２が来るように装着され、使用に供せら
れる。第６図は第５図を縦方向から眺めた図であ
る。ウエーハ回転支持棒２１は処理ウエーハの径
により、位置調節溝２９中を移動させ、固定ネジ
２５によつて、適当位置に固定される。回転軸２
３の位置も、連結ベルト２４の一定の長さを満足
させる為に、同様に移動し、固定させられる。ウ
エーハの回転数は、モーター（図示せず）等に連
動した回転軸２３の回転数によつて決定される。 FIG. 5 is a sectional view showing the main parts of the semiconductor wafer processing apparatus of the present invention. In FIG. 5, the wafer rotation support rod 21 that supports and rotates the wafer 12 is desirably made of quartz glass or the like from the viewpoint of heat resistance and stain resistance. Reference numeral 23 denotes a rotating shaft which is rotated by means such as a motor (not shown), and its rotation is transmitted to the rotating support rod 21 by a connecting belt 24. The interval between the rotation support rods 21 must be adjusted depending on the size of the wafer diameter, but the rotation support rods 21 and rotation shafts 23 are movable as shown in FIG. Then it will be fixed in place. Reference numeral 26 indicates an inlet or an outlet for the reaction gas, which may be used or closed as required. The boat 27 having the above-mentioned functions is mounted so that the wafer 12 is placed in the center of the cylindrical reaction vessel 28, and is ready for use. FIG. 6 is a vertical view of FIG. 5. The wafer rotation support rod 21 is moved in the position adjustment groove 29 depending on the diameter of the wafer to be processed, and is fixed at an appropriate position by the fixing screw 25. Rotating axis 2
Position 3 is similarly moved and fixed in order to satisfy a certain length of the connecting belt 24. The rotation speed of the wafer is determined by the rotation speed of a rotating shaft 23 that is linked to a motor (not shown) or the like.
以上、本発明の具体例を半導体ウエーハの熱処
理、不純物拡散等に限つて示したが、本発明が半
導体ウエーハの製造のみならず、広範囲の物質、
目的に適用され得ることは極めて明らかである。 Although the specific examples of the present invention are limited to heat treatment of semiconductor wafers, impurity diffusion, etc., the present invention is applicable not only to the production of semiconductor wafers but also to a wide range of materials,
It is quite clear that it can be applied for any purpose.
第１図は、従来のボートに半導体ウエーハを設
置した状態を示す針視図、第２図は、上記半導体
ウエーハ面内で温度差が生じることを示すための
断面図、第３図は、本発明の概略を示す側面図で
回転支持棒上のウエーハが回転する様子を示す。
第４図は、第３図の正面断面図、第５図は、本発
明の半導体ウエーハ製造装置の主要部を示す断面
図、第６図は第５図を縦方向から眺めた側面図で
ある。１２……半導体ウエーハ、２１……ウエー
ハ回転支持棒、２３……回転軸、２４……連結ベ
ルト、２５……位置固定ネジ、２６……反応ガス
注入あるいは排出口、２７……ボート、２８……
筒状反応容器、２９……位置調節溝。
Fig. 1 is a needle perspective view showing a state in which semiconductor wafers are installed in a conventional boat, Fig. 2 is a cross-sectional view showing that a temperature difference occurs within the surface of the semiconductor wafer, and Fig. 3 is a main view of the present invention. FIG. 2 is a side view schematically illustrating the invention and shows how a wafer on a rotation support rod rotates.
4 is a front sectional view of FIG. 3, FIG. 5 is a sectional view showing the main parts of the semiconductor wafer manufacturing apparatus of the present invention, and FIG. 6 is a side view of FIG. 5 viewed from the vertical direction. . 12... Semiconductor wafer, 21... Wafer rotation support rod, 23... Rotating shaft, 24... Connection belt, 25... Position fixing screw, 26... Reaction gas injection or discharge port, 27... Boat, 28... …
Cylindrical reaction vessel, 29... position adjustment groove.
Claims (1)
に回転を与える回転軸および連結ベルト、反応ガ
ス注入および排出口を具備し、前記ウエーハ回転
支持棒の位置を調節する手段と、前記回転軸の位
置を調節する手段を有する半導体ウエーハ支持ボ
ートと、該支持ボートを装着する筒状反応容器と
を備えたことを特徴とする半導体ウエーハの製造
装置。1 A device comprising a plurality of wafer rotation support rods, a rotation shaft and a connecting belt that rotate the rotation support rods, a reaction gas injection and discharge port, means for adjusting the position of the wafer rotation support rods, and a means for adjusting the position of the rotation shaft. 1. A semiconductor wafer manufacturing apparatus comprising: a semiconductor wafer support boat having means for adjusting the position; and a cylindrical reaction vessel to which the support boat is attached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5615279A JPS55148433A (en) | 1979-05-08 | 1979-05-08 | Manufacture of semiconductor device and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5615279A JPS55148433A (en) | 1979-05-08 | 1979-05-08 | Manufacture of semiconductor device and device therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55148433A JPS55148433A (en) | 1980-11-19 |
| JPS626646B2 true JPS626646B2 (en) | 1987-02-12 |
Family
ID=13019109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5615279A Granted JPS55148433A (en) | 1979-05-08 | 1979-05-08 | Manufacture of semiconductor device and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55148433A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57138130A (en) * | 1981-02-20 | 1982-08-26 | Fujitsu Ltd | Diffusion treatment method |
| US5180150A (en) * | 1992-01-24 | 1993-01-19 | Hughes Danbury Optical Systems, Inc. | Apparatus for providing consistent registration of semiconductor wafers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4834670A (en) * | 1971-09-07 | 1973-05-21 | ||
| JPS5277674A (en) * | 1975-12-22 | 1977-06-30 | Siemens Ag | Method of heat treatment for semiconductor board |
-
1979
- 1979-05-08 JP JP5615279A patent/JPS55148433A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4834670A (en) * | 1971-09-07 | 1973-05-21 | ||
| JPS5277674A (en) * | 1975-12-22 | 1977-06-30 | Siemens Ag | Method of heat treatment for semiconductor board |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55148433A (en) | 1980-11-19 |
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