KR100275366B1 - Apparatus for the epitaxial growth comprising a plurality of board holders - Google Patents

Abstract

According to the present invention, by increasing the number of substrate holders to simultaneously perform a pretreatment step and a post-treatment step in a single device, which are the main causes of time loss in the conventional thermal wall deposition method, the thermal wall deposition method can be used. It is an object of the present invention to provide a thermal wall evaporator including a plurality of substrate holders capable of mass production of thin films.

According to the present invention, a substrate holder capable of holding and heating a substrate to be processed, and a thermal wall deposition apparatus including a substrate held in a state held by the substrate holder and a heat wall portion for receiving and depositing a deposition material, the substrate holder includes: A plurality of holders that can be simultaneously introduced into a plurality of processes, wherein the thermal wall evaporator additionally comprises a holder moving means for moving the plurality of holders in the order of the process. Is provided.

Description

Hot Wall Evaporator with Multiple Substrate Holders

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal wall deposition machine, and more particularly, to a thermal wall deposition apparatus including a plurality of substrate holders capable of simultaneously increasing the yield per unit time by performing a plurality of deposition processes.

As a method of growing a thin film of a semiconductor, a group IV compound (for example, silicon, germanium), a group III-V compound (for example, GaAs, AlGaAs, InGaAs, InP, GaAsP, etc.), and a group II-VI compound (For example, ZnTe, CdTe, CdS, ZnS, HgCdTe, ZnCdTe, etc.) As a method of growing a thin film of the semiconductor, there is a thermal vapor deposition method, sputtering method, chemical vapor deposition method, molecular beam deposition method (molecular beam epitaxy), etc. One example of a thermal evaporation method is hot wall epitaxy or hot wall evaporation.

The above-described heat deposition method is a method in which a material that is an evaporation source is directly heated to reach the substrate in a gaseous state, and then aggregated on the substrate to grow a film. In fact, when the material of the evaporation source is heated and deposited on the substrate, there is a limit temperature at which molecules incident on the substrate are deposited. Therefore, when heating above the limit temperature, the crystal film growth is impossible because atoms or molecules reached to the substrate are not deposited or are deposited and then evaporated again to agglomerate in a lower temperature part.

Theoretically, when deposited at thermodynamic equilibrium, it is possible to grow high quality thin films with few crystal defects. Therefore, the temperature of the evaporation source and the substrate must be adjusted to be the same. In other words, the substrate must be heated to a suitable temperature so that the atoms or molecules reached to the substrate have sufficient mobility to form an evenly arranged crystal structure.

The hot wall deposition method has the advantage that it is easy to control the evaporation source, the temperature of the substrate, the temperature of the hot wall and the growth of the semiconductor thin film in the thermodynamic equilibrium. However, large area, mass productivity, and doping difficulties remain the biggest disadvantages.

The hot wall deposition method changes the quality of the thin film according to the surface condition of the substrate, the temperature of the substrate, and the heat treatment state of the thin film after deposition. Regardless of the temperature with the outside, after-treatment of the annealing (annealing) at a proper temperature must be performed.

In general, the time required for the pretreatment step and the post-treatment step occupies almost the entire time required for the production of the thin film, which significantly reduces the number of thin films produced per unit time compared to the actual deposition time.

As shown in FIG. 1, the heat wall evaporator according to the related art is composed of a substrate holder part 100 and a heat wall part 110 formed inside a chamber (not shown). The substrate holder part 100 includes a substrate holder 102 for fixing one substrate 103 and a substrate heater 101 capable of heating the substrate 103. In addition, the heat wall 110 is a heat wall for depositing the deposition material 112 or the dopant 113 on the substrate 103 by applying heat to the quartz tube 114 containing the deposition material 112 or the dopant 113. It consists of 111.

In the above-described conventional thermal wall evaporator, the substrate on which the deposition material is to be deposited is subjected to a thermal pretreatment step to remove contaminants on the surface of the substrate when the deposition material is maintained at the deposition temperature, and then maintained at the temperature of the substrate to be deposited. It moves to the center of the heat wall and is deposited.

After deposition, the substrate is maintained for a while in a vacuum for heat treatment such as annealing or lowering to room temperature. All these factors serve as an important variable to increase the deposition time by the thermal wall deposition method. In the conventional semiconductor thin film evaporator using the thermal wall deposition method, since all processes such as the deposition process and the heat treatment process before and after the deposition are performed on one substrate, the time loss caused by the heat treatment process before and after deposition is two to three times higher than the deposition time. Too much time had the disadvantage of not being able to achieve a rapid process.

Therefore, the present invention has been made to solve the above problems of the prior art, the heat treatment process in the pre-treatment step and the post-treatment step, which is the main cause of the time loss in the existing heat-wall evaporator simultaneously performed in one equipment It is an object of the present invention to provide a thermal wall deposition apparatus including a plurality of substrate holders capable of producing a large amount of high quality thin film using a thermal wall deposition method by increasing the number of substrate holders.

1 is a cross-sectional view of a hot wall evaporator according to the prior art,

2 is a plan view from above of an inside of a chamber of a heat wall evaporator including a plurality of substrate holders manufactured according to one embodiment of the present invention;

FIG. 3 is a cross-sectional view of a hot wall deposition machine including a plurality of substrate holders taken along the line AA ′ of FIG. 2.

According to the present invention for achieving the above object, a thermal wall evaporator including a plurality of substrate holder, a substrate holder capable of holding and heating the substrate to be processed, and accommodates the substrate and the deposition material held by the substrate holder There is provided a heat wall evaporator comprising a heat wall portion for vapor deposition. Here, the substrate holder is a plurality of holders that can be simultaneously put into a plurality of processes, the heat wall evaporator additionally includes a holder moving means for moving the plurality of holders in the process order.

It is preferable that a heat dissipation plate is arranged between the plurality of holders and the heat wall portion to block radiant heat from the heat wall portion.

The holder moving means may include a rotating shaft and a plurality of cantilevered holder holding arms that extend radially from the rotating shaft to hold one or more holders, respectively. The pivoting surfaces of the plurality of holder holding arms are formed above the heat wall portion, and the heat dissipation plate is provided between the pivoting surfaces of the plurality of holder holding arms and the heat wall portion, and is formed of a disc in which the upper portion of the heat wall portion is cut out. Is good.

The holder holding arm may further include lifting means for lifting the holder.

It is preferred that the plurality of holder holding arms have discontinuities that are mediated by a thermal insulating material.

The hot wall evaporator may further include a turning time and position of the plurality of holder holding arms, a lifting time and position of the holder by the lifting means, and a heating time and temperature of the substrate in the holder according to a predetermined program. It may further include a control unit for controlling the overall operation of the hot wall evaporator.

The thermal wall deposition apparatus configured as described above may be used for semiconductor thin film deposition, in which case the plurality of holders are configured to circulate the semiconductor thin film deposition process step by step.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

FIG. 2 is a plan view of the inside of a chamber of a thermal wall evaporator including a plurality of substrate holders manufactured in accordance with the present invention, and FIG. 3 is a cross-sectional view of the thermal wall evaporator including a plurality of substrate holders cut along the line AA ′ of FIG. 2.

The semiconductor thin film evaporator using the hot wall deposition method according to the embodiment of the present invention, the chamber 200 for forming a vacuum, the rotating shaft 220 formed in the chamber 200, the substrate holder extending radially from the rotating shaft 220 The portion 210, a heat wall portion 110 for depositing a deposition material, and a heat dissipation plate 230 formed between the heat wall portion 110 and the substrate holder portion 210.

The rotation shaft 220 is formed in the vertical upper direction at the bottom center of the chamber 200, and three substrate holders 210 are formed at 120 ° intervals in the vertical direction about the rotation shaft 220. The substrate holder 210 is a cantilever 211 fixed to the rotating shaft 220, an adapter beam 212 extended by being coupled with a pin, etc. at the end of the cantilever beam 211, a substrate coupled to the end of the adapter beam 212. It is composed of a holder 102.

In addition, a removable substrate heater 101 is provided on the substrate holder 102, and a thermal insulation material 213 is formed between the cantilever 211 and the adapter beam 212. The heat dissipation plate 230 is positioned below the substrate holder 210, and is fixed to the heat dissipation plate pedestal 231 formed in a direction upward from the bottom surface of the chamber 200, and a disc having a top portion of the heat wall part 110 cut out. It is formed in a shape.

The heat wall part 110 is positioned below the groove of the heat dissipation plate 230, and is positioned to coincide with the circumference of the substrate holder 102 as it rotates. Since the detailed configuration of the heat wall portion 110 is the same as the prior art, it is omitted here. In addition, a control unit (not shown) for controlling the rotating shaft 220, the substrate heater 101, and the heat wall part 110 is formed outside the chamber 200.

Looking at the operation of the thermal wall evaporator including a plurality of substrate holder having the above configuration as follows.

First, the substrate 103 to be loaded from the loading portion (not shown) of the chamber is fixed to each substrate holder 102. Subsequently, the substrate heater 101 is placed on the substrate 103 fixed to the substrate holder 102, and the temperature is controlled by a controller (not shown) connected by a wire or the like from the substrate heater 101 to adjust the substrate heater 101. ) Is subjected to a pretreatment thermal process.

Then, the rotary shaft 220 is rotated to move one substrate holder 101 to the heat wall unit 110 to be aligned with each other, and then a substrate temperature and a heat wall temperature suitable for the deposition process are set so that the substrate heater 101 and The temperature of the heat wall part 110 is adjusted through a control part. Thereafter, heat is applied to the substrate heater 101 and the heat wall part 110 to deposit the deposition material on the substrate. At this time, it is preferable to include elevating means for elevating the substrate holder 101 to the substrate holder 210 in order to approach the substrate holder 101 to the heat wall portion 110 by a suitable distance.

Subsequently, the substrate 103, which has undergone the deposition process by rotating the rotating shaft again, is annealed according to the annealing temperature, which is a post-treatment process, and the substrate 103 is moved to the heat wall part 110. ) Is subjected to the deposition process as described above.

After the annealing and deposition process, the annealing finished substrate 103 is discharged through the loading part of the chamber 200, receives a new substrate and fixes it to the substrate holder 102, and then mounts the substrate heater 101. . Subsequently, the newly introduced wafer is rotated again by rotating the rotating shaft 220, and the substrate 103 which has been pretreated is subjected to a deposition process, and the substrate 103 which has been deposited is subjected to a post treatment annealing process. Continue the rotation process repeatedly.

On the other hand, the thermal insulation material 213 of the substrate holder 210 is a pre-treatment process, the deposition process, and the post-treatment process is performed under different temperatures, so that the conductive heat generated during each process does not affect other processes. It serves to block. In addition, the heat dissipation plate 230 formed between the heat wall part 110 and the substrate holder 102 blocks the radiant heat so that the radiant heat generated from the heat wall part 110 does not affect other substrates that perform the pretreatment process and the post-treatment annealing process. It plays a role.

When the semiconductor thin film deposition apparatus using the thermal wall deposition method of the present invention described above is processed simultaneously with the pre-treatment thermal process, the deposition process using the thermal wall deposition method, and the post-treatment process for annealing, it is possible to greatly reduce the time loss and greatly improve productivity. There is an advantage.

Although the technical idea of the semiconductor thin film deposition machine using the thermal wall deposition method of the present invention has been described together with the accompanying drawings, this is for illustrative purposes only and is not intended to limit the present invention. In addition, it is obvious that any person skilled in the art can make various modifications and imitations without departing from the scope of the technical idea of the present invention.

Claims (8)

A thermal wall deposition apparatus comprising: a substrate holder capable of holding and heating a substrate to be processed; and a thermal wall portion for receiving and depositing a substrate in a state held by the substrate holder and a deposition material, The substrate holder is a plurality of holders that can be simultaneously put into a plurality of processes, And the hot wall evaporator further comprises holder moving means for moving the plurality of holders in a process order. The method of claim 1, And a heat sink disposed between the plurality of holders and the heat wall portion to block radiant heat from the heat wall portion. The method according to claim 1 or 2, And said holder moving means comprises a plurality of cantilevered holder holding arms that extend radially from said rotation axis and said rotation axis to hold one or more holders, respectively. The method of claim 3, wherein Swivel surfaces of the plurality of holder holding arms are formed above the heat wall portion, And the heat dissipation plate is a disc provided between the turning surfaces of the plurality of holder holding arms and the heat wall portion, and the direct portion of the heat wall portion is cut out. The method of claim 4, wherein And said holder holding arm further comprises elevating means for elevating said holder. The method of claim 3, wherein And said plurality of holder holding arms have discontinuous portions mediated by a heat insulating material. The method of claim 5, In accordance with a predetermined program, the overall operation of the hot wall evaporator including the timing and position of the holder holding arms, the timing and position of the holder lifting by the elevating means, and the timing and temperature of heating the substrate in the holder. Hot wall evaporator characterized in that it further comprises a controllable controller. The method of claim 7, wherein And a plurality of holders configured to circulate the semiconductor thin film deposition step by step.