JPS6266264A - Photoconductive body - Google Patents

Abstract

PURPOSE:To obtain the titled body having an excellent electrostatic characteristics and a high spectral sensitivity over a broad wavelength range by laminating a microcrystalline silicon (muc-Si) and an (a-Si) layer on the titled body, and by specifying the thicknesses of each of said layers. CONSTITUTION:The inhibiting layer 24a of the electrostatic charge implantation is composed of P-type or N-type semiconductor contg. at least one atom selected among a carbon, a nitrogen and a oxygen atoms. The photoconductive layer 25 is prepared by laminating the 1st layer 25a composed of the microcrystalline silicon, the 2nd layer 25b composed of the amorphous silicon and the 3rd layer 25c composed of the amorphous silicon contg. at least one atom selected among the carbon, the nitrogen and the oxygen atoms on a substrate body 12 in order. The thickness of the 1st layer 25a is 1-10mum, the thickness of the 2nd layer 25b is 0.1-5mum, and the thickness of the 3rd layer 3c is 3-80mum.

Description

[Detailed description of the invention]

[Technical Field of the Invention] The present invention relates to a photoconductor for forming an electrostatic latent image in an image forming apparatus such as an electrophotographic apparatus. [Technical background of the invention and its problems] In recent years, with the diversification of functions and models of image forming devices such as electrophotographic devices, cadmium sulfide (CdS) and zinc oxide (ZnO) are being used as photoconductive materials. , selenium (:S
e), inorganic materials such as selenite alloy [5e-To], and organic materials such as poly-N-vinylcarbazole (hereinafter referred to as PVCz 9) and trinitrofluorene (hereinafter referred to as τNF) have been developed. ing. However, among the photoconductive materials, selenium (Ss),
Since cadmium sulfide [CdS] is a material that is inherently harmful to the human body, the manufacturing equipment becomes complicated due to safety measures and manufacturing costs increase.
Selenium (Ss) must be recovered after use, further increasing costs. Selenium-tellurium alloy (Ss-Ta) has a low crystallization temperature of about 65[:'C], so it easily crystallizes, and during repeated copying, residual charges are generated in the crystallized portion. This tends to cause problems such as staining the image.
In the end, there is a drawback that it is not possible to achieve a long service life. Due to its physical properties, zinc oxide [ZnO] is prone to oxidation-reduction and is significantly affected by environmental conditions such as temperature and humidity, resulting in unstable image quality and poor reliability. In addition, organic materials such as (PVCZ) and (TNF) have poor thermal stability and wear resistance, making it difficult to extend their service life, and recently they have been suspected of being carcinogenic. For this reason, in recent years, in order to solve the above drawbacks, it is non-polluting, does not require recovery treatment, has a high surface hardness, has excellent abrasion resistance and impact resistance, and is even more effective in the visible light range than before. Amorphous silicon (hereinafter referred to as a) has high spectral sensitivity.
-5i) is being studied for application to photoconductive materials such as photoreceptors. Specifically, since the photoreceptor is required to have high resistance and high spectral sensitivity, in order to satisfy both of these characteristics, a conductive support and (a-3i)
A charge injection prevention layer is provided between the photoconductive layers, which provides the photoreceptor with an excellent charge retention ability and has excellent effects on optical fatigue characteristics, cycling characteristics, etc., and (a-5i) photoconductive A laminated type (a-3
i) A photoreceptor has been developed. However, when (a-5i) was formed by glow discharge decomposition using a gas containing silane (Si3), (a-5i)
3i) There is a problem in that the electrical properties and optical properties vary greatly depending on the amount of hydrogen atoms (H) incorporated into the film. That is, (a-5i) As the amount of water atoms (H) taken into the eye increases, the optical bandgap becomes larger and the resistance becomes higher. Sensitivity decreases, and when used in a laser beam printer using a semiconductor laser, fogging, crushed type, afterimages, density unevenness due to interference fringes, etc. may occur, making the printer unusable. SiHz) n) bond and (SiH
2] Those with a bond structure such as a bond (a-5i
) becomes dominant in the film, and as a result, (SiH) bonds are broken, structural defects such as dangling bonds and voids increase, and photoconductivity deteriorates. On the other hand (a
-5i) When the amount of hydrogen atoms (H) incorporated into the film decreases, the spectral sensitivity to long wavelength light increases, but on the other hand, the optical bandgap decreases, resulting in low resistance, and the amount of hydrogen atoms (H3) increases. Since dangling bonds are no longer compensated for, the mobility and lifetime of the generated carriers are reduced, resulting in a decrease in photoconductivity and the problem of being unable to be used as a photoreceptor. As a method to increase the spectral sensitivity to wavelength light, a method has been implemented in which a gas containing silane (Si) and a germane gas [Getl, ] are mixed and a film with a narrow optical band gap is formed by a glow discharge decomposition method. However, since the optimum support temperature during glow discharge generally differs by 40 to 50 degrees between silane (Si)-containing gas and germane (GeH4) gas, structural defects are likely to occur in the formed film. However, the photoconductivity deteriorates, and furthermore, when germane gas (GeH4) is oxidized, it becomes toxic, making the waste gas treatment complicated.On the other hand, in recent years, optical The forbidden band width is about 7 (e
Compared to (a-3i), which is V), microcrystalline silicon (hereinafter referred to as μc- 5i) has been developed. In other words, this (μc-3L) corresponds to non-single crystal silicon, but when X-ray diffraction measurements are performed, as shown by the dotted line in Figure 4, (a-3i) is amorphous, so a halo appears. (μ
c-3i), as shown by the solid line in Figure 4, [20] is 27~
28.5 (degrees).On the other hand, polycrystalline silicon has a dark resistance of 1.
(μc-3i) has a high resistance of 1011 (Ω·]) or more, whereas it is less than 0.06 [Ω·]. Due to the above-mentioned characteristics, (μ'c-S i ) is distinguished from other non-single-crystal silicon (a-3i) and polycrystalline silicon, and its structure has a grain size of about several tens of nanometers or more. It is thought that it is formed by aggregation of microcrystals. In order to manufacture such (μc-3i), sputtering, glow discharge decomposition method, etc. are used like (a-3L), but (
a-3i) If the temperature of the conductive support on which the film is formed is set higher than the waiting time, or if the high frequency power is increased, the formation becomes easier. That is, by raising the temperature of the support and increasing the high-frequency power, the flow rate of the raw material silane (Sil-containing gas) can be increased, and as a result, the film formation rate is increased and (μc-5i) is more likely to be formed. Furthermore, if a gas diluted with hydrogen (H), including higher-order silane gases such as silane [5IH4] and disilane (Si116), is used as a raw material, (μc-5i) can be formed more effectively. In addition, in the (μc-3i) layer to be formed, hydrogen (H
) content increases, the degree of crystallinity increases, approaching polycrystalline silicon, and while the dark resistance decreases, the bright resistance increases, and eventually it no longer exhibits photoconductivity, so the dark resistance and bright In order to obtain excellent light conductivity with well-balanced resistance, hydrogen (
Doping hydrogen (H) into this (μc-3i) layer, which preferably contains 0.1 to 30 [atomic %] of hydrogen (H), is performed using silane (SiH4) or disilane (sig
Silane (Sil containing gas such as ns) and hydrogen gas [H2] as a carrier gas are introduced into the reaction vessel to perform glow discharge, or halogens such as silicon tetrafluoride (SiF*) and trichlorosilane (SICI24) are introduced into the reaction vessel. The reaction may be performed using a mixed gas of silicon oxide and hydrogen gas [H2] as a raw material, or furthermore, a mixed gas of a silane (Sj)-containing gas and a silicon halide may be used as a raw material.Furthermore, (μc- In the 3i) layer, hydrogen atoms (H) are added to prevent charge injection from the support to the photoconductive layer, to improve photosensitivity characteristics, to make it i-type, and to increase resistance. Other impurities are doped, and these impurity elements include boron (B) to make it p-type,
Aluminum [Elements in group Ⅰ of the periodic table such as Al1 are suitable; on the other hand, to make it n-type, elements in group Ⅰ of the periodic table such as nitrogen (N) and phosphorus (Pl) are suitable. μc-Si
) to increase the dark resistance and enhance the photoconductive properties of nitrogen [N], carbon [C], and oxygen.

It is desirable to dope at least one kind of [0]. If this is done, these elements will precipitate at the grain boundaries of (μc-5i) and also act as terminators of dangling bonds of silicon (Si). This is because the density of states existing in the forbidden cloth between the bands is reduced. Since it has the above-mentioned characteristics, attempts have been made to use (μc-3i) in the photoconductive layer for laser printers, etc., but the photoconductive layer was formed only with (μc-3i). In case. Because the dark resistance is low, it is difficult to retain charge, and the amount of light absorption is small, a considerable thickness is required, and the film formation time is longer than that of (a-3i), so the cost is low. This creates a new problem, which is that it leads to an increase in the price. [Object of the Invention] This invention was made based on the above circumstances, and although it has excellent charging characteristics due to its ability to maintain high resistance, it also has high spectral sensitivity characteristics over a wide wavelength range, and furthermore, it has clear and sharp characteristics. It is an object of the present invention to provide a photoconductor that can display a high-quality image, is easy to manufacture, and can reduce costs. [Summary of the Invention] In order to achieve the above object, the present invention uses microcrystalline silicon (hereinafter referred to as μc-3i) as a photoconductive layer layered on a conductive support via a charge injection prevention layer.
and (a-8L), it is possible to obtain a photoconductor having excellent charging characteristics and high spectral sensitivity characteristics over a wide wavelength range. [Embodiments of the Invention] First, in giving a detailed explanation of the invention, the principle of the invention will be described. That is, as mentioned above, this invention
A layer with high dark resistance and sensitivity in the visible light region but no sensitivity around near infrared rays (a-3i) and a layer with sensitivity around visible light and near infrared rays but low dark resistance (μc-3L) Due to the photoconductive layer, light in the vicinity of visible light is mainly absorbed by (a-3i), and light that cannot be completely absorbed is absorbed by (μc-3
L) is absorbed, while near-infrared light is mainly absorbed by (μ
By absorbing c-5i), the drawbacks of each are supplemented, and the photoconductor is intended to have high spectral sensitivity characteristics over a wide range from the visible light region to the near-infrared region. An embodiment of the present invention will be described below with reference to FIGS. 1 to 3. Reaction vessel of glow discharge device (10) (
Inside 11) is a heater (
13) and is provided with a support rod (16) that is rotated by a motor (14). Further, the support body (16) is surrounded by a cylindrical electrode (18) connected to a high frequency power source (17) of 13.56 [MHz], and silane gas (SiH4) is placed above the support rod (16). , diborane gas (Ba H@), hydrogen gas ()! 1 ], a gas introduction valve (21a) is installed in the gas supply system (20) which has a large number of gas cylinders (19a)...(19n) and a gas mixer (20a) so that methane gas (CH4) etc. can be supplied as needed. Gas inlet pipes (2 pieces) are provided which are connected via the gas cylinders (19a)...(19n).
...(9n) is a pressure regulator. Furthermore, (22) is an exhaust valve connected to an exhaust device (not shown) that exhausts the inside of the reaction vessel (11), and (23) is an exhaust valve that is connected to an exhaust device (not shown) that exhausts the inside of the reaction vessel (11).
1) It is a vacuum gauge that measures the atmospheric pressure inside. Further, (24) is a photoreceptor of an electrophotographic device which is a photoconductor, and a charge injection prevention layer (24a) and a first layer (24a) which is a charge generation layer for near-infrared light are sequentially formed on a drum-shaped substrate (12). 25a), a second layer (25b) which is a charge generation layer for visible light, and a third layer (25c) for holding and transporting charges, and a surface layer (25); 24b) are laminated. When forming the photoreceptor (24) in the glow discharge device (10), the drum-shaped substrate (12) is set on the support rod (16), and then the inside of the reaction vessel (11) is evacuated to a predetermined atmospheric pressure. When the valve (22) is opened, the exhaust gas is treated by an exhaust device (not shown) and the drum-shaped substrate (12) is heated to a predetermined temperature by the heater (13). Then, a required predetermined gas is introduced into the reaction vessel (11) from the gas supply system (20) via the gas introduction pipe (21). While maintaining the gas pressure in the reaction vessel (11) constant, a high-frequency power source (17) applies the necessary power between the drum-shaped substrate (12) and the cylindrical electrode (18) for a predetermined period of time, thereby forming the charge injection prevention layer. A film (24a) is formed. Next, in the same reaction vessel (11), the temperature of the drum-shaped substrate (12) and the introduced gas, as well as the film forming conditions such as the amount of electric power and the time of applying electric power, are sequentially reset to predetermined values to prevent charge injection. layer(
24a) The first layer (25a) to the third layer (25c) of the photoconductive layer (25) are formed on the photoconductive layer (25), and each film forming condition is set to predetermined conditions in the same reaction vessel (11). Redo it,
A surface layer (24b) is formed on the photoconductive layer (25) to complete the formation of the photoreceptor (24). Next, a first concrete example of the operation of this embodiment will be described. [Specific Example 1] First, the drum-shaped base (12) is set on the support (16), the exhaust valve (22) is opened, and the exhaust device (not shown) is turned on.
The interior of the reaction vessel (11) is evacuated to below 0.1 Torrl, and the drum-shaped substrate (
12) to 320% ('Cl). Next, from the gas supply system (2G), 1.1% of methane gas [C] was added to the flow rate of silane gas (SiH4) through the gas introduction pipe (21), Diborane gas [B□us] 5XIQ'''
3 [%] Hydrogen gas (11,) was introduced into the reaction vessel (11) at a ratio of 50 (%), and the pressure inside the reaction vessel (11) was reduced to 0.5 ( Torr), the drum-shaped substrate (12) is rotated by the motor (14).
150 (1) by high frequency power supply (17) while rotating
1) Power is transferred to the drum-shaped base (1z) and the cylindrical mold ff1.
(1B) is applied for 45 minutes to form a charge injection prevention layer (24a) made of (a-Si), after which the supply of electric power and various gases is stopped. Subsequently, a charge injection prevention layer (24
a) In order to form a photoconductive layer (25) thereon, silane gas (Si
H4) For the flow rate, diborane gas (B2HJ is 7X10
-'' [%], hydrogen gas [H3] is introduced into the reaction vessel (11) at a ratio of 700 [%], and the pressure inside the reaction vessel (11) is reduced to 1. 0 (Tor
r) while rotating the drum-shaped substrate (12), 500 (W) power was applied between the drum-shaped substrate (12) and the cylindrical electrode (step 8) for 2 hours using the high-frequency power source (17). , (μc-3i) with a film thickness of 5[-]
A layer (25a) is deposited, and then silane gas [SiH, )
dibora gas (B, II,) with respect to the flow rate lXl0-”(
%], hydrogen gas [H2] was introduced into the reaction vessel (II) at a ratio of 100C%], and the pressure inside the reaction vessel (11) was reduced to 0.
．． 5 (Torr), apply a power of 120 (W) between the drum-shaped substrate (12) and the cylindrical electrode (18) for 1 hour. A layer (25b) is deposited. Furthermore, compared to the flow rate of silane gas (SiH,), the flow rate of methane gas (
C) 20 [%] of 14), 100% of hydrogen gas [H2]
[%] into the reaction vessel (11), and while maintaining the pressure inside the reaction vessel (11) at 0.5 (Torr), a power of 120 (W) was applied to the drum-shaped substrate (12) and After applying power between the cylindrical electrodes (18) for 4 hours to form a third layer (25c) made of (a-5i) and having a film thickness of 12 [μs], the supply of electric power and various gases is stopped. Next, nitrogen gas [N2] was supplied into the reaction vessel (11) from the gas supply system (20) at a rate of 6% relative to the flow rate of silane gas (SiH4).
00%] into the reaction vessel (11), and the pressure inside the reaction vessel (11) is reduced to 0 using an exhaust device (not shown).
．． 8 (Torr) while maintaining the drum-shaped base (12).
While rotating, the high frequency power supply (17)
(W) power is applied to the drum-shaped base (12) and the cylindrical electrode (
18) for 3 minutes, and (a-
A surface layer (24b) consisting of 3i) is formed, and finally the supply of electric power and gas is stopped to complete the production of the photoreceptor (24). The photoreceptor (24) for positive charging with a total film thickness of 20 [μs] obtained in this manner is referred to as (sample a), and the first layer (25b) of the photoconductive layer (25) (μc− 5i
) was measured by X-ray diffraction method, and the results were that the crystallinity was 60% and the grain size was about 35cm. For comparison, the photoconductive layer (25) of (sample a) was used as the second layer (25b).The film thickness was 15 (tna) formed for 5 hours under the film forming conditions of (a-5L) II. The photoconductive layer (25) of (sample a) was replaced with one consisting only of (a-Si) Il[ containing boron (B) (sample b), while the photoconductive layer (25) of (sample a) was replaced with a third layer (2Sc). The film thickness was 15 (
A sample C was produced in which sample s) was replaced with one consisting only of the (a-3i) film containing carbon (C). The spectral sensitivities of each sample obtained in this way were measured, and as shown in Figure 3 (sample b), (
Compared to sample C), sample a) has a wavelength of 350 to 7
50 Cnya3 (visible light region), the sensitivity is about the same as that of 50 Cnya3, but in the near-infrared region it has high sensitivity, making it possible to apply it to laser beam printers and the like. In addition, each sample was given 6.5 [kv] by corona discharge.
The surface potential when applying a voltage of Characteristic evaluation results were obtained. [Table 1] Characteristic evaluation of photoreceptor The residual potential of (sample C) after exposure is 200
(V). Furthermore, as a result of actually installing the photoreceptor of each sample in a copying machine and forming an image, we compared the image quality, and found that (sample B) had a low image density and was blurry, while (sampling C) had noticeable fogging. On the other hand, (sample a) does not have the image defects that occur with (sample b) and (sample C), and provides a clear image. was gotten. Next, both optical bodies of each sample were attached to a laser printer and images were formed (sample B) and (sample C).
), the image density unevenness and fogging occur due to interference fringes caused by the light reflected on the surface of the drum-shaped substrate (12) and the light reflected on the surface layer (24b) because it is not absorbed completely in the layer. In contrast, in (sample a), image defects due to interference fringes did not occur, and a clear image with high resolution and high contrast was obtained. Next, other specific examples will be described. [Specific Example 2] This [Specific Example 2] is based on the first layer (2) of the above-mentioned [Specific Example 1].
Only the film forming conditions of 5a) are changed and carbon [c] is doped, and the rest is exactly the same as [Specific Example 1]. That is, in this specific example, after forming the charge injection prevention layer (24a) in [Specific Example 1], methane gas [C
H4] 0.3L%], diborane gas (ozoi) 7
The first layer (25a) was formed by introducing X10-' (%) hydrogen gas (US) at a ratio of 700 [%]. ．．
When a voltage of 5 [kv] was applied, (sample a)
Since the dark resistance is increased and the photoconductive properties are improved compared to the conventional one, the 1-surface type is improved by within 20 (%), and good images can be obtained even when actually installed in a copying machine or a laser printer. [Specific Example 3] This [Specific Example 3] is similar to [Specific Example 2] [Specific Example 1]
Nitrogen (N) which changes only the film forming conditions of the first layer (25a)
The other aspects are the same as in [Specific Example 1]. That is, after forming the charge injection prevention layer (24a), nitrogen gas [N7] was added to 2% of the silane gas (SiH4) flow rate.
], diboragay y' (axHs) is 7 X 1O-7 (
%], hydrogen gas [N2] was introduced into the reaction vessel (11) at a ratio of 700 [%], and the first layer (25a) was formed. 6. Corona discharge was applied to the photoreceptor thus obtained.
When a voltage of 5 [kv] was applied, the dark resistance was larger compared to (sample a) and the photoconductive properties were improved, so the surface potential was improved by within 25 [%], and the image with the actual device was also [
The results were good as in Specific Example 2]. With this configuration, the first layer (
Since 25a) is formed of (μc-5i) and the second layer (25b) is formed of (a-Si), (
a-3i), it has higher sensitivity in the visible light region and near-infrared region;
5L) can maintain a high dark resistance compared to those consisting only of
Not only can image quality be improved, but it can also be applied to laser printers and the like. In addition, dark resistance is low and light absorption is small (μ
When only the first layer (25a) consisting of c-5i) is used as a charge generation layer, the film thickness must be increased considerably in order to obtain the required dark resistance and light absorption amount, and the film formation I'L that slow speed (μc-3i) requires longer film formation time and increases cost.
In addition to the (μc-3i) layer, the (a-3
By using the second layer (25b) consisting of i), the film thickness can be made thinner, and the cost can also be reduced. Furthermore, if this photoreceptor (24) is used, since the material is harmless to the human body, there is no need to take special safety measures during manufacturing, and there is no need to treat waste gas, and the photoreceptor can be collected after use. There is no need for it, and it is possible to reduce costs. On the other hand, the charge injection prevention layer (24a) is doped with carbon (C) in addition to doping with boron (CB) to make it n-type.
Also doped with boron [B], the surface of the film becomes uneven and the drum-shaped substrate (12)
However, the adhesion between the
When carbon (C) is added, a film is formed to fill these irregularities, improving adhesion to the drum-shaped substrate (12) and preventing peeling, and due to the insulating properties of carbon [C] itself. This also contributes to improving the insulation properties of the charge injection prevention layer (24a). Furthermore, if the surface Jla (24b) is provided as in this embodiment, the third layer (25c) can also be protected. Note that the present invention is not limited to the above-mentioned embodiments, and can be modified in various ways.1 For example, impurities such as elements in group 1 of the periodic table may be added to each layer of the photoconductive layer to change the characteristics. The charge injection prevention layer may be of any type, and when the photoconductor surface is positively charged, a layer from group Ⅰ of the periodic table may be used to prevent electron injection from the support. On the other hand, when the photoconductor surface is to be negatively charged, it is doped with an element from group V of the periodic table to prevent the injection of holes from the support. It may be n-type, and its structure may be (a-Si) or (μc-3i). (μc-3L) has better absorption of light such as laser light, does not cause reflected light from the support, and can reliably prevent interference fringes caused by reflected light on the surface.
Temperature unevenness can be prevented and clearer images can be obtained. In addition, doping to improve adhesion with the support or insulation is not limited to carbon [C], but also nitrogen (N) or oxygen.

It may be [0], and
The thickness is also arbitrary, but preferably 100 [people] to 10 (m).Furthermore, the manufacturing method of each layer is also optical CV.
D method, sputtering method, etc. may be used, and the structure of the photoconductor may be one in which a charge transport layer and a charge generation layer are sequentially layered directly on a support. Since it is said that the thickness is preferably 0.1 (m) to 10 [μs], as in the present invention, the (μc-5L) layer and the (μc-5L) layer and (
In the case of a two-layer a-3L) layer, the thickness of the (a-5i) layer is about 0.1 [m] to 5 [immediate] depending on the ratio of each layer, (μc-3i) The thickness of the layer may be within the range of about 1 [-] to 10 (um), and the charge transport layer may be one that allows carriers generated in the charge generation layer to efficiently reach the support side (a- SL) or (μc-3i), and in order to increase the dark resistance and improve the charging ability, it is necessary to use any of the elements of group Ⅰ of the periodic table or group Ⅰ of the periodic table. It is preferable that one side is lightly doped, and furthermore, in order to improve charging ability and have both charge transport and potential holding functions, carbon (C), nitrogen (N), oxygen [ It is desirable to contain at least one of the following. Moreover, if the film thickness is too thin or too thick, it will not function satisfactorily, and is preferably 3 to 80 mm thick. [Effects of the Invention] As explained above, according to the present invention, the charge generation layer of the photoconductive layer is a layer made of (μc-Si) and (a-3i).
By stacking layers consisting of (μc-5i
) The required dark resistance and light absorption amount can be obtained with a thin film thickness, and the manufacturing cost can be reduced. In addition, high spectral sensitivity can be obtained in the visible light region and the near-infrared region, and image quality can be improved, and application to laser printers and the like is fully possible. In addition, it can be manufactured safely using a closed system manufacturing equipment using a reaction vessel, and since the material is harmless to the human body, there is no need to install waste gas treatment equipment as in the past, making it easy to use. There is no need to collect the photoreceptor afterward, and as a result, economical efficiency can be improved.

[Brief explanation of drawings]

Figures 1 to 3 show one embodiment of the present invention.
Figure 2 is a schematic explanatory diagram showing the film forming apparatus, Figure 2 is a partial sectional view showing the photoreceptor, Figure 3 is a graph showing its spectral sensitivity characteristics, and Figure 4 is (μc-3i) and (a -3L) is a graph showing X-ray diffraction. 10...Glow discharge device, 11...Reaction container, 1
2... Drum-shaped base, 13... Heater, 16
...Support, 17...High frequency power supply, 18
... Cylindrical electrode, 20 ... Gas supply system, 24
... Photoreceptor, 24a... Charge injection prevention layer, 24b... Surface layer, 25... Photoconductive layer, 25a... First layer, 25b... Second
Layer, 25c...Third layer

Claims (1)

[Claims] 1. A charge injection prevention layer and a photoconductive layer are provided on a conductive support, in which the charge injection prevention layer contains at least one atom of carbon, nitrogen, and oxygen. or n-type semiconductor, and the photoconductive layer includes a first layer made of microcrystalline, a second layer made of amorphous silicon, and at least one atom of carbon, nitrogen, and oxygen. 1. A photoconductor comprising a third layer made of amorphous silicon that is successively laminated on the support. 2. The thickness of the first layer is 1 [μm] to 10 [μm], the thickness of the second layer is 0.1 [μm] to 5 [μm], and the thickness of the third layer is 3 [μm]. The photoconductor according to claim 1, wherein the photoconductor has a diameter of 80 [μm] to 80 [μm]. 3. Each of the first to third layers corresponds to periodic table I.
3. The photoconductor according to claim 1, which contains an atom of Group II or an atom of Group V of the periodic table.