JPS6266262A - Photoconductive body - Google Patents

Abstract

PURPOSE:To obtain the titled body having an excellent electrostatic characteristics and a high spectral sensitivity over a broad wavelength range by laminating a microcrystalline silicon (muc-Si) and a (a-Si) layer on the titled body, and by specifying the thicknesses of each of said layers. CONSTITUTION:The inhibiting layer 24a of the electrostatic charge implantation is composed of P-type or N-type semiconductor contg. at least one atom selected among a carbon, a nitrogen and a oxygen atoms. The photoconductive layer 25 is prepared by laminating the 1st layer 25a composed of an amorphous silicon contg. at least one atom selected among the carbon, the nitrogen and the oxygen atoms, the 2nd layer 25b composed of the amorphous silicon and the 3rd layer 25c composed of the microcrystalline silicon. Thus, the thickness of the 1st layer 25a is 3-80mum, the thickness of the 2nd layer 25b is 0.1-5mum and the thickness of the 3rd layer 25c is 1-10mum.

Description

[Detailed description of the invention]

[Technical Field of the Invention] The present invention relates to a photoconductor that forms an electrostatic latent image in an image forming apparatus such as an electrophotographic apparatus. [Technical background of the invention and its problems] In recent years, with the diversification of functions and models of image forming devices such as electrophotographic devices, cadmium sulfide (CdS) and zinc oxide [Zn0] have been used as photoconductive materials. , selenium (Se
A wide variety of materials have been developed, including inorganic materials such as l, selenite alloy (Ss-Te), and organic materials such as poly-N-vinylcarbazole (hereinafter referred to as PVCz) and trinitrofluorene (hereinafter referred to as TNF). ing. However, among the photoconductive materials, selenium (Se)
, cadmium sulfide (CdS), etc., are materials that are inherently harmful to the human body, so the manufacturing equipment becomes complicated and the manufacturing cost increases due to safety measures, but they must be recovered after use. Selenium (Ss) is required, which further increases the cost. Selenium-tellurium alloy [5eTa) has a low crystallization temperature of approximately 65°C (65°C), so it easily crystallizes, and during repeated copying, a residual charge is generated in the crystallized portion, causing the image to deteriorate. Problems such as staining are likely to occur, and a long life cannot be achieved after all. Due to its physical properties, zinc oxide (ZnO) is susceptible to oxidation-reduction and is significantly affected by environmental conditions such as temperature and humidity, resulting in unstable image quality and poor reliability. Furthermore, organic materials such as (PVCz) and (TNF) have poor thermal stability and wear resistance, making it difficult to extend their service life, and recently they have also been suspected of being carcinogenic. Therefore, in recent years, in order to solve the above-mentioned drawbacks, it is non-polluting and does not require collection treatment, has a high surface hardness and has excellent abrasion resistance and impact resistance, and is also higher in the visible light range than before. Amorphous silicon with spectral sensitivity (hereinafter a-
3i) is being studied for application to photoconductive materials such as photoreceptors. Specifically, since the photoreceptor is required to have high resistance and high spectral sensitivity, in order to satisfy both of these characteristics, the conductive support and (a-3i) photoconductive layer are In between, a charge injection prevention layer is provided which gives the photoreceptor excellent charge retention ability and has excellent effects on optical fatigue characteristics and cyclic characteristics. Laminated type (a-3i) with layered charge retention layers
) Photoreceptors have been developed. However, when (a-5i) is formed by a glow discharge decomposition method using a gas containing silane (Si), (a
, -5i) There is a problem in that the electrical characteristics and optical characteristics vary greatly depending on the amount of hydrogen atoms (H) incorporated into the film. In other words, (a-3i) As the amount of hydrogen atoms (H) incorporated into the film increases, the optical bandgap becomes larger and the resistance becomes higher. When used in a laser beam printer using a semiconductor laser, fogging, crushed type, afterimages, uneven density due to interference fringes, etc. may occur, making the printer unusable.
Depending on the film formation conditions, ((SiH□),] bond or (Si
Something with a bond structure like l(s) bond is
(a-5i) becomes dominant in the film, resulting in (Si)1
) Bonds are broken, structural defects such as dangling bonds and voids increase, and photoconductivity deteriorates. On the other hand (a-5i) Hydrogen atoms [H
] decreases, the spectral sensitivity to long wavelength light increases, but at the same time the optical bandgap decreases, resulting in lower resistance, and hydrogen atoms (H) no longer compensate for dangling bonds, resulting in 1. There are problems in that the mobility and life of the carrier are reduced, and the photoconductivity is also deteriorated, making it impossible to use it as a photoreceptor. Therefore, as a method to increase the spectral sensitivity to long wavelength light, there is a method of mixing a gas containing silane (SL) and germane gas (GeH4) and forming a film with a narrow optical bandgap by glow discharge decomposition. However, the optimum support temperature during glow discharge is generally 4 for silane (Si)-containing gas and germane (GsH,) gas.
Since the temperature differs by 0 to 50 degrees, structural defects are likely to occur in the formed film, resulting in poor photoconductivity, and furthermore, if germane gas (Ge14) is oxidized, it may become toxic. Therefore, the waste gas treatment becomes complicated. On the other hand, in recent years, the optical bandgap width is approximately 1.7 (eV3) compared to (a-3i), and the optical bandgap width is small, and it is sensitive to long wavelength light near the near-infrared region, and is sensitive to structural defects. Microcrystalline silicon (hereinafter referred to as μC-3i) has been developed, which has a small amount of silicon and high mobility.In other words, this (μC-5i) belongs to non-single-crystal silicon, but when X-ray diffraction measurements are performed, As shown by the dotted line in Figure 4, (a-3i) is amorphous, so only a halo appears and no diffraction pattern is observed, whereas (μ
C-5L) has [2θ] of 27~27 as shown by the solid line in Figure 4.
It shows a crystal diffraction pattern around 28.5 degrees C]. On the other hand, polycrystalline silicon has a dark resistance of 1
0@[Ω・l] or less, whereas (μC-5i) has a height resistance of 10”[Ω・mouth 3 or more. Due to the above-mentioned characteristics, (μ(1 knee Si) It is distinguished from other non-single-crystal silicon (a-5i) and polycrystalline silicon, and its structure is thought to be formed by an aggregation of microcrystals with a grain size of about several dozen or more. In order to manufacture such (μC-5i), sputtering, glow discharge decomposition method, etc. are used as in (a-5i), but (a
-3i) It becomes easier to form if the temperature of the conductive support on which the film is formed is set higher than the waiting time, or if the high frequency power is increased. That is, by raising the temperature of the support and increasing the high-frequency power, the flow rate of the raw material silane [Si]-containing gas can be increased, and as a result, the film formation rate is increased and (μC-5j, ) is more likely to be formed. Because it will be. Furthermore, if a gas diluted with hydrogen (H), including a higher-order silane gas such as silane (SiH4) or disilane (Sin He), is used as a raw material, (μC-3i) can be more effectively formed. In addition, in the (μC-5L) layer to be formed, hydrogen (H
) content increases, the degree of crystallinity increases, approaching polycrystalline silicon, and while the dark resistance decreases, the bright resistance increases, and eventually it no longer exhibits photoconductivity, so the dark resistance and bright In order to obtain excellent photoconductivity with balanced resistance, it is desirable that the (μC-3L) layer contains 0.1 to 30 g% of hydrogen (H). Hydrogen (H) doping to the μC-5i) layer is performed using silane (s x H4) or disilane as a raw material.
/ Disilane (SL) containing gas such as (Si, H,) and hydrogen gas [H2] as a carrier gas are introduced into a reaction vessel to perform glow discharge, or silicon tetrafluoride [
The reaction can be carried out using a mixed gas of silicon halide and hydrogen gas (H2) such as 5iFJ or trichlorosilane (SiCL) as a raw material, or furthermore, the reaction can be carried out using a mixed gas of silane (Sil-containing gas and silicon halide) as a raw material. Furthermore, in the (μC-9i) layer, it is possible to prevent charge injection from the support to the photoconductive layer, or to improve the photosensitivity characteristics, or to make it i-type and increase the resistance. Therefore, the hydrogen atom (
In addition to H), impurities are doped, and in order to make the material p-type, elements from group Ⅰ of the periodic table, such as boron [B] and aluminum [AQ], are suitable.
On the other hand, in order to make the material n-type, elements of group Ⅰ of the periodic table, such as nitrogen [N] and phosphorus (P), are suitable. Also, (μC-3i)
Nitrogen [
N], carbon [C], and oxygen

It is desirable to dope at least one kind of [0]. If this is done, these elements will precipitate at the grain boundaries of (μC-5i) and also act as terminators of dangling bonds of silicon (Si). This is because the density of states existing in the forbidden band between bands is reduced. Since it has the above-mentioned characteristics, attempts have been made to use (μC-3i) in the photoconductive layer for laser printers, etc.;
If it is formed only with μC-3i), it has a low dark resistance and poor charge retention, and also has a small amount of light absorption, so it must be quite thick, and (a-5L)
A new problem arises in that the film formation time is longer than that of the previous method, which leads to an increase in cost. [Object of the Invention] This invention was made based on the above circumstances, and although it has excellent charging characteristics due to its ability to maintain high resistance, it also has high spectral sensitivity characteristics over a wide wavelength range, and furthermore, it has clear and sharp characteristics. The object of the present invention is to provide a photoconductor that can obtain high-quality images, is easy to manufacture, and can reduce costs. [Summary of the Invention] In order to achieve the above object, the present invention uses microcrystalline silicon (hereinafter referred to as μC-3L) as a photoconductive layer layered on a conductive support via a charge injection prevention layer.
and (a-3i), a photoconductor having excellent charging characteristics and high spectral sensitivity over a wide wavelength range can be obtained. [Embodiments of the Invention] First, in giving a detailed explanation of the invention, the principle of the invention will be described. That is, as mentioned above, this invention
A layer with high dark resistance and sensitivity in the visible light region but no sensitivity near the near-infrared region (a-3L) and a layer with sensitivity in the visible and near-infrared region but low dark resistance (μC-3i) , due to the photoconductive layer, light in the vicinity of visible light is mainly absorbed by (a -5i), and the light that cannot be absorbed is absorbed by (μC
-5i) absorbs light, while near-infrared light is mainly absorbed by (μC-3i), thereby compensating for the drawbacks of each. The purpose is to provide a photoconductor with high spectral sensitivity characteristics over a wide range from the visible light region to the near-infrared region. An embodiment of the present invention will be described below with reference to FIGS. 1 to 3. Reaction vessel of glow discharge device (10) (
Inside 11) is a heater (
13) and is provided with a support body (16) which is rotated by a motor (14). Also, the area around the support (16) is energized by high frequency electricity of 13.56 [MHz]! It is surrounded by a cylindrical electrode (18) connected to (17), and above the support rod (16) there are silane gas (SiH,), diborane gas (B, H,), hydrogen gas [H□], methane gas ( It is connected via a gas introduction valve (21a) to a gas supply system (20) having a large number of gas cylinders (19a)...(19n) and a gas mixer (20a) so that CH4) etc. can be supplied as necessary. A gas introduction pipe (21) is provided. In addition, (8a)...(8n) are the valves of each gas cylinder (19a)...(19n), (9a)
...(9n) is a pressure regulator. Furthermore, (22) is an exhaust valve connected to an exhaust device I (not shown) that exhausts the inside of the reaction vessel (11), and (23) is a vacuum gauge that measures the atmospheric pressure inside the reaction vessel (11). be. Also (24)
1 is a photoreceptor of an electrophotographic device which is a photoconductor, and includes a charge injection prevention layer (24a) and a first layer (25) for charge retention or charge transport on a drum base (12).
a) and a second layer (25
b) and a third layer (2) which is a charge generation layer for near-infrared light.
A photoconductive layer (25) consisting of 5c) and a surface layer (24b) are laminated. Therefore, when forming the photoreceptor (24) with the glow discharge device W (10), the drum-shaped base (12) is attached to the support (16).
After setting the reaction vessel (11), the exhaust valve (22) is opened to bring the inside of the reaction vessel (11) to a predetermined pressure, and the exhaust gas is treated by the exhaust device (not shown), and the drum-shaped substrate (12) is heated by the heater (13). is heated to a predetermined temperature. Then, a required predetermined gas is introduced into the reaction vessel (11) from the gas supply system (2o) through the gas introduction pipe (21), and while maintaining the gas pressure in the reaction vessel (11) constant, high frequency The power supply (17) applies the necessary power between the drum-shaped substrate (12) and the cylindrical electrode (18) for a predetermined period of time to form a film of charge injection prevention 1 (24a).Subsequently, the same reaction vessel ( The charge injection prevention layer (2) is sequentially reset to predetermined film forming conditions such as the temperature of the drum-shaped substrate (12), the introduced gas, the amount of electric power, and the time of applying electric power in the drum-shaped substrate (11).
4a) The first layer (25a) to the third layer (25e) of the photoconductive layer (25) are formed on the photoconductive layer (25). Furthermore, each film forming condition is reset to the specified one in the same reaction vessel (11), a surface layer (24b) is formed on the photoconductive layer (25), and the formation of the photoreceptor (24) is completed. do. Next, a first concrete example of the operation of this embodiment will be described. [Specific Example 1] First, the drum-shaped base (12) is set on the support rod (16), the exhaust valve (22) is opened, and the exhaust device (not shown) is turned on.
The inside of the reaction vessel (11) is evacuated to 0.1 (Torr) or less, and the drum-shaped substrate (12) is heated to 320℃ (C1) by the heater (13). Via the introduction pipe (21), methane gas (CH,) was added at 20% and diborane gas (B1) was added at 1xlO- with respect to the flow rate of silane gas (Si14).
3C%] and hydrogen gas [H2] in a reaction vessel (
11) while rotating the drum-shaped substrate (12) with the motor (14) while maintaining the pressure inside the reaction vessel (11) at 0.5 (Torr) with an exhaust device (not shown). A power of 150 (W) is applied between the drum-shaped substrate (12) and the cylindrical electrode (18) for 45 minutes by a high-frequency power source (17) to form a film of charge injection prevention ff (24a) consisting of (a-3i). Do the following. After that, the supply of electric power and various gases is stopped, and then the charge injection prevention layer (24a)
A reaction vessel (1) is placed in order to deposit a photoconductive layer (25) thereon.
1) Silane gas (S, LH) is supplied from the gas supply system (20)
4] Methane gas (CH4) at 10% of the flow rate. Hydrogen gas [H2] is introduced into the reaction vessel (11) at an equal ratio, and the reaction vessel (11) is heated by an exhaust device (not shown).
While rotating the drum-shaped substrate (12) while maintaining the internal pressure at 0.5 (Torr), 200 [W] of power is applied to the drum-shaped substrate (12) and the cylindrical electrode (18) by the high-frequency power source (17). ) for 3 hours to form a first layer (25a) consisting of (a-3i) with a film thickness of 18 [μm], and then diborane gas (
5X10-' [%] of B2Ha) and an equal amount of hydrogen gas (US) were introduced into the reaction vessel (11) to form one reaction vessel (11).
11) While maintaining the internal pressure at 0.5 (Torr),
A power of 200 (W) was applied between the drum-shaped substrate (12) and the cylindrical electrode (18) for 30 hours to form a second layer (25b) consisting of (a-5i) with a thickness of 3 [μm]. Furthermore, silane gas (SillJ flow rate, hydrogen gas [H2
] was introduced into the reaction vessel (11) at a ratio of 600 [%], and while maintaining the pressure inside the reaction vessel (11) at 1.1 (Torr), a power of 400 (W) was applied to the drum-shaped substrate ( 12
) and the cylindrical electrode (18) for 2 hours, (μC-
After forming the third layer (25c) with a film thickness of 5 (uml), the supply of electricity and various gases is stopped. Next, silane gas (25c) is supplied from the gas supply system (20) into the reaction vessel (11). methane gas (CH,
) was introduced into the reaction vessel (11) at a ratio of 400 [%], and while the pressure inside the reaction vessel (11) was maintained at 0.6 [Torr] by an exhaust device (not shown), the drum-shaped substrate was While rotating the photoconductive layer (25), a high frequency power source (17) applied a power of 150 (W) for 5 minutes between the drum-shaped substrate (12) and the cylindrical electrode (18), and the photoconductive layer (25) was A surface layer (24b) consisting of a-3i) is formed, and finally the supply of electric power and gas is stopped to complete the production of the photoreceptor (24). The photoreceptor (24) for positive charging with a total film thickness of 18 [μm] obtained in this way is referred to as (sample a), and ( p C ) in the third layer (25c) of the photoconductive layer (25) -9
When the crystallinity and crystal grain size of i) were measured by X-ray diffraction method, the crystallinity was 60 [%] and the crystal grain size was about 40 [people].
The result was obtained. For comparison, the photoconductive layer (25) (sample a) was formed for 2.5 hours under the film forming conditions of the film (a-3i) used for the second layer (25b). Boron C film thickness 15 [μm]
While producing (sample b) containing only (a-5L) Ill containing B), (sample a)
The photoconductive layer (25) was used as the first layer (25a) (
The film was formed for 2.5 hours under the film forming conditions of a-3i). Contains carbon (C) with a film thickness of 15 [μm] (a-5L)
A sample C (sample C) consisting only of a membrane was manufactured. The spectral sensitivities of each sample obtained in this way were measured, and as shown in Figure 3 (sample b), (
Compared to sample C), sample a) has a wavelength of 350 to 7
50 (nm) (visible light region), but has high sensitivity in the near-infrared region, making it possible to apply it to laser beam printers and the like. In addition, the surface potential when a voltage of 6.5 (KV) was applied to each sample by corona discharge, the potential retention rate after 15 seconds, and the exposure amount to half the potential when exposed to light at 10 (gux-sec). As a result of the measurement, the characteristics evaluation results of the photoreceptor were obtained as shown in [Table 1]. [Table 1] Characteristic evaluation of photoconductor The residual potential of (sample C) after exposure is 200
(V). Furthermore, as a result of actually installing the photoreceptor of each sample in a copying machine and forming an image and comparing the image quality, it was found that (Sample B) had a low image density and was blurry, while (Sample C)
The fogging is noticeable, the resolution is low, and the characters etc. are crushed.
Furthermore, while it has the disadvantage of producing an afterimage, (
For sample a), (sample b), (sample C
), clear images were obtained without any image defects that occur with Next, the side light body of each sample was attached to a laser printer and images were formed (sample B) and (sample C).
), the image density unevenness and fogging occur due to interference fringes caused by the light reflected on the surface of the drum-shaped substrate (12) and the light reflected on the surface layer (24b) because it is not absorbed completely in the layer. In contrast, in (sample a), image defects due to interference fringes did not occur, and a clear image with high resolution and high contrast was obtained. Next, other specific examples will be described. [Specific Example 2] This [Specific Example 2] is based on the third layer (2) of the above-mentioned [Specific Example 1].
Only the film forming conditions of 5C) were changed and carbon [C] was doped, and the rest was exactly the same as [Specific Example 1]. That is, in this specific example, after forming a film up to the second layer (25b) in [Specific Example 1], methane gas (CH4) was
The third layer (25c) was formed by introducing hydrogen gas (H, G) at a ratio of 0.3 [%] and 600 [%]. Corona was applied to the photoreceptor thus obtained. 6. Due to discharge.
When a voltage of 5 (KV) was applied, (sample a)
The surface potential was improved by within 20% compared to the above, and good images were obtained even when actually installed in a copying machine or laser printer. [Specific Example 3] This [Specific Example 3] ] Same as [Example 1]
Only the film forming conditions of the third layer (25c) were changed and nitrogen (N) was doped, and the rest was the same as [Specific Example 1]. That is, forming the layer (25), using silane gas [5iH4
) A third layer (25c) was formed by introducing nitrogen gas [N,] into the reaction vessel (11) at a ratio of 2 [%] and hydrogen gas [H2] at a ratio of 600 [%] to the flow rate. It is something. 6. Corona discharge was applied to the photoreceptor thus obtained.
When a voltage of 5 (KV) was applied, (sample a)
Compared to that, the surface potential improved by within 25%, and the image obtained by the actual machine was also good as in [Specific Example 2]. With this configuration, the third M(
25c) is formed of (μC-3i) and the second layer (
25b) is formed by (a-5i),
It has higher sensitivity in the visible light region and near-infrared region than that made only of (a-Si). It is possible to maintain a higher dark resistance than that made only of (μC-8i), improve image quality, and also enable application to laser printers and the like. Also, dark resistance is low. The third layer (25
When only c) is used as a charge generation layer, the film thickness must be increased considerably in order to obtain the required dark resistance and light absorption amount, and the film formation rate is slow (μC-Si). However, using a second layer (25b) consisting of (a-SL) in addition to the (μC-5i) layer has the problem of requiring a longer film formation time and increasing the cost. This makes it possible to reduce the film thickness, which in turn makes it possible to reduce costs. Furthermore, if this photoreceptor (24) is used, since the material is harmless to the human body, there is no need to take special safety measures during manufacturing, and there is no need to treat waste gas, and the photoreceptor can be collected after use. There is no need for it, and it is possible to reduce costs. On the other hand, the charge injection prevention layer (24a)
In addition to doping with boron (CB) to make it n-type, carbon (C) is also doped, but if only boron (B) is used, the surface of the film becomes uneven and the drum-shaped substrate (I2 ), and it becomes easy to peel off. However, when carbon [c] is added, the film is formed to fill in these irregularities, and the adhesion with the drum-shaped substrate (12) is improved, making it easy to peel off. #! of the charge injection prevention layer (24a) is prevented due to the insulating properties of carbon (C) itself. ! It also contributes to improving agility. Furthermore, if the surface layer (24b) is provided as in this embodiment, it is possible to prevent the light absorption efficiency from decreasing and also to form the third layer (24b).
5c) can also be protected. In other words, (μC-3i) has a relatively large refractive index of 3 to 4 due to its characteristics, and is likely to cause light reflection on its surface, but this reflected light is prevented by providing the surface layer (24b), and the third layer ( The amount of light absorbed by 25c) is increased. Note that this invention is not limited to the above-mentioned embodiments, and can be modified in various ways. For example, impurities such as Group Ⅰ of the periodic table or elements of Group Ⅰ of the periodic table may be added to each layer of the photoconductive layer to change the characteristics. The charge injection prevention layer may be of any type, and when the photoconductor surface is positively charged, a layer from group Ⅰ of the periodic table may be used to prevent electron injection from the support. On the other hand, when the photoconductor surface is to be negatively charged, it is doped with an element from group V of the periodic table to prevent the injection of holes from the support. It may be n-type, and its structure may be (a-3i) or (μC-5i), but (μC-3i)
), the absorption of light such as laser light is better, and there is no reflected light from the support. As a result, interference fringes due to reflected light on the surface can be reliably prevented, density unevenness can be prevented, and a clearer image can be obtained. Furthermore, the material to be doped to improve adhesion to the support or insulation is not limited to carbon (C), but may also be nitrogen (N) or oxygen [o]. The thickness is also arbitrary, but is preferably 100 [
[μm] to 10 [μm]. Furthermore, the manufacturing method of each layer may be a photo-CVD method, a sputtering method, etc., and the structure of the photoconductor may be one in which a charge transport layer and a charge generation layer are layered directly on a support in sequence. . Since it is said that the charge generation layer preferably has a film thickness of O9l [μm] to 10 [μm], as in this invention ((μC-3
In the case of a device consisting of two layers, i) layer and (a-5i) layer, the film thickness of the (a-5i) layer is 0.1 depending on the ratio of each layer.
(μm) to 5 (about 3 μm), the film thickness of the (p C-5L) layer should be in the range of about 1 (u+s) to 10 [μm]. It may be formed with (a-5i) or μC-3L) as long as it allows carriers to reach the support side efficiently. Table number ■
It is preferable to use light doping with either one of the elements of group 1 or group Ⅰ of the periodic table, and furthermore, in order to improve the charging ability and have both the functions of charge transport and potential retention. , carbon [C], nitrogen [N], oxygen [○
] It is desirable to contain at least one or more of the following, and if the film thickness is too thin or too thick, it will not function sufficiently, and preferably 3 to 80 μm.
be done. [Effects of the Invention] As explained above, according to the present invention, the charge generation layer of the photoconductive layer is composed of a layer consisting of (μC-5i) and (a-3i).
By stacking layers consisting of (μC-5i
) The required dark resistance and light absorption amount can be obtained with a thin film thickness, and the manufacturing cost can be reduced. In addition, high spectral sensitivity can be obtained in the visible light region and the near-infrared region, and image quality can be improved, and application to laser printers and the like is fully possible. In addition, it can be manufactured safely using a closed system manufacturing equipment using a reaction vessel, and since the material is harmless to the human body, there is no need to install special waste gas treatment equipment as in the past, making it easy to use. There is no need to collect the photoreceptor afterward, and as a result, economical efficiency can be improved.

[Brief explanation of the drawing]

Figures 1 to 3 show one embodiment of the present invention.
Figure 2 is a schematic explanatory diagram showing the film forming apparatus, Figure 2 is a partial sectional view showing the photoreceptor, Figure 3 is a graph showing its spectral sensitivity characteristics, and Figure 4 is (μC-5i) and (a -3i) is a graph showing X-ray diffraction. 10...Glow discharge device, 11...Reaction container, 1
2... Drum-shaped base, 13... Heater, 16...
・・Support rod, 17・High frequency power supply, 18・
...Cylindrical electrode, 20...Gas supply system, 24.
...Photoreceptor, 24a...Charge injection prevention layer,
24b...Surface layer, 25...Photoconductive layer, 25a...First M 25b...Second
Layer 25c...Third layer agent Patent attorney Inoue-male (Importation of amendments to procedures relating to the law) Director General of the Patent Office Michibe Uga 1, Indication of the case 1985 Patent Application No. 205355 2. Name of the invention Photoconductor 3. Relationship with the case of the person making the amendment Patent applicant (307) Co., Ltd. Toshiba Toshiba Automatic Equipment Engineering Co., Ltd. 5. "Explanation" column 6, contents of amendment (1) On page 2, line 18 of the specification, r (cds) j is corrected to r (CdS) J. (2) On page 7, line 19 of the specification, "increases" is corrected to "decreases". (3) In the specification, page 15, line 7, "r hours" is corrected to "minutes." (4) In the 11th line of page 18 of the specification, "image photoreceptor" is corrected to "photoreceptor." (5) On page 19, line 20 of the specification, "Layer (25) formed," is corrected to "After formation of second layer (25b)." (6) "Doping" on page 21, line 11 of the specification is replaced with "
6 (7) In the specification, page 21, line 12, “doping” should be corrected to “doping”.
Corrected to "doping." (8) Page 21, line 13 of the specification: “Surface is uneven”
is corrected to "large distortion." (9) On page 21, line 16 of the specification, ``Fill in unevenness'' is corrected to ``Reduce distortion.'' (10) On page 23, line 15 of the specification, "Yo (") is corrected to "yo ni". (11) On page 24, line 2 of the specification, "Moμc-3i"
Correct J to ``Mo(μc-3i) J.'' (12) Correct ``wide'' to ``wide'' on page 24, line 20 of the specification. that's all

Claims (1)

[Scope of Claims] 1. In a device in which a charge injection prevention layer and a photoconductive layer are provided on a conductive support, the charge injection prevention layer is of a p-type containing at least one atom among carbon, nitrogen, and oxygen. or an n-type semiconductor, and the photoconductive layer includes a first layer made of amorphous silicon containing at least one atom of carbon, nitrogen, and oxygen, a second layer made of amorphous silicon, and a A photoconductor characterized in that the third layer made of crystalline silicon is laminated sequentially from the support side. 2 The thickness of the first layer is 3 [μm] to 80 [μm], the thickness of the second layer is 0.1 [μm] to 5 [μm], and the thickness of the third layer is 1 [μm]. ] to 10 [μm]. 3 Each of the first to third layers corresponds to periodic table I.
The photoconductor according to claim 1 or 2, characterized in that it contains an atom of Group II or an atom of Group V of the periodic table.