JPS61282848A - Photoconductor - Google Patents

Abstract

PURPOSE:To improve the electrostatic charging performance by forming a carrier generating layer contg. microcrystalline Si as the principal component and a carrier transferring layer of amorphous Si on an electrically conductive support. CONSTITUTION:A blocking layer 24a, a carrier transferring layer 24b, a carrier generating layer 24c and a surface layer 24e are successively formed on an electrically conductive drum-shaped substrate 12. The carrier generating layer 24c is composed of microcrystalline Si, a group III or V element in the periodic table and one or more kinds of atoms selected among C, O and N. The carrier transferring layer 24b is made of amorphous Si contg. one or more kinds of atoms selected among C, O and N and a group III or V element in the periodic table. Thus, a photoconductor having superior heat and moisture resistances, high mechanical strength and satisfactory electrostatic charging performance and harmless to the human body can be produced.

Description

[Detailed description of the invention]

[Technical Field of the Invention] The present invention relates to a photoconductor that forms an electrostatic latent image in an image forming apparatus such as an electrophotographic apparatus. [Technical background of the invention and its problems] In recent years, image forming apparatuses such as electrophotographic apparatuses. With the diversification of functions and models, inorganic materials such as cadmium sulfide (CdS), zinc oxide (ZnO), selenium (Se), selenite alloy (Sa-Te), and poly-N- Vinyl carbazole (hereinafter referred to as PVCz)
), trinitrofluorene (hereinafter referred to as TNF)
A variety of organic materials have been developed, such as 6. However, among the photoconductive materials, selenium (Se), cadmium sulfide (CdS), etc. are inherently harmful to the human body. During manufacturing, the manufacturing equipment becomes complicated due to safety measures, which increases the manufacturing cost.In addition, it is necessary to collect it after use, which further increases the cost. Since Te) has a low crystallization temperature of approximately 65 ('C), it is easily crystallized, and residual charges are generated in the crystallized portion, which tends to cause problems such as staining the image. Zinc oxide (ZnO) has the disadvantage of not being able to prolong its life.
Due to its physical properties, it is susceptible to oxidation-reduction and is significantly affected by environmental conditions such as temperature and humidity, resulting in unstable image quality and poor reliability. Furthermore, organic materials such as (PVCz) and (TNF) have poor thermal stability and wear resistance, making it difficult to extend their service life, and recently they have also been suspected of being carcinogenic. Therefore, in recent years, in order to solve the above-mentioned drawbacks, it is non-polluting and does not require collection treatment, has a high surface hardness and has excellent abrasion resistance and impact resistance, and is also higher in the visible light range than before. Amorphous silicon with spectral sensitivity (hereinafter a-
3i) is being studied for application to photoconductive materials such as photoreceptors. Specifically, since the photoreceptor is required to have high resistance and high photosensitivity, in order to satisfy both of these characteristics, the conductive support and (a-5i) photoconductive layer are A laminated type (a-8i) in which a blocking layer is provided in between and a surface charge retention layer is layered on the (a-8i) photoconductive layer.
3i) A photoreceptor has been developed. However, when (a-Si) is formed by a glow discharge decomposition method using a gas containing silane (Si), (a-Si)
There is a problem in that the electrical characteristics and optical characteristics vary greatly depending on the amount of hydrogen atoms (H) incorporated into the SL) film. In other words, as the amount of hydrogen atoms (H) incorporated into the (a-Si) film increases, the optical bandgap becomes larger and the resistance becomes higher. In addition, depending on the film formation conditions, ((Si
Bond structures such as H,)n) bonds and (SiHz) bonds are dominant in the (a-Si) film,
As a result, (SiH) bonds are broken, structural defects such as dangling bonds and voids increase, and photoconductivity deteriorates. On the other hand (a-5i) When the amount of hydrogen atoms [formed] incorporated into the film decreases, the spectral sensitivity to long wavelength light increases, but on the other hand, the optical bandgap becomes smaller, resulting in lower resistance, and the hydrogen atoms ( Since H) no longer compensates for dangling bonds, the mobility and lifetime of the generated carriers are reduced, resulting in a problem in that the photoconductivity is also deteriorated, making it impossible to use it as a photoreceptor. Therefore, as a method to increase the spectral sensitivity to long wavelength light, there is a method of mixing a gas containing silane (Sil) and germane gas (GeH,) and forming a film with a narrow optical bandgap by glow discharge decomposition. However, in general, the optimum support temperature during glow discharge is silane (
4 for Si)-containing gas and germane (Ge[(4) gas)
Since the difference is between 0 and 50 degrees, structural defects are likely to occur in the formed film, the photoconductivity is also deteriorated, and furthermore, germane gas (GeH4) becomes toxic when oxidized. The drawback is that the waste gas treatment is also complicated. [Object of the Invention] This invention was made based on the above circumstances, and although it has excellent charging characteristics due to its high resistance, it has high spectral sensitivity characteristics in the visible light and near infrared regions, and furthermore, It is an object of the present invention to provide a photoconductor that has excellent mechanical strength such as abrasion resistance and thermal stability, is easy to manufacture, and can reduce costs. [Summary of the Invention] In order to achieve the above-mentioned object, the present invention provides a carrier generation layer mainly made of microcrystalline silicon (hereinafter referred to as μc-3i) among a carrier transport layer and a carrier generation layer provided on a conductive support. ), and the carrier transport layer is formed of amorphous silicon (hereinafter referred to as a-8
It is called i. ), it is possible to obtain a photoconductor having excellent charging characteristics and high spectral sensitivity characteristics even in the near-infrared light region. [Embodiments of the Invention] In explaining the present invention in detail, the characteristics of (μC-3i) will be described. This (μc-5i) belongs to non-single crystal silicon, but when X-ray diffraction measurements are performed, a halo appears because (a-Si) is amorphous, as shown by the dotted line in Figure 5. On the other hand, (μc-8i) shows a crystal diffraction pattern in the vicinity of [2θ] of 27 to 28.5 (degrees), as shown by the solid line in Figure 5. On the other hand, polycrystalline silicon has a dark resistance of 10' [Ω・α] or less, whereas (μc-3i) has a high resistance of toll [Ω・11 or more.Due to the above-mentioned characteristics, (μc-Si) is
It is distinguished from other non-single-crystal silicon (a-5L) and polycrystalline silicon, and its structure is thought to be formed by an aggregation of microcrystals with a grain size of about several dozen or more. And to produce such (μc-5i) (
As in a-5i), sputtering or glow discharge decomposition is used, but formation can be achieved by setting the temperature of the conductive support on which the film is formed higher or by increasing the high-frequency power compared to (a-5i) production. become more susceptible to That is, by raising the temperature of the support and increasing the high-frequency power, the flow rate of the raw material silane (Si)-containing gas can be increased, and as a result, the film formation rate is increased and (μc-3i) is more likely to be formed. It is from. Furthermore, silane (Sin,
) and higher-order silane gases such as disilane (Si, )I,
-5i) is more easily formed effectively. In addition, in the (μc-8L) layer to be formed, hydrogen (H
As the content of l increases, the degree of crystallinity increases, approaching polycrystalline silicon, and while the dark resistance decreases, the bright resistance increases, and as a result, it no longer exhibits photoconductivity, so the dark resistance and bright In order to obtain excellent photoconductive properties with well-balanced resistance, it is desirable that the (μc-3i) layer contains 0.1 to 30 [atomic %] of hydrogen (H). This (μc-3i) layer is doped with hydrogen (H) using silane (Sin4) or disilane (s) as a raw material.
A silane (Si)-containing gas such as Hs 3 and hydrogen gas [H2] as a carrier gas are introduced into a reaction vessel to perform glow discharge, or silicon tetrafluoride (SiF
) or trichlorosilane (SiCl2.), and a mixed gas of hydrogen gas [H2], or a mixed gas of silane (Si)-containing gas and silicon halide as a raw material. A reaction may also be performed. Furthermore, in the (μc-5i) layer, hydrogen atoms [ In addition to the above, impurities may be doped, but in order to make the p-type, elements from group Ⅰ of the periodic table, such as boron (B) and aluminum [AΩ], are suitable, and on the other hand, n For making molds, elements of group V of the periodic table, such as nitrogen [N] and phosphorus CP3, are suitable. In addition, nitrogen (N
), carbon (C), and oxygen

It is desirable to dope at least one kind of [0]. If this is done, these elements will precipitate at the grain boundaries of (μC-5i), and silicon [
This is because it acts as a terminator for the dangling bonds of Si) and reduces the density of states existing in the forbidden band between bands. Next, an embodiment of the present invention using (μc-SL) having the above characteristics will be described with reference to FIGS. 1 to 4. The reaction container (11) of the glow discharge device (10) has a built-in heater (13) and a motor (14) to support a drum-shaped substrate (12) which is a conductive support and is made of aluminum. ) is rotated by the support rod (16
) is provided. Also, the circumference of the support rod (16) is 13
．． 56 (MHz) surrounded by a cylindrical electrode (18) connected to a high frequency power source (17), and a support rod (16)
Above are silane gas (SiH4), diborane gas (B,
A large number of gas cylinders (19
a)... (19n) and a gas supply system (20) having a gas mixer (20a) is provided with a gas introduction pipe (21) connected via a gas introduction valve (21a). In addition, (8a)...(8n) are each gas cylinder (19a).
... (19n) is a valve, (9a) ... (9n) is a pressure regulator. Furthermore, (22) is an exhaust valve connected to an exhaust device (not shown) that exhausts the inside of the reaction vessel (11), and (23) is a vacuum gauge that measures the atmospheric pressure inside the reaction vessel (11). . Further, (24) and (25) are the first and second photoreceptors of the electrophotographic apparatus which are photoconductors, and in FIG.
blocking layer (24a), first carrier transport layer (
24b), a first photoconductive layer (24d) consisting of a first carrier generation layer (24c), and a first surface layer (24e) are laminated. Note that the order of the first photoconductive layer (24d) may be changed, and in this case, as shown in FIG.
12) A second blocking layer (25a), a second blocking layer (25a), and a second blocking layer (25a)
A second photoconductive layer (25d) consisting of a carrier generation layer (25b) and a second carrier transport layer (25c), and a second surface layer (25e) are laminated. however. Here, each blocking layer (24a), (25a)
is the time of corona discharge of each photoreceptor (24) and (25),
While preventing charges of opposite polarity to the charged charges from being injected from the drum-shaped substrate (12) into each carrier transport layer (24b), (25c), each photoreceptor (24), (25
), each carrier generation layer (24c), (25
Among the carrier pairs generated in step b), carriers having charges of the same polarity as the charged charges are allowed to smoothly flow into the drum-shaped substrate (12). And blocking layers (24g) and (25a) having such functions
) may be of high resistance and insulating type, but for example, when positively charging the surface of the photoreceptor (24) or (25), (a-5i) or (μc-5i) should be used in the periodic table. By doping 1×10″3 to 3 [atomic %] of Group II elements to make the p-type, it prevents the injection of electrons from the drum-shaped substrate (12), while the photoreceptor (24), ( 25) When negatively charging the surface, use (a-3i) or (μc-Si)
) is doped with 1 x 10''S~2 [atomic %] of elements from Group V of the periodic table to make it n-type, so as to prevent the injection of holes from the drum-shaped substrate (12). If so, higher functionality and better photosensitivity can be obtained. In addition, these (a-3i
) or (p c-3i) by doping 0.1 to 20 [atomic %] of at least one of carbon [C], oxygen (0), and nitrogen [N] to the dark resistance. It is possible to improve the characteristics. The thickness of the carrier transport layer (24b) and (25c) is preferably 10G (μm) to 10 (μm), more preferably 0.1μm to 2μm. , carrier generation layer (24c).If the carrier generated in (25b) can efficiently reach the drum-shaped substrate (12) and furthermore can increase the charging ability and potential holding ability in the dark, (a -3i) or (μc-Si), and any of the elements of group Ⅰ or group V of the periodic table may be added to these in lXl0−'~1×10″″3 [atomic % ] By adding carbon [C], nitrogen [N], oxygen to (a-3i) or (pc-3i), the dark resistance can be increased and the charging ability can be improved.

At least one of [0] is 0.1
Charging ability is improved by doping ~20 [atomic%],
Both carrier transport and potential holding functions are improved. Note that the carrier transport layer (24b) * (25c) is (a-
3L), structural defects such as dangling bonds and voids can be corrected by doping with hydrogen (H). Furthermore, a carrier transport layer (24b),
(25c) does not perform its function satisfactorily if the film thickness is too thin or too thick, and preferably 3 (μm) to 80 [μm].
] The zero-order carrier generation layer (24c), (2
5b) absorbs light of any wavelength and generates photogenerated carriers, and is partially or mostly composed of (μc-5i) so as to have spectral sensitivity to long wavelength light, and has a periodic law. Any of the elements in Group ■ of the Table or Group ■ of the Periodic Table lXl0-'~1x10''''! 〔atom%〕
By dodging, a p-type can be obtained in the former case, and an n-type can be obtained in the latter. The film thickness may be as thin as 0.1 C .mu.m to 10 .mu.m. Finally, the surface layers (24e) and (25e) protect the surface, prevent light reflection, improve light transmittance, and retain charge, and are made of carbon (C), nitrogen (N),
, oxygen (0) containing 10 to 50 [atomic%] gold (a-3i) or aluminum oxide CAQxOs1
It is made of inorganic compounds such as, and organic materials such as polyliquefied vinyl, and its film thickness is preferably 100 (μm) to 20 [μm], more preferably 0.1 [μm] to 2 [μm]. Therefore, the photoreceptor (24) (
25), after setting the drum-shaped substrate (12) on the support rod (16), the exhaust valve (22) is opened to bring the inside of the first reaction vessel (11) to a predetermined pressure. The heater (13) is used to treat exhaust gas.
) to heat the drum-shaped substrate (12) to a predetermined temperature. and a gas supply system (20) via the gas introduction pipe (21).
A more required predetermined gas is introduced into the reaction container (11), and while the gas pressure in one reaction container (11) is kept constant, the drum-shaped substrate (12) and the cylindrical electrode ( 18) Applying the necessary power for a predetermined time,
The blocking layer (24a) (25a) is formed, and then the drum-shaped substrate (1) is deposited in the same reaction vessel (11).
The film forming conditions such as the temperature and gas introduced in 2), as well as the amount of electric power and the time of applying electric power, are reset to the prescribed values, and the photoreceptor (2) is deposited on the blocking layers (24a) and (25a).
4), carrier transport layer (2) according to the structure of (25).
4b). (25c) and carrier generation layer (24c), (25
b) are formed in any order to form a photoconductive layer (24d), (2
5d) film formation is performed. Furthermore, each film forming condition was reset to the specified one in the same reaction vessel (11), and the surface layer (24a) = (25e) was formed on the photoconductive layers (24d) and (25d), and the photoreceptor was (24) Finish the formation of (25). Next, several specific examples of the effects of this embodiment will be described. [Specific Example 1] First, the drum-shaped base (12) is set on the support rod (16), the exhaust valve (22) is opened, and the exhaust device (not shown) is turned on.
The inside of the reaction vessel (11) is evacuated to 0.1 (Torr) or less, and the drum-shaped substrate (
12) Heat to 300 ('C). Next, from the gas supply system (20), methane gas (CH4) was added to the silane gas (SiH) flow rate at 10% through the gas introduction pipe (21).
~100 [%], diborane gas (axis) 0.01
~1 [%] mixed gas was introduced into the reaction vessel (11), and the pressure inside the reaction vessel (11) was maintained at 0.4 (Torr) by an exhaust device (not shown). While the drum-shaped substrate (12) was rotated by the motor (15), a power of 150 (Vl) was applied by the high-frequency power source (17) between the drum-shaped substrate (12) and the cylindrical electrode (18) for one hour. (a- 3i) a first blocking layer (24a) consisting of
After forming the film, the supply of electricity and various gases is stopped. Subsequently, diborane gas (diborane gas (
us ) 0.01 to 1 [%], methane gas [C
A mixture of 0.1% to 80% of H,] is introduced, and the pressure inside the reaction vessel (11) is maintained at 0.5 (Torr) using an exhaust bag W (not shown). (12)
While rotating, too(
w) is applied to the drum-shaped substrate (12) and the cylindrical electrode (1).
8) for 5 hours to transform the first carrier transport layer (24b) made of (a-Si) into the first blocking layer (24).
a) Form a film on top and stop the supply of electricity and various gases0
Next, hydrogen gas [H2] was supplied into one reaction vessel (11) from the gas supply system (20) at 5% of the flow rate of silane gas (SiJ).
00 [%], diborane gas CBAH@) from 0.001 to
1 [%], and methane gas [co, ) and nitrogen gas]
The total value is 0.1~. A 30 [%] mixed gas was introduced, and while the pressure inside the reaction vessel (11) was maintained at Q,8 (Torr) by an exhaust device (not shown), the drum-shaped substrate (12) was rotated. High frequency power supply (17)
A power of 400 (It) was applied for 3 minutes between the drum-shaped substrate (12) and the cylindrical electrode (18), and (a-Si) and (p c-3) were applied on the first carrier transport layer (24b).
The first carrier generation layer (24c) made of the mixture of (i)
) is formed, and the supply of electricity and various gases is stopped. Finally, methane gas (CH4
) was introduced into one reaction vessel (1
1) While rotating the drum-shaped base (12) while maintaining the internal pressure at 0.5 (Torr), apply a high-frequency power source (17).
A power of 200 (W) was applied for about 10 minutes, and the first
A first surface layer (24e) consisting of (a-5i) is formed on the carrier generation layer (24c) of , and the supply of electricity and gas is stopped to complete the production of the first photoreceptor (24). . The film thickness of the first photoreceptor (24) thus obtained is approximately 25 [μm], and the first carrier generation layer (24) is approximately 25 [μm] thick.
When the crystallinity and crystal grain size of (μc-8i) in 4c) were measured by X-ray diffraction method, the crystallinity was 30%.
], and the crystal grain size was 35 [persons]. or. This first photoreceptor (24) is caused to have a 0.5
When a charge of (μc/a#) is applied, the charging capacity is 5
00 (V), and when this first photoreceptor (24) was loaded into the main body of an electrophotographic apparatus (not shown) and copied, it showed excellent heat resistance, moisture resistance, abrasion resistance, etc. [10,000 pieces]
Even after repeated copying, a clear and high-quality image was obtained, almost unchanged from the initial image. Furthermore, when we measured the spectral sensitivity of this first photoreceptor (24) and the spectral sensitivity of a conventional photoreceptor (not shown) in which the carrier generation layer consists only of (a-3i), the results were as shown in FIG. Compared to the conventional photoreceptor shown by the dotted line, this first photoreceptor (24) has higher sensitivity at wavelengths of 650 (nm) or more (visible light region and near infrared region), as shown by the solid line, Application to laser beam printers and the like is also possible. (Specific Example 2) This (Specific Example 2) consists of the first carrier transport layer (24b) and the first carrier generation layer (24c) of the above-mentioned (Specific Example 1).
The order of film formation is reversed, and the first carrier transport layer (24
Instead of diborane gas (tsini) during film formation in b),
Phosphine gas (PH3) is mixed with silane gas (Silo 3
A reactant gas mixed at 0.001 to 1% with respect to the flow rate is used, and the rest is exactly the same as (Specific Example 1). That is, in this example, a second blocking layer (25a) similar to (Example 1) is provided on the drum-shaped substrate (12).
After forming a film, a second carrier generation layer (25b) similar to that in (Specific Example 1) is formed on this second blocking layer (25a).
), then a second carrier transport layer (25c) is formed under the above conditions, and then a second surface layer (256) similar to (Specific Example 1) is formed. . The charging characteristics and spectral sensitivity characteristics of the second photoreceptor (25) formed in this way, as well as the number of sheets that can be continuously copied, etc. are as follows (Specific Example 1)
Almost the same results as the first photoreceptor (24) were obtained. With this configuration, each carrier generation layer (24c)
, Since (25b) is formed from a mixture of (pc-8i) and (a-3i), it exhibits better performance in the visible light region and near-infrared region compared to one consisting only of (a-3L). It has high sensitivity, improves image quality, can be applied to laser printers, etc., and extends its lifespan. Furthermore, each of these photoreceptors (24) and (25). Since the material is harmless to the human body, no special safety measures are required during manufacturing, there is no need to treat waste gas, and there is no need to collect the photoreceptor after use, resulting in cost reduction. In addition, as in this example, each surface layer (24
e), (25a), each conductive layer (24d
), (25d), and protect each photoreceptor (24).
), (25) can be extended, and the light absorption efficiency in each photoconductive layer (24d), (25d) can be prevented from decreasing, and image quality can be improved. That is, (μc-S
i) has a relatively large refractive index of 3 to 4 due to its characteristics and tends to cause light reflection on one surface, but the surface layer (24e), (2
By providing layer 5e), this light reflection is prevented, the amount of light absorbed by the photoconductive layers (24d) and (25d) is increased, and a clear image can be obtained. Note that this invention is not limited to the above embodiments, and various design changes are possible. For example, (μc-3i
) is completely arbitrary, and as long as the charging ability is improved by the blocking layer and the carrier transport layer, 1
00[%] (μc-3i). Also, (μc
The mixture of -5i) and (a-8i) may be dispersed and mixed in a single layer, or (μc-3L
) and (a-5i) may be layered. Furthermore, the structure of the photoconductor is completely arbitrary, and as long as it can maintain charging ability, a blocking layer is not required. Therefore, the surface layer may not be provided as long as it can compensate for wear resistance and light reflection. Furthermore, the thicknesses of the blocking layer, carrier transport layer, carrier generation layer, and surface layer in the examples may be arbitrary, and the manufacturing method thereof may be a photo-CVD method, a sputtering method, or the like. [Effects of the Invention] As explained above, according to the present invention, the carrier generation layer has a material having excellent heat resistance, moisture resistance, and strong mechanical strength (μc-8
By using i), it is possible to improve the spectral sensitivity in the visible light region and the near-infrared region, and improve the image quality.
It becomes possible to apply it to laser printers and the like, and furthermore, the lifespan thereof can be extended. In addition, it can be manufactured safely using a closed system manufacturing equipment using a reaction vessel, and since the material is harmless to the human body, there is no need to install waste gas treatment equipment, and after use, the photoreceptor It is also not necessary to recover the waste, which in turn can improve economic efficiency. Furthermore, by providing a surface layer as in the embodiment, a longer life can be achieved, and by providing a blocking layer, the charging ability can be improved.

[Brief explanation of drawings]

Figures 1 to 4 show one embodiment of the present invention.
The figure is a schematic explanatory diagram showing the film forming apparatus, and Figure 2 is the first
FIG. 3 is a partial cross-sectional view showing the second photoreceptor, FIG. 4 is a graph showing its spectral sensitivity characteristics, and FIG. 5 is a graph showing (μc-Si). It is a graph showing X-ray diffraction of (a-5i). (10) Claw discharge device, (11) Reaction container,
(12) Drum-shaped base, (13) Heater, (
16) Support rod, (17) High frequency power supply,
(18) Cylindrical electrode; (20) Gas supply system. (24) first photoreceptor, (24a) first blocking layer, (24b) first carrier transport layer, (2
4c) first carrier generation layer, (24s) first surface layer, (25) second photoreceptor, (25a) second blocking layer, (25b) second carrier generation layer, (2
5c) second carrier transport layer, (25e) second surface layer.

Claims (1)

[Claims] 1. A photoconductive layer consisting of a carrier generation layer and a carrier transport layer is provided on a conductive support, wherein the carrier generation layer has microcrystalline silicon in the layer and has a periodic structure. The carrier transport layer contains an element of Group III of the Table of Contents or an element of Group V of the Periodic Table, and further contains at least one atom of carbon, oxygen, or nitrogen, and the carrier transport layer contains an element of Group III of the Periodic Table. contains at least one atom of
Furthermore, a photoconductor characterized by being made of amorphous silicon containing an element of Group III of the periodic table or an element of Group V of the periodic table. 2. The carrier generation layer has a film thickness of 0.1 [μm] to 5 [μm].
m], and the carrier transport layer has a film thickness of 3 [μm] to 8 [μm].
The photoconductor according to claim 1, wherein the photoconductor has a diameter of 0 [μm]. 3. A film having a thickness of 0.1 [μm] containing at least one atom of carbon, oxygen, and nitrogen between the support and the photoconductive layer, and containing an element of group III of the periodic table or an element of group V of the periodic table. The photoconductor according to claim 1 or 2, characterized in that a blocking layer of 1 to 10 [μm] is provided. 4. Film thickness of 100 [Å] to 20 [μm] on the surface of the photoconductive layer
A photoconductor according to any one of claims 1 to 3, characterized in that a surface layer of the following is provided. 5. The photoconductor according to claim 4, wherein the surface layer contains at least one atom among carbon, oxygen, and nitrogen, and has a silicon atom as a matrix. 6. The photoconductor according to any one of claims 1 to 5, wherein the carrier generation layer contains hydrogen atoms. 7. The photoconductor according to any one of claims 1 to 6, wherein the carrier generation layer is made of a mixture of microcrystalline silicon and amorphous silicon.