JPS6265382A - サ−ジ吸収素子 - Google Patents
サ−ジ吸収素子Info
- Publication number
- JPS6265382A JPS6265382A JP20344785A JP20344785A JPS6265382A JP S6265382 A JPS6265382 A JP S6265382A JP 20344785 A JP20344785 A JP 20344785A JP 20344785 A JP20344785 A JP 20344785A JP S6265382 A JPS6265382 A JP S6265382A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- region
- semiconductor
- voltage
- surge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 244
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000010521 absorption reaction Methods 0.000 claims description 14
- 230000015556 catabolic process Effects 0.000 abstract description 73
- 238000009792 diffusion process Methods 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 4
- 229920000136 polysorbate Polymers 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 29
- 230000000694 effects Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20344785A JPS6265382A (ja) | 1985-09-17 | 1985-09-17 | サ−ジ吸収素子 |
| US07/488,457 US5083185A (en) | 1985-02-15 | 1990-02-26 | Surge absorption device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20344785A JPS6265382A (ja) | 1985-09-17 | 1985-09-17 | サ−ジ吸収素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6265382A true JPS6265382A (ja) | 1987-03-24 |
| JPH0133951B2 JPH0133951B2 (enrdf_load_stackoverflow) | 1989-07-17 |
Family
ID=16474265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20344785A Granted JPS6265382A (ja) | 1985-02-15 | 1985-09-17 | サ−ジ吸収素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6265382A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01286370A (ja) * | 1988-05-12 | 1989-11-17 | Agency Of Ind Science & Technol | 半導体サージ保護素子 |
| US5486709A (en) * | 1992-03-27 | 1996-01-23 | Agency Of Industrial Science & Technology | Surge protection device |
| EP0802567A3 (en) * | 1996-04-15 | 2000-07-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
| US6242787B1 (en) | 1995-11-15 | 2001-06-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
| US6831331B2 (en) | 1995-11-15 | 2004-12-14 | Denso Corporation | Power MOS transistor for absorbing surge current |
| JP2005354079A (ja) * | 2004-06-10 | 2005-12-22 | Lg Electron Inc | ツェナーダイオード及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5178693A (enrdf_load_stackoverflow) * | 1974-12-23 | 1976-07-08 | Ibm |
-
1985
- 1985-09-17 JP JP20344785A patent/JPS6265382A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5178693A (enrdf_load_stackoverflow) * | 1974-12-23 | 1976-07-08 | Ibm |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01286370A (ja) * | 1988-05-12 | 1989-11-17 | Agency Of Ind Science & Technol | 半導体サージ保護素子 |
| US5486709A (en) * | 1992-03-27 | 1996-01-23 | Agency Of Industrial Science & Technology | Surge protection device |
| US6242787B1 (en) | 1995-11-15 | 2001-06-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
| US6831331B2 (en) | 1995-11-15 | 2004-12-14 | Denso Corporation | Power MOS transistor for absorbing surge current |
| EP0802567A3 (en) * | 1996-04-15 | 2000-07-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
| JP2005354079A (ja) * | 2004-06-10 | 2005-12-22 | Lg Electron Inc | ツェナーダイオード及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0133951B2 (enrdf_load_stackoverflow) | 1989-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |