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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
Priority to JP57086049ApriorityCriticalpatent/JPS58201327A/ja
Publication of JPS58201327ApublicationCriticalpatent/JPS58201327A/ja
Publication of JPS6262458B2publicationCriticalpatent/JPS6262458B2/ja
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/26—Bombardment with radiation
H01L21/263—Bombardment with radiation with high-energy radiation
H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Method of making semiconductor devices by forming an impurity adjusted epitaxial layer over out diffused buried layers having different lateral conductivity types