JPS6262074B2 - - Google Patents

Info

Publication number
JPS6262074B2
JPS6262074B2 JP12624282A JP12624282A JPS6262074B2 JP S6262074 B2 JPS6262074 B2 JP S6262074B2 JP 12624282 A JP12624282 A JP 12624282A JP 12624282 A JP12624282 A JP 12624282A JP S6262074 B2 JPS6262074 B2 JP S6262074B2
Authority
JP
Japan
Prior art keywords
conductive layer
incident
semiconductor substrate
position signal
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12624282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5917288A (ja
Inventor
Seiji Yamaguchi
Akinaga Yamamoto
Toshihiko Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP57126242A priority Critical patent/JPS5917288A/ja
Publication of JPS5917288A publication Critical patent/JPS5917288A/ja
Publication of JPS6262074B2 publication Critical patent/JPS6262074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP57126242A 1982-07-20 1982-07-20 入射位置検出用半導体装置 Granted JPS5917288A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57126242A JPS5917288A (ja) 1982-07-20 1982-07-20 入射位置検出用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57126242A JPS5917288A (ja) 1982-07-20 1982-07-20 入射位置検出用半導体装置

Publications (2)

Publication Number Publication Date
JPS5917288A JPS5917288A (ja) 1984-01-28
JPS6262074B2 true JPS6262074B2 (enExample) 1987-12-24

Family

ID=14930307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57126242A Granted JPS5917288A (ja) 1982-07-20 1982-07-20 入射位置検出用半導体装置

Country Status (1)

Country Link
JP (1) JPS5917288A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127883A (ja) * 1983-01-12 1984-07-23 Matsushita Electronics Corp 感光半導体装置
JPH0691279B2 (ja) * 1986-10-03 1994-11-14 理化学研究所 半導体位置検出素子
JP2572389B2 (ja) * 1987-05-21 1997-01-16 浜松ホトニクス株式会社 高速応答光位置検出器
JPH01115169A (ja) * 1987-10-29 1989-05-08 Hamamatsu Photonics Kk 入射位置検出用半導体装置
JPH0644640B2 (ja) * 1987-10-29 1994-06-08 浜松ホトニクス株式会社 入射位置検出用半導体装置
JPH0644641B2 (ja) * 1987-10-29 1994-06-08 浜松ホトニクス株式会社 入射位置検出用半導体装置
JPH01143427U (enExample) * 1988-03-28 1989-10-02
JP2524708Y2 (ja) * 1990-11-26 1997-02-05 シャープ株式会社 ポジションセンサ
JP4209526B2 (ja) * 1998-12-28 2009-01-14 浜松ホトニクス株式会社 半導体位置検出器及びこれを用いた測距装置

Also Published As

Publication number Publication date
JPS5917288A (ja) 1984-01-28

Similar Documents

Publication Publication Date Title
RU2238571C2 (ru) Датчик магнитного поля
US3593067A (en) Semiconductor radiation sensor
JPS6262074B2 (enExample)
EP0061802A2 (en) Imaging devices and systems
JPS5928072B2 (ja) 輻射線感知装置
JPH05335618A (ja) 光位置検出半導体装置
JPH0241179B2 (enExample)
US5138146A (en) Image position sensitive device with multiple output electrodes
US4060822A (en) Strip type radiation detector and method of making same
US4717946A (en) Thin line junction photodiode
JPS59127883A (ja) 感光半導体装置
JPS5956774A (ja) 粒子線等の入射位置検出用半導体装置
US4942442A (en) Device including a radiation sensor
JPH01115170A (ja) 入射位置検出用半導体装置
JP2972303B2 (ja) ２次元光位置検出器
JP2001015797A (ja) 光入射位置検出用半導体装置およびその製造方法
JPS6057716B2 (ja) 半導体光位置検出器
JPH02108992A (ja) 放射線検出器およびこれを用いた放射線検出装置
JP3260495B2 (ja) 光位置検出用半導体装置
JP2572389B2 (ja) 高速応答光位置検出器
JPH0650344B2 (ja) 放射検出素子を含むデバイス
JP3229083B2 (ja) 光電変換素子
JPH01289178A (ja) 半導体位置センサ
JPS6390181A (ja) 半導体位置検出素子
JPH0342878A (ja) 半導体位置検出素子