JPS6261172B2 - - Google Patents

Info

Publication number
JPS6261172B2
JPS6261172B2 JP56102745A JP10274581A JPS6261172B2 JP S6261172 B2 JPS6261172 B2 JP S6261172B2 JP 56102745 A JP56102745 A JP 56102745A JP 10274581 A JP10274581 A JP 10274581A JP S6261172 B2 JPS6261172 B2 JP S6261172B2
Authority
JP
Japan
Prior art keywords
reset
signal
circuit
output
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56102745A
Other languages
Japanese (ja)
Other versions
JPS585026A (en
Inventor
Kyoto Oota
Makoto Yamatani
Tsunezo Adachi
Yasuhiko Kajimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP56102745A priority Critical patent/JPS585026A/en
Publication of JPS585026A publication Critical patent/JPS585026A/en
Publication of JPS6261172B2 publication Critical patent/JPS6261172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22Modifications for ensuring a predetermined initial state when the supply voltage has been applied

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 本発明は、電源投入時あるいは電源電圧異常時
に電源電圧が所定値に達して半導体集積回路全体
の動作が安定するまでの期間にわたり、内部的に
リセツトをかけ異常な出力の外部への発生を阻止
するためのリセツト回路を内蔵するとともに、既
存の入力端子の1つに外部から所定の信号を入力
することによつて、リセツト信号を解除する事の
できる半導体集積回路を提供するものである。
DETAILED DESCRIPTION OF THE INVENTION When the power is turned on or when the power supply voltage is abnormal, the power supply voltage is reset internally during the period until the power supply voltage reaches a predetermined value and the operation of the entire semiconductor integrated circuit is stabilized. This semiconductor integrated circuit has a built-in reset circuit to prevent the generation of external signals, and can cancel the reset signal by inputting a predetermined signal from the outside to one of the existing input terminals. This is what we provide.

第1図は、半導体集積回路内に一体的に集積化
され、電源投入時あるいは電源電圧異常時に集積
化された各種の機能回路ブロツクにリセツトをか
けることのできる従来のリセツト回路の構成を示
す図である。かかるリセツト回路では、電源端子
Aとリセツト信号発生端子Dとの間に電源電圧検
出部Bならびに、この検出出力が印加されて動作
し電源投入時に電源電圧が半導体集積回路の動作
電圧範囲に収まるまで、あるいは、電源電圧異常
時に機能回路のごとく一部でも誤動作を起こす電
源電圧範囲に入る以前に、リセツト信号を発生す
るリセツト信号発生部Cを配置した構成が採られ
ており、リセツト信号発生端子Dに生じる信号で
強制的にリセツトをかけて回路の誤動作を防ぐと
共に外部に異常な信号を出さないようにしてシス
テムとしての信頼性を向上させるようになつてい
た。
FIG. 1 is a diagram showing the configuration of a conventional reset circuit that is integrated into a semiconductor integrated circuit and can reset various integrated functional circuit blocks when the power is turned on or when the power supply voltage is abnormal. It is. In such a reset circuit, the power supply voltage detection section B and its detection output are applied between the power supply terminal A and the reset signal generation terminal D, and the circuit operates until the power supply voltage falls within the operating voltage range of the semiconductor integrated circuit when the power is turned on. Alternatively, a configuration is adopted in which a reset signal generating section C is arranged to generate a reset signal before the power supply voltage reaches a range where even a part of the functional circuit, such as a functional circuit, malfunctions when the power supply voltage is abnormal. This system was designed to forcibly reset the circuit using a signal generated by the circuit to prevent malfunction of the circuit, and also to prevent abnormal signals from being output to the outside, thereby improving the reliability of the system.

ところで、リセツトのかかる電源電圧値は、通
常、製品規格の電源電圧の下限値よりもいくぶん
低い値に設定される。一方、半導体集積回路の使
用される製品の動作範囲は、製品保証の観点から
製品規格の範囲より充分広く設定されており、動
作電源電圧の下限値は上述した半導体集積回路の
リセツトのかかる電源電圧値を下回つていなけれ
ばならない。このため、製品の動作範囲が、リセ
ツトのかかる電圧値よりも更に低い事を確認する
ための検査が必要となるが、従来のリセツト回路
をもつ半導体集積回路では、製品の動作電圧範囲
の下限に達する以前にリセツトがかかり、検査が
できなくなる不都合があつた。
Incidentally, the power supply voltage value to which the reset is applied is usually set to a value somewhat lower than the lower limit value of the power supply voltage in the product standard. On the other hand, the operating range of products in which semiconductor integrated circuits are used is set to be sufficiently wider than the range of product standards from the perspective of product guarantee, and the lower limit of the operating power supply voltage is the power supply voltage at which the semiconductor integrated circuit needs to be reset. must be below the value. For this reason, testing is required to confirm that the product's operating range is even lower than the voltage required for reset, but in semiconductor integrated circuits with conventional reset circuits, There was an inconvenience that the reset occurred before the test was reached, making it impossible to perform the test.

本発明は、このような不都合を排除することの
できる半導体集積回路を提供するものであり、本
発明の特徴は、半導体集積回路内に内蔵されるリ
セツト回路を動作させるための信号を発生するリ
セツト信号発生回路ならびにこの回路の出力に基
くリセツト回路の動作を停止させる機能回路、す
なわちリセツト解除機能回路を有するとともに、
リセツト解除機能回路を内蔵させることに伴い必
要となる外部から制御信号を入力するための端子
を特に増設することなく、既存の端子を共用させ
たところにある。
The present invention provides a semiconductor integrated circuit that can eliminate such inconveniences, and a feature of the present invention is a reset circuit that generates a signal for operating a reset circuit built into the semiconductor integrated circuit. It has a signal generating circuit and a functional circuit that stops the operation of the reset circuit based on the output of this circuit, that is, a reset release functional circuit, and
The existing terminals can be used in common without adding additional terminals for inputting control signals from the outside, which is required due to the built-in reset release function circuit.

以下に図面を参照して本発明の半導体集積回路
の要部の構成とその動作について詳しく説明す
る。
The configuration and operation of the main parts of the semiconductor integrated circuit of the present invention will be described in detail below with reference to the drawings.

第2図は、本発明の半導体集積回路の内部に作
り込まれるリセツト信号発生部とリセツト解除機
能回路部の構成を示すブロツク図であり、電源端
子Aに電源電圧検出部Bの入力端子Binが接続さ
れ、その出力端子Boutがリセツト信号発生部C
の入力端子Cinに接続され、その出力端子Coutが
リセツト解除制御部Eの第1入力端子Ein1に接続
されている。また、外部からリセツト解除信号を
入力する端子Fが、入力信号検出部Gの入力端子
Ginに接続され、その出力端子Goutがリセツト解
除信号発生部Hの入力端子Hinに接続され、さら
にこの出力端子Houtがリセツト解除制御部Eの
第2入力端子Hin2に接続されている。そして、そ
の出力端子Eoutが集積回路内部に含まれている
リセツト回路(図示せず)に繋るリセツト信号発
生端子Dに接続される構成となつている。
FIG. 2 is a block diagram showing the configuration of a reset signal generation section and a reset release function circuit section built into the semiconductor integrated circuit of the present invention. The output terminal Bout is connected to the reset signal generator C.
The output terminal Cout is connected to the first input terminal Ein1 of the reset release control section E. In addition, the terminal F to which the reset release signal is input from the outside is the input terminal of the input signal detection section G.
Gin, its output terminal Gout is connected to the input terminal Hin of the reset release signal generation section H, and this output terminal Hout is further connected to the second input terminal Hin 2 of the reset release control section E. The output terminal Eout is connected to a reset signal generation terminal D connected to a reset circuit (not shown) included inside the integrated circuit.

次に各々の部分を動作を説明する。まず、従来
からある電源端子Aは、半導体集積回路全体を動
作させるための電力を供給するための端子であ
り、同時に図示するように電源電圧検出部Bに接
続されている。電源電圧検出部Bは、電源端子A
に印加されている電圧が半導体集積回路を安定な
状態で動作させるのに十分な電圧であるかどうか
を検出する。リセツト信号発生部Cは、電源電圧
検出部Bからの信号を受けて電源電圧が所定値に
達するまでリセツト信号を発生させる。リセツト
解除信号入力端子Fは、通常の動作状態の下では
半導体集積回路の入力端子あるいは出力端子の1
つとして用いられているが、リセツトを解除する
目的で制御信号を入力する間は、リセツト解除信
号入力端子となる端子である。入力信号検出部G
は、リセツト解除信号入力端子Fに加えられた入
力信号が、リセツト解除信号である事を検出する
ためのものである。リセツト解除信号発生部H
は、入力信号検出部Gの信号を受けて、リセツト
解除信号を発生させる。リセツト解除制御部E
は、リセツト信号発生部Cおよびリセツト解除信
号発生部Hからの信号を受け、リセツト解除信号
が出ていなければリセツト信号発生部Cから出力
される信号をそのまま出力し、一方リセツト解除
信号が出ていれば、この期間はリセツト信号発生
端子Dへのリセツト信号の発生を阻止するように
作用する。
Next, the operation of each part will be explained. First, a conventional power supply terminal A is a terminal for supplying power for operating the entire semiconductor integrated circuit, and is also connected to a power supply voltage detection section B as shown. Power supply voltage detection section B is connected to power supply terminal A.
It is detected whether the voltage applied to the semiconductor integrated circuit is sufficient to operate the semiconductor integrated circuit in a stable state. Reset signal generating section C receives a signal from power supply voltage detecting section B and generates a reset signal until the power supply voltage reaches a predetermined value. Under normal operating conditions, the reset release signal input terminal F is one of the input terminals or output terminals of the semiconductor integrated circuit.
However, while inputting a control signal for the purpose of canceling the reset, this terminal becomes the reset release signal input terminal. Input signal detection section G
is for detecting that the input signal applied to the reset release signal input terminal F is a reset release signal. Reset release signal generator H
receives the signal from the input signal detection section G and generates a reset release signal. Reset release control section E
receives the signals from the reset signal generation section C and the reset release signal generation section H, and if the reset release signal is not output, it outputs the signal output from the reset signal generation section C as is, while if the reset release signal is not output. If so, it acts to prevent generation of the reset signal to the reset signal generation terminal D during this period.

ところで、このように構成された回路ブロツク
で特に重要な部分は、入力信号検出部Gである。
上記のようにリセツト解除信号入力端子Fは、通
常入力端子あるいは出力端子として用いられてお
り、通常の使用状態の下でリセツト解除信号が発
生しないようにしておかないと、電源電圧異常時
等に、内部回路に対して的確なリセツトをかける
事ができなくなる。
Incidentally, a particularly important part of the circuit block configured as described above is the input signal detection section G.
As mentioned above, the reset release signal input terminal F is normally used as an input terminal or an output terminal, and if the reset release signal is not generated under normal usage conditions, the reset release signal input terminal F will not be generated in the event of a power supply voltage abnormality, etc. , it becomes impossible to apply an accurate reset to the internal circuit.

本発明の半導体集積回路でリセツト解除動作を
実行させるに際しては、リセツト解除信号入力端
子Fに加える入力として通常より高い電圧を加
え、入力信号検出部Gに分圧回路を用いて検出す
る方法や、通常入力あるいは出力として考えられ
ない周期的な信号を加えゲート回路を用いて検出
する方法など、通常の使用では、絶対にあり得な
い信号を印加する事によつて、正常にリセツト解
除信号発生部Hを動作させることが必要となる。
勿論、このためにはリセツト解除信号入力端子F
として既存のどの端子を選択したかによつて、入
力信号検出部Gの構成を決める必要がある。以
下、代表的な実施例について説明を加える。
When performing a reset release operation in the semiconductor integrated circuit of the present invention, there is a method of applying a voltage higher than usual as an input to the reset release signal input terminal F and detecting it using a voltage dividing circuit in the input signal detection section G. By applying a signal that would never occur in normal use, such as applying a periodic signal that cannot be considered as an input or output and detecting it using a gate circuit, the reset release signal generator can be reset normally. It is necessary to operate H.
Of course, for this purpose, the reset release signal input terminal F
It is necessary to decide the configuration of the input signal detection section G depending on which existing terminal is selected. Representative examples will be explained below.

第1の実施例は、入力信号検出部Gを分圧回路
を用いて構成した例であり、第3図に具体的な回
路構成を示す。図示するように、リセツト解除信
号入力端子Fと接地点との間にMOSトランジス
タで構成されるMOS抵抗M1〜M5を直列に接続
し、MOS抵抗M4とM5の直列接続点Xに分圧出力
を得る構成の分圧回路によつて入力信号検出部G
が構成され、またリセツト解除信号発生部Hが増
幅器で構成され、さらに、リセツト解除制御部E
が2入力形のNORゲートで構成されている。こ
の回路構成の場合、リセツト解除信号入力端子F
として用いる端子は半導体集積回路入力端子ある
いは出力端子のいずれであつても良い。通常のレ
ベルの入力信号が印加されている場合、あるいは
通常の出力信号が出力されている場合は、信号が
ハイレベル、ローレベルのいずれであつても入力
信号検出部Gを構成する分圧回路によつて、この
信号が分圧されるために分圧後のレベルはリセツ
ト解除信号発生部Hを動作させうるレベルにはな
らない。
The first embodiment is an example in which the input signal detection section G is configured using a voltage dividing circuit, and the specific circuit configuration is shown in FIG. As shown in the figure, MOS resistors M 1 to M 5 made up of MOS transistors are connected in series between the reset release signal input terminal F and the ground point, and the series connection point X of MOS resistors M 4 and M 5 is connected in series. The input signal detection section G uses a voltage dividing circuit configured to obtain a divided voltage output.
, a reset release signal generating section H is composed of an amplifier, and a reset release control section E is constructed.
It consists of a two-input type NOR gate. In this circuit configuration, reset release signal input terminal F
The terminal used as a semiconductor integrated circuit may be either an input terminal or an output terminal. When a normal level input signal is applied or a normal output signal is output, the voltage divider circuit that constitutes the input signal detection section G regardless of whether the signal is high level or low level. Since this signal is voltage-divided, the voltage-divided level does not reach a level at which the reset release signal generating section H can be operated.

一方、リセツト解除信号を発生させるために、
リセツト解除信号入力端子Fに、通常の信号レベ
ルよりも高いレベルの信号を印加したときには、
入力信号検出部Gにおいて分圧され、X点に生じ
る信号レベルは、通常時のそれよりも高くなる。
On the other hand, in order to generate a reset release signal,
When a signal with a higher level than the normal signal level is applied to the reset release signal input terminal F,
The voltage is divided in the input signal detection section G, and the signal level generated at the X point is higher than that at normal times.

したがつて、この信号レベルでリセツト解除信
号発生部Hが動作するように入力信号のレベルを
考慮して分圧回路の分圧比を選定しておくなら
ば、リセツト解除信号発生部Hが働きリセツト解
除制御部Eによつてリセツト信号を端子Dに出力
させない動作が実行される。
Therefore, if the voltage division ratio of the voltage divider circuit is selected in consideration of the level of the input signal so that the reset release signal generation section H operates at this signal level, the reset release signal generation section H will work and reset. The release control section E performs an operation of not outputting the reset signal to the terminal D.

第2の実施例は、入力信号検出部Gとしてゲー
ト回路を用いた例であり第4図に具体的な回路構
成を示す。入力信号検出部Gは、図示するように
DフリツプフロツプFF1〜FF3の縦続接続体と、
各DフリツプフロツプFF1〜FF3の出力が入力さ
れるNANDゲートNによつて構成され、また、リ
セツト解除信号発生部Hはインバータで構成され
ている。
The second embodiment is an example in which a gate circuit is used as the input signal detection section G, and a specific circuit configuration is shown in FIG. The input signal detection section G includes a cascade connection of D flip-flops FF 1 to FF 3 as shown in the figure;
It is composed of NAND gates N to which the outputs of the D flip-flops FF 1 to FF 3 are input, and the reset release signal generating section H is composed of an inverter.

この回路の構成の場合は、リセツト解除信号入
力端子Fとして、出力される信号の性質が十分わ
かつている出力端子を用いるのが適当である。な
お、図示するゲート回路はある決まつた周期で、
内部クロツクの2パルス分だけ出力がハイレベル
になる端子を想定して構成している。通常の出力
状態では、ゲート回路で構成した入力信号検出部
Gの出力はハイレベルとはならないため、リセツ
ト解除信号発生部Hは動作せず、したがつて、端
子Dにリセツトを解除させるための信号は発生し
ない。
In the case of this circuit configuration, it is appropriate to use as the reset release signal input terminal F an output terminal whose nature of the output signal is well known. Note that the illustrated gate circuit operates at a certain fixed period,
The configuration is based on the assumption that the terminal outputs a high level for two pulses of the internal clock. In a normal output state, the output of the input signal detection section G made up of a gate circuit does not go to a high level, so the reset release signal generation section H does not operate. No signal is generated.

一方、リセツト解除信号を発生させるために
は、リセツト解除信号入力端子Fを内部クロツク
の3パルス分以上の時間にわたりハイレベルに固
定する入力を印加する。かかる入力信号の印加に
より、FF1〜FF3の各出力Qのレベルは内部クロ
ツクが3パルス到来したところで全て“1”レベ
ルとなり、このためNANDゲートNの出力、すな
わち、入力信号検出部Gの出力が“O”レベルと
なる。したがつて、リセツト解除信号発生部Hを
形成するインバータの出力レベルが“1”レベル
となり、リセツト解除制御部Eの出力、すなわ
ち、端子Dの論理レベルを“O”とし、リセツト
回路の動作を停止させる動作状態が成立する。
On the other hand, in order to generate a reset release signal, an input that fixes the reset release signal input terminal F at a high level for a time equal to or longer than three pulses of the internal clock is applied. By applying such an input signal, the level of each output Q of FF 1 to FF 3 becomes "1" level when three pulses of the internal clock arrive, and therefore the output of the NAND gate N, that is, the level of the output Q of the input signal detection section G The output becomes "O" level. Therefore, the output level of the inverter forming the reset release signal generation section H becomes "1" level, and the output of the reset release control section E, that is, the logic level of the terminal D is set to "O", and the operation of the reset circuit is started. The operating state to be stopped is established.

このように、入力信号検出部Gとしてゲート回
路を用いると、ゲートの組合せによつて目的とす
る半導体集積回路に適した、入力信号検出部Gを
構成できる。
In this way, when a gate circuit is used as the input signal detection section G, the input signal detection section G suitable for the intended semiconductor integrated circuit can be constructed by combining the gates.

以上のように、本発明の半導体集積回路では、
リセツト解除のための信号を入力するための新た
な入力端子を増設する事なしにリセツトを解除さ
せることができ、半導体集積回路の電源電圧検出
部及びリセツト信号発生部を除いた部分の動作範
囲の正確な測定が可能になる。なお、当然のこと
ではあるが電源電圧検出部及びリセツト信号発生
部を含めた動作範囲も測定が可能である。したが
つて、半導体集積回路について、低電源電圧時に
正しくリセツト回路が動作する事を検査してこれ
を保障でき、半導体集積回路の出荷時の品質保証
が確実に行なえるようになり、工業的に大きな効
果を奏することができる。
As described above, in the semiconductor integrated circuit of the present invention,
It is possible to cancel the reset without adding a new input terminal for inputting the signal for canceling the reset, and it is possible to cancel the reset without adding a new input terminal for inputting the signal for canceling the reset. Accurate measurement becomes possible. Note that, as a matter of course, it is also possible to measure the operating range including the power supply voltage detection section and the reset signal generation section. Therefore, for semiconductor integrated circuits, it is possible to inspect and guarantee that the reset circuit operates correctly at low power supply voltages, and it is now possible to reliably guarantee the quality of semiconductor integrated circuits at the time of shipment. It can have a great effect.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の半導体集積回路に内蔵されるリ
セツト回路制御部のブロツク図、第2図はリセツ
ト解除を行なう事を可能とする本発明の一実施例
にかかる半導体集積回路に内蔵されるリセツト回
路制御部のブロツク図、第3図、第4図は本発明
の集積回路におけるリセツト解除部の具体例を示
す回路図である。 A……電源電圧端子、B……電源電圧検出部、
C……リセツト信号発生部、D…集積回路内部リ
セツト回路への入力端子、E……リセツト解除制
御部、F……リセツト解除信号入力端子、G……
入力信号検出部、H……リセツト解除信号発生
部、M1〜M5……MOS抵抗、FF1〜FF3……フリ
ツプフロツプ、N……NANDゲート。
Fig. 1 is a block diagram of a reset circuit control unit built into a conventional semiconductor integrated circuit, and Fig. 2 is a block diagram of a reset circuit control unit built into a semiconductor integrated circuit according to an embodiment of the present invention that enables reset cancellation. The block diagrams of the circuit control section, FIGS. 3 and 4, are circuit diagrams showing specific examples of the reset canceling section in the integrated circuit of the present invention. A...Power supply voltage terminal, B...Power supply voltage detection section,
C...Reset signal generation unit, D...Input terminal to the integrated circuit internal reset circuit, E...Reset release control unit, F...Reset release signal input terminal, G...
Input signal detection section, H...Reset release signal generation section, M1 to M5 ...MOS resistors, FF1 to FF3 ...Flip-flop, N...NAND gate.

Claims (1)

【特許請求の範囲】[Claims] 1 電源電圧検出部、同電源電圧検出部の出力に
応じてリセツト信号を発生するリセツト信号発生
部、同リセツト信号発生部の出力でリセツト動作
を実行するリセツト回路部、入力端子もしくは出
力端子に結合され、通常の入力信号もしくは出力
信号とは形態が異なる制御信号にのみ応答し、前
記制御信号の印加時にのみ出力を発生する制御信
号検出部および同制御信号検出部の出力が入力さ
れ、前記リセツト回路の動作解除用信号を出力す
るリセツト解除信号発生部を内蔵することを特徴
とする半導体集積回路。
1 A power supply voltage detection section, a reset signal generation section that generates a reset signal in response to the output of the power supply voltage detection section, a reset circuit section that performs a reset operation using the output of the reset signal generation section, coupled to an input terminal or an output terminal. A control signal detection unit that responds only to a control signal having a different form from a normal input signal or output signal and generates an output only when the control signal is applied, and the output of the control signal detection unit are input, and the reset 1. A semiconductor integrated circuit comprising a built-in reset release signal generator that outputs a signal for canceling circuit operation.
JP56102745A 1981-07-01 1981-07-01 Semiconductor integrated circuit Granted JPS585026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56102745A JPS585026A (en) 1981-07-01 1981-07-01 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56102745A JPS585026A (en) 1981-07-01 1981-07-01 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS585026A JPS585026A (en) 1983-01-12
JPS6261172B2 true JPS6261172B2 (en) 1987-12-19

Family

ID=14335759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56102745A Granted JPS585026A (en) 1981-07-01 1981-07-01 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS585026A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229113A (en) * 1985-04-03 1986-10-13 Nec Corp Timing signal generating circuit
JPS62130023A (en) * 1985-12-02 1987-06-12 Matsushita Electric Ind Co Ltd Initializing method for logic circuit
JP5481871B2 (en) * 2009-02-17 2014-04-23 富士通セミコンダクター株式会社 Multi-power supply system, semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS585026A (en) 1983-01-12

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