JPS6260756B2 - - Google Patents
Info
- Publication number
- JPS6260756B2 JPS6260756B2 JP13802480A JP13802480A JPS6260756B2 JP S6260756 B2 JPS6260756 B2 JP S6260756B2 JP 13802480 A JP13802480 A JP 13802480A JP 13802480 A JP13802480 A JP 13802480A JP S6260756 B2 JPS6260756 B2 JP S6260756B2
- Authority
- JP
- Japan
- Prior art keywords
- bubble
- layer
- pattern
- magnetization
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005415 magnetization Effects 0.000 claims description 40
- 238000012546 transfer Methods 0.000 claims description 36
- 230000005291 magnetic effect Effects 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 16
- 230000005381 magnetic domain Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 10
- -1 yttrium ions Chemical class 0.000 description 9
- 230000014759 maintenance of location Effects 0.000 description 8
- 229910000889 permalloy Inorganic materials 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 238000002513 implantation Methods 0.000 description 2
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical group [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13802480A JPS5764387A (en) | 1980-10-02 | 1980-10-02 | Bubble magnetic domain element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13802480A JPS5764387A (en) | 1980-10-02 | 1980-10-02 | Bubble magnetic domain element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5764387A JPS5764387A (en) | 1982-04-19 |
| JPS6260756B2 true JPS6260756B2 (enrdf_load_stackoverflow) | 1987-12-17 |
Family
ID=15212262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13802480A Granted JPS5764387A (en) | 1980-10-02 | 1980-10-02 | Bubble magnetic domain element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5764387A (enrdf_load_stackoverflow) |
-
1980
- 1980-10-02 JP JP13802480A patent/JPS5764387A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5764387A (en) | 1982-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5916358B2 (ja) | 磁性層の製造方法 | |
| US4070658A (en) | Ion implanted bubble propagation structure | |
| JPS6260756B2 (enrdf_load_stackoverflow) | ||
| US4343038A (en) | Magnetic bubble domain structure | |
| US4578321A (en) | Altering the switching threshold of a magnetic material | |
| US4525808A (en) | Hybrid magnetic bubble memory device | |
| US4434476A (en) | Magnetic bubble memory device and method for operating the same | |
| JPS636950B2 (enrdf_load_stackoverflow) | ||
| JP2763920B2 (ja) | ブロッホラインメモリデバイス | |
| JP2682672B2 (ja) | ブロッホラインメモリデバイス | |
| JPS636949B2 (enrdf_load_stackoverflow) | ||
| JP2798976B2 (ja) | ブロッホラインメモリデバイス | |
| JPS59139138A (ja) | 磁気記録媒体及びその製造方法 | |
| JP2763917B2 (ja) | ブロッホラインメモリデバイス | |
| JPH033187A (ja) | ブロッホラインメモリデバイス | |
| JPH01256049A (ja) | 光磁気記録媒体の製造方法 | |
| JPH0366755B2 (enrdf_load_stackoverflow) | ||
| JPS6248316B2 (enrdf_load_stackoverflow) | ||
| JPS6244843B2 (enrdf_load_stackoverflow) | ||
| JPS5867006A (ja) | 積層垂直磁化膜 | |
| JPS5923506A (ja) | 磁気バブルメモリ素子及びその製造方法 | |
| JPS5846793B2 (ja) | 磁気バブル素子 | |
| JPS59127292A (ja) | イオン打込み型磁気バブルメモリ素子 | |
| JPS59151378A (ja) | 磁気バブル素子製造方法 | |
| Jo et al. | Nearly isotropic propagation of 0.5 micrometer bubbles in contiguous disk devices |