JPS6259468B2 - - Google Patents

Info

Publication number
JPS6259468B2
JPS6259468B2 JP55165607A JP16560780A JPS6259468B2 JP S6259468 B2 JPS6259468 B2 JP S6259468B2 JP 55165607 A JP55165607 A JP 55165607A JP 16560780 A JP16560780 A JP 16560780A JP S6259468 B2 JPS6259468 B2 JP S6259468B2
Authority
JP
Japan
Prior art keywords
gate electrode
melting point
polycrystalline silicon
point metal
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55165607A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5789254A (en
Inventor
Noriaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55165607A priority Critical patent/JPS5789254A/ja
Publication of JPS5789254A publication Critical patent/JPS5789254A/ja
Publication of JPS6259468B2 publication Critical patent/JPS6259468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP55165607A 1980-11-25 1980-11-25 Manufacture of semiconductor device Granted JPS5789254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55165607A JPS5789254A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55165607A JPS5789254A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5789254A JPS5789254A (en) 1982-06-03
JPS6259468B2 true JPS6259468B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-12-11

Family

ID=15815567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55165607A Granted JPS5789254A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5789254A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682967U (ja) * 1993-05-13 1994-11-29 株式会社ファンケル マットレス

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935475A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
US4751198A (en) * 1985-09-11 1988-06-14 Texas Instruments Incorporated Process for making contacts and interconnections using direct-reacted silicide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682967U (ja) * 1993-05-13 1994-11-29 株式会社ファンケル マットレス

Also Published As

Publication number Publication date
JPS5789254A (en) 1982-06-03

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