JPS6258675B2 - - Google Patents
Info
- Publication number
- JPS6258675B2 JPS6258675B2 JP57026241A JP2624182A JPS6258675B2 JP S6258675 B2 JPS6258675 B2 JP S6258675B2 JP 57026241 A JP57026241 A JP 57026241A JP 2624182 A JP2624182 A JP 2624182A JP S6258675 B2 JPS6258675 B2 JP S6258675B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- hydrogen
- amorphous
- hydrogen concentration
- hydrogenated silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photoreceptors In Electrophotography (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57026241A JPS58142582A (ja) | 1982-02-19 | 1982-02-19 | 非晶質水素化シリコン光導電膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57026241A JPS58142582A (ja) | 1982-02-19 | 1982-02-19 | 非晶質水素化シリコン光導電膜 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63233012A Division JPH01164074A (ja) | 1988-09-16 | 1988-09-16 | 非晶質水素化シリコン光導電膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58142582A JPS58142582A (ja) | 1983-08-24 |
| JPS6258675B2 true JPS6258675B2 (ko) | 1987-12-07 |
Family
ID=12187800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57026241A Granted JPS58142582A (ja) | 1982-02-19 | 1982-02-19 | 非晶質水素化シリコン光導電膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58142582A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6090342A (ja) * | 1983-10-25 | 1985-05-21 | Matsushita Electric Ind Co Ltd | 光導電体の製造方法 |
| US4855950A (en) * | 1987-04-17 | 1989-08-08 | Kanegafuchi Chemical Industry Company, Limited | Optical storage apparatus including a reversible, doping modulated, multilayer, amorphous element |
| JP2535184B2 (ja) * | 1987-10-29 | 1996-09-18 | 松下電器産業株式会社 | 光電変換装置 |
-
1982
- 1982-02-19 JP JP57026241A patent/JPS58142582A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58142582A (ja) | 1983-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5336623A (en) | Process for producing integrated solar cell | |
| KR860001163B1 (ko) | 박막 태양전지 | |
| KR100659044B1 (ko) | 산화아연 박막을 가지는 태양전지 및 그 제조 방법 | |
| EP0117980B1 (en) | Process for forming passivation film on photoelectric conversion device and the device produced thereby | |
| US5419783A (en) | Photovoltaic device and manufacturing method therefor | |
| US4339470A (en) | Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer | |
| Isomura et al. | Device-grade amorphous silicon prepared by high-pressure plasma | |
| JPS6258675B2 (ko) | ||
| US4531015A (en) | PIN Amorphous silicon solar cell with nitrogen compensation | |
| JPH01201968A (ja) | 光電変換装置 | |
| US4451538A (en) | High hydrogen amorphous silicon | |
| US4680607A (en) | Photovoltaic cell | |
| US5278015A (en) | Amorphous silicon film, its production and photo semiconductor device utilizing such a film | |
| JP2550888B2 (ja) | 太陽電池 | |
| JPH0458192B2 (ko) | ||
| JPH0312973A (ja) | 非晶質薄膜太陽電池 | |
| JP2775460B2 (ja) | 非晶質太陽電池の製造方法 | |
| JPH0364973A (ja) | 光起電力素子 | |
| JPH022183A (ja) | 低い光水準で使用可能な光電池 | |
| US5152833A (en) | Amorphous silicon film, its production and photo semiconductor device utilizing such a film | |
| KR930011356B1 (ko) | 비정질실리콘 태양전지 및 그 제조방법 | |
| JP2822358B2 (ja) | 薄膜太陽電池の製造方法 | |
| JPH0548127A (ja) | 非晶質シリコン太陽電池及びその製造方法 | |
| JPH0542141B2 (ko) | ||
| JPH0445991B2 (ko) |