JPS6258040U - - Google Patents
Info
- Publication number
- JPS6258040U JPS6258040U JP14852785U JP14852785U JPS6258040U JP S6258040 U JPS6258040 U JP S6258040U JP 14852785 U JP14852785 U JP 14852785U JP 14852785 U JP14852785 U JP 14852785U JP S6258040 U JPS6258040 U JP S6258040U
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor element
- protective glass
- protective
- glass film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Description
第１図は本考案に係る半導体装置の一実施例を
示す縦断面図、第２図乃至第５図は第１図の半導
体装置の製造における保護窒化膜の形成を説明す
るための各工程図である。第６図は従来の半導体
装置の一例を示す縦断面図である。
１，２……一導電型基板、６……酸化膜、７…
…保護ガラス膜、８，９，１０……電極層、１２
……保護窒化膜。
FIG. 1 is a vertical cross-sectional view showing an embodiment of a semiconductor device according to the present invention, and FIGS. 2 to 5 are process diagrams for explaining the formation of a protective nitride film in the manufacture of the semiconductor device shown in FIG. It is. FIG. 6 is a longitudinal sectional view showing an example of a conventional semiconductor device. 1, 2... one conductivity type substrate, 6... oxide film, 7...
...Protective glass film, 8, 9, 10... Electrode layer, 12
...Protective nitride film.
Claims (1)
半導体素子を形成し、該半導体素子の接合部に酸
化膜及び保護ガラス膜を積層して被着形成すると
共に、その窓明け部分に外部引出し用の電極層を
被着形成したものにおいて、 上記保護ガラス膜の全表面を保護窒化膜で被覆
したことを特徴とする半導体装置。[Claim for Utility Model Registration] A semiconductor element is formed by selectively diffusing impurities of another conductivity type into one conductive substrate, and an oxide film and a protective glass film are laminated and deposited on the bonding portion of the semiconductor element. , a semiconductor device having an electrode layer for external extraction formed on the opening portion of the window, characterized in that the entire surface of the protective glass film is covered with a protective nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14852785U JPS6258040U (en) | 1985-09-27 | 1985-09-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14852785U JPS6258040U (en) | 1985-09-27 | 1985-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6258040U true JPS6258040U (en) | 1987-04-10 |
Family
ID=31062881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14852785U Pending JPS6258040U (en) | 1985-09-27 | 1985-09-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6258040U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685829A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | Passivation structure for semiconductor device |
-
1985
- 1985-09-27 JP JP14852785U patent/JPS6258040U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685829A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | Passivation structure for semiconductor device |