JPS61104561U - - Google Patents
Info
- Publication number
- JPS61104561U JPS61104561U JP18930884U JP18930884U JPS61104561U JP S61104561 U JPS61104561 U JP S61104561U JP 18930884 U JP18930884 U JP 18930884U JP 18930884 U JP18930884 U JP 18930884U JP S61104561 U JPS61104561 U JP S61104561U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- insulating substrate
- transparent insulating
- transparent
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
Landscapes
- Optical Transform (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
第１図は本考案の一実施例の断面図、第２図は
従来例を示し、ａは平面図、ｂはａのＡ―Ａ線断
面図である。
１：ガラス基板、２：透明電極、２１：検出部
、３：非晶質シリコン層、４：金属電極層、６：
入射光、７：しや光金属層、８：窓。
FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a conventional example, in which a is a plan view and b is a sectional view taken along line A--A of a. 1: Glass substrate, 2: Transparent electrode, 21: Detection section, 3: Amorphous silicon layer, 4: Metal electrode layer, 6:
Incident light, 7: Shiny metal layer, 8: Window.
Claims (1)
数の検出部を形成する透明電極とその上に積層さ
れる帯状の半導体薄膜および対向金属電極層とを
有するものにおいて、対向金属電極層が半導体薄
膜および透明絶縁基板の一方の側面を経て透明絶
縁基板の光入射面に延び、該面を透明電極の検出
部に対向する領域を除いて被覆していることを特
徴とする薄膜半導体光検出装置。 In a device having a transparent electrode forming a plurality of detecting portions arranged in a row at equal intervals on a transparent insulating substrate, a strip-shaped semiconductor thin film laminated thereon, and a counter metal electrode layer, the counter metal electrode layer is a semiconductor A thin film semiconductor photodetecting device, characterized in that the thin film extends through one side of the thin film and the transparent insulating substrate to the light incident surface of the transparent insulating substrate, and covers the surface except for a region of the transparent electrode facing the detection section. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18930884U JPS61104561U (en) | 1984-12-13 | 1984-12-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18930884U JPS61104561U (en) | 1984-12-13 | 1984-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61104561U true JPS61104561U (en) | 1986-07-03 |
Family
ID=30746759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18930884U Pending JPS61104561U (en) | 1984-12-13 | 1984-12-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61104561U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01220473A (en) * | 1988-02-29 | 1989-09-04 | Kyocera Corp | Photosensor |
-
1984
- 1984-12-13 JP JP18930884U patent/JPS61104561U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01220473A (en) * | 1988-02-29 | 1989-09-04 | Kyocera Corp | Photosensor |
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