JPS6255620B2 - - Google Patents
Info
- Publication number
- JPS6255620B2 JPS6255620B2 JP55048808A JP4880880A JPS6255620B2 JP S6255620 B2 JPS6255620 B2 JP S6255620B2 JP 55048808 A JP55048808 A JP 55048808A JP 4880880 A JP4880880 A JP 4880880A JP S6255620 B2 JPS6255620 B2 JP S6255620B2
- Authority
- JP
- Japan
- Prior art keywords
- lean
- thimble
- sputtering
- platinum
- rich
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 58
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 48
- 238000004544 sputter deposition Methods 0.000 claims description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 33
- 229910052697 platinum Inorganic materials 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 230000004044 response Effects 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000007784 solid electrolyte Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000002244 precipitate Substances 0.000 claims description 3
- 239000012300 argon atmosphere Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 230000008901 benefit Effects 0.000 description 8
- 230000032683 aging Effects 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910002078 fully stabilized zirconia Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000717 platinum sputter deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000005070 ripening Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measuring Oxygen Concentration In Cells (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3074879A | 1979-04-17 | 1979-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55141666A JPS55141666A (en) | 1980-11-05 |
| JPS6255620B2 true JPS6255620B2 (de) | 1987-11-20 |
Family
ID=21855822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4880880A Granted JPS55141666A (en) | 1979-04-17 | 1980-04-15 | Sputtering electrode for waste gas oxygen sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55141666A (de) |
-
1980
- 1980-04-15 JP JP4880880A patent/JPS55141666A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55141666A (en) | 1980-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4253931A (en) | Electrode sputtering process for exhaust gas oxygen sensor | |
| US3318790A (en) | Production of thin organic polymer by screened glow discharge | |
| US4393434A (en) | Capacitance humidity sensor | |
| US4400255A (en) | Control of electron bombardment of the exhaust oxygen sensor during electrode sputtering | |
| US4521287A (en) | High rate sputtering of exhaust oxygen sensor electrode | |
| JPS6238655B2 (de) | ||
| US4244798A (en) | Exhaust electrode process for exhaust gas oxygen sensor | |
| JPS6255620B2 (de) | ||
| US4276142A (en) | Electrochemical sensor, particularly for internal combustion engine exhaust gas composition determination, and method of its manufacture | |
| CA1124679A (en) | Electrode sputtering process for exhaust gas oxygen sensor | |
| Karim et al. | Deposition of tin-doped indium oxide films by a modified reactive magnetron sputtering process | |
| US4303490A (en) | Exhaust electrode process for exhaust gas oxygen sensor | |
| US3664943A (en) | Method of producing tantalum nitride film resistors | |
| JPH11295263A (ja) | ガスセンサ素子及びその製法 | |
| US3644188A (en) | Anodizable cermet film components and their manufacture | |
| US3455724A (en) | Processes of preparing vanadium suboxide coatings | |
| JPH02189816A (ja) | 透明導電膜の形成方法 | |
| CA1124678A (en) | Exhaust electrode process for exhaust gas oxygen sensor | |
| JPS6255621B2 (de) | ||
| JPH0234775A (ja) | 真空成膜装置 | |
| JPS58204173A (ja) | 蒸着装置および蒸着方法 | |
| JPH0238555B2 (ja) | Ensekigaisenhiitaanarabinisonoseizoho | |
| JP3131077B2 (ja) | 金属酸化物膜の製法 | |
| JPH0454445A (ja) | 酸素センサの製造方法 | |
| JPH0211756A (ja) | 被膜の形成方法 |