JPS6255311B2 - - Google Patents
Info
- Publication number
- JPS6255311B2 JPS6255311B2 JP16468978A JP16468978A JPS6255311B2 JP S6255311 B2 JPS6255311 B2 JP S6255311B2 JP 16468978 A JP16468978 A JP 16468978A JP 16468978 A JP16468978 A JP 16468978A JP S6255311 B2 JPS6255311 B2 JP S6255311B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- insulating film
- forming
- drain region
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16468978A JPS5591174A (en) | 1978-12-28 | 1978-12-28 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16468978A JPS5591174A (en) | 1978-12-28 | 1978-12-28 | Insulated gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5591174A JPS5591174A (en) | 1980-07-10 |
JPS6255311B2 true JPS6255311B2 (zh) | 1987-11-19 |
Family
ID=15797976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16468978A Granted JPS5591174A (en) | 1978-12-28 | 1978-12-28 | Insulated gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591174A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0371891B2 (zh) * | 1987-09-07 | 1991-11-14 | Hitachi Medical Corp |
-
1978
- 1978-12-28 JP JP16468978A patent/JPS5591174A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0371891B2 (zh) * | 1987-09-07 | 1991-11-14 | Hitachi Medical Corp |
Also Published As
Publication number | Publication date |
---|---|
JPS5591174A (en) | 1980-07-10 |
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