JPS6253558U - - Google Patents

Info

Publication number
JPS6253558U
JPS6253558U JP14469685U JP14469685U JPS6253558U JP S6253558 U JPS6253558 U JP S6253558U JP 14469685 U JP14469685 U JP 14469685U JP 14469685 U JP14469685 U JP 14469685U JP S6253558 U JPS6253558 U JP S6253558U
Authority
JP
Japan
Prior art keywords
ions
ion
wafer
ion implantation
implants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14469685U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14469685U priority Critical patent/JPS6253558U/ja
Publication of JPS6253558U publication Critical patent/JPS6253558U/ja
Pending legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)
JP14469685U 1985-09-21 1985-09-21 Pending JPS6253558U (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14469685U JPS6253558U (ru) 1985-09-21 1985-09-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14469685U JPS6253558U (ru) 1985-09-21 1985-09-21

Publications (1)

Publication Number Publication Date
JPS6253558U true JPS6253558U (ru) 1987-04-02

Family

ID=31055539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14469685U Pending JPS6253558U (ru) 1985-09-21 1985-09-21

Country Status (1)

Country Link
JP (1) JPS6253558U (ru)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196465A (ja) * 1999-12-13 2006-07-27 Semequip Inc イオン注入イオン源、システム、および方法
WO2012068034A1 (en) * 2010-11-19 2012-05-24 Corning Incorporated Semiconductor structure made using improved multiple ion implantation process
JP2014154250A (ja) * 2013-02-05 2014-08-25 Japan Atomic Energy Agency イオンの生成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787055A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Ion implantation device
JPS5923152B2 (ja) * 1976-07-06 1984-05-31 ソニー株式会社 映像信号の記録再生装置
JPS5923151B2 (ja) * 1976-02-17 1984-05-31 松下電器産業株式会社 カラ−撮像装置
JPS61133544A (ja) * 1984-11-30 1986-06-20 Toshiba Corp イオン打込み装置
JPS6261257A (ja) * 1985-09-09 1987-03-17 Tokyo Electron Ltd イオン注入装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923151B2 (ja) * 1976-02-17 1984-05-31 松下電器産業株式会社 カラ−撮像装置
JPS5923152B2 (ja) * 1976-07-06 1984-05-31 ソニー株式会社 映像信号の記録再生装置
JPS5787055A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Ion implantation device
JPS61133544A (ja) * 1984-11-30 1986-06-20 Toshiba Corp イオン打込み装置
JPS6261257A (ja) * 1985-09-09 1987-03-17 Tokyo Electron Ltd イオン注入装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196465A (ja) * 1999-12-13 2006-07-27 Semequip Inc イオン注入イオン源、システム、および方法
WO2012068034A1 (en) * 2010-11-19 2012-05-24 Corning Incorporated Semiconductor structure made using improved multiple ion implantation process
CN103403836A (zh) * 2010-11-19 2013-11-20 康宁股份有限公司 使用改进的多离子注入工艺制造的半导体结构
JP2014154250A (ja) * 2013-02-05 2014-08-25 Japan Atomic Energy Agency イオンの生成方法

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