JPS6252020B2 - - Google Patents
Info
- Publication number
- JPS6252020B2 JPS6252020B2 JP12275185A JP12275185A JPS6252020B2 JP S6252020 B2 JPS6252020 B2 JP S6252020B2 JP 12275185 A JP12275185 A JP 12275185A JP 12275185 A JP12275185 A JP 12275185A JP S6252020 B2 JPS6252020 B2 JP S6252020B2
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- melting point
- purity
- anion exchange
- point metals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 20
- 150000002739 metals Chemical class 0.000 claims description 18
- 230000008018 melting Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 14
- 229910052700 potassium Inorganic materials 0.000 claims description 13
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- 239000003957 anion exchange resin Substances 0.000 claims description 11
- 239000011591 potassium Substances 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 8
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 7
- 229910001385 heavy metal Inorganic materials 0.000 claims description 5
- 150000003109 potassium Chemical class 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000000746 purification Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000012046 mixed solvent Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- -1 vacuum tubes Substances 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910021563 chromium fluoride Inorganic materials 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- QHEDSQMUHIMDOL-UHFFFAOYSA-J hafnium(4+);tetrafluoride Chemical compound F[Hf](F)(F)F QHEDSQMUHIMDOL-UHFFFAOYSA-J 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- OMQSJNWFFJOIMO-UHFFFAOYSA-J zirconium tetrafluoride Chemical compound F[Zr](F)(F)F OMQSJNWFFJOIMO-UHFFFAOYSA-J 0.000 description 1
Landscapes
- Manufacture And Refinement Of Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12275185A JPS61281831A (ja) | 1985-06-07 | 1985-06-07 | 高純度タンタルの精製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12275185A JPS61281831A (ja) | 1985-06-07 | 1985-06-07 | 高純度タンタルの精製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61281831A JPS61281831A (ja) | 1986-12-12 |
| JPS6252020B2 true JPS6252020B2 (ko) | 1987-11-02 |
Family
ID=14843698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12275185A Granted JPS61281831A (ja) | 1985-06-07 | 1985-06-07 | 高純度タンタルの精製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61281831A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2688452B2 (ja) * | 1990-05-17 | 1997-12-10 | キャボット コーポレイション | 高表面積、低金属不純物のタンタル粉末の製造方法 |
| EP1287172B1 (en) | 2000-05-22 | 2008-10-29 | Cabot Corporation | High purity niobium and products containing the same, and methods of making the same |
-
1985
- 1985-06-07 JP JP12275185A patent/JPS61281831A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61281831A (ja) | 1986-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4058777B2 (ja) | 薄膜形成用高純度ルテニウム焼結体スパッタリングターゲット及び同ターゲットをスパッタリングすることによって形成される薄膜 | |
| EP0137166B1 (en) | High-purity molybdenum target and high-purity molybdenum silicide target for lsi electrodes and process for producing the same | |
| KR100860957B1 (ko) | 고순도 코발트의 제조 방법 | |
| WO2000004202A1 (fr) | Procede de preparation d'une cible de pulverisation cathodique en ruthenium tres pur | |
| EP0197271B1 (en) | Methods for preparing high-purity molybdenum or tungsten powder and high-purity oxides powder of the same | |
| JPH0621346B2 (ja) | 高純度金属タンタル製ターゲットの製造方法 | |
| JPH01502976A (ja) | スカンジウムとトリウムの分離のためのイオン交換方法 | |
| JP2008115063A (ja) | 高純度ハフニウム材料および溶媒抽出法を用いた該材料の製造方法。 | |
| KR100854264B1 (ko) | 고순도 철의 제조 방법 | |
| JP3031474B2 (ja) | 高純度タンタル材，タンタルターゲット，薄膜および半導体装置の製造方法 | |
| JPS6252020B2 (ko) | ||
| JPH0564683B2 (ko) | ||
| JP3206432B2 (ja) | 低α低酸素金属スカンジウムとその製造方法 | |
| JP2001081507A (ja) | 高純度コバルト粉及びその製造方法 | |
| JPH0547976B2 (ko) | ||
| JPH042618A (ja) | 弗化タンタルカリウムの精製方法 | |
| JPS61107728A (ja) | 薄膜形成用材およびその製造方法 | |
| JPH01192728A (ja) | 高純度フルオロタンタル酸カリウムの製造方法 | |
| JPH01242702A (ja) | タンタル粉末及びその製造法 | |
| JPH08127890A (ja) | 高純度コバルトの製造方法 | |
| JPS61209918A (ja) | モリブデン又はタングステン溶液の濃縮装置 | |
| JPS6261094B2 (ko) | ||
| JPS61201707A (ja) | 高純度のモリブデン又はタングステン粉末の製造方法 | |
| JP3411212B2 (ja) | 薄膜形成用高純度Ｉｒ材料の製造方法 | |
| Douglas et al. | Recovery of tungsten and rhenium |