JPS6250974B2 - - Google Patents
Info
- Publication number
- JPS6250974B2 JPS6250974B2 JP53162689A JP16268978A JPS6250974B2 JP S6250974 B2 JPS6250974 B2 JP S6250974B2 JP 53162689 A JP53162689 A JP 53162689A JP 16268978 A JP16268978 A JP 16268978A JP S6250974 B2 JPS6250974 B2 JP S6250974B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide film
- film
- semiconductor substrate
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 39
- 238000007747 plating Methods 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000011521 glass Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 21
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 19
- 239000011574 phosphorus Substances 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 42
- 238000005530 etching Methods 0.000 description 23
- 229910052759 nickel Inorganic materials 0.000 description 21
- 239000007788 liquid Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000000087 stabilizing effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- CQVDKGFMVXRRAI-UHFFFAOYSA-J Cl[Au](Cl)(Cl)Cl Chemical compound Cl[Au](Cl)(Cl)Cl CQVDKGFMVXRRAI-UHFFFAOYSA-J 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16268978A JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16268978A JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5588325A JPS5588325A (en) | 1980-07-04 |
| JPS6250974B2 true JPS6250974B2 (xx) | 1987-10-28 |
Family
ID=15759419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16268978A Granted JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5588325A (xx) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8202009A (nl) * | 1982-05-14 | 1983-12-01 | Philips Nv | Werkwijze voor de vervaardiging van fijn-gestructureerde metaalpatronen op metaal- of halfgeleider oppervlak. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5371369U (xx) * | 1976-11-17 | 1978-06-15 |
-
1978
- 1978-12-27 JP JP16268978A patent/JPS5588325A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5588325A (en) | 1980-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2615390B2 (ja) | 炭化シリコン電界効果トランジスタの製造方法 | |
| US3493820A (en) | Airgap isolated semiconductor device | |
| US3760242A (en) | Coated semiconductor structures and methods of forming protective coverings on such structures | |
| US3454835A (en) | Multiple semiconductor device | |
| US3410736A (en) | Method of forming a glass coating on semiconductors | |
| US4039359A (en) | Method of manufacturing a flattened semiconductor device | |
| US3541676A (en) | Method of forming field-effect transistors utilizing doped insulators as activator source | |
| US4125427A (en) | Method of processing a semiconductor | |
| US4040893A (en) | Method of selective etching of materials utilizing masks of binary silicate glasses | |
| US3434896A (en) | Process for etching silicon monoxide and etchant solutions therefor | |
| EP0015064B1 (en) | Process for producing bipolar semiconductor device | |
| US3759762A (en) | Method of forming integrated circuits utilizing low resistance valueslow temperature deposited oxides and shallow junctions | |
| JPS6250974B2 (xx) | ||
| US3479736A (en) | Method of making a semiconductor device | |
| JPS6234152B2 (xx) | ||
| JP3340633B2 (ja) | ガラス被覆半導体装置の電極形成方法 | |
| JP3032244B2 (ja) | 半導体装置の製造方法 | |
| JPS5925245A (ja) | 半導体装置の製造方法 | |
| US3645807A (en) | Method for manufacturing a semiconductor device | |
| JPS6256654B2 (xx) | ||
| JPH0232537A (ja) | 半導体装置の製造方法 | |
| JPS61147550A (ja) | 半導体装置の製造方法 | |
| JPS5889869A (ja) | 半導体装置の製造方法 | |
| JPS6131616B2 (xx) | ||
| JPS6279625A (ja) | 半導体装置の製造方法 |