JPS6249730B2 - - Google Patents

Info

Publication number
JPS6249730B2
JPS6249730B2 JP53052241A JP5224178A JPS6249730B2 JP S6249730 B2 JPS6249730 B2 JP S6249730B2 JP 53052241 A JP53052241 A JP 53052241A JP 5224178 A JP5224178 A JP 5224178A JP S6249730 B2 JPS6249730 B2 JP S6249730B2
Authority
JP
Japan
Prior art keywords
wafer
layer
semiconductor
gallium arsenide
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53052241A
Other languages
English (en)
Japanese (ja)
Other versions
JPS53139979A (en
Inventor
Kumaa Paanchori Ranjetsuto
Jeimuzu Kuuruman Goodon
Hawaado Fuiriitsupusu Dagurasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of JPS53139979A publication Critical patent/JPS53139979A/ja
Publication of JPS6249730B2 publication Critical patent/JPS6249730B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP5224178A 1977-05-11 1978-04-28 Iiiiv compound semiconductor structure and method of producing same Granted JPS53139979A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/796,118 US4170666A (en) 1977-05-11 1977-05-11 Method for reducing surface recombination velocities in III-V compound semiconductors

Publications (2)

Publication Number Publication Date
JPS53139979A JPS53139979A (en) 1978-12-06
JPS6249730B2 true JPS6249730B2 (enExample) 1987-10-21

Family

ID=25167346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5224178A Granted JPS53139979A (en) 1977-05-11 1978-04-28 Iiiiv compound semiconductor structure and method of producing same

Country Status (2)

Country Link
US (1) US4170666A (enExample)
JP (1) JPS53139979A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
IT1171402B (it) * 1981-07-20 1987-06-10 Selenia Ind Eletroniche Associ Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata
US5192695A (en) * 1991-07-09 1993-03-09 Fermionics Corporation Method of making an infrared detector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLID STOTE COMMUNICATIONS=1971 *

Also Published As

Publication number Publication date
JPS53139979A (en) 1978-12-06
US4170666A (en) 1979-10-09

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