JPS53139979A - Iiiiv compound semiconductor structure and method of producing same - Google Patents

Iiiiv compound semiconductor structure and method of producing same

Info

Publication number
JPS53139979A
JPS53139979A JP5224178A JP5224178A JPS53139979A JP S53139979 A JPS53139979 A JP S53139979A JP 5224178 A JP5224178 A JP 5224178A JP 5224178 A JP5224178 A JP 5224178A JP S53139979 A JPS53139979 A JP S53139979A
Authority
JP
Japan
Prior art keywords
iiiiv
compound semiconductor
semiconductor structure
producing same
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5224178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249730B2 (enExample
Inventor
Kumaa Paanchiyori Ranjietsuto
Jieimuzu Kuuruman Goodon
Hawaado Fuiriitsupusu Dagurasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of JPS53139979A publication Critical patent/JPS53139979A/ja
Publication of JPS6249730B2 publication Critical patent/JPS6249730B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6312—
    • H10P14/6322—
    • H10P30/206—
    • H10P30/208—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
JP5224178A 1977-05-11 1978-04-28 Iiiiv compound semiconductor structure and method of producing same Granted JPS53139979A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/796,118 US4170666A (en) 1977-05-11 1977-05-11 Method for reducing surface recombination velocities in III-V compound semiconductors

Publications (2)

Publication Number Publication Date
JPS53139979A true JPS53139979A (en) 1978-12-06
JPS6249730B2 JPS6249730B2 (enExample) 1987-10-21

Family

ID=25167346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5224178A Granted JPS53139979A (en) 1977-05-11 1978-04-28 Iiiiv compound semiconductor structure and method of producing same

Country Status (2)

Country Link
US (1) US4170666A (enExample)
JP (1) JPS53139979A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
IT1171402B (it) * 1981-07-20 1987-06-10 Selenia Ind Eletroniche Associ Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata
US5192695A (en) * 1991-07-09 1993-03-09 Fermionics Corporation Method of making an infrared detector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLID STOTE COMMUNICATIONS=1971 *

Also Published As

Publication number Publication date
US4170666A (en) 1979-10-09
JPS6249730B2 (enExample) 1987-10-21

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