JPS6248910B2 - - Google Patents

Info

Publication number

JPS6248910B2

JPS6248910B2 JP3340678A JP3340678A JPS6248910B2 JP S6248910 B2 JPS6248910 B2 JP S6248910B2 JP 3340678 A JP3340678 A JP 3340678A JP 3340678 A JP3340678 A JP 3340678A JP S6248910 B2 JPS6248910 B2 JP S6248910B2

Authority

JP

Japan

Prior art keywords

gate

region

static induction

split

semiconductor device

Prior art date

1978-03-22

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
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• 230000006698 induction Effects 0.000 claims description 25
• 239000004065 semiconductor Substances 0.000 claims description 23
• 230000003068 static effect Effects 0.000 claims description 23
• 239000012212 insulator Substances 0.000 claims description 12
• 239000000758 substrate Substances 0.000 claims description 11
• 239000000463 material Substances 0.000 claims description 2
• 238000009825 accumulation Methods 0.000 description 7
• 230000000694 effects Effects 0.000 description 7
• 239000000969 carrier Substances 0.000 description 6
• 238000006243 chemical reaction Methods 0.000 description 5
• 238000002955 isolation Methods 0.000 description 5
• 238000000034 method Methods 0.000 description 4
• 230000008569 process Effects 0.000 description 4
• 238000009792 diffusion process Methods 0.000 description 3
• 238000002347 injection Methods 0.000 description 3
• 239000007924 injection Substances 0.000 description 3
• 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
• 230000010354 integration Effects 0.000 description 2
• 238000005036 potential barrier Methods 0.000 description 2
• 239000004642 Polyimide Substances 0.000 description 1
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• 238000002048 anodisation reaction Methods 0.000 description 1
• 230000000903 blocking effect Effects 0.000 description 1
• 238000004364 calculation method Methods 0.000 description 1
• 230000008859 change Effects 0.000 description 1
• 239000013078 crystal Substances 0.000 description 1
• 230000007423 decrease Effects 0.000 description 1
• 238000000151 deposition Methods 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
• 238000005530 etching Methods 0.000 description 1
• 239000011810 insulating material Substances 0.000 description 1
• 230000001590 oxidative effect Effects 0.000 description 1
• 229920001721 polyimide Polymers 0.000 description 1
• 229910021426 porous silicon Inorganic materials 0.000 description 1
• 230000001737 promoting effect Effects 0.000 description 1
• 230000009467 reduction Effects 0.000 description 1
• 239000011347 resin Substances 0.000 description 1
• 229920005989 resin Polymers 0.000 description 1
• 238000000926 separation method Methods 0.000 description 1
• 238000004544 sputter deposition Methods 0.000 description 1
• 238000007740 vapor deposition Methods 0.000 description 1