JPS6248217B2 - - Google Patents
Info
- Publication number
- JPS6248217B2 JPS6248217B2 JP58024794A JP2479483A JPS6248217B2 JP S6248217 B2 JPS6248217 B2 JP S6248217B2 JP 58024794 A JP58024794 A JP 58024794A JP 2479483 A JP2479483 A JP 2479483A JP S6248217 B2 JPS6248217 B2 JP S6248217B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- amorphous
- thickness
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 9
- 239000011669 selenium Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000005299 abrasion Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- -1 etc. are used Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2479483A JPS58154850A (ja) | 1983-02-18 | 1983-02-18 | 記録用部品 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2479483A JPS58154850A (ja) | 1983-02-18 | 1983-02-18 | 記録用部品 |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3293786A Division JPS61221755A (ja) | 1986-02-19 | 1986-02-19 | 非晶質Ｓｉ−Ｇｅ系層を有する記録用部品 |
| JP3293886A Division JPS61228457A (ja) | 1986-02-19 | 1986-02-19 | 非晶質Ｓｉ−Ｃ系層を有する記録用部品 |
| JP3293986A Division JPS61228455A (ja) | 1986-02-19 | 1986-02-19 | Ｓｉ−Ｃ系層とＳｉ−Ｇｅ系層を有する記録用部品 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58154850A JPS58154850A (ja) | 1983-09-14 |
| JPS6248217B2 true JPS6248217B2 (sl) | 1987-10-13 |
Family
ID=12148091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2479483A Granted JPS58154850A (ja) | 1983-02-18 | 1983-02-18 | 記録用部品 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58154850A (sl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161618U (sl) * | 1988-05-06 | 1989-11-09 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH067270B2 (ja) * | 1983-12-16 | 1994-01-26 | 株式会社日立製作所 | 電子写真用感光体 |
| JPS6126054A (ja) * | 1984-07-16 | 1986-02-05 | Minolta Camera Co Ltd | 電子写真感光体 |
| JPS6126055A (ja) * | 1984-07-16 | 1986-02-05 | Minolta Camera Co Ltd | 電子写真感光体 |
| JPS6129847A (ja) * | 1984-07-20 | 1986-02-10 | Minolta Camera Co Ltd | 電子写真感光体 |
| US4738912A (en) * | 1985-09-13 | 1988-04-19 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an amorphous carbon transport layer |
| US4741982A (en) * | 1985-09-13 | 1988-05-03 | Minolta Camera Kabushiki Kaisha | Photosensitive member having undercoat layer of amorphous carbon |
| US4743522A (en) * | 1985-09-13 | 1988-05-10 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US4749636A (en) * | 1985-09-13 | 1988-06-07 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US5166018A (en) * | 1985-09-13 | 1992-11-24 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| JPS61221755A (ja) * | 1986-02-19 | 1986-10-02 | Hitachi Ltd | 非晶質Ｓｉ−Ｇｅ系層を有する記録用部品 |
| JPS61228455A (ja) * | 1986-02-19 | 1986-10-11 | Hitachi Ltd | Ｓｉ−Ｃ系層とＳｉ−Ｇｅ系層を有する記録用部品 |
| JPS62220012A (ja) * | 1986-03-20 | 1987-09-28 | Fujitsu Ltd | 圧電振動素子 |
| EP0261653A3 (en) * | 1986-09-26 | 1989-11-23 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer |
| EP0262570A3 (en) * | 1986-09-26 | 1989-11-23 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer |
| WO1996015550A1 (en) * | 1994-11-10 | 1996-05-23 | Lawrence Semiconductor Research Laboratory, Inc. | Silicon-germanium-carbon compositions and processes thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4126150A (en) * | 1977-03-28 | 1978-11-21 | Rca Corporation | Photovoltaic device having increased absorption efficiency |
-
1983
- 1983-02-18 JP JP2479483A patent/JPS58154850A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4126150A (en) * | 1977-03-28 | 1978-11-21 | Rca Corporation | Photovoltaic device having increased absorption efficiency |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161618U (sl) * | 1988-05-06 | 1989-11-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58154850A (ja) | 1983-09-14 |
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