JPS6248036A - Characteristic measuring jig of beam lead semiconductor wafer - Google Patents
Characteristic measuring jig of beam lead semiconductor waferInfo
- Publication number
- JPS6248036A JPS6248036A JP18884685A JP18884685A JPS6248036A JP S6248036 A JPS6248036 A JP S6248036A JP 18884685 A JP18884685 A JP 18884685A JP 18884685 A JP18884685 A JP 18884685A JP S6248036 A JPS6248036 A JP S6248036A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor wafer
- jig
- beam lead
- edge sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はビーム・リード型半導体ウェハーの特性測定時
にウェハーを貼り付ける石英板の治具に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a quartz plate jig to which a wafer is attached when measuring characteristics of a beam-lead type semiconductor wafer.
第4図に示すように従来の一般的なビーム・リード型半
導体ウェハーの特性測定用治具は厚さが均一な石英板か
らなる治具本体1にウニ/・−貼り付は用のワックス2
を介してビーム・リード型半導体ウェハー3が貼シ付け
られる。As shown in Fig. 4, the conventional general beam-lead semiconductor wafer characteristic measurement jig has a jig body 1 made of a quartz plate with a uniform thickness and a wax 2 for pasting.
A beam lead type semiconductor wafer 3 is pasted through the wafer.
上述した従来のビーム・リード型半導体ウェハーの特性
測定用治具により、自動測定機で特性測定を行う場合、
第5図、第6図に示すようにプローブカードに備えであ
るエラ・ソセンサー4によりウェハーの有無を検出しな
がらウェハー内のチップ1つ1つについて自動的に特性
測定を行うが、ビーム・リード型半導体ウェハーの場合
は、ウェハー貼り付は用のワックス及びウェハー厚の合
計が100〜150μ程度と薄いために通常のエツジセ
ンサー4では、エツジセンサーそのもののオーバードラ
イブ量が200〜300μで動作させることから、ウェ
ハーの貼り付けられていない領域でもウエノ・−が有る
ものとして検出してしまい、治具本体1の全域に亘り測
定を行うことに々す、測定時間に無駄が生じるという欠
点があった。When measuring the characteristics with an automatic measuring machine using the conventional beam lead type semiconductor wafer characteristic measurement jig mentioned above,
As shown in Figs. 5 and 6, the characteristics of each chip in the wafer are automatically measured while detecting the presence or absence of a wafer using the elastomer sensor 4 provided in the probe card. In the case of type semiconductor wafers, the sum of the wax used for wafer attachment and the wafer thickness is as thin as about 100 to 150 μm, so in the case of a normal edge sensor 4, the edge sensor itself must be operated with an overdrive amount of 200 to 300 μm. Therefore, it is detected that wafer is present even in an area where no wafer is attached, which has the disadvantage that measuring time is wasted when measuring the entire area of the jig body 1. .
本発明はウェハーの有無をエツジセンサーで容易に検出
できる治具を提供するものである。The present invention provides a jig that can easily detect the presence or absence of a wafer using an edge sensor.
本発明のビーム・リード型半導体ウェハーの特性測定用
治具はビーム・リード型ウェハーを貼シ付ける部分の治
具本体の厚みを周囲よりも部分的に厚くしたことを特徴
とするものである。The jig for measuring the characteristics of a beam-lead type semiconductor wafer according to the present invention is characterized in that the thickness of the jig body is partially thicker at the portion where the beam-lead type wafer is pasted than at the surrounding area.
次に本発明の一実施例について図面を参照して説明する
。第1図において、1は石英板からなる治具本体、2は
ワックス、3はビーム・IJ−ト型半導体ウェハー、4
はプローブカードのエツジセンサーである。第1図にお
いて、本発明は石英板からなる治具本体1のウェハーを
貼シ付ける部分1aを隆起させて周囲の厚さより厚くし
た構造にすることにより、ビーム・リード型半導体ウエ
ノ・−3のようにウェハー厚が100〜150μと薄く
研磨処理した場合でもウェハーの有無を検出するエツジ
センサー4の動作を確実にすることが可能としたもので
ある。Next, an embodiment of the present invention will be described with reference to the drawings. In FIG. 1, 1 is a jig body made of a quartz plate, 2 is wax, 3 is a beam/IJ-type semiconductor wafer, and 4 is a jig body made of a quartz plate.
is the edge sensor of the probe card. In FIG. 1, the present invention has a structure in which a portion 1a of a jig main body 1 made of a quartz plate to which a wafer is pasted is raised to make it thicker than the surrounding area, thereby creating a beam lead type semiconductor wafer-3. Even when the wafer is polished to a thickness of 100 to 150 microns, the edge sensor 4 for detecting the presence or absence of the wafer can operate reliably.
実施例において、第2,3図に示すようにウェハーの貼
り付は部分1aは周囲より板厚が厚くなっており、その
部分にウエノ・−3がセットされるから、ウェハーの貼
シ付は部分1a以外でエツジセンサー4がウェハー有り
と検出することはない。In the example, as shown in FIGS. 2 and 3, the thickness of the wafer is thicker in the part 1a than the surrounding area, and Ueno-3 is set in that part, so the wafer can be pasted. The edge sensor 4 does not detect the presence of a wafer in areas other than the portion 1a.
以上説明したように本発明はビーム・リード型半導体ウ
ェハーが貼り付けられる部分の治具本体の厚みを部分的
に厚くすることにより、ビーム・リード型半導体ウェハ
ーの様に100〜150μ程度に薄く研磨処理した場合
でも、プローブカーブカードに備えられているエツジセ
ンサーの動作が確実となるだめに、ウェハー有無の検出
が容易になり、自動測定機による特性測定が効率よくで
きる効果がある。As explained above, in the present invention, by partially increasing the thickness of the jig main body at the part where the beam-lead semiconductor wafer is attached, polishing the jig to a thinner thickness of about 100 to 150 μm is possible, just like the beam-lead semiconductor wafer. Even if the probe curve card is processed, the operation of the edge sensor provided in the probe curve card becomes reliable, which makes it easier to detect the presence or absence of a wafer, and makes it possible to efficiently measure characteristics using an automatic measuring machine.
第1図は本発明によるビーム・リード型半導体ウェハー
の特性測定用治具を示す断面図、第2図、は本発明によ
る治具にセットしたウエノ・−をエツジセンサーで検出
している状態を示す断面図、第3図はウェハーがセット
されていない治具上でエツジセンサーが正しくウエノh
−の有無を検出している状態を示す断面図、
第4図は従来のビーム・リード型半導体ウェハーの特性
測定用治具を示す断面図、第5図はエツジセンサーがウ
ェハーを検出していることを示す断面図、第6図はウェ
ハーの無い石英板上でもエツジセンサーがウェハーの有
無を正しく検出していないことを示す断面図である。
1・・・石英板からなる治具本体、2・・・ウェハー貼
り付は用ワックス、3・・・ビーム・リード型半導体ウ
ェハー、4・・・エツジセンサー。Fig. 1 is a sectional view showing a jig for measuring characteristics of a beam-lead type semiconductor wafer according to the present invention, and Fig. 2 shows a state in which an edge sensor detects a wafer set in the jig according to the present invention. The cross-sectional view shown in Figure 3 shows the edge sensor correctly detecting the wafer h on the jig where no wafer is set.
Figure 4 is a cross-sectional view showing a conventional beam lead type semiconductor wafer characteristic measurement jig, Figure 5 is an edge sensor detecting the wafer. FIG. 6 is a cross-sectional view showing that the edge sensor does not correctly detect the presence or absence of a wafer even on a quartz plate without a wafer. 1... Jig main body made of quartz plate, 2... Wax for wafer attachment, 3... Beam lead type semiconductor wafer, 4... Edge sensor.
Claims (1)
使用する治具において、ビーム・リード型半導体ウェハ
ーを貼り付ける部分の治具本体の厚みを周囲より厚くし
たことを特徴とするビーム・リード型半導体ウェハーの
特性測定用治具。(1) A jig used to measure the characteristics of a beam-lead semiconductor wafer, characterized in that the thickness of the jig body at the part where the beam-lead semiconductor wafer is pasted is thicker than the surrounding area. A jig for measuring wafer characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18884685A JPS6248036A (en) | 1985-08-28 | 1985-08-28 | Characteristic measuring jig of beam lead semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18884685A JPS6248036A (en) | 1985-08-28 | 1985-08-28 | Characteristic measuring jig of beam lead semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6248036A true JPS6248036A (en) | 1987-03-02 |
Family
ID=16230864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18884685A Pending JPS6248036A (en) | 1985-08-28 | 1985-08-28 | Characteristic measuring jig of beam lead semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6248036A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11215639B2 (en) * | 2017-11-16 | 2022-01-04 | Mitsubishi Electric Corporation | Probe card, semiconductor measuring device, and semiconductor measuring system |
-
1985
- 1985-08-28 JP JP18884685A patent/JPS6248036A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11215639B2 (en) * | 2017-11-16 | 2022-01-04 | Mitsubishi Electric Corporation | Probe card, semiconductor measuring device, and semiconductor measuring system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5828116A (en) | Semiconductor device with bonded wires | |
JPS6248036A (en) | Characteristic measuring jig of beam lead semiconductor wafer | |
JP3690056B2 (en) | Manufacturing method of sensor chip of semiconductor pressure sensor | |
JPS61230382A (en) | Semiconductor pressure sensor | |
JP2559129B2 (en) | Probe card | |
JP2733136B2 (en) | Semiconductor pressure sensor | |
JPH03151651A (en) | Semiconductor device | |
JPH10267774A (en) | Wafer of semiconductor pressure sensor | |
JPS6126156U (en) | Bonding strength measuring device | |
JPH03156944A (en) | Semiconductor device | |
JPH0225050A (en) | Method for determining semiconductor pressure sensor characteristics | |
JPH0344530A (en) | Complex sensor | |
JPS62252176A (en) | Semiconductor pressure sensor | |
JPS5821380A (en) | Manufacture of semiconductor pressure transducer | |
JPH073874B2 (en) | Semiconductor device | |
JPS6231148A (en) | Semiconductor device | |
JPH04323566A (en) | Semiconductor acceleration sensor | |
JPH0413868B2 (en) | ||
JPH062266Y2 (en) | Edge sensor | |
JPS63281034A (en) | Semiconductor pressure sensor | |
JPS61111583A (en) | Manufacture of semiconductor pressure detector | |
JPS63132434U (en) | ||
JPH04278462A (en) | Semiconductor acceleration sensor | |
JPS60127766A (en) | Semiconductor pressure sensor | |
JP2001041999A (en) | Method for detecting internal resistance of semiconductor chip |