JPS6246057B2 - - Google Patents
Info
- Publication number
- JPS6246057B2 JPS6246057B2 JP9289982A JP9289982A JPS6246057B2 JP S6246057 B2 JPS6246057 B2 JP S6246057B2 JP 9289982 A JP9289982 A JP 9289982A JP 9289982 A JP9289982 A JP 9289982A JP S6246057 B2 JPS6246057 B2 JP S6246057B2
- Authority
- JP
- Japan
- Prior art keywords
- mark
- electron beam
- electron
- signal
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 29
- 238000010894 electron beam technology Methods 0.000 claims description 19
- 238000000691 measurement method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9289982A JPS58210615A (ja) | 1982-05-31 | 1982-05-31 | 電子ビ−ムを用いたマ−ク位置測定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9289982A JPS58210615A (ja) | 1982-05-31 | 1982-05-31 | 電子ビ−ムを用いたマ−ク位置測定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58210615A JPS58210615A (ja) | 1983-12-07 |
| JPS6246057B2 true JPS6246057B2 (enrdf_load_stackoverflow) | 1987-09-30 |
Family
ID=14067308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9289982A Granted JPS58210615A (ja) | 1982-05-31 | 1982-05-31 | 電子ビ−ムを用いたマ−ク位置測定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58210615A (enrdf_load_stackoverflow) |
-
1982
- 1982-05-31 JP JP9289982A patent/JPS58210615A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58210615A (ja) | 1983-12-07 |
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