JPS6245543A - Production of lower unsaturated hydrocarbon - Google Patents

Production of lower unsaturated hydrocarbon

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Publication number
JPS6245543A
JPS6245543A JP18479085A JP18479085A JPS6245543A JP S6245543 A JPS6245543 A JP S6245543A JP 18479085 A JP18479085 A JP 18479085A JP 18479085 A JP18479085 A JP 18479085A JP S6245543 A JPS6245543 A JP S6245543A
Authority
JP
Japan
Prior art keywords
adsorbent bed
impurities
treatment
adsorption
adsorbed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18479085A
Other languages
Japanese (ja)
Other versions
JPH0618795B2 (en
Inventor
Genji Saito
斎藤 絃次
Kazuro Konno
今野 和朗
Satoru Morishita
悟 森下
Tetsuharu Hirasaki
平崎 徹治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
TOHO ASECHIREN KK
Original Assignee
TOHO ASECHIREN KK
Toyo Soda Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOHO ASECHIREN KK, Toyo Soda Manufacturing Co Ltd filed Critical TOHO ASECHIREN KK
Priority to JP18479085A priority Critical patent/JPH0618795B2/en
Publication of JPS6245543A publication Critical patent/JPS6245543A/en
Publication of JPH0618795B2 publication Critical patent/JPH0618795B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To produce a lower unsaturated hydrocarbon, by passing a lower unsaturated hydrocarbon containing impurities through a pretreating adsorbent bed and then a normal treating adsorbent bed to remove the residual impurities and adsorbed impurities and desorbing the lower unsaturated hydrocarbon. CONSTITUTION:A lower unsaturated hydrocarbon (unsaturated HC) containing impurities is passed through a pretreating adsorbent bed to remove the impurities having higher adsorbability than the unsaturated HC. The unadsorbed component is then passed through a normal TREATING adsorbent bed, e.g. zeolite 4A or 5A, to adsorb the unsaturated HC thereon. The impurities left in the space part of the normal adsorbent bed are removed by passing preferably a gas flowing out of the normal adsorbent bed in the next treatment of removing the adsorbed impurities therethrough and the adsorbed impurities are removed by circulating a gas present in the adsorbent bed. The normal treating adsorbent bed is heated to desorb the aimed substance or the second high-purity component is passed through the normal treating adsorbent bed to afford a mixed gas.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、低級不飽和炭化水素、すなわち炭素数2〜4
の不飽和炭化水素またはこれを含む高純度ガスの製造法
に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to lower unsaturated hydrocarbons, that is, carbon atoms of 2 to 4.
This invention relates to a method for producing unsaturated hydrocarbons or high-purity gases containing them.

し従来の技術] 高純度の低級不飽和炭化水素は、精留や溶媒による吸収
法によって製造されていた。
Prior Art] High purity lower unsaturated hydrocarbons have been produced by rectification or absorption using a solvent.

し発明が解決しようとする問題点コ 本発明は、比較的操作の容易な吸着法によって、i!′
li純度の低級不飽和炭化水素または低級不飽和炭化水
素とこれよりも吸着活性の低い種類のガスとの高純度混
合ガスを製造することができる方法を提供づ−るムので
ある。
Problems to be Solved by the Invention The present invention uses an adsorption method that is relatively easy to operate. ′
The object of the present invention is to provide a method capable of producing a high purity mixed gas of a lower unsaturated hydrocarbon of li purity or a lower unsaturated hydrocarbon and a type of gas having a lower adsorption activity.

[問題点を解決するための手段コ 本発明は、 a、 不純物を含む低級不飽和炭化水素を前処理吸着剤
床に通して、低級不飽和炭化水素よりも吸着活性の高い
不純物を吸るさせて除去しく前処理)、 b、 前処理における非吸着成分を本処理吸着剤床に通
して、低級不飽和炭化水素を吸着させ(不飽和HC吸着
処理)、 C9ついで、本処理吸着剤床の空間部に残留している不
純物を除去しく残留不純物除去処理)、 d、ついで、本処理吸着剤床に吸着している不純物を除
去しく吸着不純物除去処理)、e、 さらに、本処理吸
着剤床から低級不飽和炭化水素を脱着させろく不飽和H
C脱着処理) ことからなる、低級不飽和炭化水素の製造法または 上記e、の不飽和HC脱着処理において低級不飽和炭化
水素の脱着を本処理吸ネを側床に低級不飽和炭化水素よ
りも吸着活性の低い種類のガス(J:y、下、「第2成
分」という)を通ずことによって行なうことによる低級
不飽和炭化水素とこれよりも吸着活性の低い種類のガス
との高純度混合ガスの”lJi告ン入を要旨とづる。こ
れによって、低級不飽和炭化水素またはこれと第2成分
とからなる高純度ガスがえられる。
[Means for Solving the Problems] The present invention provides the following steps: a. Pass lower unsaturated hydrocarbons containing impurities through a pre-treatment adsorbent bed to adsorb impurities that have higher adsorption activity than lower unsaturated hydrocarbons. b. Pass the unadsorbed components in the pretreatment through the main treatment adsorbent bed to adsorb lower unsaturated hydrocarbons (unsaturated HC adsorption treatment), Residual impurity removal treatment to remove impurities remaining in the space), d. Next, adsorption impurity removal treatment to remove impurities adsorbed on the main treatment adsorbent bed), e. Further, the main treatment adsorption bed Desorbs lower unsaturated hydrocarbons from unsaturated H
In the method for producing lower unsaturated hydrocarbons consisting of (C desorption treatment) or in the unsaturated HC desorption treatment described in e. High-purity mixing of lower unsaturated hydrocarbons with a type of gas with lower adsorption activity by passing a type of gas with lower adsorption activity (J: y, below, referred to as "second component") The gist of the process is to introduce the gas into the gas. By doing so, a high purity gas consisting of lower unsaturated hydrocarbons or this and a second component can be obtained.

低級不飽和炭化水素としてはたとえば、エヂレン、アセ
ヂレン、プロピレン、ブチレン類等をあげることができ
、また低級不飽和炭化水素と混合して用いられる有用な
第2成分として水素、ヘリウム、アルゴン等があるが、
本発明は、いずれにも適用することができる。
Examples of lower unsaturated hydrocarbons include ethylene, acetylene, propylene, butylene, etc., and useful second components used in combination with lower unsaturated hydrocarbons include hydrogen, helium, argon, etc. but,
The present invention can be applied to either.

以下、各工程を詳細に説明する。Each step will be explained in detail below.

〈前処理〉 水分、二酸化炭素、アセトン、ジメヂルホルムアミド等
は、通常、低級不飽和炭化水素よりも吸着活性が高いの
で、前処理で除去される。
<Pretreatment> Moisture, carbon dioxide, acetone, dimethylformamide, etc. usually have higher adsorption activity than lower unsaturated hydrocarbons, so they are removed by pretreatment.

ここで使用される吸着剤としては、たとえば、ゼオライ
ト3A、ゼオライト4△、活性炭等が適している。これ
らを使用する場合は、0〜20℃、絶対圧1・〜3KF
I/cmでこの処理を行なえばよい。前処理吸着剤床は
、図面(符号1J3J、び2)に示すように、直列に連
結した二つの吸着剤床からなるものを使用して吸も効率
を高くりることができる。この場合、原料ガスの流れに
ついて上流側の吸着剤床に活性炭を使用して主として有
機不純物を、かつ、下流側の吸着剤床にゼオライト3△
またはぜオライド4△を使用して主として水分を吸着さ
せるのがよい。
As the adsorbent used here, for example, zeolite 3A, zeolite 4Δ, activated carbon, etc. are suitable. When using these, the temperature should be 0 to 20℃ and the absolute pressure should be 1 to 3KF.
This process may be performed at I/cm. The pretreatment adsorbent bed can be made up of two adsorbent beds connected in series, as shown in the drawings (1J3J and 2), to increase the absorption efficiency. In this case, activated carbon is used in the adsorbent bed on the upstream side of the feed gas flow to mainly remove organic impurities, and zeolite 3△ is used in the downstream adsorbent bed.
Alternatively, it is preferable to use Zeolide 4△ to mainly adsorb water.

く不飽和HC吸↑1処理〉 前処理の次に+)ff処理吸着剤床を出たガスは、本処
理吸着剤床に通して低級不飽和炭化水素を吸指させ、そ
の非吸着成分である不純物を該吸着剤床から流出さける
。この不純物は、たとえ(、[、酸木、窒素、−酸化炭
素等であり、その一部は該吸着剤床に弱く吸着されて残
る。この処理の温度が低いほど、また圧力が高いほど吸
着容量が高くなるが、この不純物の吸着量も大きくなる
ので、この処理に適した吸着剤であるゼオライト4A、
ゼオライト5△等を使用する場合は、0〜70℃このま
しくは20〜60℃、絶kjIモ0、131〜3Kg/
 ciこのましくは0.8〜2に9 / ctiで行な
うのがよい。
↑1 treatment> Next to the pretreatment, the gas exiting the +)ff treatment adsorbent bed is passed through the main treatment adsorption bed to adsorb lower unsaturated hydrocarbons, and its non-adsorbed components are Certain impurities are prevented from escaping from the adsorbent bed. These impurities, even (, [, acid wood, nitrogen, carbon oxide, etc.), some of which remain weakly adsorbed on the adsorbent bed.The lower the temperature and the higher the pressure of this process, the more adsorbed Zeolite 4A, which is a suitable adsorbent for this treatment, has a high capacity but also a large amount of adsorbed impurities.
When using zeolite 5△ etc., the temperature is 0 to 70℃, preferably 20 to 60℃, and the temperature is 0 to 131 to 3Kg/
ci is preferably 0.8 to 2 to 9/cti.

く残留不純物除去処理〉 不飽和HC吸着5処理完了時には、本処理吸4剤床の空
間部に不純物が残留しているだけでなく、上記のとd3
り通常不純物の一部が吸着剤に弱く吸着している。
Removal of residual impurities〉 When the unsaturated HC adsorption 5 treatment is completed, not only impurities remain in the space of the main treatment absorbent bed, but also the above d3
Usually some of the impurities are weakly adsorbed on the adsorbent.

まず上記本処1![!吸着剤床の空間部に残留している
不純物を除去する。この際、吸着されている不純物の一
部も必然的にIBM着されて除去される。この処理は、
具体的には、ある程度高い純度の低級不飽和炭化水素、
第2成分またはこれらの混合物を本処理吸着剤床に通し
て不純物と置換さけることによって行なう。この置換用
ガスどしてtよ、つぎの吸着不純物除去処理で本処理吸
着剤床を流出するガスをホルダーに貯えておぎ、これを
利用ブるのが収率を上げるうえでもっと5右利であり、
それを吸着剤床空間び在ガスの5〜20容吊倍通ぜばよ
い。この処理(よ、低級不飽和炭化水素が脱着しないよ
う比較的低温で、また残留ガスの置換・洗浄効率の点か
ら不飽和HC吸着処理の操作圧力以下で行なうべさて・
ある。吸る剤としてビオライト4ΔまたはピJライト5
△を使用する場合は、20℃未満、どくに10℃以下が
よく、操作圧力は絶対圧3Kfl/C屑以下がよい。
First of all, the above book 1! [! Remove impurities remaining in the voids of the adsorbent bed. At this time, a portion of the adsorbed impurities is also inevitably attached to the IBM and removed. This process is
Specifically, lower unsaturated hydrocarbons with a certain degree of purity,
This is accomplished by passing the second component or a mixture thereof through the treated adsorbent bed to displace impurities. In order to increase the yield, storing the gas that flows out of the main treatment adsorbent bed in the next adsorbed impurity removal process in a holder and using it is a great way to increase the yield. and
It is sufficient to pass 5 to 20 volumes of the gas present in the adsorbent bed space. This treatment should be carried out at a relatively low temperature so as not to desorb lower unsaturated hydrocarbons, and at a pressure lower than the operating pressure of the unsaturated HC adsorption treatment in order to replace and clean the residual gas.
be. Biolite 4Δ or PiJlite 5 as a suction agent
When using Δ, the temperature is preferably lower than 20°C, preferably 10°C or lower, and the operating pressure is preferably 3Kfl/C or lower absolute pressure.

く吸盾不Ill!1勿除去処理〉 つぎに、本処理吸6剤床の吸着剤に吸着している不純物
を除去づる。この処理は、吸着不純物を完全に脱着し、
かつ低級不飽和炭化水素を脱71シにくい条件で行なわ
ねばならない。しかし、不純物を完全に脱着−させるに
は、低級不飽和炭化水素の脱着は避けられない。通譜、
つざの不飽和HC脱着処理でえられる製品中の低級不飽
和炭化水素の10〜95%このましくは10〜50%を
脱着さじることによって不純物が完全に脱着きれる。吸
着剤床の加熱を、ガスを吸着剤床に通すことによって行
なう場合は、このガスは高純度でな1ブればならない。
I'll stop fighting! 1. Removal treatment> Next, impurities adsorbed on the adsorbent of the six-layer absorbent bed for this treatment are removed. This treatment completely desorbs adsorbed impurities and
In addition, the process must be carried out under conditions that make it difficult to remove lower unsaturated hydrocarbons. However, in order to completely desorb impurities, desorption of lower unsaturated hydrocarbons is unavoidable. Passage,
Impurities can be completely desorbed by desorbing 10 to 95%, preferably 10 to 50%, of the lower unsaturated hydrocarbons in the product obtained by the unsaturated HC desorption treatment. If the heating of the adsorbent bed is carried out by passing a gas through the adsorbent bed, this gas must be of high purity.

つざの不飽和HC説省処理でえられる製品かまたは高純
瓜の第2成分を使用してもよいが、吸着剤床空間ガスを
循環させるのが実際的である。bつとも、低級不飽和炭
化水素のみからなるガスの装造を目的とする場合は、第
2成分を利用することはできない。
Although the product obtained from the unsaturated HC process or the second component of high purity melon may be used, it is practical to circulate the adsorbent bed space gas. However, if the purpose is to prepare a gas consisting only of lower unsaturated hydrocarbons, the second component cannot be used.

吸着剤としてげAライト4Aまたはげオライド5Aを使
用する場合は、最終的な処理温度を20〜50℃このま
しくは30〜40℃にし、圧力は、残留不純物除去処理
の操作圧よりも高くして、ここでえられるガスを次のサ
イクルで残留不純物除去処理に供するのを容易ににする
のがよい。
When using GeA-lite 4A or Geolide 5A as an adsorbent, the final treatment temperature is 20 to 50 °C, preferably 30 to 40 °C, and the pressure is higher than the operating pressure for residual impurity removal treatment. It is preferable to do this so that the gas obtained here can be easily subjected to residual impurity removal treatment in the next cycle.

〈不飽和HC112着処理〉 不純物除去処理ののち、本処理吸着剤床を加熱して低級
不飽和炭化水素を脱着させる。低級不飽和炭化水素のみ
からなるガスを製造する場合は、伝熱管によっておよσ
/または製品低級不飽和炭化水素を本処1!I!吸名剤
床に通りことによって加熱する。第2成分との混合ガス
を装31.)。
<Unsaturated HC112 deposition treatment> After the impurity removal treatment, the main treatment adsorbent bed is heated to desorb lower unsaturated hydrocarbons. When producing gas consisting only of lower unsaturated hydrocarbons, heat exchanger tubes are used to
/or product lower unsaturated hydrocarbons this place 1! I! It is heated by passing it through a bed of absorbents. 31. Insert a mixed gas with the second component. ).

する場合は、高純度の第2成分を本処理吸着剤床に通り
−ことによって加熱しな1プれぽならない。
If so, the high purity second component must be heated by passing it through the treated adsorbent bed.

この場合処理温度が高い(まどよく雁首されるが、次の
吸容処理のために吸る刑法を冷却プるのに長時間を要す
ることどなる。ゼオライl−4Aまたはゼオライ1〜5
Aを使用する場合は、この温度は40〜90℃このまし
くは60〜80℃とづるのがよい。
In this case, the processing temperature is high (although it is easily removed, it takes a long time to cool down the inhaled material for the next suction treatment. Zeolite 1-4A or Zeolite 1-5
When A is used, this temperature is preferably 40-90°C, preferably 60-80°C.

以上の本処理吸着剤床における処理温度は、それに流入
するガスの温度を調整すると同0)に、吸る刑法の外部
または内部に伝熱管を設け、間接的に加熱また(ま玲1
aをすることによって容易に調整することができるが、
以上説明したとJ5す、製品ガスの種類や製造設備の現
(値で−の他の条件によっては、そのいずれかの手段の
みにJ二つて行なうこともできる。
The treatment temperature in the above-mentioned main treatment adsorbent bed can be adjusted by adjusting the temperature of the gas flowing into it.A heat transfer tube is installed outside or inside the penal code to indirectly heat or
Although it can be easily adjusted by doing a,
As explained above, depending on the type of product gas and other conditions of the production equipment, it is also possible to perform the process using only one of these methods.

「実施例] 本発明の実施例を、図を使用して説明する。"Example] Embodiments of the present invention will be described using figures.

実施例1 ジメヂルホルムアミド 71 ppm、水分 41 p
pm、二酸化炭素 400 ppm 、 窒素 230
0 pOm I;J、びMん 100ρpmを不純物と
して含むアセチレンを、弁4を経て、北越炭水V業將j
装拉状話性炭Y−682gを充填した前処理吸着剤床1
に2u /m1rl(f)流(Dで通して20℃、絶対
圧 131N/ clfの条件で処理し、それから流出
づるガスを東)1四jt E二業付ル装ゼAライ+−4
A vs−ンノ、A−,1151gを充填した前処理吸
着剤床2に通して20’C,絶対JIE L31 K9
/ Cfjの条イ′1【・処理し、イれから流出づ−る
ガスを弁5を経て東汀凸達])”つ(株製ぜオライド5
A ゼオラム八−5151Qをヂ1〕唄した本処理吸着
剤床3に通して20°C,絶対i「1.3189/cm
で処理した。10m1n 3本処理吸る刑法3がアセチ
レンで飽和したので・(流出ガスを分析して確ルΣした
)、弁4 J>よび5を閉じた。
Example 1 Dimedylformamide 71 ppm, water 41 p
pm, carbon dioxide 400 ppm, nitrogen 230
Acetylene containing 0 pOm I; J, BiM as an impurity is passed through valve 4 to Hokuetsu Tansu V Industry
Pre-treated adsorbent bed 1 filled with 682g of loaded talking coal Y-
2u/m1rl (f) flow (passed through D and processed under conditions of 20°C and absolute pressure 131N/clf, then the gas flowing out to the east)
A vs. A-, 20'C through pre-treated adsorbent bed 2 packed with 1151g, absolute JIE L31 K9
/ Cfj's line A'1 [・The gas flowing out from the line passes through valve 5 and reaches Higashidae])' (Zeolide 5 manufactured by Co., Ltd.)
A Zeorum 8-5151Q was passed through the main treatment adsorbent bed 3 containing 20°C and an absolute i of 1.3189/cm.
Processed with. Since the 10mln 3-tube process was saturated with acetylene (confirmed by analyzing the outflow gas), valves 4 and 5 were closed.

次に、真空ポンプ7で本処理吸着剤床J3の内圧を絶対
圧0.13 K9 / ciまで減圧し、本処理吸着剤
床3を冷7J′Iコイル≦)で冷1(I L、ホルダー
6に貯えられている不純物濃匹 5 ppm 、絶対)
−「0、46 K9.7 ajの7ヒチレンを、冷f、
fl器8で一10℃に冷1J1シ、真空ポンプ7から排
出させ<−rがら本処理吸着剤床3の圧力を絶対圧 0
13匈/′cmに維持して本処理吸着剤床3にその空間
存在ガスの20容最倍(0,4Nu )通した。本処理
吸着剤床3の最終渦電は、6℃であった。
Next, the internal pressure of the main treatment adsorbent bed J3 is reduced to an absolute pressure of 0.13 K9/ci using the vacuum pump 7, and the main treatment adsorption bed 3 is transferred to the cold 1 (I L, holder Concentrated impurities stored in 6 5 ppm, absolute)
- "0, 46 K9.7 aj 7-hytylene, cold f,
Cool the adsorbent bed 3 to -10°C with a flask 8 and discharge it from the vacuum pump 7 while reducing the pressure of the adsorbent bed 3 to absolute pressure 0.
A flow rate of 20 volumes (0.4 Nu) of the gas present in the space was passed through the treated adsorbent bed 3 while maintaining the flow rate at 13 tons/'cm. The final eddy current of the treated adsorbent bed 3 was 6°C.

次に、本処理吸る刑法3をヒーター10で35゛Cまで
加熱し、吸着剤床内空間存在アヒヂレンを導管14.ブ
ロアー12およびじ一ター13経由で本処理吸着剤床3
に循環し、えられtこ鼠終絶対圧0.46 K!?/ 
on、35℃のガスをホルダー6に回収した。このガス
の不純物;:力庶は5 ppmであった。
Next, the inhaled criminal law 3 for this treatment is heated to 35°C with the heater 10, and the ahydylene present in the space in the adsorbent bed is transferred to the conduit 14. Main treatment adsorbent bed 3 via blower 12 and regulator 13
The final absolute pressure is 0.46 K! ? /
on, gas at 35°C was collected into holder 6. The impurity level of this gas was 5 ppm.

次にホルダー15に貯えられている不9む物濃度0.5
ppm以下のアレヂレンをヒーター11で80°Cに加
熱して本処理吸着剤床3に通し、同口、)にヒーター1
0で該吸る刑法の)1.4麿を80°Cに紺持し、0.
51)l)III以下のアセチレンを、?8対圧1KF
I / ci、25°Cm &”)で1.09j!えた
Next, the concentration of non-containing substances stored in the holder 15 is 0.5.
Aledylene of less than ppm is heated to 80°C with heater 11 and passed through main treatment adsorbent bed 3, and heater 1
1.4 hours of smoking at 80°C (according to the Penal Code) and 0.0 degrees Celsius.
51) l) Acetylene below III? 8 counter pressure 1KF
I/ci, 25°Cm &”) gave 1.09j!.

実施例2 下記条件を除いで、実1+%例1ど同じ条1′Fで処理
して水素−7しヂレン混合ガスをえた。
Example 2 A hydrogen-7-dylene mixed gas was obtained by treating the same 1+% Example 1 and 1'F except for the following conditions.

前処理操作圧 操作圧       絶対圧’ 、8に9 /’ cl
ri不飽和IC吸谷処理 操作圧       絶対圧1.8に!1./藷残留不
純物除去処理 ホルダー6のガス  不純物   41+pmアセチレ
ン 30vo 1% 水素    70vo1% 操作記]立       0°C 操作圧       絶対1〒 1パ3・cni流通ガ
ス:Uj      本処理吸着剤床間存在ガスの7容
11f’H+R 最終本処理吸着剤司法jσ 9°C 吸着不純物除去処理 供給ガス中の不純物 lppm以下(吸?1凸1ト11
、空間部のガスを循I莫−(J るかわりに水、(:を751給 した) 操作温度      25°C 1υ終圧       絶苅圧1.8Kg/cd流出ガ
ス温度    25℃ 最終ガス中の不純物 4ρpHl 不飽和[−]C叫♀1処叩 供給ガス      不純物 lppm以下。
Pretreatment operating pressure Operating pressure Absolute pressure, 8 to 9/' cl
ri unsaturated IC suction treatment operating pressure absolute pressure 1.8! 1. /Gas in holder 6 for residual impurity removal treatment Impurities 41+pm acetylene 30vo 1% hydrogen 70vo 1% Operating instructions] Standing 0°C Operating pressure Absolute 1〒 1pa3・cni Flowing gas: Uj 7 of the gas present between the beds of the adsorbent for this treatment Volume 11f'H+R Final main treatment adsorbent justice jσ 9°C Adsorption impurity removal treatment Impurities in the supplied gas 1 ppm or less (suction? 1 convex 1 to 11
, circulating the gas in the space Imo-(J Instead of water, (751 was supplied) Operating temperature 25°C 1υ Final pressure Absolute pressure 1.8 Kg/cd Outflow gas temperature 25°C Impurities in the final gas 4ρpHl Unsaturated [-]C ♀ 1-stroke supply gas Impurities 1 ppm or less.

A 操作温度      70℃ 操作圧       絶対圧5KI/cM製品ガス  
    不純物   lppmアセチレン 20vo 
1% 水素    govo1% 絶対圧5 Kg/ cni、O℃換17T  1.25
11比較例1 吸着不純物除去処理を行なわず、その他は実施例1と同
じ条件で実施した。
A Operating temperature 70℃ Operating pressure Absolute pressure 5KI/cM Product gas
Impurity lppm acetylene 20vo
1% Hydrogen govo1% Absolute pressure 5 Kg/cni, O℃ conversion 17T 1.25
11 Comparative Example 1 This was carried out under the same conditions as in Example 1 except that no adsorption impurity removal treatment was performed.

不純物濃度 2ppmのアセチレンが絶対圧IK9/ 
ci、25℃換算r1.62j!えられ7C6
Acetylene with an impurity concentration of 2 ppm has an absolute pressure of IK9/
ci, 25℃ conversion r1.62j! Erare7C6

【図面の簡単な説明】[Brief explanation of drawings]

図−1は、本発明の実施例の工程図を示15゜図中の符
号 1.2.3       :吸る刑法 4.5:か 6.15        :ホルダー 8.9        :クーラー 10.11,13,17:ヒーター 特許出願人 東洋Y1勺達工業株式会社特許出願人 東
邦アセヂレン株式会社 ′\
Figure 1 shows a process diagram of an embodiment of the present invention. Reference numbers in the 15° diagram: 1.2.3: Sucking Penal Code 4.5: or 6.15: Holder 8.9: Cooler 10.11, 13 , 17: Heater patent applicant: Toyo Y1 Kodatsu Kogyo Co., Ltd. Patent applicant: Toho Acedilene Co., Ltd.'\

Claims (4)

【特許請求の範囲】[Claims] (1)a、不純物を含む低級不飽和炭化水素を前処理吸
着剤床に通して、低級不飽和炭化水素よりも吸着活性の
高い不純物を吸着させて除去し(前処理)、 b、前処理における非吸着成分を本処理吸着剤床に通し
て、低級不飽和炭化水素を吸着させ(不飽和HC吸着処
理)、 c、ついで、本処理吸着剤床の空間部に残留している不
純物を除去し(残留不純物除去処理)、 d、ついで、本処理吸着剤床に吸着している不純物を除
去し(吸着不純物除去処理)、 e、さらに、本処理吸着剤床から低級不飽和炭化水素を
脱着させる(不飽和HC脱着処理)ことからなる、低級
不飽和炭化水素の製造法。
(1) a. Lower unsaturated hydrocarbons containing impurities are passed through a pretreatment adsorbent bed to adsorb and remove impurities with higher adsorption activity than lower unsaturated hydrocarbons (pretreatment); b. pretreatment Pass the non-adsorbed components in the main treatment adsorbent bed to adsorb lower unsaturated hydrocarbons (unsaturated HC adsorption treatment), c. Next, remove impurities remaining in the spaces of the main treatment adsorption bed. (residual impurity removal treatment), d. Next, remove impurities adsorbed on the main treatment adsorbent bed (adsorption impurity removal treatment); e. Further, lower unsaturated hydrocarbons are desorbed from the main treatment adsorption bed. A method for producing lower unsaturated hydrocarbons, comprising: (unsaturated HC desorption treatment).
(2)c、の残留不純物除去処理が下記d、の吸着不純
物除去処理において該吸着剤床から流出するガスを本処
理吸着剤床に通して該空間部に残留している不純物の全
部および該吸着剤床に吸着している不純物の一部を除去
し、かつ、d、の吸着不純物除去処理が該吸着剤床を加
熱して該吸着剤床に吸着している残りの不純物を除去す
るものである、特許請求の範囲(1)項記載の方法。
(2) The residual impurity removal treatment in c. is performed by passing the gas flowing out from the adsorbent bed through the main treatment adsorbent bed in the adsorption impurity removal treatment in d below to remove all of the impurities remaining in the space. A part of the impurities adsorbed on the adsorbent bed is removed, and the adsorbed impurity removal treatment of d) heats the adsorbent bed to remove the remaining impurities adsorbed on the adsorbent bed. The method according to claim (1).
(3)a、不純物を含む低級不飽和炭化水素を前処理吸
着剤床に通して、低級不飽和炭化水素よりも吸着活性の
高い不純物を吸着させて除去し(前処理)、 b、前処理における非吸着成分を本処理吸着剤床に通し
て、低級不飽和炭化水素を吸着させ(不飽和HC吸着処
理)、 c、ついで、本処理吸着剤床の空間部に残留している不
純物を除去し(残留不純物除去処理)、 d、ついで、本処理吸着剤床に吸着している不純物を除
去し(吸着不純物除去処理)、 e、さらに、本処理吸着剤床から低級不飽和炭化水素を
、該吸着剤床に低級不飽和炭化水素よりも吸着活性の低
い種類のガスを通すことによって脱着させる(不飽和H
C脱着処理)ことからなる、低級不飽和炭化水素とこれ
よりも吸着活性の低い種類のガスとの混合ガスの製造法
(3) a. Passing lower unsaturated hydrocarbons containing impurities through a pretreatment adsorbent bed to adsorb and remove impurities with higher adsorption activity than lower unsaturated hydrocarbons (pretreatment); b. Pretreatment Pass the non-adsorbed components in the main treatment adsorbent bed to adsorb lower unsaturated hydrocarbons (unsaturated HC adsorption treatment), c. Next, remove impurities remaining in the spaces of the main treatment adsorption bed. (residual impurity removal treatment), d. Next, remove impurities adsorbed on the main treatment adsorbent bed (adsorption impurity removal treatment); e. Further, lower unsaturated hydrocarbons are removed from the main treatment adsorption bed, Desorption is carried out by passing a type of gas with lower adsorption activity than lower unsaturated hydrocarbons through the adsorbent bed (unsaturated H
A method for producing a mixed gas of a lower unsaturated hydrocarbon and a type of gas having a lower adsorption activity than the lower unsaturated hydrocarbon.
(4)c、の残留不純物除去処理が下記d、の吸着不純
物除去処理において本処理吸着剤床から流出するガスを
該吸着剤床に通して該空間部に残留している不純物の全
部および該吸着剤床に吸着している不純物の一部を除去
し、かつ、d、の吸着不純物除去処理が該吸着剤床を加
熱して該吸着剤床に吸着している残りの不純物を除去す
るものである、特許請求の範囲(3)項記載の方法。
(4) In the adsorption impurity removal process of d below, the residual impurity removal process in c. A part of the impurities adsorbed on the adsorbent bed is removed, and the adsorbed impurity removal treatment of d) heats the adsorbent bed to remove the remaining impurities adsorbed on the adsorbent bed. The method according to claim (3).
JP18479085A 1985-08-22 1985-08-22 Method for producing high-purity acetylene gas Expired - Lifetime JPH0618795B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18479085A JPH0618795B2 (en) 1985-08-22 1985-08-22 Method for producing high-purity acetylene gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18479085A JPH0618795B2 (en) 1985-08-22 1985-08-22 Method for producing high-purity acetylene gas

Publications (2)

Publication Number Publication Date
JPS6245543A true JPS6245543A (en) 1987-02-27
JPH0618795B2 JPH0618795B2 (en) 1994-03-16

Family

ID=16159336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18479085A Expired - Lifetime JPH0618795B2 (en) 1985-08-22 1985-08-22 Method for producing high-purity acetylene gas

Country Status (1)

Country Link
JP (1) JPH0618795B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01132535A (en) * 1987-11-19 1989-05-25 Toho Asechiren Kk Concentration of acetylene gas
JPH0228539A (en) * 1988-07-19 1990-01-30 Toho Asechiren Kk High-purity gaseous acetylene composition for atomic absorption and atomic emission analysis
KR100651356B1 (en) * 2002-03-29 2006-11-28 에스케이 주식회사 Method for removing impurities from heavy hydrocarbon and deasphalt oil
WO2011010613A1 (en) * 2009-07-21 2011-01-27 大陽日酸株式会社 Method for supplying acetylene
JP2011201809A (en) * 2010-03-25 2011-10-13 Taiyo Nippon Sanso Corp Installation for producing acetylene and method for producing acetylene
JP2015124198A (en) * 2013-12-27 2015-07-06 株式会社トクヤマ Method for producing higher chloroalkenes

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01132535A (en) * 1987-11-19 1989-05-25 Toho Asechiren Kk Concentration of acetylene gas
JPH0228539A (en) * 1988-07-19 1990-01-30 Toho Asechiren Kk High-purity gaseous acetylene composition for atomic absorption and atomic emission analysis
KR100651356B1 (en) * 2002-03-29 2006-11-28 에스케이 주식회사 Method for removing impurities from heavy hydrocarbon and deasphalt oil
WO2011010613A1 (en) * 2009-07-21 2011-01-27 大陽日酸株式会社 Method for supplying acetylene
JP2011026205A (en) * 2009-07-21 2011-02-10 Taiyo Nippon Sanso Corp Method for producing acetylene
JP2011201809A (en) * 2010-03-25 2011-10-13 Taiyo Nippon Sanso Corp Installation for producing acetylene and method for producing acetylene
JP2015124198A (en) * 2013-12-27 2015-07-06 株式会社トクヤマ Method for producing higher chloroalkenes

Also Published As

Publication number Publication date
JPH0618795B2 (en) 1994-03-16

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