JPH0618795B2 - Method for producing high-purity acetylene gas - Google Patents
Method for producing high-purity acetylene gasInfo
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- JPH0618795B2 JPH0618795B2 JP18479085A JP18479085A JPH0618795B2 JP H0618795 B2 JPH0618795 B2 JP H0618795B2 JP 18479085 A JP18479085 A JP 18479085A JP 18479085 A JP18479085 A JP 18479085A JP H0618795 B2 JPH0618795 B2 JP H0618795B2
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- acetylene
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- adsorbent bed
- impurities
- adsorbed
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、アセチレンまたはこれを含む高純度ガスの製
造法に関するものである。TECHNICAL FIELD The present invention relates to a method for producing acetylene or a high-purity gas containing the same.
高純度のアセチレンガスは、精留や溶媒による吸収法に
よって製造されていた。High-purity acetylene gas was produced by rectification or an absorption method using a solvent.
本発明は、比較的操作の容易な吸着法によって、高純度
のアセチレンまたはアセチレンとこれよりも吸着活性の
低い種類のガスとの高純度混合ガスを製造することがで
きる方法を提供するものである。The present invention provides a method capable of producing a high-purity acetylene or a high-purity mixed gas of acetylene and a gas having a lower adsorptive activity than that by a relatively easy-to-operate adsorption method. .
本発明は、 a. 不純物を含むアセチレンを前処理吸着剤床に通し
て、０〜20℃、絶対圧１〜３kg／cm2 でゼオライト３
Ａ、ゼオライト４Ａまたは活性炭と接触させてアセチレ
ンよりも吸着活性の高い不純物を吸着させて除去し（前
処理）、 b. 前処理における非吸着成分を本処理吸着剤床に通し
て０〜70℃、絶対圧 0.131〜３kg／cm2 でゼオライト４
Ａまたはゼオライト５Ａと接触させてアセチレンを吸着
させ（アセチレン吸着処理）、 c. ついで、下記d.の吸着不純物除去処理において本処
理吸着剤床から流出したガスを20℃未満、絶対圧３kg／
cm2 以下にして本処理吸着剤床に通して該空間部に残留
している不純物の全部および該吸着剤床に吸着している
不純物の一部を除去し（残留不純物除去処理）、 d. ついで、本処理吸着剤床を20〜50℃に加熱し、圧力
はc.における操作圧より高くして該吸着剤床に吸着して
いる残りの不純物を除去し（吸着不純物除去処理）、 e. さらに、本処理吸着剤床を40〜90℃に、ただしd.に
おける処理温度より高くしてアセチレンを脱着させる
（アセチレン脱着処理）ことからなる、高純度アセチレ
ンガスの製造法 または 上記e.のアセチレン脱着処理において、アセチレンの脱
着を本処理吸着剤床に加熱したアセチレンよりも吸着活
性の低い種類のガス（以下、「第２成分」という）を通
すことによって行なうことにより40〜90℃に加熱し、た
だしｄにおける処理温度よりも高くしてアセチレンを吸
着させることからなるアセチレンとこれよりも吸着活性
の低い種類のガスとの高純度混合ガスの製造法 を要旨とする。これによって、アセチレンまたはこれと
第２成分とからなる高純度ガスがえられる。According to the present invention, a. Acetylene containing impurities is passed through a pretreatment adsorbent bed at 0 to 20 ° C. and an absolute pressure of 1 to 3 kg / cm 2 to obtain zeolite
A, Zeolite 4A or activated carbon is contacted to adsorb and remove impurities having higher adsorption activity than acetylene (pretreatment), b. Non-adsorbed components in pretreatment are passed through the adsorbent bed of this treatment to 0 to 70 ° C. , Zeolite 4 at absolute pressure 0.131-3kg / cm 2
Adsorb acetylene by contacting it with A or zeolite 5A (acetylene adsorption treatment), and c. Then, the gas flowing out from this treatment adsorbent bed in the adsorbent removal treatment of d.
All the impurities remaining in the space through the treatment adsorbent bed to less than cm 2 and a part of the impurities adsorbed in the adsorbent bed are removed (residual impurity removal treatment), and d. Then, the adsorbent bed of the present treatment is heated to 20 to 50 ° C. and the pressure is made higher than the operating pressure in c. To remove the residual impurities adsorbed on the adsorbent bed (adsorption impurity removal treatment), Further, a method for producing high-purity acetylene gas, which comprises desorbing acetylene by raising the temperature of the adsorbent bed of the present treatment to 40 to 90 ° C., but higher than the treatment temperature in d. (Acetylene desorption treatment) or the above e. In acetylene desorption treatment, desorption of acetylene is carried out by passing a gas of a type with lower adsorption activity than the heated acetylene (hereinafter referred to as "second component") to the adsorbent bed of this treatment, thereby heating to 40 to 90 ° C. But in d To be higher than the physical temperature acetylene which comprises adsorbing acetylene than this and gist the preparation of high-purity mixed gas of low kind of gas adsorption activity. As a result, acetylene or a high-purity gas composed of this and the second component is obtained.
アセチレンと混合して用いられる有用な第２成分として
水素，ヘリウム，アルゴン等があるが、本発明は、いず
れにも適用することができる。Hydrogen, helium, argon and the like are useful second components to be mixed with acetylene, but the present invention can be applied to any of them.
以下、各工程を詳細に説明する。Hereinafter, each step will be described in detail.
＜前処理＞ 水分，二酸化炭素，アセトン，ジメチルホルムアミド等
は、通常アセチレンよりも吸着活性が高いので、前処理
で除去される。ここで使用される吸着剤としては、ゼオ
ライト３Ａ，ゼオライト４Ａまたは活性炭が適してお
り、本発明ではこれらを使用する。０〜20℃，絶対圧１
〜３kg／cm2 でこの処理を行なえばよい。前処理吸着剤
床は、図面（符号１および２）に示すように、直列に連
結した二つの吸着剤床からなるものを使用して吸着効率
を高くすることができる。この場合、原料ガスの流れに
ついて上流側の吸着剤床に活性炭を使用して主として有
機不純物を、かつ、下流側の吸着剤床にゼオライト３Ａ
またはゼオライト４Ａを使用して主として水分を吸着さ
せるのがよい。<Pretreatment> Since water, carbon dioxide, acetone, dimethylformamide and the like usually have higher adsorption activity than acetylene, they are removed by the pretreatment. As the adsorbent used here, zeolite 3A, zeolite 4A or activated carbon is suitable, and these are used in the present invention. 0 ~ 20 ℃, absolute pressure 1
This treatment may be performed at ~ 3 kg / cm 2 . The pretreatment adsorbent bed can be made of two adsorbent beds connected in series to increase the adsorption efficiency as shown in the drawings (reference numerals 1 and 2). In this case, activated carbon is used mainly in the adsorbent bed on the upstream side of the flow of the raw material gas to mainly contain organic impurities, and zeolite 3A is used in the adsorbent bed on the downstream side.
Alternatively, it is preferable to use zeolite 4A to mainly adsorb water.
＜アセチレン吸着処理＞ 前処理の次に前処理吸着剤床を出たガスは、本処理吸着
剤床に通してアセチレンを吸着させ、その非吸着成分で
ある不純物を該吸着剤床から流出させる。この不純物
は、たとえば、酸素、窒素、一酸化炭素等であり、その
一部は該吸着剤床に弱く吸着されて残る。ここで使用す
る吸着剤としては、ゼオライト４Ａまたはゼオライト５
Ａが適しており、本発明ではこれらを使用する。この処
理の温度が低いほど、また圧力が高いほど吸着容量が高
くなるが、この不純物の吸着量も大きくなるので、０〜
70℃このましくは20〜60℃，絶対圧 0.131〜３kg／cm2
このましくは 0.8〜２kg／cm2 でこの処理を行なえばよ
い。<Acetylene Adsorption Treatment> The gas discharged from the pretreatment adsorbent bed after the pretreatment is passed through the main treatment adsorbent bed to adsorb acetylene, and the impurities that are non-adsorbed components thereof are discharged from the adsorbent bed. The impurities are, for example, oxygen, nitrogen, carbon monoxide, etc., and some of them remain weakly adsorbed on the adsorbent bed. The adsorbent used here is zeolite 4A or zeolite 5
A is suitable and these are used in the present invention. The lower the temperature of this treatment and the higher the pressure, the higher the adsorption capacity, but the adsorbed amount of this impurity also increases.
70 ℃, preferably 20-60 ℃, absolute pressure 0.131-3kg / cm 2
This treatment is preferably carried out at 0.8 to 2 kg / cm 2 .
＜残留不純物除去処理＞ アセチレン吸着処理完了時には、本処理吸着剤床の空間
部に不純物が残留しているだけでなく、上記のとおり通
常不純物の一部が吸着剤に弱く吸着している。<Residual Impurity Removal Treatment> Upon completion of the acetylene adsorption treatment, not only impurities remain in the space of the adsorbent bed of this treatment, but also some of the ordinary impurities are weakly adsorbed on the adsorbent as described above.
まず上記本処理吸着剤床の空間部に残留している不純物
を除去する。この際、吸着されている不純物の一部も必
然的に脱着されて除去される。この処理は、具体的に
は、ある程度高い純度のアセチレン、第２成分またはこ
れらの混合物を本処理吸着剤床に通して不純物を置換さ
せることによって行なう。この置換用ガスとしては、つ
ぎの吸着不純物除去処理で本処理吸着剤床を流出するガ
スをホルダーに貯えておき、これを利用するのが収率を
上げるうえでもっとも有利であり、それを吸着剤床空間
存在ガスの５〜20容量倍通せばよい。この処理は、アセ
チレンが脱着しないよう比較的低温で、また残留ガスの
置換・洗浄効率の点からアセチレン吸着処理の操作圧力
以下で行なうべきである。温度は20℃未満、とくに10℃
以下がよく、操作圧力は絶対圧３kg／cm2 以下がよい。First, impurities remaining in the space of the bed of the present treatment adsorbent are removed. At this time, some of the adsorbed impurities are necessarily desorbed and removed. Specifically, this treatment is carried out by passing acetylene, the second component, or a mixture thereof having a rather high degree of purity through the bed of the present treated adsorbent to replace impurities. As this replacement gas, it is most advantageous to store the gas flowing out of the adsorbent bed of this treatment in the holder in the next adsorbed impurity removal treatment, and use this gas to increase the yield. It is sufficient to pass 5 to 20 volumes of the gas existing in the agent space. This treatment should be performed at a relatively low temperature so that acetylene is not desorbed, and below the operating pressure of the acetylene adsorption treatment from the viewpoint of residual gas replacement / cleaning efficiency. Temperature is below 20 ℃, especially 10 ℃
The following is preferable, and the operating pressure is 3 kg / cm 2 or less in absolute pressure.
＜吸着不純物除去処理＞ つぎに、本処理吸着剤床の吸着剤に吸着している不純物
を除去する。この処理は、吸着不純物を完全に脱着し、
かつアセチレンを脱着しにくい条件で行なわねばならな
い。しかし、不純物を完全に脱着させるには、アセチレ
ンの脱着は避けられない。通常、つぎのアセチレン脱着
処理でえられる製品中のアセチレンの10〜95％このまし
くは10〜50％を脱着させることによって不純物が完全に
脱着される。吸着剤床の加熱を、ガスを吸着剤床に通す
ことによって行なう場合は、このガスは高純度でなけれ
ばならない。つぎのアセチレン脱着処理でえられる製品
かまたは高純度の第２成分を使用してもよいが、吸着剤
床存在ガスを循環させるのが実際的である。もっとも、
アセチレンのみからなるガスの製造を目的とする場合
は、第２成分を利用することはできない。<Adsorbed Impurity Removal Treatment> Next, the impurities adsorbed by the adsorbent in the adsorbent bed of the present treatment are removed. This treatment completely desorbs adsorbed impurities,
In addition, it must be performed under conditions that make it difficult to remove acetylene. However, in order to completely desorb impurities, desorption of acetylene is unavoidable. Usually, impurities are completely desorbed by desorbing 10 to 95%, preferably 10 to 50%, and preferably 10 to 50% of acetylene in the product obtained by the following acetylene desorption treatment. If heating of the adsorbent bed is carried out by passing the gas through the adsorbent bed, the gas must be of high purity. The product obtained in the following acetylene desorption treatment or a high-purity second component may be used, but it is practical to circulate the gas present in the adsorbent bed. However,
The second component cannot be used for the purpose of producing a gas consisting of acetylene only.
最終的な処理温度を20〜50℃このましくは30〜40℃に
し、圧力は、残留不純物除去処理の操作圧よりも高くし
て、ここでえられるガスを次のサイクルで残留不純物除
去処理に供するのを容易にするのがよい。The final treatment temperature is 20 to 50 ° C, preferably 30 to 40 ° C, and the pressure is higher than the operating pressure of the residual impurity removal treatment, and the gas obtained here is subjected to the residual impurity removal treatment in the next cycle. It should be easy to serve.
＜アセチレン脱着処理＞ 不純物除去処理ののち、本処理吸着剤床を加熱してアセ
チレンを脱着させる。アセチレンのみからなるガスを製
造する場合は、伝熱管によっておよび／または製品アセ
チレンガスを本処理吸着剤床に通すことによって加熱す
る。第２成分との混合ガスを製造する場合は、高純度の
第２成分を本処理吸着剤床に通すことによって加熱しな
ければならない。この場合処理温度が高いほどよく脱着
されるが、次の吸着処理のために吸着剤床を冷却するの
に長時間を要することとなる。この温度は40〜90℃この
ましくは60〜80℃とするのがよい。<Acetylene desorption treatment> After the impurity removal treatment, the adsorbent bed for the present treatment is heated to desorb acetylene. When producing a gas consisting solely of acetylene, it is heated by a heat transfer tube and / or by passing the product acetylene gas through the treated adsorbent bed. When producing a gas mixture with the second component, the high-purity second component must be heated by passing it through the treated adsorbent bed. In this case, the higher the treatment temperature, the better the desorption, but it takes a long time to cool the adsorbent bed for the next adsorption treatment. This temperature is 40 to 90 ° C, preferably 60 to 80 ° C.
以上の本処理吸着剤床における処理温度は、それに流入
するガスの温度を調製すると同時に、吸着剤床の外部ま
たは内部に伝熱管を設け、間接的に加熱または冷却をす
ることによって容易に調製することができるが、以上説
明したとおり、製品ガスの種類や製造設備の規模その他
の条件によっては、そのいずれかの手段のみによって行
なうこともできる。The treatment temperature in the main treatment adsorbent bed described above is easily adjusted by adjusting the temperature of the gas flowing into it, and at the same time, by indirectly providing heating or cooling by providing a heat transfer tube outside or inside the adsorbent bed. However, as described above, depending on the type of product gas, the scale of the manufacturing facility, and other conditions, it is possible to use only one of these means.
［実施例］ 本発明の実施例を、図を使用して説明する。Example An example of the present invention will be described with reference to the drawings.
実施例１ ジメチルホルムアミド 70 ppm，水分 41ppm ，二酸化
炭素 100 ppm ，窒素 2300 ppmおよび酸素 100 ppm
を不純物として含むアセチレンを、弁４を経て、北越炭
素工業(株)製粒状活性炭Y-6 82gを充填した前処理吸
着剤床１に２／minの流量で通して20℃，絶対圧 1.31
kg／cm2 の条件で処理し、それから流出するガスを東洋
曹達工業(株)製ゼオライト４Ａ ゼオラムA-4 151ｇ
を充填した前処理吸着剤床２に通して20℃，絶対圧 1.3
1 kg／cm2 の条件で処理し、それから流出するガスを弁
５を経て東洋曹達工業(株)製ゼオライト５Ａ ゼオラム
A-5 151ｇを充填した本処理吸着剤床３に通して20
℃，絶対圧 1.31kg ／cm2 で処理した。10min 後本処理
吸着剤床３がアセチレンで飽和したので（流出ガスを分
析して確認した）、弁４および５を閉じた。Example 1 Dimethylformamide 70 ppm, water 41 ppm, carbon dioxide 100 ppm, nitrogen 2300 ppm and oxygen 100 ppm.
The acetylene containing as an impurity is passed through valve 4 through pretreatment adsorbent bed 1 filled with 82 g of granular activated carbon Y-6 manufactured by Hokuetsu Carbon Industry Co., Ltd. at a flow rate of 2 / min at 20 ° C. and an absolute pressure of 1.31.
Treated under the condition of kg / cm 2 and the gas flowing out from the same is treated with Toyo Soda Kogyo Co., Ltd. Zeolite 4A Zeolum A-4 151 g
Through the pretreatment adsorbent bed 2 filled with water at 20 ° C, absolute pressure 1.3
Treated under the condition of 1 kg / cm 2 and the gas flowing out from it is passed through valve 5 and manufactured by Toyo Soda Kogyo Co., Ltd. Zeolite 5A Zeolum
Pass through this treated adsorbent bed 3 filled with 151 g of A-5 20
Processed at ℃ and absolute pressure 1.31kg / cm 2 . After 10 min the adsorbent bed 3 of the present treatment was saturated with acetylene (analyzed effluent gas was confirmed) so valves 4 and 5 were closed.
次に、真空ポンプ７で本処理吸着剤床３の内圧を絶対圧
0.13 kg／cm2 まで減圧し、本処理吸着剤床３を冷却コ
イル９で冷却し、ホルダー６に貯えられている不純物濃
度５ppm 、絶対圧 0.46 kg／cm2 のアセチレンを、冷却
器８で -10℃に冷却し、真空ポンプ７から排出させなが
ら本処理吸着剤床３の圧力を絶対圧 0.13kg／cm2 に維
持して本処理吸着剤床３にその空間存在ガスの20容量倍
（０．４Ｎｌ）通した。本処理吸着剤床３の最終温度
は、６℃であった。Next, the internal pressure of the main adsorbent bed 3 is absolute pressure by the vacuum pump 7.
The pressure is reduced to 0.13 kg / cm 2 , the adsorbent bed 3 for treatment is cooled by the cooling coil 9, and the acetylene having an impurity concentration of 5 ppm and an absolute pressure of 0.46 kg / cm 2 stored in the holder 6 is cooled by the cooler 8. While being cooled to 10 ° C. and being discharged from the vacuum pump 7, the pressure of the main adsorbent bed 3 is maintained at an absolute pressure of 0.13 kg / cm 2 and the capacity of the main adsorbent bed 3 is 20 volume times (0 .4 Nl). The final temperature of this treated adsorbent bed 3 was 6 ° C.
次に、本処理吸着剤床３をヒーター１０で35℃まで加熱
し、吸着剤床内空間存在アセチレンを導管１４，ブロア
ー１２およびヒーター１３経由で本処理吸着剤床３に循
環し、えられた最終絶対圧 0.46 kg／cm2 、35℃のガス
をホルダー６に回収した。このガスの不純物濃度は５pp
m であった。Next, the main treatment adsorbent bed 3 was heated to 35 ° C. by the heater 10, and the acetylene existing in the adsorbent bed space was circulated to the main treatment adsorbent bed 3 via the conduit 14, the blower 12 and the heater 13, and was obtained. Gas at a final absolute pressure of 0.46 kg / cm 2 and 35 ° C. was collected in the holder 6. The impurity concentration of this gas is 5pp
It was m.
次にホルダー１５に貯えられている不純物濃度 0.5 ppm
以下のアセチレンをヒーター１１で80℃に加熱して本処
理吸着剤床３に通し、同時にヒーター１０で該吸着剤床
の温度を80℃に維持し、 0.5 ppm以下のアセチレンガス
を、絶対圧１kg／cm2 、25℃換算で 1.09 えた。Next, the impurity concentration stored in the holder 15 is 0.5 ppm
The following acetylene is heated to 80 ° C by the heater 11 and passed through the adsorbent bed 3 for the main treatment, and at the same time, the temperature of the adsorbent bed is maintained at 80 ° C by the heater 10 and 0.5 ppm or less of acetylene gas is used at an absolute pressure of 1 kg. / Cm 2 , 1.09 in terms of 25 ° C.
実施例２ 下記条件を除いて、実施例１と同じ条件で処理して水素
−アセチレン混合ガスをえた。Example 2 A hydrogen-acetylene mixed gas was obtained by treating under the same conditions as in Example 1 except for the following conditions.
前処理操作圧 操作圧 絶対圧 1.8kg／cm2 アセチレン吸着処理 操作圧 絶対圧 1.8kg／cm2 残留不純物除去処理 ホルダー６のガス 不純物 ４ppm アセチレン 30vol% 水素 70vol% 操作温度 ０℃ 操作圧 絶対圧１kg／cm2 流通ガス量 本処理吸着剤床の空間存在ガスの
７容量倍 最終本処理吸着剤床温度 ９℃ 吸着不純物除去処理 供給ガス中の不純物 １ppm以下（吸着剤床空間部のガ
スを循環するかわりに水素を供給した） 操作温度 25℃ 最終圧 絶対圧 1.8kg／cm2 流出ガス温度 25℃ 最終ガス中の不純物 ４ppm アセチレン脱着処理 供給ガス 不純物 １ppm 以下，１ 操作温度 70℃ 操作圧 絶対圧５kg／cm2 製品ガス 不純物 １ppm アセチレン 20vol% 水素 80vol% 絶対圧５kg／cm2、０℃換算 1.25 比較例１ 吸着不純物除去処理を行なわず、その他は実施例１と同
じ条件で実施した。Pretreatment Operating pressure Operating pressure Absolute pressure 1.8kg / cm 2 Acetylene adsorption treatment Operating pressure Absolute pressure 1.8kg / cm 2 Residual impurity removal treatment Gas of holder 6 Impurities 4ppm Acetylene 30vol% Hydrogen 70vol% Operating temperature 0 ℃ Operating pressure Absolute pressure 1kg / Cm 2 Volume of gas flowing 7 times the volume of gas present in the space of the adsorbent bed of this treatment Final temperature of adsorbent bed of this treatment 9 ° C Adsorption impurities removal treatment Impurities in the supply gas 1 ppm or less (gas in adsorbent bed space is circulated) Hydrogen was supplied instead) Operating temperature 25 ° C Final pressure Absolute pressure 1.8kg / cm 2 Outflow gas temperature 25 ° C Impurities in final gas 4ppm Acetylene desorption treatment Supply gas Impurities 1ppm or less, 1 operating temperature 70 ° C Operating pressure Absolute pressure 5kg / Cm 2 Product gas Impurities 1 ppm Acetylene 20vol% Hydrogen 80vol% Absolute pressure 5kg / cm 2 , 0 ° C conversion 1.25 Comparative Example 1 Adsorbed impurities were not removed, and the other conditions were the same as in Example 1.
不純物濃度２ppm のアセチレンが絶対圧１kg／cm2 、25
℃換算で 1.62えられた。Acetylene with an impurity concentration of 2 ppm has an absolute pressure of 1 kg / cm 2 , 25
It was 1.62 in terms of ° C.
図−１は、本発明の実施例の工程図を示す。 図中の符号 １，２，３：吸着剤床 ４，５：弁 ６，１５：ホルダー ８，９：クーラー １０，１１，１３，１７：ヒーター FIG. 1 shows a process chart of an embodiment of the present invention. Reference numerals 1, 2, 3: Adsorbent bed 4, 5: Valve 6, 15: Holder 8, 9: Cooler 10, 11, 13, 17: Heater
Claims (2)
剤床に通して、０〜20℃、絶対圧１〜３kg／cm2でゼオ
ライト３Ａ、ゼオライト４Ａまたは活性炭と接触させて
アセチレンよりも吸着活性の高い不純物を吸着させて除
去し（前処理）、 b. 前処理における非吸着成分を本処理吸着剤床に通し
て０〜70℃、絶対圧 0.131〜３kg／cm2でゼオライト４
Ａまたはゼオライト５Ａと接触させてアセチレンを吸着
させ（アセチレン吸着処理）、 c. ついで、下記d.の吸着不純物除去処理において本処
理吸着剤床から流出したガスを20℃未満、絶対圧３kg／
cm2以下にして本処理吸着剤床に通して該空間部に残留
している不純物の全部および該吸着剤床に吸着している
不純物の一部を除去し（残留不純物除去処理）、 d. ついで、本処理吸着剤床を20〜50℃に加熱し、圧力
はc.における操作圧より高くして該吸着剤床に吸着して
いる残りの不純物を除去し（吸着不純物除去処理）、 e. さらに、本処理吸着剤床を40〜90℃に、ただしd.に
おける処理温度より高くしてアセチレンを脱着させる
（アセチレン脱着処理） ことからなる、高純度アセチレンガスの製造法。1. Adsorbing acetylene containing impurities by passing it through a pretreatment adsorbent bed and contacting it with zeolite 3A, zeolite 4A or activated carbon at 0 to 20 ° C. and an absolute pressure of 1 to 3 kg / cm 2. Highly active impurities are adsorbed and removed (pretreatment), b. Non-adsorbed components in the pretreatment are passed through the adsorbent bed of this treatment at 0-70 ° C, absolute pressure 0.131-3kg / cm 2 Zeolite 4
Adsorb acetylene by contacting it with A or zeolite 5A (acetylene adsorption treatment), c. Then, in the adsorbed impurity removal treatment of d.
After passing through the adsorbent bed of the present treatment to less than cm 2 , all the impurities remaining in the space and a part of the impurities adsorbed in the adsorbent bed are removed (residual impurity removal treatment), and d. Then, the adsorbent bed of the present treatment is heated to 20 to 50 ° C. and the pressure is made higher than the operating pressure in c. To remove the residual impurities adsorbed on the adsorbent bed (adsorption impurity removal treatment). Furthermore, a method for producing high-purity acetylene gas, which comprises desorbing acetylene by heating the treated adsorbent bed at 40 to 90 ° C., but higher than the treatment temperature in d. (Acetylene desorption treatment).
剤床に通して、０〜20℃、絶対圧１〜３kg／cm2でゼオ
ライト３Ａ、ゼオライト４Ａまたは活性炭と接触させて
アセチレンよりも吸着活性の高い不純物を吸着させて除
去し（前処理）、 b. 前処理における非吸着成分を本処理吸着剤床に通し
て０〜70℃、絶対圧 0.131〜３kg／cm2でゼオライト４
Ａまたはゼオライト５Ａと接触させてアセチレンを吸着
させ（アセチレン吸着処理）、 c. ついで、下記d.の吸着不純物除去処理において本処
理吸着剤床から流出したガスを20℃未満、絶対圧３kg／
cm2以下にして本処理吸着剤床に通して該空間部に残留
している不純物の全部および該吸着剤床に吸着している
不純物の一部を除去し（残留不純物除去処理）、 d. ついで、本処理吸着剤床を20〜50℃に加熱し、圧力
はc.における操作圧より高くして該吸着剤床に吸着して
いる残りの不純物を除去し（吸着不純物除去処理）、 e. さらに、本処理吸着剤床を該吸着剤床に加熱したア
セチレンよりも吸着活性の低い種類のガスを通すことに
よって40〜90℃に加熱し、ただしd.における処理温度よ
り高くして、アセチレンを脱着させる（アセチレン脱着
処理） ことからなる、アセチレンとこれよりも吸着活性の低い
種類のガスとの高純度混合ガスの製造法。2. Acetylene containing impurities is passed through a pretreatment adsorbent bed and brought into contact with zeolite 3A, zeolite 4A or activated carbon at 0 to 20 ° C. and an absolute pressure of 1 to 3 kg / cm 2 to adsorb acetylene more than acetylene. Highly active impurities are adsorbed and removed (pretreatment), b. Non-adsorbed components in the pretreatment are passed through the adsorbent bed of this treatment at 0-70 ° C, absolute pressure 0.131-3kg / cm 2 Zeolite 4
Adsorb acetylene by contacting it with A or zeolite 5A (acetylene adsorption treatment), c. Then, in the adsorbed impurity removal treatment of d.
After passing through the adsorbent bed of the present treatment to less than cm 2 , all the impurities remaining in the space and a part of the impurities adsorbed in the adsorbent bed are removed (residual impurity removal treatment), and d. Then, the adsorbent bed of the present treatment is heated to 20 to 50 ° C. and the pressure is made higher than the operating pressure in c. To remove the residual impurities adsorbed on the adsorbent bed (adsorption impurity removal treatment). Further, the treated adsorbent bed is heated to 40 to 90 ° C. by passing a gas of a kind having lower adsorption activity than the heated acetylene through the adsorbent bed, but at a temperature higher than the treatment temperature in d. A method for producing a high-purity mixed gas of acetylene and a gas having a lower adsorption activity than acetylene, which comprises desorbing acetylene (acetylene desorption treatment).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18479085A JPH0618795B2 (en) | 1985-08-22 | 1985-08-22 | Method for producing high-purity acetylene gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18479085A JPH0618795B2 (en) | 1985-08-22 | 1985-08-22 | Method for producing high-purity acetylene gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6245543A JPS6245543A (en) | 1987-02-27 |
| JPH0618795B2 true JPH0618795B2 (en) | 1994-03-16 |
Family
ID=16159336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18479085A Expired - Lifetime JPH0618795B2 (en) | 1985-08-22 | 1985-08-22 | Method for producing high-purity acetylene gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0618795B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01132535A (en) * | 1987-11-19 | 1989-05-25 | Toho Asechiren Kk | Concentration of acetylene gas |
| JPH0228539A (en) * | 1988-07-19 | 1990-01-30 | Toho Asechiren Kk | High-purity gaseous acetylene composition for atomic absorption and atomic emission analysis |
| KR100651356B1 (en) * | 2002-03-29 | 2006-11-28 | 에스케이 주식회사 | Method for removing impurities from heavy hydrocarbon and deasphalt oil |
| JP5583932B2 (en) * | 2009-07-21 | 2014-09-03 | 大陽日酸株式会社 | Method for producing acetylene |
| JP5643529B2 (en) * | 2010-03-25 | 2014-12-17 | 大陽日酸株式会社 | Method for producing acetylene |
| JP6173908B2 (en) * | 2013-12-27 | 2017-08-02 | 株式会社トクヤマ | Method for producing chloro higher alkene |
-
1985
- 1985-08-22 JP JP18479085A patent/JPH0618795B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6245543A (en) | 1987-02-27 |
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