JPS6244693B2 - - Google Patents

Info

Publication number
JPS6244693B2
JPS6244693B2 JP54048602A JP4860279A JPS6244693B2 JP S6244693 B2 JPS6244693 B2 JP S6244693B2 JP 54048602 A JP54048602 A JP 54048602A JP 4860279 A JP4860279 A JP 4860279A JP S6244693 B2 JPS6244693 B2 JP S6244693B2
Authority
JP
Japan
Prior art keywords
electrode
semiconductor substrate
rectifying transistor
drain
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54048602A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55140261A (en
Inventor
Masaaki Kimata
Koichiro Masuko
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP4860279A priority Critical patent/JPS55140261A/ja
Publication of JPS55140261A publication Critical patent/JPS55140261A/ja
Publication of JPS6244693B2 publication Critical patent/JPS6244693B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • H10D89/213Design considerations for internal polarisation in field-effect devices
    • H10D89/215Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP4860279A 1979-04-19 1979-04-19 Substrate potential generator Granted JPS55140261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4860279A JPS55140261A (en) 1979-04-19 1979-04-19 Substrate potential generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4860279A JPS55140261A (en) 1979-04-19 1979-04-19 Substrate potential generator

Publications (2)

Publication Number Publication Date
JPS55140261A JPS55140261A (en) 1980-11-01
JPS6244693B2 true JPS6244693B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=12807947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4860279A Granted JPS55140261A (en) 1979-04-19 1979-04-19 Substrate potential generator

Country Status (1)

Country Link
JP (1) JPS55140261A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235668A (ja) * 1985-08-09 1987-02-16 Nec Corp 半導体記憶装置
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置

Also Published As

Publication number Publication date
JPS55140261A (en) 1980-11-01

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