JPS6244434B2 - - Google Patents
Info
- Publication number
- JPS6244434B2 JPS6244434B2 JP12831778A JP12831778A JPS6244434B2 JP S6244434 B2 JPS6244434 B2 JP S6244434B2 JP 12831778 A JP12831778 A JP 12831778A JP 12831778 A JP12831778 A JP 12831778A JP S6244434 B2 JPS6244434 B2 JP S6244434B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- diode
- predetermined wavelength
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
- H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Signal Processing (AREA)
- Composite Materials (AREA)
- Chemical & Material Sciences (AREA)
- Computer Networks & Wireless Communication (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7731274A FR2406896A1 (fr) | 1977-10-18 | 1977-10-18 | Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5466789A JPS5466789A (en) | 1979-05-29 |
| JPS6244434B2 true JPS6244434B2 (US06262066-20010717-C00315.png) | 1987-09-21 |
Family
ID=9196618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12831778A Granted JPS5466789A (en) | 1977-10-18 | 1978-10-18 | Diode for generating and detecting light of predetermined wavelength |
Country Status (6)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03194933A (ja) * | 1989-12-22 | 1991-08-26 | Tokyo Electron Sagami Ltd | 処理装置 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2070859B (en) * | 1980-02-07 | 1984-03-21 | Stanley Electric Co Ltd | Hetero-junction light-emitting diode |
| US4327962A (en) * | 1980-02-13 | 1982-05-04 | Redman Charles M | Laser/amplifier/detector diode |
| SE423752B (sv) * | 1980-09-29 | 1982-05-24 | Asea Ab | Optiskt sensorelement |
| FR2493047A1 (fr) * | 1980-10-28 | 1982-04-30 | Thomson Csf | Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique |
| JPS57163754U (US06262066-20010717-C00315.png) * | 1981-04-06 | 1982-10-15 | ||
| JPS5914353U (ja) * | 1982-07-16 | 1984-01-28 | オムロン株式会社 | 発光・受光装置 |
| FR2570836B1 (fr) * | 1984-09-21 | 1987-11-20 | Thomson Csf | Dispositif a ligne a retard optique circulante |
| EP0269393B2 (en) * | 1986-11-20 | 2000-03-22 | Ciba Specialty Chemicals Water Treatments Limited | Absorbent products and their manufacture |
| ES2044954T3 (es) * | 1986-11-20 | 1994-01-16 | Allied Colloids Ltd | Productos absorbentes y su fabricacion. |
| US4864369A (en) * | 1988-07-05 | 1989-09-05 | Hewlett-Packard Company | P-side up double heterojunction AlGaAs light-emitting diode |
| US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
| US6229160B1 (en) | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
| US6565981B1 (en) | 1999-03-30 | 2003-05-20 | Stockhausen Gmbh & Co. Kg | Polymers that are cross-linkable to form superabsorbent polymers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269284A (en) * | 1975-12-05 | 1977-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS52114289A (en) * | 1976-03-22 | 1977-09-24 | Mitsubishi Electric Corp | Semiconductor light emittiing element |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2273371B1 (US06262066-20010717-C00315.png) * | 1974-05-28 | 1978-03-31 | Thomson Csf | |
| FR2319980A1 (fr) * | 1975-07-28 | 1977-02-25 | Radiotechnique Compelec | Dispositif optoelectronique semi-conducteur reversible |
| US4138274A (en) * | 1976-06-09 | 1979-02-06 | Northern Telecom Limited | Method of producing optoelectronic devices with control of light propagation by proton bombardment |
| US4124826A (en) * | 1977-03-01 | 1978-11-07 | Bell Telephone Laboratories, Incorporated | Current confinement in semiconductor lasers |
| US4152713A (en) * | 1977-12-05 | 1979-05-01 | Bell Telephone Laboratories, Incorporated | Unidirectional optical device and regenerator |
-
1977
- 1977-10-18 FR FR7731274A patent/FR2406896A1/fr active Granted
-
1978
- 1978-09-29 DE DE7878400120T patent/DE2862135D1/de not_active Expired
- 1978-09-29 EP EP78400120A patent/EP0001728B1/fr not_active Expired
- 1978-10-12 US US05/950,792 patent/US4218692A/en not_active Expired - Lifetime
- 1978-10-17 CA CA313,637A patent/CA1125423A/en not_active Expired
- 1978-10-18 JP JP12831778A patent/JPS5466789A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269284A (en) * | 1975-12-05 | 1977-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS52114289A (en) * | 1976-03-22 | 1977-09-24 | Mitsubishi Electric Corp | Semiconductor light emittiing element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03194933A (ja) * | 1989-12-22 | 1991-08-26 | Tokyo Electron Sagami Ltd | 処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2406896B1 (US06262066-20010717-C00315.png) | 1982-02-19 |
| DE2862135D1 (en) | 1983-01-27 |
| EP0001728A1 (fr) | 1979-05-02 |
| EP0001728B1 (fr) | 1982-12-22 |
| CA1125423A (en) | 1982-06-08 |
| US4218692A (en) | 1980-08-19 |
| JPS5466789A (en) | 1979-05-29 |
| FR2406896A1 (fr) | 1979-05-18 |
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