JPS5466789A - Diode for generating and detecting light of predetermined wavelength - Google Patents

Diode for generating and detecting light of predetermined wavelength

Info

Publication number
JPS5466789A
JPS5466789A JP12831778A JP12831778A JPS5466789A JP S5466789 A JPS5466789 A JP S5466789A JP 12831778 A JP12831778 A JP 12831778A JP 12831778 A JP12831778 A JP 12831778A JP S5466789 A JPS5466789 A JP S5466789A
Authority
JP
Japan
Prior art keywords
diode
generating
predetermined wavelength
detecting light
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12831778A
Other languages
English (en)
Other versions
JPS6244434B2 (ja
Inventor
Dou Kuremuu Boodoan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5466789A publication Critical patent/JPS5466789A/ja
Publication of JPS6244434B2 publication Critical patent/JPS6244434B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
JP12831778A 1977-10-18 1978-10-18 Diode for generating and detecting light of predetermined wavelength Granted JPS5466789A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7731274A FR2406896A1 (fr) 1977-10-18 1977-10-18 Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques

Publications (2)

Publication Number Publication Date
JPS5466789A true JPS5466789A (en) 1979-05-29
JPS6244434B2 JPS6244434B2 (ja) 1987-09-21

Family

ID=9196618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12831778A Granted JPS5466789A (en) 1977-10-18 1978-10-18 Diode for generating and detecting light of predetermined wavelength

Country Status (6)

Country Link
US (1) US4218692A (ja)
EP (1) EP0001728B1 (ja)
JP (1) JPS5466789A (ja)
CA (1) CA1125423A (ja)
DE (1) DE2862135D1 (ja)
FR (1) FR2406896A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57163754U (ja) * 1981-04-06 1982-10-15
JPS5914353U (ja) * 1982-07-16 1984-01-28 オムロン株式会社 発光・受光装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
US4327962A (en) * 1980-02-13 1982-05-04 Redman Charles M Laser/amplifier/detector diode
SE423752B (sv) * 1980-09-29 1982-05-24 Asea Ab Optiskt sensorelement
FR2493047A1 (fr) * 1980-10-28 1982-04-30 Thomson Csf Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique
FR2570836B1 (fr) * 1984-09-21 1987-11-20 Thomson Csf Dispositif a ligne a retard optique circulante
JP2546695B2 (ja) * 1986-11-20 1996-10-23 アライド・コロイズ・リミテツド 吸収性生成物の製造方法
ES2044954T3 (es) * 1986-11-20 1994-01-16 Allied Colloids Ltd Productos absorbentes y su fabricacion.
US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode
JPH03194933A (ja) * 1989-12-22 1991-08-26 Tokyo Electron Sagami Ltd 処理装置
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6565981B1 (en) 1999-03-30 2003-05-20 Stockhausen Gmbh & Co. Kg Polymers that are cross-linkable to form superabsorbent polymers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269284A (en) * 1975-12-05 1977-06-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS52114289A (en) * 1976-03-22 1977-09-24 Mitsubishi Electric Corp Semiconductor light emittiing element

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2273371B1 (ja) * 1974-05-28 1978-03-31 Thomson Csf
FR2319980A1 (fr) * 1975-07-28 1977-02-25 Radiotechnique Compelec Dispositif optoelectronique semi-conducteur reversible
US4138274A (en) * 1976-06-09 1979-02-06 Northern Telecom Limited Method of producing optoelectronic devices with control of light propagation by proton bombardment
US4124826A (en) * 1977-03-01 1978-11-07 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor lasers
US4152713A (en) * 1977-12-05 1979-05-01 Bell Telephone Laboratories, Incorporated Unidirectional optical device and regenerator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269284A (en) * 1975-12-05 1977-06-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS52114289A (en) * 1976-03-22 1977-09-24 Mitsubishi Electric Corp Semiconductor light emittiing element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57163754U (ja) * 1981-04-06 1982-10-15
JPS5914353U (ja) * 1982-07-16 1984-01-28 オムロン株式会社 発光・受光装置

Also Published As

Publication number Publication date
FR2406896B1 (ja) 1982-02-19
EP0001728A1 (fr) 1979-05-02
CA1125423A (en) 1982-06-08
DE2862135D1 (en) 1983-01-27
EP0001728B1 (fr) 1982-12-22
US4218692A (en) 1980-08-19
JPS6244434B2 (ja) 1987-09-21
FR2406896A1 (fr) 1979-05-18

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