JPS6243138A - Ic mounting structure of liquid crystal display apparatus - Google Patents
Ic mounting structure of liquid crystal display apparatusInfo
- Publication number
- JPS6243138A JPS6243138A JP18351385A JP18351385A JPS6243138A JP S6243138 A JPS6243138 A JP S6243138A JP 18351385 A JP18351385 A JP 18351385A JP 18351385 A JP18351385 A JP 18351385A JP S6243138 A JPS6243138 A JP S6243138A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal display
- anisotropic conductive
- mounting structure
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分封〕
この発明は液晶表示装置の液晶表示板に液晶駆動用ＩＣ
を実装する横１宜に関する。[Detailed Description of the Invention] [Industrial Application Separation] This invention provides a liquid crystal driving IC for a liquid crystal display panel of a liquid crystal display device.
It is related to horizontal one-way implementation.
この発明は、大型高密式の液晶表示装置に於いて多数使
用される液晶駆動用ＩＣの実装構造罠於いて、液晶表示
板のカラスｌ＆根上へ異方性導電樹脂膜を介して直接駆
動用ＩＣを接続することにより、より高＠度な実装がで
きるようにするとともに、ＩＣの交換も可能とし、又Ｉ
Ｃを実装する為の基板も不要とするなど従来より低コス
トで実装できるようにしたものである。This invention is a mounting structure for liquid crystal driving ICs that are used in large numbers in large-scale high-density liquid crystal display devices. By connecting the
It also eliminates the need for a board to mount C, making it possible to mount it at a lower cost than before.
従来、第２図に示すようにフレーＦノプル基根１２上に
異方性導［樹脂膜１４を載置して、Ｍパット９を待つＩ
Ｃ’５’ｊｉフェースダウンで位１合わせしてカロ圧加
熱接合する考え方があった。この際、接合に余分な樹脂
は′Ｍ箔配線１１（厚き１８μ鶴位）の隙間に入り、樹
脂に含１れる金属粒子１４はＭハツト下方のものは銅箔
ハターンとの間で圧接導通がなされその他の部分では導
通に寄与しない。父、−也加圧加熱接合したＩＣの浮き
上りを防止する為ＩＣとＩＣ周辺部のフレキ／プル基板
とをおおうようにエポキシ等の硬１ヒ后の硬度の高い樹
脂で封止することが必要である。Conventionally, as shown in FIG.
There was a concept of aligning C'5'ji face down and performing Calorie pressure heat bonding. At this time, excess resin for bonding enters the gap between the M foil wiring 11 (about 18 μm thick), and the metal particles 14 contained in the resin are press-conducted with the copper foil pattern below the M wire. The other parts do not contribute to conduction. In order to prevent the IC that has been pressure-heated and bonded from lifting up, it is necessary to seal the IC and the flexible/pull board around the IC with a hard resin such as epoxy. is necessary.
しかし従来の異方性導送樹脂膜を用いたＩＣ接続法では
標単的なＭパット付きのＩＣを使用し、異方性導を楕脂
の逃げ場金鋼箔パターンの厚み段差（１８μｒＴ％）に
求めていたため液晶表示体を嘴５２するガラス基板上に
直接この方法でＩＣを接続することは雌しかった。なん
となればガラス基板上の配線はネサ偵（透明１！噌）又
はスパッタ等による金属膜であり厚さは１μｍ程度であ
る為、加圧時に樹脂が十分に逃げずＭパット部への１這
抵抗が不安定となる。父、第２図の如くフレキシブル基
板上にこの方法でＩＣを接続したとしても接合の信頼性
という点で非常に不満足なことが判明した。つまり、湛
湿匿サイクルテストとか熱衝堪テストという通常α品表
示装（を等の携帯機器が使用させる環境に近い偏度範囲
（−２０℃〜８ ＱＣ）の加速テストでも従来のワイヤ
ーボンド、 Ｔ Ａ Ｂ。However, in the conventional IC connection method using an anisotropic conductive resin film, an IC with a standard M pad is used. Therefore, it was desirable to connect the IC directly to the glass substrate on which the liquid crystal display is mounted in this manner. The reason for this is that the wiring on the glass substrate is made of a metal film made by Nessa (transparent 1!) or sputtering, and the thickness is about 1 μm, so the resin does not escape sufficiently when pressurized, and the first line to the M pad part does not flow. Resistance becomes unstable. It turned out that even if an IC was connected using this method on a flexible substrate as shown in FIG. 2, the reliability of the bonding was extremely unsatisfactory. In other words, even in accelerated tests such as immersion cycle tests and thermal shock resistance tests in the polarity range (-20°C to 8 QC) that is close to the environment in which mobile devices such as α-product display devices are used, conventional wire bond, T A B.
ＦＯＦといつ次接合法に比べて信頼度が一段低い。Reliability is lower than FOF and continuous bonding methods.
この理由はＩＣを加圧補強する為の封止樹脂とフレキノ
プル基板の樹力旨分がＩＣ（シリコンチップ〕と熱膨張
係数が！４なる為周囲温度の変化により引張り圧縮応力
を発生させＭパット部の異方性導電樹脂の接合力をゆる
壕せる為と推定される。次にこれからの液晶表示体への
駆初工Ｃの実装として要求される特性として、パネルが
大型ｒヒすることで比例的に増す駆動用ＩＣを取り換え
可能な実装１遺とすることがあげられる。この点で異方
性導電樹脂＠を介して接続する方法はもしＩＣが不良と
ｉつた鳴合封１Ｅ前り段ｌ！ｆならば有機溶剤で溶かし
て、４鳩にＴＣ’ｉ除去でき良い方法である。しかしな
がら、大型パネルでは駆動用ＩＣが項数１固表示体端に
並ぶので、谷々Ｊ） ＩＣに必景な電源及びは気的信号
はフェースダウン接合したＩＣの下をクロス配線・７）
々口くに通したいが、図２のμ口〈異方性導送樹脂膜漠
１４がＩＣ羊ツブ３によって十分１ｃ基板’ｔｌｌｌ配
線に圧層されているとその下を、市した電源等のクロス
配＠はたとえＩＣ側にＡＩパット１極がなくとも周辺の
基板配線やＩＣ面上の配線への漏れｖＬｊ北、漏れ１号
の、”ぬれが出て来る。この為図２の方法ではＩＣを取
り付けた外側の部分でｖＬ隙、信号線を別途多１−配線
するしかなく液晶表示体のコスト丁ツブになふという欠
点がある。The reason for this is that the sealing resin used to pressurize and reinforce the IC and the flexible board have a thermal expansion coefficient of !4 compared to the IC (silicon chip), which generates tensile and compressive stress due to changes in ambient temperature. It is presumed that this is to loosen the bonding force of the anisotropic conductive resin in the part.Next, as the characteristics required for the implementation of the initial construction C in future liquid crystal display bodies, as the panel becomes larger One way to do this is to replace the proportionally increasing number of drive ICs with a replaceable package.In this respect, the method of connecting via anisotropic conductive resin is a method that can be used in the event that the IC is defective. In the case of stage l!f, it is a good method to dissolve it with an organic solvent and remove TC'i in four parts.However, in large panels, the driving IC is lined up at the edge of the solid display, so it is difficult to remove the TC'i. The power supply and electrical signals that are essential to the process are cross-wired under the face-down bonded IC.7)
I would like to explain this to you in detail, but if the anisotropic conductive resin membrane 14 in Figure 2 is fully layered on the 1C board's wiring by the IC tube 3, then the power supply etc. Even if there is no AI pad 1 pole on the IC side, cross wiring will cause leakage to the surrounding board wiring and the wiring on the IC surface, and leakage No. 1 will occur.For this reason, the method in Figure 2 There is a drawback that the cost of the liquid crystal display is reduced because the VL gap and signal lines must be separately wired in the outer part where the IC is mounted.
そこでこの発明は従来○このような欠点を解決子るため
、ガラス面上の配）線の如き段差の少ない配線にも異方
性Ａｍ膜を介して接続でき、しかもＩＣＴをクロス配線
として１吏用でき、又温度変化に対しても十分なイ言頓
性を持つ液晶表示体へのＩＣ実装嘴債２得ること金目的
としている。Therefore, this invention solves the above-mentioned drawbacks of the conventional technology.In order to solve these problems, it is possible to connect wiring with few steps such as wiring on a glass surface through an anisotropic Am film, and to connect ICT to cross wiring. The object of the present invention is to obtain an IC mounting beak 2 for a liquid crystal display that can be used for various applications and has sufficient insensitivity to temperature changes.
上記間４点を嘆決するためにこの発明は、液晶駆Ｃ中Ｉ
Ｃに金属バンプを設け、微小な金属粒子を含む異方性導
電樹脂膜を介して咳ＩＣを液晶表示板のＩＣ用４子に接
続するようにするとともに封止用の５１￥盾として光填
削等で熱膨張係数を低く押えたエポキシ系イ刃脂を用い
、又該液晶駆動用ＩＣを復ｒり個ルベて谷々のＩＣ及び
異方性導′ｃｉ樹脂膜の下に１！源、信号ｇｔをクロス
配線状に通した。In order to resolve the above four points, the present invention provides
A metal bump is provided on C, and the cough IC is connected to the four IC chips on the liquid crystal display board via an anisotropic conductive resin film containing minute metal particles, and a light filler is used as a 51 yen shield for sealing. Using epoxy resin with a low coefficient of thermal expansion by grinding, etc., the liquid crystal driving IC was placed under the IC and the anisotropic conductive resin film. The source and signal gt were passed through in a cross wiring pattern.
上記のように１成された１仮晶表示体へ２） Ｉ Ｃ実
装構造は、異方性導電樹脂膜より厚い金属・・ンブ？Ｉ
Ｃ上に設けている為、フェースダウンボンディング時の
刀口圧加；＾が有効に接合部のみに作用して信頼性の、
シロい接合が得られるばかりでなく、ＩＣ面と異方性導
（樹脂膜との間は少し隙間ができる位の非常に弱い接触
状昨となる為、異方性導電力式の原理よりし７ても工Ｃ
及び異方性導を樹脂膜の下のクロス配線からの漏れ！！
！流、漏れ信号等の心配はない。又、温度変ずヒに対す
る接合部の信頼性も、基板側が硬質のガラスであり、封
止樹脂として充填剤で熱膨張係数を押えたエボ：Ｐノ樹
脂を用いている為向上させる事ができるのである。2) The IC mounting structure is made of metal that is thicker than the anisotropic conductive resin film. I
Since it is provided on C, the knife edge pressure applied during face-down bonding effectively acts only on the joint, increasing reliability.
Not only can a tight bond be obtained, but there is also a very weak contact between the IC surface and the anisotropic conductive (resin film) with a slight gap, which is better than the principle of the anisotropic conductive force method. 7 but also C
And the anisotropic conductor leaks from the cross wiring under the resin film! !
! There is no need to worry about leakage or leakage signals. In addition, the reliability of the joint against temperature fluctuations can be improved because the substrate side is made of hard glass and the sealing resin is EVO:P resin whose coefficient of thermal expansion is suppressed with a filler. It is.
以下にこの発明の実施例を図面にもとづいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第１図において、液晶表示体のガラス基板５にメタル配
線６及び６′が形成されている。メタル配豐は例λば下
地がクロム（１２μ蟻程度で上層が金（１５μ惰又はニ
ッケル１μ鴨といった構成である。液晶駆動用ＩＣ３に
は金バンプ４が設かられており鳩さば５０μＳ〜４０μ
ｍである。又、バンプとしてはニッケル又は銅でも良い
。但し異方性導電樹脂膜１の中に含まれる金属粒子２が
半田の場合には金・・ンプが接合導通性に優れる。異方
性４！樹脂膜２は厚ざが〕くンプより低い２０μ鴨であ
り、ＩＣ接合に先立ち液晶表示体のＶｔ極熾子上に４Ｈ
１ＬＩＣ’＋”？フェースダウンで位Ｉｆ＆わせして後
ツールで丁Ｃ裏面よりカロ圧（約数ｋｇ／チップ〕、加
Ｐ（１５０℃前后）して接合する。異方性導電樹脂膜２
は熱可塑性樹脂と＠）壺性樹脂がベースになっており、
ＴＣ裏面から伝λられた縞と加圧力がバンプの下に集中
する為バンプ下の樹脂は押し出され導電膜中の金践粒子
がカロ圧され導通がとれると同時に導ＷｌＩの接着性に
より加圧を収り除いた後も接合部の固定７１０圧状態は
保持される。In FIG. 1, metal wirings 6 and 6' are formed on a glass substrate 5 of a liquid crystal display. For example, the metal arrangement is such that the base layer is chromium (about 12 μm) and the upper layer is gold (15 μm or 1 μm of nickel).The LCD driving IC 3 is provided with gold bumps 4, and the thickness is about 50 μS to 40 μS.
It is m. Further, the bumps may be made of nickel or copper. However, when the metal particles 2 contained in the anisotropic conductive resin film 1 are solder, gold bumps have excellent bonding conductivity. Anisotropy 4! The resin film 2 has a thickness of 20 μm, which is lower than the thickness of the bump, and is coated with 4H on the Vt electrode of the liquid crystal display prior to IC bonding.
1 LIC'+"? Align it face down and then use a tool to apply Calorhe pressure (approximately several kg/chip) from the back side of the chip (approximately several kg/chip) and P (before and after 150°C) to join. Anisotropic conductive resin film 2
is based on thermoplastic resin and pot resin.
Since the stripes and pressure transmitted from the back side of the TC are concentrated under the bumps, the resin under the bumps is pushed out, and the metal particles in the conductive film are pressurized and conduction is established. At the same time, pressure is applied due to the adhesive properties of the conductive WlI. Even after the pressure has subsided, the fixed 710 pressure state of the joint is maintained.
特に金バンプに対して該樹脂膜中の金ｍ粒子が半田であ
り、ガラス基板上のメタル配線が全文ぽニッケルの如く
半田接合性が良好な場合にはＩＣのボンディングｇＬ度
は金属間結合の強度に近づく。In particular, when the gold particles in the resin film are solder to the gold bump, and the metal wiring on the glass substrate is made of nickel and has good solder bonding properties, the bonding degree of the IC is Approaching intensity.
父、前述した通り金にバンプ４は異方性導電樹脂膜１よ
りもｊソ、い為ＩＣの能動面とガラス基板５の間にある
異方性４！樹脂膜はほとんど加圧されず、従ってＩＣ面
下を通る電源、信号等のクロス配線６１同志あるいはク
ロス配り６′とＩＣ能動面とは互いに良好な絶縁性が保
たれる。次に本実装構遺をより信頼性あるものとするた
めにシリカ専の無機質充填剤を従来比１．５〜２．０倍
混合したエポキシ系樹脂７によりＩＣ千ツブ全体をおお
うように封止する。この封止は熱＃張係数が低く、硬化
後のばばが硬い樹力旨を使用することと封止のペース基
板がＷｅ張係砿の低いガラスであることが相俟って異方
性導！膜がＩＣを固層する力を保持し、偏度変化による
芯力発生にも十分対抗できる。次に第５図によって大型
液晶表示体に多数個の液晶駆動用ＩＣを実装する場合を
説明すると、液晶表示体のガラス基板２２上にメタル配
線２４ 、２５ 。Father, as mentioned above, the bumps 4 on the gold are more sensitive than the anisotropic conductive resin film 1, so there is anisotropy 4 between the active surface of the IC and the glass substrate 5! The resin film is hardly pressurized, so that good insulation is maintained between the cross wires 61 for power supply, signals, etc. passing under the IC surface, or between the cross wires 6' and the IC active surface. Next, in order to make this mounting structure more reliable, the entire IC tube was sealed with epoxy resin 7 containing 1.5 to 2.0 times more silica-specific inorganic filler than the conventional one. do. This sealing has a low thermal tensile coefficient, and the use of hard wood after curing and the fact that the sealing substrate is glass with a low We tension bonding property combine to provide anisotropic conductivity. ! The film maintains the force to solidify the IC, and can sufficiently resist core force generated by changes in eccentricity. Next, referring to FIG. 5, a case will be explained in which a large number of liquid crystal driving ICs are mounted on a large liquid crystal display.Metal wirings 24 and 25 are mounted on a glass substrate 22 of the liquid crystal display.
２６．２７等が形成さｎており、異方性導シ樹脂１４２
５ 、２５’を配設して後工０２１ 、２１’を各々フ
ェースダウンで接合する。するとψＪえば、各ＩＣへの
電韓供ｆ＠線２４、あるいは信号線２５゜２６はあたか
もクロス配線のような効果を発揮し、本発明を用いてＩ
Ｃの下を通すことができなければ樹脂絶縁層を付加した
多層配線としなけ几ばならないところを非′Ｋに安い基
板で町とするものである。又、ＩＣ下を利用している為
配線スペース的にも有利である。26, 27 etc. are formed, and the anisotropic conductive resin 142
5 and 25' are arranged, and the post-processed parts 021 and 21' are respectively joined face down. Then, if ψJ is used, the electric wire f@ wire 24 or the signal line 25゜26 to each IC exhibits an effect similar to cross wiring, and using the present invention, the I
If it is not possible to pass the wire under C, a multi-layer wiring with a resin insulating layer added would be required, but instead it is made up of an extremely cheap board. Also, since it uses the area under the IC, it is advantageous in terms of wiring space.
この発明は以上説明したように、金１バンプ付きのＩＣ
を８方性導電樹脂膜を介して直接液晶表示体に接合する
ようにしているので、
１）不良ＩＣ金谷易に交換することができ多数のＩＣを
実装する大型版晶衣示装喧の歩哨りを向上することが可
能。As explained above, this invention is an IC with one gold bump.
Since it is directly bonded to the liquid crystal display via an octagonal conductive resin film, 1) It is possible to replace a defective IC with a large-sized crystal display sentinel that mounts a large number of ICs. It is possible to improve the
２）各ＩＣへのｔ ＃ｉ、信号ラインをＩＣ下？通すク
ロス配線とすることができるので余分な配線基板や、多
１−配線が下髪でコストダウンがはかれる。2) t #i to each IC, signal line under IC? Since it is possible to use cross wiring to pass through, costs can be reduced by eliminating unnecessary wiring boards and multi-layer wiring.
肩 液晶表示装置梶の小型１ヒ、綜合実装費の低下、信
頼性の向上がはかれる。The size of the liquid crystal display device will be smaller, the overall mounting cost will be reduced, and the reliability will be improved.
号の顕４な効果がある。There are four significant effects of this issue.
第１図はこの発明にかかる液晶表示装【ｉのｆｃ実実装
逍の断面図、第２図は従来のＩＣ実装構造の断面図、第
３図はこの発明にかかる液晶表示製置のＩＣ実装構造の
実施例金示す平面図である。
１．１５．２３・・・異方性導電樹脂膜！樹脂膜５ 、
２１ ・・・・・・・・・・・・ ＩＣ４・・・・・・
・・・・・・・・・・・・・・・金４ハ７プ５．２２・
・・・・・・・・・・・ガラス基板７．８・・・・・・
・・・・・・・・・封止樹脂壜 上Fig. 1 is a sectional view of an actual FC mounting structure of a liquid crystal display device [i] according to the present invention, Fig. 2 is a sectional view of a conventional IC mounting structure, and Fig. 3 is an IC mounting of a liquid crystal display device according to the present invention. FIG. 3 is a plan view showing an example of the structure. 1.15.23...Anisotropic conductive resin film! resin film 5,
21 ・・・・・・・・・・・・ IC4・・・・・・
・・・・・・・・・・・・・・・Friday 4ha 7p 5.22・
......Glass substrate 7.8...
・・・・・・・・・Sealing resin bottle top
Claims (4)
表示装置に於いて、該ＩＣの接続用電極部に金属バンプ
を設け、該液晶表示板と該ＩＣとを該液晶表示板のＩＣ
接続端子部に配設した微小な金属粒子を含む異方性導電
樹脂膜を介して、該ＩＣをフェースダウンボンディング
することによりＩＣの固着と電気的接続を行なうことを
特徴とする液晶表示装置のＩＣ実装構造。(1) In a liquid crystal display device consisting of a liquid crystal display plate and an IC for driving the liquid crystal, metal bumps are provided on the connection electrodes of the IC, and the liquid crystal display plate and the IC are connected to each other on the liquid crystal display plate. IC
A liquid crystal display device characterized in that the IC is fixed and electrically connected by face-down bonding the IC through an anisotropic conductive resin film containing minute metal particles disposed in the connection terminal portion. IC mounting structure.
おり、該異方性導電樹脂膜に含まれる金属粒子が半田で
あることを特徴とする特許請求の範囲第１項記載の液晶
表示装置のＩＣ実装構造。(2) The liquid crystal display device according to claim 1, wherein the metal bumps of the IC are made of gold or nickel, and the metal particles contained in the anisotropic conductive resin film are solder. IC mounting structure.
でおおいＩＣの固着を補完することを特徴とする特許請
求の範囲第１項記載の液晶表示装置のＩＣ実装構造。(3) The IC mounting structure for a liquid crystal display device according to claim 1, wherein after face-down bonding the IC, the IC is covered with a resin to supplement the adhesion of the IC.
れ異方性導電膜を介してフェースダウンボンディングし
、各々のＩＣに必要な電源及び信号線等については各々
のＩＣ及び異方性導電膜の下を通過させて電源、信号の
供給及び連結を行なうことを特徴とする特許請求の範囲
第１項記載の液晶表示装置のＩＣ実装構造。(4) Multiple liquid crystal drive ICs are bonded face-down to the edge of the liquid crystal display board through anisotropic conductive films, and the power supply and signal lines necessary for each IC are bonded to each IC and anisotropic conductive film. The IC mounting structure of a liquid crystal display device according to claim 1, wherein the IC mounting structure of a liquid crystal display device according to claim 1, is passed under a conductive film to supply and connect power and signals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18351385A JPS6243138A (en) | 1985-08-21 | 1985-08-21 | Ic mounting structure of liquid crystal display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18351385A JPS6243138A (en) | 1985-08-21 | 1985-08-21 | Ic mounting structure of liquid crystal display apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6243138A true JPS6243138A (en) | 1987-02-25 |
Family
ID=16137154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18351385A Pending JPS6243138A (en) | 1985-08-21 | 1985-08-21 | Ic mounting structure of liquid crystal display apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6243138A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6411235A (en) * | 1987-07-03 | 1989-01-13 | Matsushita Electric Ind Co Ltd | Semiconductor element |
| EP0303256A2 (en) * | 1987-08-13 | 1989-02-15 | Shin-Etsu Polymer Co., Ltd. | A method for electrically connecting IC chips, a resinous bump-forming composition used therein and a liquid-crystal display unit electrically connected thereby |
| JPH0210316A (en) * | 1988-06-29 | 1990-01-16 | Sumitomo Bakelite Co Ltd | Liquid crystal display device |
| JPH0255336A (en) * | 1988-08-22 | 1990-02-23 | Matsushita Electric Ind Co Ltd | Production of liquid crystal display panel |
| JPH0383019A (en) * | 1989-08-28 | 1991-04-09 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| EP0803906A2 (en) * | 1996-04-26 | 1997-10-29 | Sharp Kabushiki Kaisha | Tape carrier package and liquid crystal display device |
| US5846853A (en) * | 1991-12-11 | 1998-12-08 | Mitsubishi Denki Kabushiki Kaisha | Process for bonding circuit substrates using conductive particles and back side exposure |
| EP1026744A1 (en) * | 1999-01-14 | 2000-08-09 | Sony Corporation | Video display and manufacturing method therefor |
| US6531323B1 (en) | 1999-01-28 | 2003-03-11 | Fuji Photo Film Co., Ltd. | Agglutination assay method and element in a dry system |
| JP2013065031A (en) * | 2012-11-13 | 2013-04-11 | Mitsubishi Electric Corp | Display device and ic |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5735051B2 (en) * | 1973-08-16 | 1982-07-27 | ||
| JPS60116157A (en) * | 1983-11-29 | 1985-06-22 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS61161729A (en) * | 1985-01-10 | 1986-07-22 | Sony Chem Kk | Integrated circuit device |
| JPS61279139A (en) * | 1985-06-04 | 1986-12-09 | Nec Corp | Hybrid integrated circuit device |
-
1985
- 1985-08-21 JP JP18351385A patent/JPS6243138A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5735051B2 (en) * | 1973-08-16 | 1982-07-27 | ||
| JPS60116157A (en) * | 1983-11-29 | 1985-06-22 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS61161729A (en) * | 1985-01-10 | 1986-07-22 | Sony Chem Kk | Integrated circuit device |
| JPS61279139A (en) * | 1985-06-04 | 1986-12-09 | Nec Corp | Hybrid integrated circuit device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6411235A (en) * | 1987-07-03 | 1989-01-13 | Matsushita Electric Ind Co Ltd | Semiconductor element |
| EP0303256A2 (en) * | 1987-08-13 | 1989-02-15 | Shin-Etsu Polymer Co., Ltd. | A method for electrically connecting IC chips, a resinous bump-forming composition used therein and a liquid-crystal display unit electrically connected thereby |
| JPH0210316A (en) * | 1988-06-29 | 1990-01-16 | Sumitomo Bakelite Co Ltd | Liquid crystal display device |
| JPH0255336A (en) * | 1988-08-22 | 1990-02-23 | Matsushita Electric Ind Co Ltd | Production of liquid crystal display panel |
| JPH0383019A (en) * | 1989-08-28 | 1991-04-09 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| US5846853A (en) * | 1991-12-11 | 1998-12-08 | Mitsubishi Denki Kabushiki Kaisha | Process for bonding circuit substrates using conductive particles and back side exposure |
| EP0803906A2 (en) * | 1996-04-26 | 1997-10-29 | Sharp Kabushiki Kaisha | Tape carrier package and liquid crystal display device |
| EP0803906A3 (en) * | 1996-04-26 | 1998-12-16 | Sharp Kabushiki Kaisha | Tape carrier package and liquid crystal display device |
| EP1026744A1 (en) * | 1999-01-14 | 2000-08-09 | Sony Corporation | Video display and manufacturing method therefor |
| US6531323B1 (en) | 1999-01-28 | 2003-03-11 | Fuji Photo Film Co., Ltd. | Agglutination assay method and element in a dry system |
| JP2013065031A (en) * | 2012-11-13 | 2013-04-11 | Mitsubishi Electric Corp | Display device and ic |
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