JPS6242394B2 - - Google Patents
Info
- Publication number
- JPS6242394B2 JPS6242394B2 JP57012525A JP1252582A JPS6242394B2 JP S6242394 B2 JPS6242394 B2 JP S6242394B2 JP 57012525 A JP57012525 A JP 57012525A JP 1252582 A JP1252582 A JP 1252582A JP S6242394 B2 JPS6242394 B2 JP S6242394B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- region
- type
- electrode
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23035781A | 1981-01-30 | 1981-01-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57147268A JPS57147268A (en) | 1982-09-11 |
| JPS6242394B2 true JPS6242394B2 (enrdf_load_stackoverflow) | 1987-09-08 |
Family
ID=22864908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57012525A Granted JPS57147268A (en) | 1981-01-30 | 1982-01-27 | Protecting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57147268A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3443770A1 (de) * | 1984-11-30 | 1986-06-05 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte, verpolungsgeschuetzte schaltung |
-
1982
- 1982-01-27 JP JP57012525A patent/JPS57147268A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57147268A (en) | 1982-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4567500A (en) | Semiconductor structure for protecting integrated circuit devices | |
| US4400711A (en) | Integrated circuit protection device | |
| US4484244A (en) | Protection circuit for integrated circuit devices | |
| US6919603B2 (en) | Efficient protection structure for reverse pin-to-pin electrostatic discharge | |
| US5077591A (en) | Electrostatic discharge protection for semiconductor input devices | |
| US4633283A (en) | Circuit and structure for protecting integrated circuits from destructive transient voltages | |
| US6538266B2 (en) | Protection device with a silicon-controlled rectifier | |
| US5166089A (en) | Method of making electrostatic discharge protection for semiconductor input devices | |
| JP3590706B2 (ja) | 半導体装置の保護素子 | |
| EP0103306B1 (en) | Semiconductor protective device | |
| JPS59155964A (ja) | 過電流保護装置 | |
| US4656491A (en) | Protection circuit utilizing distributed transistors and resistors | |
| JPH0927614A (ja) | 加入者線インタフェース回路用の完全保護部品 | |
| JP2810788B2 (ja) | 過渡電圧制限半導体部品 | |
| KR860000714B1 (ko) | 집적회로 보호장치 | |
| US5148250A (en) | Bipolar transistor as protective element for integrated circuits | |
| JP2505652B2 (ja) | 低トリガ電圧ｓｃｒ保護装置及び構造 | |
| JPS6242394B2 (enrdf_load_stackoverflow) | ||
| US6784499B2 (en) | Semiconductor device serving as a protecting element | |
| JP2901275B2 (ja) | 半導体集積回路装置 | |
| JPH0478162A (ja) | 集積回路用保護装置 | |
| JP2656045B2 (ja) | 静電放電保護回路 | |
| JPH06104456A (ja) | ブレークオーバダイオード | |
| JPS58186959A (ja) | 半導体装置 | |
| US5166764A (en) | Input protection device |